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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7414DN-T1-E3

Name: SI7414DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7414DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7414DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7414DN-T1-E3.pdf

Description:: MOSFET N-CH 60V 5.6A PPAK1212-8

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Product details

Overview

SI7414DN-T1-E3 from Vishay Siliconix is an N-channel 60-V TrenchFET® Power MOSFET in PowerPAK 1212-8 package, with R_DS(on) = 0.025 Ω at V_GS = 10 V and 8.7 A continuous drain current at T_A = 25 °C, optimized for PWM switching in primary-side switch and synchronous rectifier applications.

For engineers reviewing the SI7414DN-T1-E3 datasheet, SI7414DN-T1-E3 pinout, SI7414DN-T1-E3 application, or SI7414DN-T1-E3 equivalent, key selection criteria include its 60-V V_DS, low 25 mΩ on-resistance at 10 V gate drive, 3.8 W steady-state power dissipation, PowerPAK 1212-8 thermal performance (R_thJA = 65 °C/W), and suitability for space-constrained motor drives and DC-DC converters.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve high cell density and low R_DS(on) while maintaining robust avalanche capability (E_AS = 18 mJ). Its gate threshold voltage (V_GS(th) = 1–3 V) enables reliable turn-on with standard 4.5 V logic-level drive.

The device integrates a body diode with V_SD = 0.75–1.2 V at I_S = 3.2 A and exhibits fast switching dynamics: Q_g = 16–25 nC, t_d(on) = 15–25 ns, and t_r = 12–20 ns under specified test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for primary-side switch operation in ≤60-V systems
R_DS(on) @ 10 V	0.025 Ω - Enables <1.9 W conduction loss at 8.7 A, critical for high-efficiency DC-DC stages
I_D (continuous)	8.7 A @ T_A = 25 °C - Sustains full-load current in compact motor drive H-bridges without forced cooling
Q_g	16–25 nC - Determines gate driver power requirement and switching loss trade-off in PWM circuits
R_thJA (steady state)	65 °C/W - Junction-to-ambient thermal resistance on standard FR4; enables ~50 °C rise at 2 W dissipation
E_AS	18 mJ - Single-pulse avalanche energy rating supports robustness during inductive load switching
V_GS(th)	1–3 V - Ensures clean turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting

Pinout & Package

SI7414DN-T1-E3 is housed in a leadless PowerPAK 1212-8 package (3.30 mm × 3.30 mm footprint) with exposed drain pad on bottom side for enhanced thermal conduction. The package has no leads; soldering relies on top-side terminals and bottom-side copper land pattern per Vishay AN822.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel drain terminals connected to internal die and exposed bottom pad - primary current path and main thermal path to PCB
5	Gate (G)	Control input; requires low-impedance gate driver due to 1.0 Ω internal gate resistance and 16–25 nC total charge
6, 7, 8	Source (S)	Three parallel source terminals forming return path; connects to power ground plane and defines reference for V_GS

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 25 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint - 40 % smaller than TSSOP-8 with superior thermal resistance
PWM-optimized switching	Low Q_gd/Q_gs ratio (4.4/2.7) minimizes Miller-induced shoot-through risk in half-bridge configurations
PowerPAK 1212-8 thermal design	2.4 °C/W junction-to-case resistance enables direct heat transfer to PCB copper, reducing ΔT_J by >40 °C vs. SO-8
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and environmental requirements for industrial and automotive end equipment

Applications

Primary Side Switch	Synchronous Rectifier
Use Scenario: High-frequency flyback or forward converter primary switch operating at 100–500 kHz with 30–60 V input. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to transformer primary winding. Use Value: 60 V V_DS and 25 mΩ R_DS(on) enable >92 % efficiency at 8 A load; low Q_g reduces gate drive losses.	Use Scenario: Secondary-side rectification in isolated DC-DC converters replacing Schottky diodes to reduce conduction loss. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by external timing circuit or controller IC. Use Value: 0.036 Ω R_DS(on) at 4.5 V gate drive cuts forward drop vs. 0.5 V Schottky, improving light-load efficiency by up to 5 %.
Motor Drive Half-Bridge	BLDC Inverter Stage
Use Scenario: 24–48 V brushed DC motor H-bridge with PWM speed control and current sensing. IC Role / Device Role / Timing Role: High-side or low-side switching element in dual-MOSFET bridge configuration. Use Value: 8.7 A continuous current and 19 A single-pulse avalanche rating support stall-current transients without failure.	Use Scenario: Three-phase BLDC inverter stage driving small fans, pumps, or drones with trapezoidal commutation. IC Role / Device Role / Timing Role: One of six power switches in inverter leg, switching at ≤20 kHz with dead-time control. Use Value: Fast 12–20 ns rise/fall times and low 1.0 Ω gate resistance ensure precise edge control and minimal switching overlap loss.

Primary Side Switch

Synchronous Rectifier

Use Scenario: High-frequency flyback or forward converter primary switch operating at 100–500 kHz with 30–60 V input.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to transformer primary winding.

Use Value: 60 V V_DS and 25 mΩ R_DS(on) enable >92 % efficiency at 8 A load; low Q_g reduces gate drive losses.

Use Scenario: Secondary-side rectification in isolated DC-DC converters replacing Schottky diodes to reduce conduction loss.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by external timing circuit or controller IC.

Use Value: 0.036 Ω R_DS(on) at 4.5 V gate drive cuts forward drop vs. 0.5 V Schottky, improving light-load efficiency by up to 5 %.

Motor Drive Half-Bridge

BLDC Inverter Stage

Use Scenario: 24–48 V brushed DC motor H-bridge with PWM speed control and current sensing.

IC Role / Device Role / Timing Role: High-side or low-side switching element in dual-MOSFET bridge configuration.

Use Value: 8.7 A continuous current and 19 A single-pulse avalanche rating support stall-current transients without failure.

Use Scenario: Three-phase BLDC inverter stage driving small fans, pumps, or drones with trapezoidal commutation.

IC Role / Device Role / Timing Role: One of six power switches in inverter leg, switching at ≤20 kHz with dead-time control.

Use Value: Fast 12–20 ns rise/fall times and low 1.0 Ω gate resistance ensure precise edge control and minimal switching overlap loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7414TRPBF	SO-8 package, higher R_DS(on) = 0.032 Ω @ 10 V, R_thJA = 62 °C/W, larger 5 mm × 6 mm footprint	Less suitable for ultra-compact layouts; requires more PCB area and delivers lower power density	Choose when legacy SO-8 layout compatibility is required and thermal margin allows higher R_DS(on)
DMN601DWKQ-7	PowerDI 3333 package, R_DS(on) = 0.028 Ω @ 10 V, 7.5 A I_D, R_thJA = 70 °C/W, halogen-free	Slightly lower current rating and higher thermal resistance limit use in sustained 8 A applications	Prefer for cost-sensitive designs where 0.7 A derating and 5 °C/W higher thermal impedance are acceptable

Compared with IRF7414TRPBF and DMN601DWKQ-7, SI7414DN-T1-E3 delivers the lowest R_DS(on) in the smallest footprint with best-in-class junction-to-ambient thermal resistance - making it optimal for high-density, thermally constrained 60-V switching applications.

Availability

SI7414DN-T1-E3 is available at Aetrix Electronics and suitable for primary-side switch, synchronous rectifier, and motor drive applications requiring stable component supply, Pb-free compliance, and consistent PowerPAK 1212-8 packaging across production lots.

Supply support for SI7414DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7414DN product line belongs to Vishay's TrenchFET® Power MOSFET family, engineered specifically for high-frequency, high-efficiency switching in space-limited power conversion and motor control systems.

FAQ

What is the maximum continuous drain current for SI7414DN-T1-E3 at 70 °C ambient temperature?

The SI7414DN-T1-E3 supports 7.0 A continuous drain current at T_A = 70 °C under standard mounting conditions on 1" × 1" FR4 board. This rating reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures and must be validated against actual PCB layout and copper area.

Does SI7414DN-T1-E3 require a heatsink in typical operation?

No external heatsink is required for SI7414DN-T1-E3 in typical operation. Its PowerPAK 1212-8 package achieves R_thJA = 65 °C/W on standard FR4; at 2 W dissipation, junction temperature rises only ~50 °C above ambient - well within the 150 °C T_J limit. Thermal performance improves significantly with added PCB copper.

Can SI7414DN-T1-E3 be driven directly by a 3.3 V microcontroller GPIO?

Yes, SI7414DN-T1-E3 has a gate threshold voltage range of 1–3 V and delivers R_DS(on) = 0.036 Ω at V_GS = 4.5 V, enabling functional switching with 3.3 V logic. However, full 8.7 A current capability and lowest on-resistance (0.025 Ω) require 10 V gate drive; a level-shifter or dedicated gate driver is recommended for high-current or high-efficiency operation.

What is the avalanche rating of SI7414DN-T1-E3 and how is it tested?

The SI7414DN-T1-E3 is rated for 19 A single-pulse avalanche current (I_AS) and 18 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. These values are measured per JEDEC JESD24-11 using unclamped inductive switching (UIS) test conditions and guarantee ruggedness during inductive load turn-off transients without device failure.

Is SI7414DN-T1-E3 compatible with lead-free reflow soldering processes?

Yes, SI7414DN-T1-E3 is qualified for lead-free reflow soldering with peak temperature up to 240 °C for 20–40 seconds, per Vishay specification document 73257. The PowerPAK 1212-8 package is designed for standard Pb-free profiles and does not require special pre-conditioning prior to assembly.

SI7414DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 8.7A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7414DN-T1-E3 FAQ

1.How can I place an order for SI7414DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7414DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7414DN-T1-E3 reliable?

The price and inventory of SI7414DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7414DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7414DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7414DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7414DN-T1-E3?

SI7414DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7414DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7414DN-T1-E3?

For technical support, including SI7414DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7414DN-T1-E3 requirements.

6.How does Aetrix verify that SI7414DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7414DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7414DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7414DN-T1-E3?

All SI7414DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7414DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7414DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7414DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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