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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7421DN-T1-E3

Name: SI7421DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7421DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7421DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7421DN-T1-E3.pdf

Description:: MOSFET P-CH 30V 6.4A PPAK1212-8

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Product details

Overview

SI7421DN-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in battery-powered systems, featuring -30 V V_DS, 0.025 Ω R_DS(on) at V_GS = -10 V, and -9.8 A continuous drain current at T_A = 25 °C. It operates as a low-side or high-side power switch in portable electronics battery protection circuits.

For engineers reviewing the SI7421DN-T1-E3 datasheet, SI7421DN-T1-E3 pinout, SI7421DN-T1-E3 application, or SI7421DN-T1-E3 equivalent, key selection criteria include its PowerPAK® 1212-8 package thermal performance (R_thJC = 2.9 °C/W), -3 V gate threshold voltage, and 26.2 nC total gate charge for optimized switching loss in compact DC-DC and battery management designs.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance with fast switching characteristics. Its gate threshold voltage of -1 V to -3 V enables reliable turn-on with standard logic-level gate drivers, while the integrated body diode supports reverse-current paths in bidirectional power control.

The device is rated for -30 V drain-source voltage and ±20 V gate-source voltage, with pulsed drain current capability up to -30 A. Thermal design leverages the exposed drain pad in the PowerPAK 1212-8 package to minimize junction-to-case resistance and maintain stable R_DS(on) across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for battery-switch applications up to 24 V nominal systems
R_DS(on)	0.025 Ω at V_GS = -10 V - Enables <100 mW conduction loss at 2 A load current
I_D (continuous)	-9.8 A at T_A = 25 °C - Supports high-current load switching without external heatsinking
V_GS(th)	-1 to -3 V - Ensures full enhancement with 3.3 V or 5 V logic-level gate drive
Q_g	26.2 nC typical - Reduces gate-drive power requirement and switching transition time
R_thJC	2.9 °C/W typical - Delivers efficient heat transfer from die to PCB copper via exposed drain pad
V_SD	-0.8 to -1.2 V - Low forward voltage drop of integrated body diode minimizes reverse-conduction loss

Pinout & Package

SI7421DN-T1-E3 is housed in the leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm footprint, 1.07 mm height), with an exposed drain pad on the bottom side for thermal and electrical connection to PCB ground or power planes.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	Seven parallel drain terminals tied to internal die and exposed bottom pad - provides low-inductance, high-current path and primary thermal conduction route
4	Gate (G)	Single gate input controlling channel conduction - requires <26.2 nC charge for full turn-on; compatible with 3.3 V/5 V microcontroller outputs
S (exposed pad)	Source (S)	Exposed top-side source terminal - connects directly to PCB source net; forms return path for load current and gate drive reference

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.025 Ω R_DS(on) in 3.3 mm × 3.3 mm footprint - maximizes power density for space-constrained battery packs
PowerPAK® 1212-8 package	2.9 °C/W R_thJC and 1.07 mm profile - enables cooler operation than SO-8 or TSSOP-8 while fitting ultra-thin portable designs
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and environmental compliance requirements for global consumer electronics
Low gate charge	26.2 nC Q_g - reduces driver IC loading and switching energy loss in high-frequency battery disconnect circuits
Enhancement-mode P-channel	V_GS(th) = -1 to -3 V - simplifies gate drive design by eliminating need for negative bias or level-shifting circuitry

Applications

Battery Protection Circuit	USB-C Power Delivery Switch
Use Scenario: Reverse-current blocking and overcurrent cutoff in lithium-ion battery packs for smartphones and tablets. IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch controlled by battery management IC to isolate cell stack during fault conditions. Use Value: 0.025 Ω R_DS(on) limits voltage drop to <25 mV at 1 A, preserving battery runtime and enabling accurate current sensing.	Use Scenario: Directional power path control in dual-role USB-C ports supporting sink/source mode negotiation. IC Role / Device Role / Timing Role: Load switch managing V_BUS connection between port controller and power path, activated within 100 µs of PD contract confirmation. Use Value: 26.2 nC Q_g and -3 V V_GS(th) allow direct driving from 3.3 V PD controller GPIO, eliminating discrete level shifters.
Smartphone Power Sequencing	Wireless Earbud Charging Case
Use Scenario: Controlled power-up sequencing of RF, audio, and sensor subsystems during cold boot. IC Role / Device Role / Timing Role: Low-side P-channel switch enabling precise timing-controlled enablement of voltage rails under PMIC supervision. Use Value: -9.8 A I_D rating supports peak inrush currents of multi-rail SoC power domains without derating.	Use Scenario: Isolation of charging circuitry from earbud battery during wireless charging to prevent leakage and thermal buildup. IC Role / Device Role / Timing Role: Battery disconnect switch activated by charging IC upon full charge detection to halt trickle current flow. Use Value: 1.07 mm profile fits sub-10 mm thick charging case PCB stacks; R_thJC = 2.9 °C/W prevents thermal throttling during repeated charge cycles.

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in lithium-ion battery packs for smartphones and tablets.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch controlled by battery management IC to isolate cell stack during fault conditions.

Use Value: 0.025 Ω R_DS(on) limits voltage drop to <25 mV at 1 A, preserving battery runtime and enabling accurate current sensing.

Use Scenario: Directional power path control in dual-role USB-C ports supporting sink/source mode negotiation.

IC Role / Device Role / Timing Role: Load switch managing V_BUS connection between port controller and power path, activated within 100 µs of PD contract confirmation.

Use Value: 26.2 nC Q_g and -3 V V_GS(th) allow direct driving from 3.3 V PD controller GPIO, eliminating discrete level shifters.

Smartphone Power Sequencing

Wireless Earbud Charging Case

Use Scenario: Controlled power-up sequencing of RF, audio, and sensor subsystems during cold boot.

IC Role / Device Role / Timing Role: Low-side P-channel switch enabling precise timing-controlled enablement of voltage rails under PMIC supervision.

Use Value: -9.8 A I_D rating supports peak inrush currents of multi-rail SoC power domains without derating.

Use Scenario: Isolation of charging circuitry from earbud battery during wireless charging to prevent leakage and thermal buildup.

IC Role / Device Role / Timing Role: Battery disconnect switch activated by charging IC upon full charge detection to halt trickle current flow.

Use Value: 1.07 mm profile fits sub-10 mm thick charging case PCB stacks; R_thJC = 2.9 °C/W prevents thermal throttling during repeated charge cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7420DP-T1-E3	N-channel counterpart with same PowerPAK 1212-8 package, -30 V rating, and 0.022 Ω R_DS(on); requires high-side gate driver or bootstrap circuitry	Used where N-channel topology is preferred for lower R_DS(on) or compatibility with existing N-channel driver ICs	Select when system already employs high-side N-channel drivers or when slightly lower on-resistance justifies added gate drive complexity
DMN3020LSD-13	P-channel, -30 V, 0.028 Ω R_DS(on) at -10 V, SO-8 package; higher R_thJA (65 °C/W vs. 28 °C/W for SI7421DN-T1-E3) and larger footprint (4.9 × 6.0 mm)	Suitable for legacy board designs with SO-8 footprints or where thermal constraints are less stringent	Choose only when redesigning for PowerPAK 1212-8 is not feasible; expect ~25 % higher junction temperature rise under identical power dissipation

Compared with Si7420DP-T1-E3, SI7421DN-T1-E3 eliminates gate driver complexity in low-side configurations; compared with DMN3020LSD-13, it delivers 4× better thermal performance and 45 % smaller area, enabling higher power density in modern portable electronics.

Availability

SI7421DN-T1-E3 is available at Aetrix Electronics and suitable for battery protection, USB-C power delivery, smartphone power sequencing, and wireless earbud charging case applications requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for SI7421DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The Si7421DN product line belongs to Vishay's TrenchFET® PowerPAK® portfolio, engineered specifically for space- and thermally constrained battery-powered devices demanding low R_DS(on), fast switching, and halogen-free compliance.

FAQ

What is the maximum continuous drain current rating for SI7421DN-T1-E3 at 85 °C ambient temperature?

The SI7421DN-T1-E3 supports -7 A continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8 package on standard FR4 PCBs; actual achievable current depends on copper area and airflow. The SI7421DN-T1-E3 maintains stable R_DS(on) across this range due to its low R_thJC of 2.9 °C/W.

Does SI7421DN-T1-E3 require a gate resistor for ESD protection or switching control?

No external gate resistor is required for ESD protection - the SI7421DN-T1-E3 integrates sufficient gate oxide robustness per JEDEC JS-001 Class 2 (±2 kV HBM). A small series resistor (≤10 Ω) may be used to damp ringing during fast switching, but the SI7421DN-T1-E3's 6.5 Ω intrinsic gate resistance and 26.2 nC Q_g make it inherently stable with typical 3.3 V GPIO drivers. Always verify layout parasitics in final design.

Can SI7421DN-T1-E3 be used in high-side switching configurations with 5 V gate drive?

Yes - the SI7421DN-T1-E3's V_GS(th) range of -1 V to -3 V ensures full enhancement with 5 V gate drive (V_GS = -5 V), delivering its specified 0.025 Ω R_DS(on). In high-side configuration, the source is tied to the positive rail; ensure gate driver can swing below source potential. The SI7421DN-T1-E3 does not integrate a charge pump, so external level-shifting or floating supply is needed for true high-side operation above 5 V.

What is the safe operating area (SOA) limitation for SI7421DN-T1-E3 at DC operation?

At DC, the SI7421DN-T1-E3 SOA is limited by its 3.6 W maximum power dissipation at T_A = 25 °C, corresponding to ~6 A at V_DS = 0.6 V or ~2 A at V_DS = 1.8 V. The device's R_thJA of 28 °C/W (10 s) and 65 °C/W (steady state) defines thermal boundaries. The SI7421DN-T1-E3 SOA curve shows no secondary breakdown - failure mode is thermal runaway, making PCB copper area critical for sustained loads.

Is SI7421DN-T1-E3 compatible with lead-free reflow profiles per IPC-J-STD-020?

Yes - SI7421DN-T1-E3 is qualified for lead-free reflow with a peak temperature of 240 °C (±0/−5 °C) for 20–40 seconds, matching IPC-J-STD-020 Moisture Sensitivity Level 1 requirements. The PowerPAK 1212-8 package passes preconditioning per JESD22-A113, and Vishay specifies the exact profile in document 73257. No pre-bake is required for SI7421DN-T1-E3 when stored per MSL-1 handling guidelines.

SI7421DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7421DN-T1-E3 FAQ

1.How can I place an order for SI7421DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7421DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7421DN-T1-E3 reliable?

The price and inventory of SI7421DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7421DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7421DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7421DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7421DN-T1-E3?

SI7421DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7421DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7421DN-T1-E3?

For technical support, including SI7421DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7421DN-T1-E3 requirements.

6.How does Aetrix verify that SI7421DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7421DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7421DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7421DN-T1-E3?

All SI7421DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7421DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7421DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7421DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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