My Inquiry
My Account
Vishay Siliconix SI7423DN-T1-GE3
- Part No.:
- SI7423DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7423DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 7.4A PPAK 1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,953
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI7423DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency battery-switching applications. It features -30 V drain-source voltage, 0.018 Ω RDS(on) at VGS = -10 V, and -11.7 A continuous drain current at TA = 25 °C in the PowerPAK® 1212-8 package. Its halogen-free, lead-free construction supports RoHS-compliant portable power management systems.
For engineers reviewing the SI7423DN-T1-GE3 datasheet, SI7423DN-T1-GE3 pinout, SI7423DN-T1-GE3 application, or SI7423DN-T1-GE3 equivalent, key selection criteria include its low RDS(on) at -4.5 V gate drive, ultra-low thermal resistance (RthJC = 2.4 °C/W), and compact 3.3 mm × 3.3 mm footprint optimized for space-constrained battery protection circuits.
Technical Context
This device uses TrenchFET® technology to achieve enhanced conduction efficiency and fast switching performance. Its gate threshold voltage range of -1 V to -3 V ensures reliable turn-on with standard logic-level negative gate drive, while the integrated body diode supports reverse-current paths in bidirectional battery control topologies.
The PowerPAK 1212-8 package places the drain pad on the bottom surface for direct thermal coupling to PCB copper, enabling junction-to-ambient thermal resistance as low as 65 °C/W under standard conditions. This architecture eliminates reliance on leadframe thermal paths, delivering superior heat dissipation versus TSOP-6 or TSSOP-8 alternatives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Supports full discharge down to 0 V in single-cell Li-ion or multi-cell alkaline battery systems |
| RDS(on) @ VGS = -10 V | 0.018 Ω - Enables <190 mW conduction loss at -11.7 A, critical for low-voltage battery switch efficiency |
| RDS(on) @ VGS = -4.5 V | 0.030 Ω - Ensures robust operation with common microcontroller GPIO or dedicated battery-protection IC gate drive |
| ID (continuous) | -11.7 A @ TA = 25 °C - Sustains high peak load currents in USB-C PD sink or power bank output stages |
| RthJC | 2.4 °C/W - Allows direct thermal transfer from die to PCB, reducing junction temperature rise by >40 °C vs. TSSOP-8 |
| Qg | 56 nC - Balances switching speed and gate-drive power requirements in 100–500 kHz battery-switching frequencies |
| VGS(th) | -1 to -3 V - Guarantees turn-on with industry-standard -4.5 V or -5 V logic rails without level-shifting circuitry |
Pinout & Package
SI7423DN-T1-GE3 is housed in the PowerPAK® 1212-8 surface-mount package: 3.30 mm × 3.30 mm footprint, 1.07 mm profile, with exposed drain pad on bottom side for thermal and electrical connection. The package contains eight terminals arranged in dual-row configuration with four drain connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Common source node for P-channel operation; connects to battery positive in high-side switch configuration |
| 5 (G) | Gate | Control input requiring negative voltage relative to source to turn on; isolated from power path |
| 6, 7, 8, D (D) | Drain | Four parallel drain terminals tied to internal die; bottom-exposed pad provides primary thermal and current path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers 30 % lower RDS(on) than planar P-channel MOSFETs of comparable size, directly improving battery runtime |
| PowerPAK® 1212-8 package | Reduces board area by >40 % vs. TSSOP-8 while maintaining SO-8–class thermal performance via bottom-side thermal pad |
| Halogen-free & Pb-free construction | Meets IEC 61249-2-21 and JEDEC J-STD-020 standards for environmentally compliant consumer electronics |
| Low 1.07 mm profile | Enables integration into ultra-thin portable devices such as wireless earbuds and slim power banks |
| Specified RDS(on) at -4.5 V | Ensures guaranteed on-resistance with standard microcontroller outputs, eliminating need for external gate drivers |
Applications
| Battery Protection Circuit | USB-C Power Delivery Sink |
|---|---|
Use Scenario: Reverse-current blocking and over-discharge protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery-to-system power path; activated only during safe voltage window. Use Value: 0.030 Ω RDS(on) at -4.5 V enables <300 mW loss at 3 A, preserving battery capacity and minimizing thermal stress on compact PCBs. | Use Scenario: Input power switching for USB-C PD-enabled accessories accepting up to 20 V. IC Role / Device Role / Timing Role: Primary battery isolation switch placed between USB-C receptacle and system power rail. Use Value: -30 V VDS rating accommodates full USB-C PD voltage range; low Qg supports fast enable/disable transitions during port negotiation. |
| Smartphone Power Path Management | Wireless Charging Receiver |
Use Scenario: Seamless handoff between wall adapter and battery during charging in mobile phones. IC Role / Device Role / Timing Role: Load switch managing power routing between charger IC output and system PMIC input. Use Value: 2.4 °C/W RthJC keeps junction temperature within 5 °C of PCB temperature, preventing thermal throttling during sustained 2 A loads. | Use Scenario: Output stage of Qi-compliant wireless charging receivers regulating power to battery or system rail. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and battery disconnect switch. Use Value: Compact 3.3 mm × 3.3 mm footprint fits tight coil-perimeter layouts; low-profile design avoids interference with ferrite shielding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7421DP-T1-GE3 | Same PowerPAK 1212-8 package but N-channel; requires high-side gate driver or charge pump | Used where active-low control or higher efficiency at high current is prioritized over simplicity | Select only if system already includes gate-driving infrastructure; not drop-in compatible due to polarity reversal |
| DMN3023LSD-13 | 30 V P-channel in SO-8; RDS(on) = 0.028 Ω @ -4.5 V; RthJA = 81 °C/W (vs. 65 °C/W for SI7423DN-T1-GE3) | Acceptable in less thermally constrained designs with available board area | Choose when legacy SO-8 layout reuse is required; expect ~25 °C higher junction rise at same power dissipation |
Compared with Si7421DP-T1-GE3, SI7423DN-T1-GE3 eliminates gate-driver complexity in battery-switch roles; compared with DMN3023LSD-13, it delivers 25 % lower thermal resistance and 30 % smaller footprint-critical for next-generation wearables and ultra-portables.
Availability
SI7423DN-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery sinks, smartphone power path management, and wireless charging receivers requiring stable component supply across high-mix production runs.
Supply support for SI7423DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The Si7423DN product line targets space- and thermally constrained portable electronics, delivering optimized P-channel switching performance in the smallest possible footprint without sacrificing ruggedness or reliability.
FAQ
What is the maximum continuous drain current for SI7423DN-T1-GE3 at 85 °C ambient temperature?
The SI7423DN-T1-GE3 supports -8.4 A continuous drain current at TA = 85 °C with derating applied per its thermal resistance characteristics. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 72582 and reflects operation on a standard 1" × 1" FR4 board without forced airflow. At higher board temperatures, further derating is required to maintain TJ ≤ 150 °C.
Does SI7423DN-T1-GE3 require a gate driver when controlled by a 3.3 V microcontroller?
No, SI7423DN-T1-GE3 does not require an external gate driver with a 3.3 V microcontroller, because its gate threshold voltage range (-1 V to -3 V) and specified RDS(on) of 0.030 Ω at VGS = -4.5 V ensure full enhancement using standard logic-level negative gate drive. The SI7423DN-T1-GE3 can be directly driven by most 3.3 V or 5 V GPIO pins configured as open-drain or with appropriate level-shifting.
What is the thermal resistance from junction to case (RthJC) for SI7423DN-T1-GE3, and how is it measured?
The SI7423DN-T1-GE3 has a maximum junction-to-case thermal resistance (RthJC) of 2.4 °C/W under steady-state conditions, as specified in Vishay document 72582. This value is measured with the device mounted on an infinite heat sink, representing the intrinsic thermal path from die to the bottom-side drain pad-enabling accurate thermal modeling when the pad is soldered to a large copper area on the PCB.
Can SI7423DN-T1-GE3 be used in place of an N-channel MOSFET in a high-side switch configuration?
Yes, SI7423DN-T1-GE3 is specifically designed as a P-channel MOSFET for high-side switching, eliminating the need for bootstrap circuitry or high-side gate drivers required by N-channel devices. In a high-side configuration, the SI7423DN-T1-GE3 source connects to the input voltage rail and the drain to the load, enabling simple logic-level control with negative gate bias relative to source.
Is SI7423DN-T1-GE3 suitable for automotive applications?
SI7423DN-T1-GE3 is not AEC-Q101 qualified and is intended for commercial and industrial portable electronics-not automotive applications. While its -55 °C to +150 °C operating temperature range meets some automotive ambient requirements, Vishay does not specify automotive-grade reliability testing, transient immunity, or PPAP documentation for the SI7423DN-T1-GE3. For automotive use, consult Vishay's AEC-Q101–qualified P-channel portfolio.
SI7423DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 11.7A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7423DN-T1-GE3 FAQ
1.How can I place an order for SI7423DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7423DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7423DN-T1-GE3 reliable?
The price and inventory of SI7423DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7423DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7423DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7423DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7423DN-T1-GE3?
SI7423DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7423DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7423DN-T1-GE3?
For technical support, including SI7423DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7423DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7423DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7423DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7423DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7423DN-T1-GE3?
All SI7423DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7423DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7423DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7423DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI7423DN-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
