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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7434ADP-T1-RE3

Name: SI7434ADP-T1-RE3
Brand: Vishay Siliconix
SKU: SI7434ADP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7434ADP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7434ADP-T1-RE3.pdf

Description:: MOSFET N-CH 250V 3.7A/12.3A PPAK

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Product details

Overview

SI7434ADP-T1-RE3 from Vishay Siliconix is an N-channel 250 V (D-S) TrenchFET® power MOSFET in a PowerPAK® SO-8 package, delivering R_DS(on) = 0.150 Ω at V_GS = 10 V, 12.3 A continuous drain current at T_C = 25 °C, and 8.6 nC total gate charge - optimized for primary-side switching in offline DC/DC converters.

For engineers reviewing the SI7434ADP-T1-RE3 datasheet, SI7434ADP-T1-RE3 pinout, SI7434ADP-T1-RE3 application, or SI7434ADP-T1-RE3 equivalent, key selection criteria include its 250 V V_DS rating, low thermal resistance (R_thJC = 1.8 °C/W), 100 % R_g and UIS tested reliability, and suitability for high-voltage industrial and lighting power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high voltage blocking with low on-resistance and fast switching dynamics. Its 250 V V_DS rating supports universal-input offline applications, while the 8.6 nC Q_g (at V_GS = 7.5 V) enables efficient operation in hard-switched topologies up to several hundred kHz.

The device integrates a robust body diode with t_rr = 100–150 ns and Q_rr = 356–550 nC, supporting synchronous rectification and freewheeling roles. Thermal design is facilitated by the PowerPAK SO-8's exposed-drain copper pad and low R_thJC of 1.8 °C/W, enabling high-power density without external heatsinking under moderate duty cycles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Supports universal AC input (85–265 VAC) flyback and forward converter primary switches
R_DS(on) max @ V_GS = 10 V	0.150 Ω - Enables ≤1.4 W conduction loss at 3.7 A, critical for thermally constrained PCB layouts
I_D continuous @ T_C = 25 °C	12.3 A - Sustains high peak currents in pulsed-power industrial control circuits
Q_g typ. @ V_GS = 7.5 V	8.6 nC - Reduces gate drive power and allows use with low-current controllers like UC384x derivatives
R_thJC max	2.3 °C/W - Permits direct mounting to copper pour or small heatsink for >30 W output designs
V_GS(th)	2–4 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers
E_AS	7.2 mJ - Withstands single-pulse avalanche stress during transformer leakage energy recovery

Pinout & Package

SI7434ADP-T1-RE3 uses the leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.04 mm), featuring an exposed drain copper pad on the bottom side for enhanced thermal conduction and mechanical stability. The package is Pb-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal die; electrically tied to exposed drain pad via substrate - requires dedicated ground plane routing
5	Gate (G)	Control terminal; low 2.3 Ω typical gate resistance minimizes ringing and EMI in high-dV/dt environments
6, 7, 8	Drain (D)	High-voltage power terminal; connected to large-area exposed copper pad for thermal and current handling

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 25% lower R_DS(on) vs. planar MOSFETs at same voltage class, improving efficiency in 250 V primary-side switches
100 % R_g and UIS tested	Guarantees gate robustness against transient overvoltage and unclamped inductive switching stress in real-world power supplies
Low R_thJC = 1.8 °C/W	Enables >50% higher power density than SO-8 packaged alternatives, reducing need for external heatsinks in enclosed fixtures
Body diode t_rr = 100–150 ns	Minimizes reverse recovery losses in synchronous rectifier configurations, especially in 100–300 kHz LLC resonant converters
PowerPAK® SO-8 footprint	Provides SO-8-compatible layout while delivering 2× the current capability and 40% lower thermal resistance of standard SO-8

Applications

Industrial Motor Drives	LED Street Lighting Drivers
Use Scenario: High-voltage half-bridge primary switch in 100–200 W isolated LED drivers operating from 277 VAC line. IC Role / Device Role / Timing Role: Primary-side power switch in flyback topology, handling 250 V DC bus and 12 A peak currents. Use Value: Low R_DS(on) reduces conduction loss by 1.8 W vs. comparable 0.18 Ω MOSFETs, extending thermal margin in sealed outdoor enclosures.	Use Scenario: Main switching element in constant-current LED driver for municipal streetlights with surge immunity requirements. IC Role / Device Role / Timing Role: High-side switch in active clamp forward converter, managing 250 V transients and 100 V/ns dV/dt. Use Value: 7.2 mJ E_AS rating withstands 6 kV surge events per IEC 61000-4-5 without derating, eliminating need for snubber networks.
Telecom Power Supplies	Industrial PLC Output Stages
Use Scenario: Primary switch in 48 V input telecom rectifier modules requiring high efficiency and long lifetime. IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge topology operating at 200 kHz. Use Value: 8.6 nC Q_g lowers gate drive loss by 35% compared to 13 nC alternatives, improving full-load efficiency by 0.7%.	Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) digital output modules rated for 240 VAC loads. IC Role / Device Role / Timing Role: Load switching device with integrated avalanche ruggedness for inductive load turn-off. Use Value: 12 A I_D rating and 100 % UIS testing ensure reliable operation across 100,000+ switching cycles with solenoid loads.

Industrial Motor Drives

LED Street Lighting Drivers

Use Scenario: High-voltage half-bridge primary switch in 100–200 W isolated LED drivers operating from 277 VAC line.

IC Role / Device Role / Timing Role: Primary-side power switch in flyback topology, handling 250 V DC bus and 12 A peak currents.

Use Value: Low R_DS(on) reduces conduction loss by 1.8 W vs. comparable 0.18 Ω MOSFETs, extending thermal margin in sealed outdoor enclosures.

Use Scenario: Main switching element in constant-current LED driver for municipal streetlights with surge immunity requirements.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward converter, managing 250 V transients and 100 V/ns dV/dt.

Use Value: 7.2 mJ E_AS rating withstands 6 kV surge events per IEC 61000-4-5 without derating, eliminating need for snubber networks.

Telecom Power Supplies

Industrial PLC Output Stages

Use Scenario: Primary switch in 48 V input telecom rectifier modules requiring high efficiency and long lifetime.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge topology operating at 200 kHz.

Use Value: 8.6 nC Q_g lowers gate drive loss by 35% compared to 13 nC alternatives, improving full-load efficiency by 0.7%.

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) digital output modules rated for 240 VAC loads.

IC Role / Device Role / Timing Role: Load switching device with integrated avalanche ruggedness for inductive load turn-off.

Use Value: 12 A I_D rating and 100 % UIS testing ensure reliable operation across 100,000+ switching cycles with solenoid loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DS, 0.22 Ω R_DS(on), TO-220FP package, higher R_thJA (65 °C/W)	Higher voltage margin but larger footprint and inferior thermal performance	Preferred only where 500 V rating is mandatory and board space permits TO-220 mounting
IRF640NPBF	200 V V_DS, 0.18 Ω R_DS(on), TO-220 package, no UIS testing, higher Q_g (44 nC)	Limited to 200 V systems; unsuitable for 250 V DC bus or surge-prone environments	Acceptable only in cost-sensitive, non-safety-critical 120 VAC-only applications with ample thermal headroom

Compared with STP20NM50FP and IRF640NPBF, SI7434ADP-T1-RE3 provides optimal balance of 250 V rating, low-loss PowerPAK packaging, and production-tested ruggedness - making it the preferred choice for compact, high-reliability industrial and lighting power stages where thermal density and surge immunity are critical.

Availability

SI7434ADP-T1-RE3 is available at Aetrix Electronics and suitable for industrial motor drives, LED street lighting drivers, telecom power supplies, and PLC output stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SI7434ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7434ADP-T1-RE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-voltage, high-efficiency primary-side switching in industrial and lighting power conversion systems.

FAQ

What is the maximum continuous drain current for SI7434ADP-T1-RE3 at 70 °C case temperature?

The SI7434ADP-T1-RE3 supports 9.8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be verified against actual PCB copper area and airflow conditions in the final design. SI7434ADP-T1-RE3 maintains safe operation within its 150 °C maximum junction temperature limit when properly mounted.

Does SI7434ADP-T1-RE3 have avalanche capability, and how is it rated?

Yes, SI7434ADP-T1-RE3 is rated for single-pulse avalanche energy (E_AS) of 7.2 mJ and single-pulse avalanche current (I_AS) of 12 A under L = 0.1 mH conditions. These values are production-tested per Vishay's 100 % UIS test protocol, confirming ruggedness against inductive switching transients common in flyback and forward converter topologies. SI7434ADP-T1-RE3 does not support repetitive avalanche operation.

What is the gate threshold voltage range for SI7434ADP-T1-RE3, and how does it affect drive compatibility?

The gate-source threshold voltage (V_GS(th)) for SI7434ADP-T1-RE3 is specified as 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers, including microcontroller GPIOs and dedicated MOSFET drivers like the TC4420. SI7434ADP-T1-RE3 achieves full enhancement at V_GS ≥ 10 V, where R_DS(on) reaches its minimum 0.150 Ω value.

Can SI7434ADP-T1-RE3 be used in synchronous rectification applications?

Yes, SI7434ADP-T1-RE3 is suitable for synchronous rectification due to its low R_DS(on) and characterized body diode parameters: V_SD = 0.8–1.2 V at I_S = 3.4 A, t_rr = 100–150 ns, and Q_rr = 356–550 nC. Its fast, low-loss body diode enables efficient freewheeling in secondary-side synchronous rectifiers for DC/DC converters operating up to 300 kHz. SI7434ADP-T1-RE3 must be driven with precise timing to avoid shoot-through.

What is the thermal resistance from junction to case (R_thJC) for SI7434ADP-T1-RE3, and why does it matter?

The maximum junction-to-case thermal resistance (R_thJC) for SI7434ADP-T1-RE3 is 2.3 °C/W, with a typical value of 1.8 °C/W. This low value is enabled by the PowerPAK® SO-8's exposed drain pad, which provides direct thermal path to the PCB copper. It matters because it directly determines how much power can be dissipated before reaching the 150 °C maximum junction temperature - for example, at 2.3 °C/W, 20 W dissipation yields a 46 °C temperature rise above case temperature. SI7434ADP-T1-RE3 leverages this for compact, heatsink-free designs.

SI7434ADP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta), 12.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 125 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 54.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7434ADP-T1-RE3 FAQ

1.How can I place an order for SI7434ADP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7434ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7434ADP-T1-RE3 reliable?

The price and inventory of SI7434ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7434ADP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SI7434ADP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7434ADP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7434ADP-T1-RE3?

SI7434ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7434ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7434ADP-T1-RE3?

For technical support, including SI7434ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7434ADP-T1-RE3 requirements.

6.How does Aetrix verify that SI7434ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SI7434ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7434ADP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SI7434ADP-T1-RE3?

All SI7434ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7434ADP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7434ADP-T1-RE3 part is unused and in its original packaging.

Return procedure for SI7434ADP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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