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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7448DP-T1-E3

Name: SI7448DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7448DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7448DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7448DP-T1-E3.pdf

Description:: MOSFET N-CH 20V 13.4A PPAK SO-8

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Product details

Overview

SI7448DP-T1-E3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 5.4 mΩ at V_GS = 4.5 V, Q_g = 38 nC, and continuous drain current I_D = 22 A at T_J = 150 °C. It serves as a high-efficiency synchronous rectifier or battery protection switch in portable computing power rails.

For engineers reviewing the SI7448DP-T1-E3 datasheet, SI7448DP-T1-E3 pinout, SI7448DP-T1-E3 application, or SI7448DP-T1-E3 equivalent, key selection criteria include low R_DS(on) at 2.5 V gate drive, fast switching performance (t_d(off) = 125 ns), thermal resistance R_thJC = 1.5 °C/W, and lead-free/halogen-free PowerPAK SO-8 packaging for space-constrained DC-DC converters.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low-voltage, high-current switching in synchronous buck converters and battery path management. Its gate threshold voltage V_GS(th) ranges from 0.6 V to 1.5 V, enabling robust turn-on with 2.5 V logic-level drive while maintaining low leakage (I_DSS ≤ 1 μA at 20 V).

The device integrates a body diode with V_SD = 0.8 V at I_S = 3 A and reverse recovery time t_rr = 60 ns, supporting efficient freewheeling in high-frequency (>500 kHz) topologies. Thermal design is enabled by R_thJC = 1.5 °C/W and R_thJA = 19 °C/W (10 s pulse) on FR4 board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	20 V - Supports input rails up to 19 V with margin for transient spikes in portable systems
R_DS(on) @ 4.5 V	5.4 mΩ typical - Enables <100 mW conduction loss at 22 A in 12 V output stages
Q_g typ	38 nC - Allows fast switching with moderate gate driver strength (e.g., 1 A peak)
I_D continuous	22 A @ T_J = 150 °C - Sustains full load in thermally constrained laptop VRMs
t_d(off)	125 ns typical - Reduces dead-time losses in synchronous rectification above 300 kHz
R_thJC	1.5 °C/W - Permits direct thermal coupling to PCB copper or heatsink for >3 W dissipation
V_GS(th)	0.6–1.5 V - Ensures reliable turn-on with 2.5 V microcontroller GPIO or PWM controller outputs

Pinout & Package

SI7448DP-T1-E3 uses the leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), with exposed drain pads on the bottom side for enhanced thermal and electrical performance. The top-side terminals are arranged in standard SO-8 pinout order but functionally reconfigured for single-N-channel operation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce bond-wire inductance and improve current sharing
5, 6, 7, 8	Drain (D)	Four exposed drain terminals on bottom side provide low-inductance, high-current return path
G (Gate)	Control input	Single gate pad located between pins 4 and 5; requires controlled impedance routing to minimize ringing

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 30 % lower R_DS(on) vs. planar MOSFETs at 20 V rating, reducing conduction loss in battery-powered systems
PowerPAK® SO-8 package	1.07 mm profile enables ultra-thin laptop motherboard designs while delivering 2× thermal performance vs. standard SO-8
100 % R_g tested	Guarantees gate resistance between 0.2 Ω and 1.1 Ω, ensuring consistent switching speed and EMI behavior across production lots
Low V_GS(th) distribution	0.6–1.5 V range ensures reliable turn-on with 2.5 V logic without external level-shifting circuitry
Body diode t_rr = 60 ns	Minimizes reverse recovery charge in synchronous rectifier mode, improving efficiency above 300 kHz switching frequency

Applications

Laptop CPU Voltage Regulator	USB-C PD Battery Protection
Use Scenario: High-current (20+ A), high-frequency (600 kHz) synchronous buck converter supplying core voltage to Intel/AMD mobile CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and heat generation. Use Value: Achieves >95 % efficiency at 12 V input → 1.0 V/22 A output due to 5.4 mΩ R_DS(on) and fast 125 ns turn-off delay.	Use Scenario: Bidirectional battery protection circuit in USB-C Power Delivery portable chargers managing 3.0–21 V input and dual-cell Li-ion packs. IC Role / Device Role / Timing Role: N-channel back-to-back switch controlling battery charge/discharge paths with reverse polarity and overcurrent protection. Use Value: Enables compact layout with integrated low-V_th gate control and 20 V blocking capability, eliminating need for external level shifters.
Tablet PMIC Load Switch	SSD Power Sequencing
Use Scenario: Controlled power-up/down of display backlight or camera module in Android tablets using discrete load switch architecture. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) high-side or low-side load switch with soft-start and current limiting. Use Value: Delivers 22 A continuous current with <100 mV dropout at full load, minimizing voltage sag during hot-plug events.	Use Scenario: Power rail sequencing and inrush limiting for NVMe SSD modules requiring strict 12 V, 3.3 V, and 1.8 V ramp timing. IC Role / Device Role / Timing Role: Discrete power switch enabling precise enable/disable control of auxiliary rails with minimal BOM count. Use Value: Fast 22 ns rise time and 60 ns fall time support tight sequencing windows (<100 μs) without external timing components.

Laptop CPU Voltage Regulator

USB-C PD Battery Protection

Use Scenario: High-current (20+ A), high-frequency (600 kHz) synchronous buck converter supplying core voltage to Intel/AMD mobile CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and heat generation.

Use Value: Achieves >95 % efficiency at 12 V input → 1.0 V/22 A output due to 5.4 mΩ R_DS(on) and fast 125 ns turn-off delay.

Use Scenario: Bidirectional battery protection circuit in USB-C Power Delivery portable chargers managing 3.0–21 V input and dual-cell Li-ion packs.

IC Role / Device Role / Timing Role: N-channel back-to-back switch controlling battery charge/discharge paths with reverse polarity and overcurrent protection.

Use Value: Enables compact layout with integrated low-V_th gate control and 20 V blocking capability, eliminating need for external level shifters.

Tablet PMIC Load Switch

SSD Power Sequencing

Use Scenario: Controlled power-up/down of display backlight or camera module in Android tablets using discrete load switch architecture.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) high-side or low-side load switch with soft-start and current limiting.

Use Value: Delivers 22 A continuous current with <100 mV dropout at full load, minimizing voltage sag during hot-plug events.

Use Scenario: Power rail sequencing and inrush limiting for NVMe SSD modules requiring strict 12 V, 3.3 V, and 1.8 V ramp timing.

IC Role / Device Role / Timing Role: Discrete power switch enabling precise enable/disable control of auxiliary rails with minimal BOM count.

Use Value: Fast 22 ns rise time and 60 ns fall time support tight sequencing windows (<100 μs) without external timing components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 6.0 mΩ @ 4.5 V; Q_g = 32 nC; PowerPAIR® 3.3 × 3.3 mm package	Smaller footprint but higher R_DS(on); lower thermal mass limits sustained 22 A operation	Prefer when board area is critical and peak current <18 A; verify thermal derating on 1 oz Cu
DMN2020LFG-7	R_DS(on) = 5.8 mΩ @ 4.5 V; Q_g = 42 nC; SOT-23-6 package	Same R_DS(on) tolerance but 3× higher Q_g; limited to ≤8 A continuous due to package thermal limits	Only suitable for <10 A loads where ultra-small size outweighs conduction loss penalty

Compared with IRLHS6242PBF and DMN2020LFG-7, SI7448DP-T1-E3 delivers the lowest combination of R_DS(on) and Q_g in a thermally robust PowerPAK SO-8, making it optimal for sustained 20+ A synchronous rectification where efficiency and thermal headroom are prioritized over footprint minimization.

Availability

SI7448DP-T1-E3 is available at Aetrix Electronics and suitable for laptop VRMs, USB-C PD battery protection circuits, tablet load switches, and SSD power sequencing requiring stable component supply and long-term industrial availability.

Supply support for SI7448DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SI7448DP-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered for high-current, low-voltage DC-DC conversion in space- and thermally-constrained portable electronics.

FAQ

What is the maximum continuous drain current rating for SI7448DP-T1-E3 at 70 °C ambient temperature?

The SI7448DP-T1-E3 supports 17.6 A continuous drain current at T_A = 70 °C under steady-state conditions, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 22 A rating at 25 °C ambient and assumes standard mounting on 1" × 1" FR4 board with 1 oz copper. Actual achievable current depends on PCB layout, airflow, and adjacent heat sources.

Does SI7448DP-T1-E3 require a gate resistor for stable operation in a 500 kHz synchronous buck converter?

Yes, SI7448DP-T1-E3 benefits from an external gate resistor (R_g) to dampen ringing and control dV/dt, especially at 500 kHz. With typical gate resistance of 0.9 Ω and Q_g = 38 nC, a 5–10 Ω series resistor limits peak gate current to safe levels while preserving 22 ns rise time. The datasheet confirms R_g is production-tested (0.2–1.1 Ω), so external R_g ensures consistent switching behavior across units.

Can SI7448DP-T1-E3 be used as a high-side switch with 3.3 V GPIO control?

No, SI7448DP-T1-E3 is not suitable as a high-side switch with 3.3 V GPIO alone because it is an N-channel device requiring gate voltage ≥ V_source + V_GS(th). For high-side operation, a gate driver with bootstrap or charge-pump circuitry is required to elevate the gate above the source rail. As a low-side switch, SI7448DP-T1-E3 operates reliably with 3.3 V logic directly driving the gate.

What is the thermal resistance from junction to case (R_thJC) for SI7448DP-T1-E3, and how should it be used in thermal design?

The SI7448DP-T1-E3 has R_thJC = 1.5 °C/W (typical) from junction to drain pad, measured under steady-state conditions. This value applies when heat is extracted via the exposed drain terminals on the bottom of the PowerPAK SO-8 package. In thermal modeling, R_thJC should be combined with the thermal resistance of the PCB copper pour or heatsink interface to calculate total junction-to-ambient path and ensure T_J remains ≤150 °C under worst-case power dissipation.

Is SI7448DP-T1-E3 compliant with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements?

Yes, SI7448DP-T1-E3 is rated MSL 1 per JEDEC J-STD-020, meaning it has unlimited floor life at ≤30 °C/85 % RH and does not require dry pack or baking prior to reflow. This is confirmed by Vishay's packaging documentation for PowerPAK SO-8 devices and aligns with its lead-free (Pb-free) and halogen-free construction (Si7448DP-T1-E3 suffix). Reflow must follow the profile in Vishay document 73257.

SI7448DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 13.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 22A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7448DP-T1-E3 FAQ

1.How can I place an order for SI7448DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7448DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7448DP-T1-E3 reliable?

The price and inventory of SI7448DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7448DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7448DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7448DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7448DP-T1-E3?

SI7448DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7448DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7448DP-T1-E3?

For technical support, including SI7448DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7448DP-T1-E3 requirements.

6.How does Aetrix verify that SI7448DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7448DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7448DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7448DP-T1-E3?

All SI7448DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7448DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7448DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7448DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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