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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7448DP-T1-GE3

Name: SI7448DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7448DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7448DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7448DP-T1-GE3.pdf

Description:: MOSFET N-CH 20V 13.4A PPAK SO-8

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Product details

Overview

SI7448DP-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) fast-switching MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.0065 Ω at V_GS = 4.5 V, Q_g = 38 nC, and continuous drain current of 22 A at T_J = 150 °C. It serves as a high-efficiency synchronous rectifier or battery protection switch in portable computing power rails.

For engineers reviewing the SI7448DP-T1-GE3 datasheet, SI7448DP-T1-GE3 pinout, SI7448DP-T1-GE3 application, or SI7448DP-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 2.5 V gate drive, thermal resistance R_thJA = 24 °C/W (10 s), and lead-free/halogen-free compliance per ordering code -T1-GE3.

Technical Context

This MOSFET uses Vishay's TrenchFET® process for enhanced conduction efficiency and fast switching. Its gate threshold voltage (V_GS(th)) ranges from 0.6 V to 1.5 V, enabling robust turn-on with low-voltage controllers. The device integrates a body diode with V_SD = 0.8 V typical at I_S = 3 A and exhibits low dynamic losses via Q_gd = 8.5 nC and t_f = 60–90 ns.

Designed for surface-mount use on FR4 boards, the PowerPAK SO-8 package features exposed copper drain terminals on the bottom side for improved thermal conduction. Thermal transient impedance data confirms effective junction-to-ambient heat dissipation under pulsed loads, supporting high-current, space-constrained DC/DC converter outputs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	20 V - Supports input/output rails up to 19 V with margin for transients in portable systems.
R_DS(on) @ 4.5 V	0.0065 Ω - Enables <15 mW conduction loss at 22 A, critical for high-efficiency synchronous rectification.
Q_g typ	38 nC - Determines gate drive power requirement and switching speed in PWM-controlled buck converters.
I_D continuous	22 A @ T_J = 150 °C - Specifies maximum steady-state current under worst-case thermal conditions.
R_thJA max (10 s)	24 °C/W - Defines temperature rise above ambient during short-duration peak loads (e.g., CPU burst current).
V_GS(th) range	0.6–1.5 V - Ensures reliable turn-on with 2.5 V or 3.3 V logic-level gate drivers without level shifting.
C_iss typ	~3500 pF @ V_DS = 10 V - Impacts EMI generation and gate driver loading in high-frequency switching applications.

Pinout & Package

SI7448DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), with exposed drain pads on the bottom side for thermal and electrical connection. The top-side pin numbering follows standard SO-8 orientation, with Gate (G), Source (S), and Drain (D) terminals arranged for optimal PCB layout in high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal die; electrically tied together and soldered to large ground plane for low-inductance return path.
5, 6, 7, 8	Drain (D)	Exposed copper drain terminals on bottom side; must be connected to power plane for thermal management and current conduction.
G (Pin 1 top-side marking)	Gate (G)	Single gate input; requires low-impedance drive due to Q_g = 38 nC and R_g = 0.2–1.1 Ω (measured).

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers ultra-low R_DS(on) at low V_GS, enabling efficient operation with 2.5 V microcontroller outputs.
PowerPAK® SO-8 package	Reduces thermal resistance by ~30% vs. standard SO-8; 1.07 mm profile supports ultra-thin portable designs.
100% R_g tested	Ensures consistent gate drive timing and predictable switching behavior across production lots.
Lead (Pb)-free and halogen-free (-GE3)	Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements for environmentally compliant manufacturing.
Low Q_gd/Q_g ratio	Q_gd = 8.5 nC / Q_g = 38 nC ≈ 22% - Improves hard-switching efficiency and reduces Miller-induced shoot-through risk.

Applications

Portable Computer Battery Protection	Synchronous Rectification in DC/DC Converters
Use Scenario: Bidirectional battery isolation and overcurrent cutoff in ultrabook battery management systems. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET used as load switch and reverse-current blocker between battery and system rail. Use Value: R_DS(on) = 0.0065 Ω minimizes voltage drop and power loss during charging/discharging, extending runtime and reducing thermal stress.	Use Scenario: High-current output stage in 1–3 MHz buck converters powering CPU/GPU cores. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: Fast t_f = 60–90 ns and low Q_gd enable clean turn-off with minimal dead-time penalty, preserving regulation accuracy.
USB-C Power Delivery Input Switching	Hot-Swap Controller Back-End FET
Use Scenario: Input power path control in USB-C PD sink devices accepting up to 20 V input. IC Role / Device Role / Timing Role: High-side or low-side switch managing connection between Type-C receptacle and system PMIC. Use Value: V_DS = 20 V rating and 1.5 V V_GS(th) max ensure safe operation with 3.3 V gate drivers while blocking reverse current.	Use Scenario: Inrush current limiting and fault isolation in industrial backplane hot-swap modules. IC Role / Device Role / Timing Role: Main pass FET controlled by dedicated hot-swap IC (e.g., LTC4215) to manage board insertion. Use Value: R_thJC = 1.5 °C/W enables rapid heat transfer to heatsink or PCB copper, sustaining 22 A during sustained fault conditions.

Portable Computer Battery Protection

Synchronous Rectification in DC/DC Converters

Use Scenario: Bidirectional battery isolation and overcurrent cutoff in ultrabook battery management systems.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET used as load switch and reverse-current blocker between battery and system rail.

Use Value: R_DS(on) = 0.0065 Ω minimizes voltage drop and power loss during charging/discharging, extending runtime and reducing thermal stress.

Use Scenario: High-current output stage in 1–3 MHz buck converters powering CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: Fast t_f = 60–90 ns and low Q_gd enable clean turn-off with minimal dead-time penalty, preserving regulation accuracy.

USB-C Power Delivery Input Switching

Hot-Swap Controller Back-End FET

Use Scenario: Input power path control in USB-C PD sink devices accepting up to 20 V input.

IC Role / Device Role / Timing Role: High-side or low-side switch managing connection between Type-C receptacle and system PMIC.

Use Value: V_DS = 20 V rating and 1.5 V V_GS(th) max ensure safe operation with 3.3 V gate drivers while blocking reverse current.

Use Scenario: Inrush current limiting and fault isolation in industrial backplane hot-swap modules.

IC Role / Device Role / Timing Role: Main pass FET controlled by dedicated hot-swap IC (e.g., LTC4215) to manage board insertion.

Use Value: R_thJC = 1.5 °C/W enables rapid heat transfer to heatsink or PCB copper, sustaining 22 A during sustained fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 0.012 Ω @ 4.5 V; smaller SOT-23 package; lower I_D = 4.3 A	Targeted at sub-5 A loads; unsuitable for 22 A synchronous rectification	Select SI7448DP-T1-GE3 when >15 A continuous current and <7 mΩ R_DS(on) are required.
DMN3025LSD-13	R_DS(on) = 0.0032 Ω @ 4.5 V; dual-N in SO-8; higher Q_g = 52 nC	Offers dual configuration but higher gate charge increases driver complexity and switching loss	Choose SI7448DP-T1-GE3 for single-FET simplicity, lower Q_g, and proven thermal performance in single-ended layouts.

Compared with IRLML6344TRPBF and DMN3025LSD-13, SI7448DP-T1-GE3 delivers optimal balance of low R_DS(on), moderate Q_g, and validated thermal performance in PowerPAK SO-8-making it preferred for 15–22 A portable power switches where board area and thermal headroom are constrained.

Availability

SI7448DP-T1-GE3 is available at Aetrix Electronics and suitable for portable computing battery protection, synchronous rectification in high-frequency DC/DC converters, and USB-C power delivery input switching requiring stable component supply and full RoHS/halogen-free compliance.

Supply support for SI7448DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, thermally optimized packaging.

The SI7448DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-current, low-voltage DC/DC conversion and battery management in space- and efficiency-critical portable electronics.

FAQ

What is the maximum continuous drain current rating for SI7448DP-T1-GE3 at 70 °C ambient?

The SI7448DP-T1-GE3 supports 17.6 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This value accounts for derating due to reduced thermal dissipation at elevated ambient temperatures and assumes proper PCB copper area per Vishay's recommended pad layout in Application Note 826. SI7448DP-T1-GE3 must be mounted on ≥1" × 1" FR4 with adequate thermal vias to achieve this rating.

Does SI7448DP-T1-GE3 require a gate resistor for stability in high-speed switching?

Yes - while SI7448DP-T1-GE3 has a measured gate resistance (R_g) of 0.2–1.1 Ω, an external series gate resistor (typically 1–10 Ω) is recommended to dampen ringing, control dV/dt, and prevent false turn-on from Miller coupling. The datasheet's dynamic test conditions (e.g., R_g = 6 Ω for switching time measurements) confirm this practice. SI7448DP-T1-GE3 gate drive design must account for Q_g = 38 nC and low threshold voltage to avoid shoot-through in half-bridge configurations.

Can SI7448DP-T1-GE3 be used in a high-side configuration with 5 V gate drive?

No - SI7448DP-T1-GE3 is an N-channel MOSFET and cannot be directly driven high-side with 5 V referenced to ground. For high-side operation, a gate driver with floating supply or charge pump (e.g., TC4427, LM5113) is required to elevate the gate voltage above the source potential. SI7448DP-T1-GE3 is optimized for low-side or synchronous rectifier roles where source is grounded or near ground potential.

What is the thermal resistance from junction to case (R_thJC) for SI7448DP-T1-GE3?

The SI7448DP-T1-GE3 has a maximum junction-to-case (drain) thermal resistance of 1.8 °C/W under steady-state conditions, with a typical value of 1.5 °C/W. This parameter reflects heat flow from the silicon die to the exposed drain paddle, and is critical for estimating temperature rise when the drain is soldered to a thermal pad or heatsink. SI7448DP-T1-GE3 thermal performance depends on PCB copper area, via count, and interface material per Vishay's PowerPAK SO-8 mounting guidelines.

Is SI7448DP-T1-GE3 suitable for automotive applications?

SI7448DP-T1-GE3 is not AEC-Q101 qualified and is intended for commercial/industrial portable electronics, not automotive under-hood or safety-critical systems. While its operating temperature range (−55 °C to +150 °C) meets some automotive ambient requirements, Vishay does not specify automotive-grade reliability testing, PPAP documentation, or failure-in-time (FIT) data for SI7448DP-T1-GE3. For automotive use, consider Vishay's AEC-Q101-qualified alternatives such as SQJQ480E.

SI7448DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 13.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 22A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7448DP-T1-GE3 FAQ

1.How can I place an order for SI7448DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7448DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7448DP-T1-GE3 reliable?

The price and inventory of SI7448DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7448DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7448DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7448DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7448DP-T1-GE3?

SI7448DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7448DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7448DP-T1-GE3?

For technical support, including SI7448DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7448DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7448DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7448DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7448DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7448DP-T1-GE3?

All SI7448DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7448DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7448DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7448DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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