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Vishay Siliconix SI7450DP-T1-RE3
- Part No.:
- SI7450DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
SI7450DP-T1-RE3.pdf
- Description:
- N-CHANNEL 200-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,507
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Product details
Overview
SI7450DP-T1-RE3 from Vishay Siliconix is an N-channel 200 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 0.065 Ω (typ.) at VGS = 10 V and 4 A, Qg = 34 nC (typ.), and continuous drain current of 5.3 A at TA = 25 °C. It serves as a primary-side switch in high-density DC/DC converters for telecom/server 48 V systems.
For engineers reviewing the SI7450DP-T1-RE3 datasheet, SI7450DP-T1-RE3 pinout, SI7450DP-T1-RE3 application, or SI7450DP-T1-RE3 equivalent, key selection criteria include its 200 V VDS, low 1.07 mm profile, PWM-optimized fast switching, 100 % Rg tested specification, and thermal resistance RthJC = 1.5 °C/W (typ.) enabling high-power density designs.
Technical Context
This MOSFET employs trench gate technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Qg = 34 nC, Qgd = 12 nC) supports efficient hard-switching operation in isolated flyback and forward topologies.
The device features a thermally enhanced PowerPAK® SO-8 package with exposed drain pad for direct board heat sinking, achieving RthJA = 19 °C/W (t ≤ 10 s) and RthJC = 1.5 °C/W - matching DPAK-level thermal performance while retaining SO-8 footprint compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports primary-side switching in 48 V telecom DC/DC with ≥2× voltage margin |
| RDS(on) max @ VGS = 10 V | 0.080 Ω - enables <1.3 W conduction loss at 4 A, critical for high-efficiency power stages |
| Qg typ. | 34 nC - determines gate drive power and switching speed in PWM-controlled converters |
| ID continuous @ TA = 25 °C | 5.3 A - defines maximum steady-state current handling without heatsink in standard FR4 layout |
| RthJC max | 1.8 °C/W - allows direct thermal coupling to PCB copper, supporting >15 W dissipation with proper layout |
| VGS(th) | 2–4.5 V - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers |
| IDSS max @ VDS = 200 V | 1 μA - confirms robust blocking capability under high-voltage standby conditions |
Pinout & Package
PowerPAK® SO-8 single-channel leadless package (5.15 mm × 6.15 mm × 1.07 mm), compatible with standard SO-8 land patterns but featuring extended drain pad area for enhanced thermal transfer. Bottom-side exposed drain terminals provide low-inductance, low-resistance path to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Eight-drain-terminal configuration maximizes copper contact area for thermal dissipation and minimizes RDS(on) contribution from package |
| G (Gate) | Gate (G) | Single gate terminal located at Pin 1 side; requires controlled impedance routing to suppress ringing during fast transitions |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Enables 0.065 Ω RDS(on) at 10 V drive while maintaining 200 V breakdown - critical for high-efficiency, high-voltage SMPS |
| PowerPAK® SO-8 package | 1.07 mm height and SO-8 footprint allow drop-in replacement in space-constrained telecom/server boards without layout change |
| PWM-optimized switching | Qgd/Qgs ratio of ~1.6 supports clean hard-switching with minimal shoot-through risk in synchronous rectification |
| 100 % Rg tested | Guarantees gate resistance between 0.2–1.5 Ω, ensuring consistent turn-on/turn-off timing across production lots |
| Low thermal resistance | RthJC = 1.5 °C/W (typ.) enables junction temperature rise of only ~2.7 °C per watt - essential for stable operation in sealed enclosures |
Applications
| Telecom DC/DC Primary Switch | Industrial 42 V Automotive Supply |
|---|---|
Use Scenario: Primary-side switch in isolated 48 V input, 12 V output flyback converter for 5G base station power modules. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding during PWM on-time. Use Value: 200 V rating provides 2.5× safety margin over 48 V rail; 34 nC Qg enables 500 kHz operation with <1.5 W gate drive loss. | Use Scenario: Main switching element in 42 V battery-fed buck converter powering ADAS ECUs in commercial vehicles. IC Role / Device Role / Timing Role: Synchronous rectifier driver in high-side configuration, operating with 100 ns dead-time control. Use Value: RDS(on) = 0.065 Ω (typ.) limits conduction loss to <1.1 W at 13 A peak, reducing thermal load in engine bay environments. |
| High-Density Server PSU | Industrial Motor Drive Gate Driver Stage |
Use Scenario: Active clamp forward converter primary switch in 1U server power supply with <1.5 cm³/cm² power density target. IC Role / Device Role / Timing Role: Fast-turning main switch synchronized to 300–600 kHz carrier, requiring low Qgd to minimize Miller-induced turn-on. Use Value: Qgd = 12 nC (typ.) reduces dv/dt-induced false triggering risk; 1.07 mm profile fits under low-profile heatsinks. | Use Scenario: Half-bridge high-side switch in 24 V industrial servo drive output stage driving 100 W BLDC motor. IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap gate driver, requiring robust VGS(th) stability over -40 to +125 °C. Use Value: VGS(th) = 2–4.5 V with ±200 mV/°C tempco ensures reliable turn-on across full industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | TO-220 package; RDS(on) = 0.18 Ω @ 10 V; Qg = 25 nC; no Rg test | Requires heatsink and larger PCB area; unsuitable for ultra-thin telecom modules | Preferred where cost-sensitive, non-space-constrained industrial designs accept higher thermal overhead |
| IRF640NPBF | TO-220AB; RDS(on) = 0.18 Ω @ 10 V; Qg = 39 nC; 200 V rating confirmed | Larger footprint and higher RDS(on) increase conduction loss by 120 % at 4 A vs. SI7450DP-T1-RE3 | Used in legacy designs where TO-220 mechanical mounting is mandatory and efficiency targets are relaxed |
Compared with STP20NM20 and IRF640NPBF, SI7450DP-T1-RE3 delivers 56 % lower RDS(on) and 40 % smaller form factor, enabling 30 % higher power density in telecom/server applications - but requires reflow-compatible PCB layout due to leadless construction.
Availability
SI7450DP-T1-RE3 is available at Aetrix Electronics and suitable for telecom/server 48 V DC/DC, industrial 42 V automotive power supplies, and high-density primary-side switching applications requiring stable component supply and long-term lifecycle support.
Supply support for SI7450DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.
The SI7450DP product line is engineered for high-voltage, high-frequency switching in compact power conversion systems - targeting telecom infrastructure, server PSUs, and industrial automation where low RDS(on), fast switching, and thermal robustness are critical.
FAQ
What is the maximum continuous drain current rating for SI7450DP-T1-RE3 at 70 °C ambient temperature?
The SI7450DP-T1-RE3 supports 4.3 A continuous drain current at TA = 70 °C when mounted on a standard 1" × 1" FR4 board. This derating reflects thermal limitations of the PowerPAK® SO-8 package under natural convection; forced airflow or enhanced copper pour can extend usable current capacity. The datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous drain current (TJ = 150 °C)" condition.
Does SI7450DP-T1-RE3 require a heatsink for operation at 5.3 A continuous current?
No, SI7450DP-T1-RE3 does not require an external heatsink when operating at 5.3 A continuous current, provided it is mounted on a standard 1" × 1" FR4 board with adequate copper pour on the drain pad. Its RthJA = 52 °C/W (steady state) and RthJC = 1.5 °C/W enable sufficient self-cooling; however, thermal simulation is recommended for layouts with limited copper area or elevated ambient temperatures above 50 °C.
Is SI7450DP-T1-RE3 compatible with standard SO-8 footprint PCBs?
Yes, SI7450DP-T1-RE3 uses the PowerPAK® SO-8 package with identical 5.15 mm × 6.15 mm outline and pin spacing as standard SO-8, allowing direct substitution. However, its leadless construction requires full-surface soldering of the bottom-side drain pad - unlike gull-wing leads - so the PCB must use a thermal pad with appropriate stencil design and reflow profile per Vishay document 73257.
What is the gate threshold voltage range for SI7450DP-T1-RE3, and how does it affect logic-level drive compatibility?
The SI7450DP-T1-RE3 has a gate threshold voltage (VGS(th)) range of 2.0–4.5 V at ID = 250 μA, making it fully compatible with 3.3 V and 5 V logic-level gate drivers. This ensures robust turn-on even with marginal drive margins, while the 200 mV/°C VDS temperature coefficient maintains stable switching behavior across -55 to +150 °C junction temperature range.
How does the total gate charge (Qg) of SI7450DP-T1-RE3 impact switching losses in a 500 kHz DC/DC converter?
With Qg = 34 nC (typ.), the SI7450DP-T1-RE3 incurs gate drive power loss of approximately 1.7 W at 500 kHz and 10 V gate swing (Pdrive = Qg × VGS × fsw). This value directly influences driver selection and thermal design; lower Qg would reduce loss, but SI7450DP-T1-RE3 balances this with optimized Qgd/Qgs ratio to maintain switching integrity at high frequency.
SI7450DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A (Ta), 19.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
SI7450DP-T1-RE3 FAQ
1.How can I place an order for SI7450DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7450DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7450DP-T1-RE3 reliable?
The price and inventory of SI7450DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7450DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SI7450DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7450DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7450DP-T1-RE3?
SI7450DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7450DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7450DP-T1-RE3?
For technical support, including SI7450DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7450DP-T1-RE3 requirements.
6.How does Aetrix verify that SI7450DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SI7450DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7450DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SI7450DP-T1-RE3?
All SI7450DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7450DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7450DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SI7450DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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