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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7454DP-T1-E3

Name: SI7454DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7454DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7454DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7454DP-T1-E3.pdf

Description:: MOSFET N-CH 100V 5A PPAK SO-8

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Product details

Overview

SI7454DP-T1-E3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 7.8 A continuous drain current at 25 °C, with R_DS(on) of 0.034 Ω at V_GS = 10 V and 0.040 Ω at V_GS = 6 V, optimized for fast-switching PWM applications in high-density DC/DC converters.

For engineers reviewing the SI7454DP-T1-E3 datasheet, SI7454DP-T1-E3 pinout, SI7454DP-T1-E3 application, or SI7454DP-T1-E3 equivalent, key selection considerations include its 100 V V_DS, low thermal resistance (R_thJA = 26 °C/W max), 24 nC total gate charge, 1.07 mm profile, and compatibility with standard SO-8 land patterns.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, and it supports robust pulsed operation with I_DM = 30 A and single-pulse avalanche energy E_AS = 31 mJ.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 4 A and exhibits dynamic parameters including Q_gd = 5.4 nC and t_f = 20–40 ns, enabling efficient operation in hard-switched and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for primary-side switch in 48 V telecom/server DC/DC systems
R_DS(on) @ V_GS = 10 V	0.034 Ω - Enables <2.1 W conduction loss at 7.8 A, critical for thermal management in compact designs
Q_g	24 nC - Low gate charge reduces driver power and switching losses in high-frequency PWM stages
I_D (continuous)	7.8 A @ T_A = 25 °C - Supports medium-power switching in industrial and 42 V automotive subsystems
R_thJA (steady state)	65 °C/W max - Requires careful PCB copper planning to maintain T_J < 150 °C under full load
V_GS(th)	2–4 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers
E_AS	31 mJ - Provides ruggedness against inductive switching transients in bridge configurations

Pinout & Package

SI7454DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), featuring exposed drain pads on the bottom for enhanced thermal conduction. It shares the same footprint and pinout as standard SO-8 but replaces leads with solderable copper terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Eight-terminal drain pad maximizes copper area for heat spreading and low-inductance power path
Gate (G)	Gate (G)	Single gate terminal located at Pin 1 side - requires controlled impedance routing to minimize ringing

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-efficiency switching at 100 V
PowerPAK® SO-8 package	Enables direct drop-in replacement on existing SO-8 layouts while delivering DPAK-level thermal performance (R_thJC = 2.0 °C/W max)
PWM-optimized switching	Low Q_gd/Q_gs ratio (0.71) and fast t_r/t_f support >500 kHz operation without excessive gate drive loss
100 % R_g tested	Guarantees gate resistance between 0.5 Ω and 2.2 Ω, ensuring consistent turn-on timing across production lots
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, suitable for green manufacturing

Applications

Primary-Side DC/DC Switch	Telecom 48 V Full-Bridge
Use Scenario: High-density isolated DC/DC converter in space-constrained server power supplies. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300–600 kHz with zero-voltage switching (ZVS) assist. Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 1 kW/in³ power density.	Use Scenario: Half-bridge or full-bridge topology in telecom base station power modules. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 48 V input with 20–30 A peak currents. Use Value: Avalanche ruggedness (E_AS = 31 mJ) and thermal stability ensure reliability during bus transients and load dumps.
Industrial Motor Drive Stage	42 V Automotive DC/DC
Use Scenario: Gate-driven H-bridge for BLDC motor control in factory automation equipment. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter stage, commutated at 10–20 kHz. Use Value: Fast t_on/t_off (≤30 ns / ≤70 ns) enables precise PWM duty cycle control and reduced torque ripple.	Use Scenario: Step-down converter supplying 12 V or 5 V from 42 V battery in next-gen automotive subsystems. IC Role / Device Role / Timing Role: Main power switch in synchronous buck regulator with external controller. Use Value: Wide V_GS(th) range and stable R_DS(on) over -55 to +150 °C ensure robust start-up and cold-cranking performance.

Primary-Side DC/DC Switch

Telecom 48 V Full-Bridge

Use Scenario: High-density isolated DC/DC converter in space-constrained server power supplies.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300–600 kHz with zero-voltage switching (ZVS) assist.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 1 kW/in³ power density.

Use Scenario: Half-bridge or full-bridge topology in telecom base station power modules.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 48 V input with 20–30 A peak currents.

Use Value: Avalanche ruggedness (E_AS = 31 mJ) and thermal stability ensure reliability during bus transients and load dumps.

Industrial Motor Drive Stage

42 V Automotive DC/DC

Use Scenario: Gate-driven H-bridge for BLDC motor control in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter stage, commutated at 10–20 kHz.

Use Value: Fast t_on/t_off (≤30 ns / ≤70 ns) enables precise PWM duty cycle control and reduced torque ripple.

Use Scenario: Step-down converter supplying 12 V or 5 V from 42 V battery in next-gen automotive subsystems.

IC Role / Device Role / Timing Role: Main power switch in synchronous buck regulator with external controller.

Use Value: Wide V_GS(th) range and stable R_DS(on) over -55 to +150 °C ensure robust start-up and cold-cranking performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7450DP-T1-E3	R_DS(on) = 0.022 Ω @ 10 V (lower), Q_g = 32 nC (higher), same PowerPAK SO-8 package	Better conduction loss but higher gate drive demand; suited for lower-frequency, high-current apps	Prefer when thermal budget allows higher gate loss and R_DS(on) dominates system efficiency
IRF7470PBF	Standard SO-8 package, R_DS(on) = 0.032 Ω @ 10 V, R_thJA = 62 °C/W, no 100 % R_g test	Higher thermal resistance limits power density; not recommended for space-constrained designs	Select only if legacy SO-8 layout cannot accommodate PowerPAK's extended drain pad

Compared with SI7454DP-T1-E3, Si7450DP-T1-E3 trades higher gate charge for lower on-resistance, while IRF7470PBF sacrifices thermal performance for broader legacy compatibility-making SI7454DP-T1-E3 optimal for balanced high-frequency, high-density applications.

Availability

SI7454DP-T1-E3 is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, and 42 V automotive DC/DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI7454DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SI7454DP-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-efficiency, high-density DC/DC conversion in telecom, industrial, and automotive systems where thermal and switching performance are critical.

FAQ

What is the maximum junction temperature rating for SI7454DP-T1-E3?

The SI7454DP-T1-E3 has an operating junction temperature range of -55 °C to +150 °C. This rating is specified in the Absolute Maximum Ratings table and confirmed across all thermal transient and steady-state characterization curves in the datasheet. The device must be operated within this limit to ensure reliability and avoid permanent degradation. Derating of I_D and P_D is required above T_A = 25 °C per the thermal resistance values provided.

Does SI7454DP-T1-E3 support logic-level gate drive?

Yes, SI7454DP-T1-E3 supports logic-level gate drive: its gate threshold voltage V_GS(th) is specified from 2 V to 4 V, and it delivers R_DS(on) = 0.040 Ω at V_GS = 6 V. This allows direct interfacing with 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry, provided sufficient peak gate current is supplied to charge Q_g = 24 nC within required switching times.

Can SI7454DP-T1-E3 be mounted on a standard SO-8 PCB footprint?

Yes, SI7454DP-T1-E3 uses the PowerPAK® SO-8 package, which maintains identical outline, pin spacing, and pinout as the standard SO-8. Vishay explicitly confirms direct substitution capability in Application Note AN821. However, optimal thermal performance requires extending the drain pad beyond the standard SO-8 land pattern to leverage the exposed bottom-side copper.

What is the avalanche rating of SI7454DP-T1-E3?

SI7454DP-T1-E3 is rated for single-pulse avalanche energy E_AS = 31 mJ with L = 0.1 mH, and avalanche current I_AS = 25 A. These values are guaranteed under the test conditions defined in the Absolute Maximum Ratings table and reflect ruggedness against inductive switching transients in bridge and flyback topologies-critical for telecom and industrial applications.

Is SI7454DP-T1-E3 suitable for automotive applications?

Yes, SI7454DP-T1-E3 is qualified for 42 V automotive DC/DC applications per its product summary and application notes. It operates across -55 °C to +150 °C, meets AEC-Q101 stress test requirements (as documented in Vishay reliability reports for this family), and provides stable R_DS(on) and V_GS(th) over temperature-enabling reliable cold-cranking and load-dump performance in vehicle subsystems.

SI7454DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 34mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7454DP-T1-E3 FAQ

1.How can I place an order for SI7454DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7454DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7454DP-T1-E3 reliable?

The price and inventory of SI7454DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7454DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7454DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7454DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7454DP-T1-E3?

SI7454DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7454DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7454DP-T1-E3?

For technical support, including SI7454DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7454DP-T1-E3 requirements.

6.How does Aetrix verify that SI7454DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7454DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7454DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7454DP-T1-E3?

All SI7454DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7454DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7454DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7454DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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