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Vishay Siliconix SI7454DP-T1-GE3
- Part No.:
- SI7454DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7454DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 5A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,066
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Product details
Overview
SI7454DP-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 0.028 Ω (typ.) at VGS = 10 V and 7.8 A continuous drain current, optimized for high-density DC/DC primary-side switching in telecom/server 48 V full- and half-bridge topologies.
For engineers reviewing the SI7454DP-T1-GE3 datasheet, SI7454DP-T1-GE3 pinout, SI7454DP-T1-GE3 application, or SI7454DP-T1-GE3 equivalent, key selection criteria include its 24 nC total gate charge, 1.6 °C/W junction-to-case thermal resistance, PWM-optimized fast switching, 100 % Rg tested specification, and lead-free/halogen-free compliance per ordering code.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (2–4 V) and 0.5–2.2 Ω gate resistance support robust drive compatibility with standard 10 V logic-level controllers.
The device integrates a body diode with 0.8–1.2 V forward voltage at 4 A and exhibits 50–80 ns source-drain reverse recovery time, enabling efficient synchronous rectification and hard-switched bridge operation without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage for primary-side switch in 48 V bus systems with 2× transient margin. |
| RDS(on) @ VGS = 10 V | 0.028 Ω (typ.) - Enables <1.7 W conduction loss at 7.8 A, critical for high-efficiency telecom DC/DC converters. |
| Qg | 24 nC (typ.) - Supports >500 kHz PWM switching with moderate gate driver power requirements (e.g., TC4427). |
| ID (continuous) | 7.8 A @ TJ = 150 °C - Sustains rated load in compact layouts when mounted on 1" × 1" FR4 with adequate copper area. |
| RthJC | 1.6 °C/W (typ.) - Provides DPAK-equivalent thermal performance in SO-8 footprint, enabling direct thermal path to PCB ground plane. |
| VGS(th) | 2–4 V - Ensures reliable turn-on with 5 V or 3.3 V gate drivers while avoiding spurious conduction near 0 V. |
| Package | PowerPAK® SO-8 - Leadless, 5.15 mm × 6.15 mm footprint, 1.07 mm profile, with exposed drain pad for thermal and electrical connection. |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with 8 terminals arranged in standard SO-8 outline (5.15 mm × 6.15 mm), featuring an exposed bottom-side drain pad for enhanced thermal dissipation and low-inductance power routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals tied internally; provide low-inductance return path for high di/dt switching currents. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals + large bottom-side exposed drain pad; form primary high-current power path and thermal interface. |
| Gate (G) | Control input | Single gate terminal (Pin 1 not used as gate; actual gate is Pin 5 per top-view diagram); requires <2.2 Ω series resistance to damp ringing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 0.028 Ω RDS(on) at 10 V in SO-8 footprint-enables higher power density than planar MOSFETs in same package. |
| PowerPAK® SO-8 package | 1.07 mm height and exposed drain pad reduce RthJA to 21 °C/W (10 s) - allows 4.8 W power dissipation on minimal PCB area. |
| PWM-optimized switching | 24 nC Qg, 16 ns td(on), 20 ns tf - minimizes switching losses in 300–1000 kHz DC/DC converters. |
| 100 % Rg tested | Guarantees gate resistance between 0.5–2.2 Ω - ensures consistent gate drive timing and eliminates need for external gate resistor tuning. |
| Lead (Pb)-free & halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C - supports environmentally compliant industrial and telecom manufacturing. |
Applications
| Telecom DC/DC Primary Switch | Server 48 V Half-Bridge |
|---|---|
|
Use Scenario: High-efficiency isolated DC/DC converter in 48 V intermediate bus architecture for base station RF power amplifiers. IC Role / Device Role / Timing Role: Primary-side N-channel MOSFET in active-clamp forward or LLC resonant topology, switching at 300–600 kHz. Use Value: 0.028 Ω RDS(on) and 24 nC Qg reduce combined conduction and switching losses below 2.5 W at 7.8 A, enabling >95 % efficiency at full load. |
Use Scenario: High-current 48 V input to 12 V output half-bridge converter powering server CPU VRMs. IC Role / Device Role / Timing Role: High-side switch in synchronous half-bridge configuration, driven by bootstrap gate driver (e.g., IR2110). Use Value: 1.6 °C/W RthJC and exposed drain pad allow direct thermal coupling to inner-layer copper, maintaining TJ < 125 °C under 5 A RMS load. |
| Industrial 42 V Automotive DC/DC | High-Density Point-of-Load Converter |
|
Use Scenario: 42 V battery-fed buck converter supplying 5 V/3 A to automotive infotainment ECUs in start-stop systems. IC Role / Device Role / Timing Role: Main power switch operating in forced CCM mode with 500 kHz fixed-frequency PWM control. Use Value: VDS = 100 V provides 2.4× overvoltage margin against load-dump transients (ISO 7637-2 Pulse 5a), ensuring system reliability. |
Use Scenario: Compact 12 V input to 1.2 V/20 A point-of-load regulator on FPGA or ASIC power delivery network. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck stage, leveraging low RDS(on) and fast body diode recovery. Use Value: 0.8–1.2 V VSD and 50–80 ns trr minimize reverse recovery loss during dead-time, improving light-load efficiency by ≥3 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7450DP-T1-GE3 | RDS(on) = 0.042 Ω (typ.) at 10 V; Qg = 18 nC; same PowerPAK SO-8 package and pinout. | Slightly lower conduction loss penalty but reduced switching speed margin - better suited for <300 kHz designs where gate drive strength is limited. | Select when prioritizing lower gate charge over absolute minimum RDS(on); verify thermal margin at 7.8 A due to higher on-resistance. |
| IRF7470PBF | Standard SO-8 package (not PowerPAK); RDS(on) = 0.032 Ω (typ.); RthJC = 16 °C/W; larger 1.75 mm profile. | Higher thermal resistance limits power handling on same PCB area - requires larger copper pour or heatsink for equivalent thermal performance. | Choose only if legacy SO-8 land pattern must be reused without redesign; expect ~43 °C higher TJ at 2.7 W dissipation versus SI7454DP-T1-GE3. |
Compared with SI7454DP-T1-GE3, Si7450DP-T1-GE3 trades 14 mΩ higher RDS(on) for 6 nC lower Qg, while IRF7470PBF sacrifices thermal performance and package profile to maintain SO-8 compatibility - making SI7454DP-T1-GE3 optimal for space-constrained, high-efficiency 48–100 V switching where thermal management is critical.
Availability
SI7454DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom infrastructure, server power supplies, and industrial 42 V automotive DC/DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SI7454DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7454DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-frequency, high-density DC/DC conversion in telecom, server, and industrial power systems where thermal performance and small footprint are essential.
FAQ
What is the maximum continuous drain current rating for SI7454DP-T1-GE3 at 85 °C ambient temperature?
The SI7454DP-T1-GE3 supports 5.7 A continuous drain current at TA = 85 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating based on RthJA = 55 °C/W (steady state) and assumes proper PCB copper area per Vishay Application Note AN821. The device maintains safe operation up to TJ = 150 °C under these conditions.
Does SI7454DP-T1-GE3 require a heatsink when operating at 7.8 A continuous current?
No external heatsink is required for SI7454DP-T1-GE3 at 7.8 A if mounted on a 1" × 1" FR4 board with ≥0.3 in² of spreading copper on the drain layer, per Vishay's thermal characterization. Its PowerPAK® SO-8 package achieves RthJA = 21 °C/W (10 s) and 55 °C/W (steady state), allowing 4.8 W dissipation at TA = 25 °C - sufficient for typical 7.8 A operation with <1.7 W conduction loss.
Is SI7454DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SI7454DP-T1-GE3 uses the PowerPAK® SO-8 package with identical 5.15 mm × 6.15 mm footprint and pin assignment as standard SO-8, enabling drop-in replacement on existing layouts. However, its leadless construction exposes the drain pad on the bottom - requiring appropriate solder paste stencil design and reflow profile per Vishay document 73257.
What is the gate threshold voltage range for SI7454DP-T1-GE3, and how does it affect drive circuit design?
The SI7454DP-T1-GE3 has a gate threshold voltage (VGS(th)) range of 2–4 V at ID = 250 μA. This allows reliable turn-on with 5 V logic-level drivers while preventing unintended conduction from noise or leakage. For robust operation, gate drive should exceed 6 V to ensure full enhancement and minimize RDS(on) - verified by its 0.040 Ω max rating at VGS = 6 V.
Can SI7454DP-T1-GE3 be used in synchronous rectification applications?
Yes, SI7454DP-T1-GE3 is suitable for synchronous rectification due to its low 0.8–1.2 V body diode forward voltage (VSD) at 4 A and fast 50–80 ns reverse recovery time (trr). When used as a low-side switch in buck or half-bridge topologies, its integrated diode reduces dead-time losses and improves light-load efficiency - confirmed by Vishay's typical characteristics curves on page 3.
SI7454DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7454DP-T1-GE3 FAQ
1.How can I place an order for SI7454DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7454DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7454DP-T1-GE3 reliable?
The price and inventory of SI7454DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7454DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7454DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7454DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7454DP-T1-GE3?
SI7454DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7454DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7454DP-T1-GE3?
For technical support, including SI7454DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7454DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7454DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7454DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7454DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7454DP-T1-GE3?
All SI7454DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7454DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7454DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7454DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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