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Vishay Siliconix SI7455DP-T1-E3
- Part No.:
- SI7455DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7455DP-T1-E3.pdf
- Description:
- MOSFET P-CH 80V 28A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,603
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Product details
Overview
SI7455DP-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -80 V drain-source voltage, 0.025 Ω RDS(on) at VGS = -10 V, and -28 A continuous drain current (package-limited). It operates in high-side switching configurations for industrial power supplies and DC-DC converters.
For engineers reviewing the SI7455DP-T1-E3 datasheet, SI7455DP-T1-E3 pinout, SI7455DP-T1-E3 application, or SI7455DP-T1-E3 equivalent, key selection criteria include its PowerPAK SO-8 leadless package, -60 A pulsed drain rating, 65 nC total gate charge at -6 V drive, and -1.2 V body diode forward voltage at -8.4 A.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg/Qgd ratio. Its gate threshold voltage range of -2 V to -4 V ensures reliable turn-on under standard logic-level negative gate drive.
The device features a robust body diode with 60–90 ns reverse recovery time and 150–235 nC Qrr, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -80 V - Supports 48 V and 60 V bus systems with 20 % derating margin |
| RDS(on) | 0.025 Ω @ VGS = -10 V - Enables <1.5 W conduction loss at -10.5 A |
| ID (cont) | -28 A (TC = 25 °C) - Package-limited current handling in thermally anchored layouts |
| Qg | 65 nC @ VGS = -6 V - Compatible with standard -6 V gate drivers without excessive drive power |
| VSD | -1.2 V @ IS = -8.4 A - Low forward drop reduces freewheeling losses in high-current DC-DC stages |
| RthJC | 1.5 °C/W max - Allows >50 W steady-state dissipation with minimal heatsink interface resistance |
Pinout & Package
Package: PowerPAK SO-8 - leadless surface-mount package with exposed copper drain paddle on bottom side; 6.15 mm × 5.15 mm footprint; requires reflow-only assembly per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S (1,2,3) | Source | Common return node for channel current; tied to ground or low-side reference in high-side switch |
| G (4) | Gate | Control input requiring negative voltage relative to source to turn on; 4 Ω gate resistance limits ringing |
| D (5,6,7,8) | Drain | Main power output node; electrically connected to exposed copper paddle for thermal and current conduction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 25 % lower RDS(on) vs. planar P-channel MOSFETs at same voltage rating and die size |
| Halogen-free construction | Complies with IEC 61249-2-21; suitable for RoHS-compliant industrial and telecom equipment |
| Low Qgd/Qg ratio | 29/65 ≈ 0.45 - Improves hard-switching EMI behavior and reduces Miller-induced shoot-through risk |
| Body diode softness factor | ta/tb = 45/15 = 3 - Reduces voltage overshoot during diode commutation in synchronous rectifiers |
Applications
| High-Side Load Switch | Industrial DC-DC Converter |
|---|---|
Use Scenario: Remote-controlled 48 V power rail enable/disable in programmable logic controller backplanes. IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power delivery path; driven by isolated gate driver with -10 V swing. Use Value: 0.025 Ω RDS(on) limits voltage drop to <265 mV at 10.5 A, preserving downstream regulation margin. | Use Scenario: Synchronous rectifier in isolated 24 V → 5 V flyback converter for factory automation sensors. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; body diode conducts during dead time. Use Value: 60–90 ns trr and soft recovery minimize switching node ringing and reduce EMI filter burden. |
| Battery Protection Circuit | Motor Drive Half-Bridge |
Use Scenario: Reverse-polarity and overcurrent protection in 36 V lithium-ion battery packs for cordless tools. IC Role / Device Role / Timing Role: Back-to-back P-channel configuration for bidirectional blocking; gate driven by dedicated protection IC. Use Value: -80 V VDS withstands load dump transients up to 70 V, exceeding ISO 16750-2 requirements. | Use Scenario: Upper switch in 24 V brushed DC motor H-bridge for robotic joint actuators. IC Role / Device Role / Timing Role: High-side switch enabling PWM speed control; body diode handles inductive kickback during off-time. Use Value: -60 A IDM rating supports 3× stall current surges without avalanche failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | RDS(on) = 0.2 Ω @ -10 V; TO-220 package; 140 nC Qg | Higher conduction loss; requires heatsink; slower switching | Prefer for low-frequency, high-voltage linear regulation where thermal mass dominates |
| Si7461DP-T1-E3 | VDS = -60 V; RDS(on) = 0.018 Ω @ -10 V; identical PowerPAK SO-8 footprint | Lower voltage rating; better efficiency below 48 V; not suitable for 60 V bus | Choose when system maximum VIN ≤ 50 V and lowest possible RDS(on) is critical |
Compared with IRF9540NPBF and Si7461DP-T1-E3, the SI7455DP-T1-E3 delivers optimal balance of -80 V capability, 0.025 Ω on-resistance, and 65 nC gate charge in a compact leadless package-making it preferred for space-constrained 48 V industrial switching where both voltage headroom and switching efficiency matter.
Availability
SI7455DP-T1-E3 is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, and battery management systems requiring stable component supply and long-term manufacturability.
Supply support for SI7455DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si7455DP-T1-E3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered for high-efficiency, high-density DC-DC conversion and industrial switching applications demanding low RDS(on) and robust avalanche performance.
FAQ
What is the maximum continuous drain current rating for SI7455DP-T1-E3?
The SI7455DP-T1-E3 has a continuous drain current rating of -28 A at TC = 25 °C, limited by package thermal capacity-not silicon. At TC = 70 °C, the rating remains -28 A, but ambient-limited operation drops to -8.4 A at TA = 70 °C per FR4 board conditions. Derating curves confirm usable current above 20 A with moderate heatsinking.
Does SI7455DP-T1-E3 support gate drive from standard 0 V / -5 V logic?
Yes - the SI7455DP-T1-E3 has a gate threshold voltage range of -2 V to -4 V, making it fully compatible with -5 V logic-level gate drivers. Its RDS(on) of 0.029 Ω at VGS = -6 V ensures strong enhancement even with modest negative swing, and 65 nC Qg keeps driver power demand manageable.
Is SI7455DP-T1-E3 suitable for avalanche energy handling in inductive switching?
Yes - the SI7455DP-T1-E3 is rated for 101 mJ single-pulse avalanche energy (EAS) and -45 A avalanche current (IAS). These values are validated per JEDEC test methods and support reliable operation in relay-driving, solenoid-control, and flyback snubberless designs where unclamped inductive turn-off occurs.
What is the thermal resistance from junction to case for SI7455DP-T1-E3?
The SI7455DP-T1-E3 has a maximum junction-to-case (drain) thermal resistance (RthJC) of 1.5 °C/W under steady-state conditions. This low value reflects direct thermal coupling between the silicon die and the exposed copper drain paddle, enabling >50 W power dissipation with minimal temperature rise when mounted on a 2-oz copper thermal pad.
Can SI7455DP-T1-E3 be used in parallel configurations?
Yes - the SI7455DP-T1-E3 exhibits positive temperature coefficient for RDS(on), confirmed by normalized on-resistance vs. junction temperature curves. This inherent current-sharing behavior enables stable paralleling for higher current applications, provided layout symmetry and gate drive matching are maintained to avoid dynamic imbalance.
SI7455DP-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 155 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5160 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 83.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7455DP-T1-E3 FAQ
1.How can I place an order for SI7455DP-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7455DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7455DP-T1-E3 reliable?
The price and inventory of SI7455DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7455DP-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7455DP-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7455DP-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7455DP-T1-E3?
SI7455DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7455DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7455DP-T1-E3?
For technical support, including SI7455DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7455DP-T1-E3 requirements.
6.How does Aetrix verify that SI7455DP-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7455DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7455DP-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7455DP-T1-E3?
All SI7455DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7455DP-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7455DP-T1-E3 part is unused and in its original packaging.
Return procedure for SI7455DP-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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