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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7456CDP-T1-GE3

Name: SI7456CDP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7456CDP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7456CDP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7456CDP-T1-GE3.pdf

Description:: MOSFET N-CH 100V 27.5A PPAK SO-8

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Product details

Overview

SI7456CDP-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.0235 Ω at V_GS = 10 V, 27.5 A continuous drain current at T_C = 25 °C, and 7.7 nC total gate charge - optimized for DC/DC primary-side switching in telecom/server 48 V full/half-bridge converters.

For engineers reviewing the SI7456CDP-T1-GE3 datasheet, SI7456CDP-T1-GE3 pinout, SI7456CDP-T1-GE3 application, or SI7456CDP-T1-GE3 equivalent, key selection criteria include its 100 % UIS-tested ruggedness, halogen-free and RoHS-compliant construction, junction-to-case thermal resistance of 2.9 °C/W, and verified performance under pulsed avalanche conditions (E_AS = 11.2 mJ).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: C_iss = 730 pF, C_oss = 425 pF, and Cr_ss = 30 pF at V_DS = 50 V. Its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.8 V, enabling robust turn-on control with standard 4.5 V–10 V logic-level drive.

The device integrates a body diode with V_SD = 0.79–1.1 V at I_S = 4 A and t_rr = 34–68 ns, supporting synchronous rectification and hard-switched topologies. Thermal design leverages the exposed-drain PowerPAK® SO-8 footprint - identical to standard SO-8 but with direct die-to-PCB thermal path and 1.0 °C/W typical junction-to-foot resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V telecom/server DC/DC converters with 2× input margin.
R_DS(on)	0.0235 Ω @ V_GS = 10 V - enables <2.7 W conduction loss at 10 A, critical for high-efficiency power stages.
I_D (continuous)	27.5 A @ T_C = 25 °C - sustains high-current operation when mounted on thermally enhanced PCBs.
Q_g	7.7 nC @ V_GS = 4.5 V - ensures fast, low-drive-power switching compatible with standard PWM controllers.
R_thJC	2.9 °C/W (typ.) - allows >35 W power dissipation with minimal junction temperature rise when heatsinked.
E_AS	11.2 mJ - validated single-pulse avalanche energy supports reliable operation during transient overvoltage events.
t_r/t_f	13–26 ns / 9–20 ns - enables high-frequency operation (>500 kHz) with low switching losses.

Pinout & Package

SI7456CDP-T1-GE3 uses the leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm), featuring an exposed drain pad on the bottom for low-thermal-resistance PCB mounting. Pin numbering follows standard SO-8 orientation (pin 1 = source, pin 2 = source, pin 3 = source, pin 4 = gate, pin 5 = drain, pin 6 = drain, pin 7 = drain, pin 8 = drain), with all four drain terminals electrically common and thermally connected to the bottom pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Common source connection; pins 1–3 are internally bonded and must be routed to low-impedance ground plane.
4	Gate (G)	Control terminal; requires low-inductance gate driver trace and local 10 nF bypass capacitor near pin 4.
5, 6, 7, 8	Drain (D)	High-side power node; all four pins connect to the same internal drain structure and exposed bottom copper pad.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-frequency, high-efficiency switching.
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching stress without derating.
PowerPAK® SO-8 package	Provides DPAK-equivalent thermal performance (R_thJC = 2.9 °C/W) in SO-8 footprint for drop-in layout compatibility.
Halogen-free & RoHS compliant	Fulfills IEC 61249-2-21 and Directive 2002/95/EC requirements for environmentally sensitive applications.
Exposed drain thermal pad	Enables direct heat transfer from die to PCB copper, reducing junction-to-ambient thermal resistance by up to 50 % vs. standard SO-8.

Applications

Telecom/Server 48 V DC/DC Converters	Industrial Motor Drives
Use Scenario: Primary-side switch in isolated full-bridge or half-bridge DC/DC converters powering base station RF modules. IC Role / Device Role / Timing Role: High-side N-channel MOSFET handling 48 V input, switching at 200–500 kHz with synchronous rectification. Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 1 kW output.	Use Scenario: Half-bridge leg in 24–48 V BLDC motor inverters for HVAC blowers and industrial pumps. IC Role / Device Role / Timing Role: Fast-switching power stage element controlling phase current with PWM frequencies up to 30 kHz. Use Value: Robust UIS rating and low gate charge support reliable commutation under high dI/dt and inductive kickback.
DC/DC Primary Side Switch	Industrial Power Supplies
Use Scenario: Main switching transistor in non-isolated buck or buck-boost regulators for FPGA core voltage rails. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch operating with 4.5–10 V gate drive and tight duty-cycle control. Use Value: V_GS(th) range (1.2–2.8 V) ensures clean turn-on with logic-level drivers while avoiding shoot-through risk.	Use Scenario: Output rectification and regulation stage in programmable lab power supplies with 0–30 V, 0–10 A output. IC Role / Device Role / Timing Role: Low-loss pass element in linear-plus-switching hybrid architectures. Use Value: Body diode t_rr = 34–68 ns and Q_rr = 32–64 nC reduce reverse recovery losses during freewheeling.

Telecom/Server 48 V DC/DC Converters

Industrial Motor Drives

Use Scenario: Primary-side switch in isolated full-bridge or half-bridge DC/DC converters powering base station RF modules.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET handling 48 V input, switching at 200–500 kHz with synchronous rectification.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 1 kW output.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor inverters for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Fast-switching power stage element controlling phase current with PWM frequencies up to 30 kHz.

Use Value: Robust UIS rating and low gate charge support reliable commutation under high dI/dt and inductive kickback.

DC/DC Primary Side Switch

Industrial Power Supplies

Use Scenario: Main switching transistor in non-isolated buck or buck-boost regulators for FPGA core voltage rails.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch operating with 4.5–10 V gate drive and tight duty-cycle control.

Use Value: V_GS(th) range (1.2–2.8 V) ensures clean turn-on with logic-level drivers while avoiding shoot-through risk.

Use Scenario: Output rectification and regulation stage in programmable lab power supplies with 0–30 V, 0–10 A output.

IC Role / Device Role / Timing Role: Low-loss pass element in linear-plus-switching hybrid architectures.

Use Value: Body diode t_rr = 34–68 ns and Q_rr = 32–64 nC reduce reverse recovery losses during freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 0.044 Ω @ 10 V (87 % higher); TO-220 package; no UIS testing specified.	Larger footprint; higher thermal resistance (R_thJC = 1.5 °C/W but requires heatsink); unsuitable for dense SMT layouts.	Choose IRF540NPBF only if through-hole assembly and lower cost outweigh efficiency and board space constraints.
Si7446DP-T1-GE3	Same PowerPAK® SO-8 package; R_DS(on) = 0.0195 Ω @ 10 V (17 % lower); 30 A I_D; slightly higher Q_g (8.5 nC).	Higher current capability suits 1.2 kW+ designs; identical pinout and thermal interface enable direct layout reuse.	Select Si7446DP-T1-GE3 when peak efficiency or >27.5 A continuous current is required without changing PCB layout.

Compared with IRF540NPBF, SI7456CDP-T1-GE3 delivers superior power density and thermal performance in SMT form; versus Si7446DP-T1-GE3, it trades marginal R_DS(on) increase for tighter gate charge control and proven ruggedness in telecom-grade systems.

Availability

SI7456CDP-T1-GE3 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motor drives, and high-reliability DC/DC converter designs requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.

Supply support for SI7456CDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si7456CDP product line targets high-frequency, high-efficiency power conversion in space-constrained applications - engineered specifically for telecom, server, and industrial DC/DC primary-side switching where thermal management and ruggedness are critical.

FAQ

What is the maximum continuous drain current for SI7456CDP-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI7456CDP-T1-GE3 is 22 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction; actual usable current depends on PCB copper area, airflow, and ambient temperature. SI7456CDP-T1-GE3 maintains safe operation within this limit when mounted on ≥1 in² of 2-oz copper with thermal vias.

Does SI7456CDP-T1-GE3 support 4.5 V gate drive in practical applications?

Yes, SI7456CDP-T1-GE3 is fully characterized for 4.5 V gate drive: R_DS(on) = 0.0315 Ω and Q_g = 7.7 nC at V_GS = 4.5 V. Its V_GS(th) range (1.2–2.8 V) ensures reliable turn-on with 4.5 V logic, and the device is widely deployed in 5 V-controlled DC/DC converters. SI7456CDP-T1-GE3 exhibits no shoot-through risk due to its well-defined threshold behavior.

What is the significance of the "100 % UIS tested" specification for SI7456CDP-T1-GE3?

"100 % UIS tested" means every SI7456CDP-T1-GE3 unit undergoes unclamped inductive switching stress screening at rated current and voltage, verifying ability to absorb inductive energy without failure. This ensures robustness in real-world hard-switched topologies where voltage spikes exceed V_DS rating. SI7456CDP-T1-GE3's E_AS = 11.2 mJ is production-tested, not just guaranteed by design.

Can SI7456CDP-T1-GE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes - SI7456CDP-T1-GE3 uses the PowerPAK® SO-8 package with identical footprint and pinout to standard SO-8, enabling drop-in replacement. However, its exposed drain pad requires matching solder mask opening and thermal land pattern per Vishay AN821. SI7456CDP-T1-GE3 delivers superior thermal performance without PCB redesign, provided the drain pad is properly connected to copper.

What is the body diode reverse recovery performance of SI7456CDP-T1-GE3?

SI7456CDP-T1-GE3 features a fast, soft-recovery body diode with t_rr = 34–68 ns and Q_rr = 32–64 nC at I_F = 5 A, dI/dt = 100 A/µs, and T_J = 25 °C. This enables efficient synchronous rectification and reduces switching losses in hard-commutated circuits. SI7456CDP-T1-GE3's body diode is integral to its die structure and fully characterized in the datasheet.

SI7456CDP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 27.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 23.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 730 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 35.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7456CDP-T1-GE3 FAQ

1.How can I place an order for SI7456CDP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7456CDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7456CDP-T1-GE3 reliable?

The price and inventory of SI7456CDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7456CDP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7456CDP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7456CDP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7456CDP-T1-GE3?

SI7456CDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7456CDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7456CDP-T1-GE3?

For technical support, including SI7456CDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7456CDP-T1-GE3 requirements.

6.How does Aetrix verify that SI7456CDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7456CDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7456CDP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7456CDP-T1-GE3?

All SI7456CDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7456CDP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7456CDP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7456CDP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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