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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7456DP-T1-E3

Name: SI7456DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7456DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7456DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7456DP-T1-E3.pdf

Description:: MOSFET N-CH 100V 5.7A PPAK SO-8

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Product details

Overview

SI7456DP-T1-E3 from Vishay Siliconix is an N-channel 100-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.025 Ω at V_GS = 10 V and 9.3 A continuous drain current, optimized for high-density DC/DC primary-side switching in telecom/server 48 V full-/half-bridge topologies.

For engineers reviewing the SI7456DP-T1-E3 datasheet, SI7456DP-T1-E3 pinout, SI7456DP-T1-E3 application, or SI7456DP-T1-E3 equivalent, key selection factors include its 1.07 mm low-profile PowerPAK SO-8 thermal performance (R_thJC = 1.5 °C/W), PWM-optimized fast switching (Q_g = 36–44 nC), and 100 % R_g tested gate resistance (0.5–2.1 Ω).

Technical Context

This MOSFET employs trench-gate silicon technology with halogen-free construction per IEC 61249-2-21, supporting stable operation up to T_J = 150 °C. Its gate threshold voltage (V_GS(th) = 2–4 V) and low Q_gd/Q_gs ratio (8.6 nC / 10 nC) enable precise PWM control with minimized Miller effect.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 4.3 A and exhibits robust avalanche capability (E_AS = 45 mJ, I_AS = 30 A), making it suitable for hard-switched industrial and 42 V automotive power stages where unclamped inductive switching occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V telecom/server DC/DC converters with sufficient margin against transients.
R_DS(on) @ V_GS = 10 V	0.025 Ω - enables <2.2 W conduction loss at 9.3 A, critical for high-efficiency high-density power supplies.
I_D (continuous)	9.3 A @ T_A = 25 °C - defines maximum steady-state current handling on standard FR4 PCB without forced cooling.
Q_g	36–44 nC - determines gate drive power requirement and switching speed; lower Q_g reduces driver losses in high-frequency PWM.
R_thJC	1.5 °C/W (typ.) - provides direct thermal path from junction to exposed drain pad, enabling DPAK-equivalent cooling in SO-8 footprint.
E_AS	45 mJ - quantifies single-pulse avalanche energy tolerance, essential for reliability in inductive load switching applications.
V_GS(th)	2–4 V - ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers without requiring level-shifting.

Pinout & Package

SI7456DP-T1-E3 uses the PowerPAK® SO-8 package: 6.15 mm × 5.15 mm footprint, 1.07 mm profile, leadless construction with exposed drain pad on bottom side for enhanced thermal dissipation. Pin numbering follows standard SO-8 convention (pin 1 = gate, pins 2–4 = source, pins 5–8 = drain).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤20 V gate-source voltage; 100 % R_g tested for consistent switching behavior.
2, 3, 4	Source	Power return path; electrically tied internally; used for Kelvin sensing or low-inductance source routing.
5, 6, 7, 8	Drain	Main power output; exposed copper pad on bottom provides low-impedance thermal and electrical connection to PCB copper pour.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers industry-leading R_DS(on) × area efficiency, enabling higher current density than planar MOSFETs in same package.
PowerPAK® SO-8 package	Same footprint as standard SO-8 but with exposed drain pad and 1.07 mm height-enables DPAK-level thermal performance in space-constrained layouts.
PWM-optimized switching	Low Q_gd/Q_g ratio (≈20 %) minimizes Miller plateau duration, reducing switching transition time and associated losses.
100 % R_g tested	Guarantees gate resistance between 0.5–2.1 Ω, ensuring predictable gate drive timing and EMI behavior across production lots.
Halogen-free construction	Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment.

Applications

Telecom Server DC/DC Converter	Industrial Motor Drive Half-Bridge
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter operating at 250 kHz. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlling transformer primary current; switched by isolated gate driver with 10 V gate drive. Use Value: Low R_DS(on) (0.025 Ω) limits conduction loss to <2.2 W at 9.3 A, while fast switching (t_f = 26–50 ns) reduces transition losses in high-frequency operation.	Use Scenario: Upper switch in half-bridge driving 24 V BLDC motor with peak phase current of 8 A. IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch; body diode conducts reverse recovery during dead-time commutation. Use Value: V_SD = 0.8–1.2 V and t_rr = 50–80 ns minimize reverse recovery loss and EMI during freewheeling, improving system efficiency and noise margin.
Automotive 42 V System DC/DC	High-Density POL Module
Use Scenario: Step-down regulator converting 42 V battery rail to 5 V for infotainment ECUs in commercial vehicles. IC Role / Device Role / Timing Role: Main power switch subjected to load dump transients up to 60 V and repetitive avalanche stress. Use Value: 100 V V_DS rating and 45 mJ E_AS ensure reliable operation under automotive load dump conditions without external clamping.	Use Scenario: Point-of-load buck converter on server motherboard delivering 3.3 V/15 A with <1 mm height constraint. IC Role / Device Role / Timing Role: Compact, low-profile power switch mounted directly on dense multilayer PCB with internal ground/power planes. Use Value: 1.07 mm profile and R_thJA = 19 °C/W (10 s) allow thermal management within tight board space, avoiding need for heatsinks or airflow.

Telecom Server DC/DC Converter

Industrial Motor Drive Half-Bridge

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter operating at 250 kHz.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlling transformer primary current; switched by isolated gate driver with 10 V gate drive.

Use Value: Low R_DS(on) (0.025 Ω) limits conduction loss to <2.2 W at 9.3 A, while fast switching (t_f = 26–50 ns) reduces transition losses in high-frequency operation.

Use Scenario: Upper switch in half-bridge driving 24 V BLDC motor with peak phase current of 8 A.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch; body diode conducts reverse recovery during dead-time commutation.

Use Value: V_SD = 0.8–1.2 V and t_rr = 50–80 ns minimize reverse recovery loss and EMI during freewheeling, improving system efficiency and noise margin.

Automotive 42 V System DC/DC

High-Density POL Module

Use Scenario: Step-down regulator converting 42 V battery rail to 5 V for infotainment ECUs in commercial vehicles.

IC Role / Device Role / Timing Role: Main power switch subjected to load dump transients up to 60 V and repetitive avalanche stress.

Use Value: 100 V V_DS rating and 45 mJ E_AS ensure reliable operation under automotive load dump conditions without external clamping.

Use Scenario: Point-of-load buck converter on server motherboard delivering 3.3 V/15 A with <1 mm height constraint.

IC Role / Device Role / Timing Role: Compact, low-profile power switch mounted directly on dense multilayer PCB with internal ground/power planes.

Use Value: 1.07 mm profile and R_thJA = 19 °C/W (10 s) allow thermal management within tight board space, avoiding need for heatsinks or airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7461DP-T1-E3	R_DS(on) = 0.018 Ω @ 10 V (lower), ID = 12.5 A (higher), same PowerPAK SO-8 package and pinout.	Better conduction efficiency at higher currents; identical thermal and layout compatibility.	Select when >10 A continuous current or <2 W conduction loss is required without changing PCB layout.
IRF7470PBF	Standard SO-8 (not PowerPAK); R_DS(on) = 0.027 Ω @ 10 V; R_thJC = 3.0 °C/W (worse thermal performance).	Higher thermal resistance increases junction temperature rise by ~30 °C at same power, limiting usable current density.	Acceptable only if existing SO-8 land pattern must be reused and thermal derating is acceptable.

Compared with SI7456DP-T1-E3, Si7461DP-T1-E3 offers superior conduction performance in identical packaging, while IRF7470PBF trades thermal efficiency for legacy SO-8 compatibility-making SI7456DP-T1-E3 the optimal balance of low R_DS(on), proven PowerPAK thermal advantage, and drop-in replacement capability for SO-8 designs.

Availability

SI7456DP-T1-E3 is available at Aetrix Electronics and suitable for telecom server DC/DC converters, industrial motor drives, and automotive 42 V power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SI7456DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7456DP product line belongs to Vishay's TrenchFET® Power MOSFET family, engineered specifically for high-frequency, high-density power conversion in telecom, industrial, and automotive applications where thermal management and switching efficiency are critical.

FAQ

What is the maximum continuous drain current for SI7456DP-T1-E3 at 85 °C ambient temperature?

The SI7456DP-T1-E3 supports 6.7 A continuous drain current at T_A = 85 °C under steady-state conditions, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8 package on standard FR4 PCBs. At higher board temperatures or with limited copper area, further derating may be necessary to maintain T_J ≤ 150 °C. The SI7456DP-T1-E3 datasheet provides detailed thermal transient impedance curves to support precise thermal design.

Does SI7456DP-T1-E3 require a gate resistor for safe operation?

While the SI7456DP-T1-E3 does not mandate an external gate resistor for basic functionality, a series gate resistor (typically 2–10 Ω) is recommended to control dV/dt and dI/dt during switching, suppress ringing, and limit peak gate current from the driver. The SI7456DP-T1-E3's 100 % R_g tested specification (0.5–2.1 Ω) ensures consistent internal gate resistance, but external resistance remains essential for EMI control and driver protection in real-world layouts.

Can SI7456DP-T1-E3 be used in synchronous rectification applications?

Yes, the SI7456DP-T1-E3 can serve as a synchronous rectifier due to its low R_DS(on) (0.025 Ω) and integrated body diode with V_SD = 0.8–1.2 V at 4.3 A. However, its body diode reverse recovery time (t_rr = 50–80 ns) is not optimized for ultra-fast synchronous rectification like dedicated SR controllers demand. For best results, use SI7456DP-T1-E3 in moderate-frequency (<500 kHz) buck or forward converters where its conduction efficiency outweighs recovery trade-offs.

What is the gate threshold voltage range for SI7456DP-T1-E3, and how does it affect drive requirements?

The SI7456DP-T1-E3 has a gate threshold voltage (V_GS(th)) range of 2–4 V at I_D = 250 µA, meaning it begins conducting significantly above 2 V and fully enhances near 4 V. This allows reliable operation with 3.3 V or 5 V logic-level gate drivers without level-shifting, but full R_DS(on) performance requires V_GS ≥ 10 V. The SI7456DP-T1-E3's specified R_DS(on) values (0.025 Ω / 0.028 Ω) are guaranteed only at V_GS = 10 V and V_GS = 6 V respectively.

Is SI7456DP-T1-E3 compatible with lead-free reflow soldering processes?

Yes, SI7456DP-T1-E3 is explicitly qualified for lead-free reflow soldering, with a maximum peak temperature of 255 °C (±0 °C tolerance) for 30 seconds, per Vishay's documented Pb-free profile (www.vishay.com/doc?73257). The "-E3" suffix denotes lead-free and RoHS-compliant construction. Its PowerPAK SO-8 package meets JEDEC J-STD-020 moisture sensitivity level 1, eliminating bake requirements prior to assembly.

SI7456DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 5.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7456DP-T1-E3 FAQ

1.How can I place an order for SI7456DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7456DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7456DP-T1-E3 reliable?

The price and inventory of SI7456DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7456DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7456DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7456DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7456DP-T1-E3?

SI7456DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7456DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7456DP-T1-E3?

For technical support, including SI7456DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7456DP-T1-E3 requirements.

6.How does Aetrix verify that SI7456DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7456DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7456DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7456DP-T1-E3?

All SI7456DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7456DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7456DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7456DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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