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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7456DP-T1-GE3

Name: SI7456DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7456DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7456DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7456DP-T1-GE3.pdf

Description:: MOSFET N-CH 100V 5.7A PPAK SO-8

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Product details

Overview

SI7456DP-T1-GE3 from Vishay Siliconix is an N-channel 100-V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.025 Ω at V_GS = 10 V, 9.3 A continuous drain current, and optimized for fast-switching PWM applications in high-density DC/DC converters.

For engineers reviewing the SI7456DP-T1-GE3 datasheet, SI7456DP-T1-GE3 pinout, SI7456DP-T1-GE3 application, or SI7456DP-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, low thermal resistance (R_thJC = 1.5 °C/W), halogen-free and lead-free compliance, and suitability for telecom/server 48 V bridge topologies.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Q_g = 36–44 nC, Q_gd = 8.6 nC) supports efficient hard-switched and resonant converter operation up to several hundred kHz.

The device integrates a robust body diode (V_SD = 0.8–1.2 V at I_S = 4.3 A) with reverse recovery time t_rr = 50–80 ns, enabling reliable synchronous rectification and freewheeling in half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports primary-side switching in 48 V telecom/server DC/DC with ≥2× voltage margin against transients.
R_DS(on)	0.025 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 9.3 A, critical for thermally constrained PCB layouts.
I_D (continuous)	9.3 A @ T_J = 150 °C - Sustains full-load current in industrial and automotive 42 V systems with standard FR4 cooling.
Q_g	36–44 nC - Low gate drive energy reduces controller IC loading and enables efficient 300–500 kHz PWM operation.
R_thJC	1.5 °C/W (typ.) - Direct die-to-PCB thermal path via exposed drain pad enables DPAK-level cooling in SO-8 footprint.
t_r/t_f	10–20 ns / 26–50 ns - Fast edge rates minimize switching losses and EMI generation in high-frequency converters.
E_AS	45 mJ - Withstands single-pulse avalanche stress during inductive turn-off, enhancing system ruggedness.

Pinout & Package

SI7456DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height), compatible with standard SO-8 land patterns but featuring extended drain pads for enhanced thermal and current handling. The package exposes the drain copper on the bottom side for direct PCB thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Eight-terminal drain connection provides low-inductance, high-current return path and direct thermal interface to PCB copper.
3 (center)	Gate (G)	Single gate terminal located between source pins minimizes gate loop inductance and improves switching stability.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.025 Ω R_DS(on) at 100 V rating-unachievable with planar MOSFETs in same package.
PowerPAK® SO-8 package	Delivers DPAK-equivalent thermal performance (R_thJC = 1.5 °C/W) in SO-8 footprint, eliminating layout redesign.
PWM-optimized switching	Q_gd/Q_gs ratio of ~0.86 ensures clean Miller plateau transition and reduced shoot-through risk in bridge circuits.
100 % R_g tested	Guarantees gate resistance ≤ 2.1 Ω, ensuring consistent turn-on timing and driver compatibility across production lots.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU-qualified for automotive and industrial end-equipment.

Applications

Primary Side Switch for High Density DC/DC	Telecom/Server 48 V, Full-/Half-Bridge DC/DC
Use Scenario: Used as high-side switch in isolated forward or active-clamp forward converters delivering >100 W in <10 cm² board area. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from input bus to transformer primary; operates at 200–500 kHz with precise dead-time control. Use Value: Low R_DS(on) and fast switching minimize total power loss (<2.5 W at 9.3 A), enabling >95 % efficiency and passive cooling.	Use Scenario: Employed in full-bridge or phase-shifted full-bridge topologies for 48 V intermediate bus conversion in data center PSUs. IC Role / Device Role / Timing Role: One quadrant switch in symmetric bridge configuration; synchronized with complementary device using isolated gate drivers. Use Value: Robust avalanche rating (E_AS = 45 mJ) and low Q_gd ensure reliable operation under bus overvoltage and cross-conduction fault conditions.
Industrial and 42 V Automotive	High-Efficiency Synchronous Buck Regulator
Use Scenario: Controls power delivery in 24–42 V battery-fed motor drives, lighting ballasts, and ADAS power supplies. IC Role / Device Role / Timing Role: High-side switch in non-isolated buck or buck-boost regulators; driven by integrated or external gate driver with bootstrap supply. Use Value: Junction temperature range (−55 to +150 °C) and stable R_DS(on) vs. T_J enable operation in under-hood environments without derating.	Use Scenario: Paired with a low-side MOSFET (e.g., Si7862DP) in multiphase buck converters for FPGA or ASIC core voltage regulation. IC Role / Device Role / Timing Role: Upper switch conducting during duty cycle; body diode conducts during off-time until synchronous FET turns on. Use Value: Optimized V_SD (0.8–1.2 V) and t_rr (50–80 ns) minimize reverse recovery loss and enable tight dead-time control for >92 % efficiency at 12 V input.

Primary Side Switch for High Density DC/DC

Telecom/Server 48 V, Full-/Half-Bridge DC/DC

Use Scenario: Used as high-side switch in isolated forward or active-clamp forward converters delivering >100 W in <10 cm² board area.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from input bus to transformer primary; operates at 200–500 kHz with precise dead-time control.

Use Value: Low R_DS(on) and fast switching minimize total power loss (<2.5 W at 9.3 A), enabling >95 % efficiency and passive cooling.

Use Scenario: Employed in full-bridge or phase-shifted full-bridge topologies for 48 V intermediate bus conversion in data center PSUs.

IC Role / Device Role / Timing Role: One quadrant switch in symmetric bridge configuration; synchronized with complementary device using isolated gate drivers.

Use Value: Robust avalanche rating (E_AS = 45 mJ) and low Q_gd ensure reliable operation under bus overvoltage and cross-conduction fault conditions.

Industrial and 42 V Automotive

High-Efficiency Synchronous Buck Regulator

Use Scenario: Controls power delivery in 24–42 V battery-fed motor drives, lighting ballasts, and ADAS power supplies.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck or buck-boost regulators; driven by integrated or external gate driver with bootstrap supply.

Use Value: Junction temperature range (−55 to +150 °C) and stable R_DS(on) vs. T_J enable operation in under-hood environments without derating.

Use Scenario: Paired with a low-side MOSFET (e.g., Si7862DP) in multiphase buck converters for FPGA or ASIC core voltage regulation.

IC Role / Device Role / Timing Role: Upper switch conducting during duty cycle; body diode conducts during off-time until synchronous FET turns on.

Use Value: Optimized V_SD (0.8–1.2 V) and t_rr (50–80 ns) minimize reverse recovery loss and enable tight dead-time control for >92 % efficiency at 12 V input.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7450DP-T1-GE3	R_DS(on) = 0.032 Ω @ 10 V; lower ID (7.5 A); identical PowerPAK SO-8 package and pinout.	Suitable for lower-power 48 V DC/DC where thermal margin allows higher conduction loss.	Select when cost sensitivity outweighs 15 % R_DS(on) penalty and peak current remains <7.5 A.
IRF7470PBF	SO-8 package; R_DS(on) = 0.028 Ω @ 10 V; higher R_thJA (62 °C/W vs. 52 °C/W); not halogen-free.	Limited to lower ambient or forced-air cooled telecom applications due to inferior thermal performance.	Consider only if legacy SO-8 qualification exists and halogen-free compliance is not required.

Compared with SI7456DP-T1-GE3, Si7450DP-T1-GE3 trades conduction loss for lower cost in thermally relaxed designs, while IRF7470PBF offers similar R_DS(on) but lacks halogen-free certification and delivers 20 % higher junction temperature rise under identical PCB conditions.

Availability

SI7456DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom/server 48 V DC/DC, industrial motor control, and 42 V automotive power conversion requiring stable component supply and long-term lifecycle support.

Supply support for SI7456DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7456DP belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-density, high-efficiency DC/DC conversion in space-constrained telecom, server, and automotive applications.

FAQ

What is the maximum continuous drain current rating for SI7456DP-T1-GE3 at 85 °C ambient?

At T_A = 85 °C, the SI7456DP-T1-GE3 supports 6.7 A continuous drain current (I_D) under steady-state conditions with proper PCB copper area. This value is derived from thermal derating curves in the datasheet (Document 71603, Rev. F) and assumes mounting on a 1" × 1" FR4 board per standard test conditions.

Does SI7456DP-T1-GE3 have avalanche capability, and what is its rated single-pulse energy?

Yes, SI7456DP-T1-GE3 is rated for single-pulse avalanche with E_AS = 45 mJ at L = 0.1 mH. This specification is guaranteed per datasheet absolute maximum ratings and validated through production testing, making it suitable for inductive load switching where voltage overshoot may occur.

Is SI7456DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SI7456DP-T1-GE3 uses the PowerPAK® SO-8 package with identical footprint and pinout to standard SO-8 devices. Pin 1–4 are source, pin 5–8 are drain, and pin 3 (center) is gate-enabling drop-in replacement on existing SO-8 land patterns without layout changes.

What is the gate threshold voltage range for SI7456DP-T1-GE3, and how does it affect 5 V logic-level drive?

The gate threshold voltage V_GS(th) for SI7456DP-T1-GE3 is specified from 2 V to 4 V at I_D = 250 µA. While it will turn on with 5 V gate drive, full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) = 0.025 Ω; at 5 V, R_DS(on) rises significantly and is not characterized in the datasheet.

How does the thermal performance of SI7456DP-T1-GE3 compare to a standard SO-8 MOSFET?

SI7456DP-T1-GE3 achieves R_thJC = 1.5 °C/W (typ.), matching DPAK performance, versus ~16 °C/W for standard SO-8. On a 105 °C PCB, SI7456DP-T1-GE3 reaches only 107 °C junction temperature at 2.7 W dissipation-versus 148 °C for standard SO-8-directly preserving R_DS(on) and reliability.

SI7456DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 5.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7456DP-T1-GE3 FAQ

1.How can I place an order for SI7456DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7456DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7456DP-T1-GE3 reliable?

The price and inventory of SI7456DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7456DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7456DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7456DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7456DP-T1-GE3?

SI7456DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7456DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7456DP-T1-GE3?

For technical support, including SI7456DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7456DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7456DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7456DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7456DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7456DP-T1-GE3?

All SI7456DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7456DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7456DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7456DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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