Vishay Siliconix SI7457DP-T1-E3

Overview

SI7457DP-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET rated for -100 V drain-source voltage, 0.042 Ω R_DS(on) at V_GS = -10 V, and -28 A continuous drain current (T_C = 25 °C). It operates as a high-side load switch or reverse polarity protection device in industrial power supplies and DC-DC converters.

For engineers reviewing the SI7457DP-T1-E3 datasheet, SI7457DP-T1-E3 pinout, SI7457DP-T1-E3 application, or SI7457DP-T1-E3 equivalent, key selection criteria include its -100 V V_DS, low gate charge (67 nC at V_GS = -6 V), PowerPAK SO-8 package thermal performance (R_thJC = 1.2 °C/W), and guaranteed -4 V V_GS(th) maximum for robust gate drive margin in 12–24 V systems.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance with high breakdown voltage. Its negative threshold voltage (-2 to -4 V) enables direct logic-level control from microcontrollers or dedicated gate drivers without level-shifting. The device supports avalanche energy rating of 80 mJ and pulsed drain current up to -35 A.

The PowerPAK SO-8 package features an exposed drain pad on the bottom surface, delivering junction-to-case thermal resistance of 1.2 °C/W - matching DPAK performance while maintaining SO-8 footprint compatibility. Gate charge parameters (Q_g = 67 nC @ V_GS = -6 V, Q_gd = 44 nC) support efficient high-frequency switching in synchronous buck or OR-ing applications.

Key Specifications

Pinout & Package

SI7457DP-T1-E3 is housed in a leadless PowerPAK SO-8 package (5.15 mm × 6.15 mm × 1.04 mm), featuring an exposed drain pad on the bottom surface for optimal thermal conduction. The top-side pinout matches standard SO-8: pins 1–4 are source terminals, pin 5 is gate, and pins 6–8 are drain terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF9540NPbF, SI7457DP-T1-E3 delivers 5× lower R_DS(on) and 70 % smaller footprint; versus Si7461DP-T1-E3, it trades 40 V lower voltage rating for 67 % higher V_DS margin - making SI7457DP-T1-E3 optimal for 48–80 V industrial bus protection where transient immunity is critical.

Availability

SI7457DP-T1-E3 is available at Aetrix Electronics and suitable for industrial power supply protection, automotive reverse polarity guarding, and telecom DC-DC converter high-side switching requiring stable component supply and long-term production continuity.

Supply support for SI7457DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The Si7457DP product line is engineered for high-reliability industrial and automotive power switching, emphasizing rugged avalanche capability, low R_DS(on) at high voltage, and thermally optimized packaging for compact, high-efficiency designs.

FAQ

What is the maximum continuous drain current for SI7457DP-T1-E3 at 70 °C case temperature?

The maximum continuous drain current for SI7457DP-T1-E3 is -25.2 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8 package under sustained power dissipation. At ambient conditions, the current is further limited by R_thJA = 24 °C/W and maximum junction temperature of 150 °C. SI7457DP-T1-E3 must be mounted on adequate copper area to sustain this current reliably.

Does SI7457DP-T1-E3 support gate drive from a 3.3 V microcontroller?

Yes, SI7457DP-T1-E3 has a guaranteed maximum gate threshold voltage of -4 V and typical R_DS(on) of 0.045 Ω at V_GS = -6 V, enabling full enhancement with 3.3 V logic-level signals when used with appropriate pull-up configuration. However, for lowest R_DS(on) and highest efficiency, -10 V gate drive is recommended. SI7457DP-T1-E3 gate leakage remains below ±100 nA, ensuring minimal quiescent current draw from the controller.

What is the thermal resistance from junction to ambient for SI7457DP-T1-E3 on a standard FR4 board?

The typical junction-to-ambient thermal resistance (R_thJA) for SI7457DP-T1-E3 is 19 °C/W and maximum is 24 °C/W when mounted on a 1" × 1" FR4 board per the datasheet test condition. This value assumes standard soldering and no additional copper spreading. Adding ≥0.3 in² of drain-side copper can reduce R_thJA to ~12–15 °C/W. SI7457DP-T1-E3 benefits significantly from thermal vias under the exposed drain pad to inner ground planes.

Is SI7457DP-T1-E3 suitable for avalanche energy handling in inductive load switching?

Yes, SI7457DP-T1-E3 is fully rated for single-pulse avalanche with E_AS = 80 mJ at T_J = 25 °C, verified per JEDEC JESD24-1. This makes it suitable for driving relays, solenoids, and small motors where inductive kickback occurs. The device's -100 V V_DS rating provides margin above typical 48 V or 60 V bus voltages. SI7457DP-T1-E3 should not be used for repetitive avalanche unless validated per application-specific stress testing.

How does the PowerPAK SO-8 package of SI7457DP-T1-E3 compare to standard SO-8 in thermal performance?

The PowerPAK SO-8 package of SI7457DP-T1-E3 delivers R_thJC = 1.2 °C/W - identical to DPAK and 13× better than standard SO-8 (16 °C/W). Its exposed drain pad enables direct thermal coupling to PCB copper, reducing junction temperature rise by ~40 °C versus standard SO-8 under identical 2.7 W dissipation. SI7457DP-T1-E3 maintains SO-8 pinout and footprint, allowing direct replacement without layout changes while dramatically improving thermal headroom.