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Vishay Siliconix SI7457DP-T1-GE3
- Part No.:
- SI7457DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7457DP-T1-GE3.pdf
- Description:
- MOSFET P-CH 100V 28A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,606
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Product details
Overview
SI7457DP-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET rated for -100 V drain-source voltage, 0.042 Ω RDS(on) at VGS = -10 V, -28 A continuous drain current (TC = 25 °C), and 67 nC total gate charge. It operates in high-side switching configurations for industrial power supplies and DC-DC converters requiring robust avalanche capability and low conduction loss.
For engineers reviewing the SI7457DP-T1-GE3 datasheet, SI7457DP-T1-GE3 pinout, SI7457DP-T1-GE3 application, or SI7457DP-T1-GE3 equivalent, key selection criteria include its PowerPAK SO-8 leadless package thermal performance (RthJC = 1.2 °C/W), -100 V blocking rating, body diode recovery characteristics (trr = 60–90 ns), and halogen-free compliance per IEC 61249-2-21.
Technical Context
This device uses TrenchFET® technology to achieve low RDS(on) with stable threshold voltage (-2 to -4 V) and high transconductance (30 S). Its gate charge profile supports efficient switching in hard-switched topologies up to several hundred kHz, with Qgd/Qgs ratio of ~2.1 enabling predictable turn-off timing control.
The PowerPAK SO-8 package provides direct die-to-PCB thermal path via exposed drain pad, delivering DPAK-equivalent junction-to-case thermal resistance (1.2 °C/W) while maintaining SO-8 footprint compatibility. Body diode forward voltage is -0.8 to -1.2 V at -6.3 A, supporting synchronous rectification and freewheeling in buck and flyback converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Maximum reverse-blocking capability for high-side switch in 48 V and 100 V bus systems |
| RDS(on) | 0.042 Ω @ VGS = -10 V - Enables <1.5 W conduction loss at 6 A, critical for thermally constrained PCB layouts |
| ID (continuous) | -28 A @ TC = 25 °C - Package-limited current handling suitable for high-current load switches and OR-ing circuits |
| Qg | 67 nC @ VGS = -6 V - Low gate drive energy requirement compatible with standard logic-level gate drivers |
| EAS | 80 mJ - Single-pulse avalanche energy rating ensures reliability during inductive load switching transients |
| RthJC | 1.2 °C/W - Junction-to-case thermal resistance enables direct heatsinking through PCB copper, reducing thermal derating |
| trr | 60–90 ns - Fast body diode recovery minimizes switching losses and voltage overshoot in non-synchronous topologies |
Pinout & Package
SI7457DP-T1-GE3 is housed in a leadless PowerPAK SO-8 package (5.15 mm × 6.15 mm), featuring an exposed drain pad on the bottom surface for enhanced thermal conduction. The top-side pinout matches standard SO-8 footprints, enabling drop-in replacement in existing layouts without redesign.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection for P-channel operation; electrically tied to internal substrate and exposed drain pad ground reference |
| 5, 6, 7, 8 | Drain | High-current output terminal; connected to large bottom-side copper pad for thermal and electrical conduction to PCB |
| G (Pin 3) | Gate | Control input referenced to source; requires negative VGS for turn-on; gate resistance 4.1 Ω limits ringing in high-dV/dt environments |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 30% lower RDS(on) vs. planar P-channel MOSFETs at same voltage rating, improving efficiency in high-side switch applications |
| PowerPAK SO-8 package | Provides DPAK-level thermal performance (RthJC = 1.2 °C/W) in SO-8 footprint, eliminating need for larger packages or external heatsinks |
| Halogen-free construction | Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated industrial end equipment |
| Robust avalanche rating | 80 mJ single-pulse EAS ensures reliable operation under inductive switching stress without external snubbers |
| Low Qgd/Qgs ratio | ~2.1 ratio improves controllability during Miller plateau transition, reducing risk of shoot-through in half-bridge configurations |
Applications
| Industrial Power Supply | Telecom DC-DC Converter |
|---|---|
|
Use Scenario: High-side main switch in isolated forward or active-clamp forward converter operating from 48 V input bus. IC Role / Device Role / Timing Role: Primary power switch controlling energy transfer to transformer primary; duty cycle modulated by PWM controller. Use Value: -100 V VDS margin accommodates reflected voltage spikes; 0.042 Ω RDS(on) reduces conduction loss at full load, improving overall efficiency by >0.8%. |
Use Scenario: Synchronous rectifier driver in secondary-side LLC resonant converter for 12 V/20 A telecom output stage. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch replacing Schottky diode; driven by gate driver with precise dead-time control. Use Value: Fast body diode recovery (trr = 60–90 ns) minimizes reverse recovery loss; low Qg enables clean switching at 300–500 kHz. |
| OR-ing Circuit | Motor Drive Protection |
|
Use Scenario: Back-to-back P-channel configuration for redundant 24 V power rail OR-ing in industrial PLC backplanes. IC Role / Device Role / Timing Role: Unidirectional current valve preventing reverse current flow between parallel power sources; controlled by ideal diode controller. Use Value: -28 A continuous rating supports >20 A system current; low RDS(on) limits voltage drop to <1.2 V at 20 A, reducing heat generation and improving fault tolerance. |
Use Scenario: High-side brake switch in 24 V brushed DC motor control module for factory automation actuators. IC Role / Device Role / Timing Role: Controlled short-circuit path across motor terminals during dynamic braking; activated only during deceleration phase. Use Value: 80 mJ EAS withstands energy dissipation during rapid motor current decay; -100 V rating covers L×di/dt transients up to 75 V peak. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7450DP-T1-GE3 | -100 V VDS, 0.052 Ω RDS(on) @ -10 V, 52 nC Qg, same PowerPAK SO-8 package | Higher RDS(on) increases conduction loss but lower Qg improves switching efficiency at higher frequencies | Select when prioritizing gate drive simplicity and >300 kHz operation over minimal conduction loss |
| IRF9540NPBF | -100 V VDS, 0.2 Ω RDS(on) @ -10 V, TO-220 package, 60 nC Qg | Larger thermal resistance (RthJC = 1.5 °C/W) and through-hole mounting require heatsink and board real estate | Choose only if legacy TO-220 layout exists and thermal budget allows >3× higher conduction loss |
Compared with Si7450DP-T1-GE3, SI7457DP-T1-GE3 delivers 19% lower RDS(on) for reduced steady-state loss in high-current rails; versus IRF9540NPBF, it offers 4× lower RDS(on) and superior thermal integration via PowerPAK SO-8, enabling compact, heatsink-free designs.
Availability
SI7457DP-T1-GE3 is available at Aetrix Electronics and suitable for industrial power supplies, telecom DC-DC converters, OR-ing circuits, and motor drive protection requiring stable component supply and long-term production continuity.
Supply support for SI7457DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.
The Si7457DP belongs to Vishay's TrenchFET® PowerPAK SO-8 P-channel MOSFET family, engineered for high-efficiency, high-reliability high-side switching in space-constrained power systems where thermal management and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for SI7457DP-T1-GE3 at 70 °C case temperature?
The SI7457DP-T1-GE3 supports -25.2 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK SO-8 package under sustained power dissipation and must be validated against actual board-level thermal conditions using RthJC = 1.2 °C/W and ambient temperature constraints. SI7457DP-T1-GE3 maintains this rating without requiring external heatsinking when mounted on ≥1 in² of 2-oz copper.
Does SI7457DP-T1-GE3 support gate drive from standard 5 V microcontrollers?
No - SI7457DP-T1-GE3 has a gate threshold voltage range of -2 V to -4 V and requires a negative gate-source voltage for full enhancement. Driving it directly from a 5 V MCU GPIO is not functional; a dedicated P-channel gate driver (e.g., TC4427 configured for high-side operation) or level-shifting circuit generating -10 V relative to source is required. SI7457DP-T1-GE3 is not logic-level compatible and will not achieve specified RDS(on) with 0 V or +5 V gate drive.
Can SI7457DP-T1-GE3 replace a standard SO-8 P-channel MOSFET without PCB layout changes?
Yes - SI7457DP-T1-GE3 uses the PowerPAK SO-8 package with identical 5.15 mm × 6.15 mm outline and pin-to-pin mapping to standard SO-8, allowing direct substitution on existing land patterns. However, optimal thermal performance requires extending the drain pad copper area beyond the minimum SO-8 footprint; the device's exposed drain pad conducts heat into the PCB, so maximizing copper area improves junction temperature by up to 40 °C compared to standard SO-8 mounting. SI7457DP-T1-GE3 achieves this without changing component placement or routing.
What is the body diode forward voltage of SI7457DP-T1-GE3 at -6.3 A?
The body diode forward voltage (VSD) of SI7457DP-T1-GE3 is -0.8 V to -1.2 V at -6.3 A and TJ = 25 °C, as specified in the Drain-Source Body Diode Characteristics section. This voltage defines conduction loss during freewheeling intervals in non-synchronous topologies and impacts efficiency in buck-derived converters. SI7457DP-T1-GE3 exhibits lower VSD than many competing P-channel MOSFETs due to optimized body diode doping and geometry, reducing associated power loss by ~15% at nominal load.
Is SI7457DP-T1-GE3 suitable for avalanche-rated applications such as inductive load switching?
Yes - SI7457DP-T1-GE3 is fully characterized for single-pulse avalanche operation with EAS = 80 mJ at TJ = 25 °C and IAS = -40 A, making it suitable for applications involving relay driving, solenoid control, and motor commutation where inductive kickback must be safely clamped. The device's avalanche ruggedness is guaranteed by design and validated per JEDEC standards; SI7457DP-T1-GE3 does not require external snubbers in properly designed circuits meeting the specified L×di/dt limits.
SI7457DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 160 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5230 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 83.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7457DP-T1-GE3 FAQ
1.How can I place an order for SI7457DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7457DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7457DP-T1-GE3 reliable?
The price and inventory of SI7457DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7457DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7457DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7457DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7457DP-T1-GE3?
SI7457DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7457DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7457DP-T1-GE3?
For technical support, including SI7457DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7457DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7457DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7457DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7457DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7457DP-T1-GE3?
All SI7457DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7457DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7457DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7457DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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