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Vishay Siliconix SI7460DP-T1-E3
- Part No.:
- SI7460DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7460DP-T1-E3.pdf
- Description:
- MOSFET N-CH 60V 11A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,188
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Product details
Overview
SI7460DP-T1-E3 from Vishay Siliconix is an N-channel 60-V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 9.6 mΩ at VGS = 10 V and 12 mΩ at VGS = 4.5 V, with continuous drain current up to 18 A at TA = 25 °C. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters for telecom and industrial power supplies.
For engineers reviewing the SI7460DP-T1-E3 datasheet, SI7460DP-T1-E3 pinout, SI7460DP-T1-E3 application, or SI7460DP-T1-E3 equivalent, key selection criteria include its low thermal resistance (RthJC = 1.0 °C/W), lead-free halogen-free construction, fast switching performance (Qg = 65–100 nC), and compatibility with standard SO-8 PCB footprints.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in high-frequency power conversion. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 3.0 V, enabling robust 4.5-V logic-level drive capability while maintaining low leakage (IDSS ≤ 1 µA at VDS = 60 V).
The PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for direct thermal conduction, achieving RthJA = 18 °C/W (t ≤ 10 s) and RthJC = 1.0 °C/W (steady state). Its 1.07-mm profile supports space-constrained board layouts without sacrificing thermal performance relative to DPAK packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; suitable for 48-V input systems and 24-V industrial rails. |
| RDS(on) @ VGS = 10 V | 9.6 mΩ - Enables <1.7 W conduction loss at 18 A, critical for high-efficiency 500-kHz+ buck converters. |
| RDS(on) @ VGS = 4.5 V | 12 mΩ - Ensures full enhancement with 5-V microcontroller GPIO or PWM controller outputs. |
| ID (continuous, TA = 25 °C) | 18 A - Supports high-current point-of-load regulation without external heatsinking on 1" × 1" FR4. |
| Qg (total gate charge) | 65–100 nC - Determines driver strength requirement; enables efficient 1-MHz switching with moderate gate drivers. |
| RthJC | 1.0 °C/W - Allows direct thermal path from die to PCB copper, matching DPAK thermal performance in SO-8 footprint. |
| VGS(th) | 1.0–3.0 V - Guarantees turn-on margin across temperature and process variation for reliable logic-level operation. |
Pinout & Package
SI7460DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm × 1.07 mm), featuring exposed drain pads on the bottom side for enhanced thermal dissipation. The top-side pinout matches standard SO-8 layout for drop-in replacement compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5 | Gate (G) | Single gate input with low input capacitance (Ciss = ~2000 pF at VDS = 30 V); requires <6 Ω gate resistor for optimal switching. |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to bottom-exposed copper pad; primary thermal and current path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon architecture | Delivers industry-leading RDS(on) × Qg figure of merit (FOM) for high-frequency efficiency in synchronous buck stages. |
| PowerPAK® SO-8 package | Enables DPAK-equivalent thermal performance (RthJC = 1.0 °C/W) in SO-8 footprint-no PCB redesign needed. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21; suitable for automotive and industrial end equipment. |
| Low-profile 1.07 mm height | Supports ultra-thin power modules and stacked PCB assemblies where Z-height is constrained to <1.2 mm. |
| Enhanced avalanche ruggedness | Rated for 50 A single-pulse avalanche current and 125 mJ energy-tolerates inductive switching transients in motor drives. |
Applications
| Telecom DC-DC Converters | Industrial Motor Drives |
|---|---|
|
Use Scenario: Primary-side synchronous rectifier in isolated 48-V to 12-V half-bridge DC-DC converters for base station power modules. IC Role / Device Role / Timing Role: Low-side switch operating at 300–500 kHz with 5-V gate drive; handles peak currents up to 20 A. Use Value: 9.6-mΩ RDS(on) reduces conduction loss by >35% vs. legacy SO-8 MOSFETs, improving system efficiency from 92% to 94.5% at full load. |
Use Scenario: High-side switch in three-phase inverter half-bridges for 24-V brushless DC motor control in factory automation. IC Role / Device Role / Timing Role: Fast-switching N-channel driver with integrated bootstrap gate drive; operates with 4.5-V logic-compatible input. Use Value: 12-mΩ RDS(on) at 4.5 V ensures full enhancement under brownout conditions, preventing shoot-through during undervoltage events. |
| Server VRMs | LED Driver Power Stages |
|
Use Scenario: High-current power stage in 12-V input, 0.8-V output multiphase buck converters for CPU/GPU voltage regulation. IC Role / Device Role / Timing Role: Synchronous rectifier conducting up to 18 A DC with sub-30-ns fall time (tf = 30–45 ns). Use Value: 1.0 °C/W RthJC allows junction temperature rise of only ~2 °C above PCB temperature at 2.7 W dissipation-enabling stable operation at 105 °C board ambient. |
Use Scenario: Constant-current switch in high-brightness LED string drivers for architectural lighting with 36-V bus input. IC Role / Device Role / Timing Role: PWM-controlled main switch operating at 100–200 kHz; conducts 16 A pulsed current with low VSD body diode conduction. Use Value: 0.72–1.2 V forward voltage (VSD) at 4.3 A minimizes reverse-recovery losses during freewheeling, reducing thermal stress on LED strings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7450DP-T1-E3 | RDS(on) = 7.5 mΩ @ 10 V (lower), but higher Qg = 115 nC; same PowerPAK SO-8 package and pinout. | Better conduction loss at high current, but demands stronger gate driver for same switching speed. | Select when minimizing I²R loss dominates over gate drive complexity and cost. |
| IRF7470PBF | Standard SO-8 package (not PowerPAK); RDS(on) = 11 mΩ @ 10 V; RthJC = 16 °C/W (significantly higher thermal resistance). | Compatible footprint but inferior thermal performance-requires larger copper area or heatsink for same power handling. | Select only for legacy designs where PowerPAK reflow profile or bottom-side thermal management cannot be implemented. |
Compared with SI7460DP-T1-E3, Si7450DP-T1-E3 offers lower RDS(on) at the expense of higher gate charge, while IRF7470PBF provides pin-compatible SO-8 fit but sacrifices >15× worse junction-to-case thermal resistance-limiting usable current density in compact layouts.
Availability
SI7460DP-T1-E3 is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, server VRMs, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for SI7460DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The Si7460DP product line delivers high-current, low-RDS(on) TrenchFET® MOSFETs in advanced PowerPAK® packages for next-generation DC-DC conversion, motor control, and LED lighting applications.
FAQ
What is the maximum continuous drain current rating for SI7460DP-T1-E3 at 70 °C ambient temperature?
The SI7460DP-T1-E3 supports 14 A continuous drain current at TA = 70 °C (steady-state, with proper PCB copper area). This derating reflects thermal limits imposed by RthJA = 52 °C/W under standard mounting conditions on 1" × 1" FR4 board. At higher board temperatures, further derating is required per the Safe Operating Area curve in the datasheet.
Does SI7460DP-T1-E3 require special soldering profiles due to its PowerPAK® SO-8 package?
Yes, SI7460DP-T1-E3 requires lead-free reflow profiling per Vishay document 73257: peak temperature of 255 °C ± 0 °C for 30 seconds, with time above 217 °C limited to 60–150 seconds. Manual soldering with iron is not recommended due to the leadless construction and exposed bottom-side copper.
Can SI7460DP-T1-E3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?
Yes, SI7460DP-T1-E3 uses the identical SO-8 footprint and pinout (1–4 = S, 5 = G, 6–8 = D), enabling drop-in replacement. However, its bottom-side exposed drain pad requires matching copper land pattern per Application Note AN826 to achieve rated thermal performance-standard SO-8 pads will yield reduced current capability.
What is the typical gate threshold voltage range for SI7460DP-T1-E3, and how does it affect 5-V logic drive?
The SI7460DP-T1-E3 has VGS(th) = 1.0–3.0 V (min to max), ensuring full enhancement at VGS = 4.5 V or 5 V across temperature and process variation. This guarantees reliable turn-on even with marginal gate drive margins, making it suitable for direct connection to 5-V microcontrollers without level-shifting.
How does the avalanche energy rating of SI7460DP-T1-E3 impact its use in inductive switching circuits?
The SI7460DP-T1-E3 is rated for 125 mJ single-pulse avalanche energy (EAS) and 50 A avalanche current (IAS). This enables robust operation in flyback, boost, and motor drive circuits where inductive kickback may exceed VDS rating-eliminating need for external clamping diodes in many medium-power applications.
SI7460DP-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.6mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7460DP-T1-E3 FAQ
1.How can I place an order for SI7460DP-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7460DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7460DP-T1-E3 reliable?
The price and inventory of SI7460DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7460DP-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7460DP-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7460DP-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7460DP-T1-E3?
SI7460DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7460DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7460DP-T1-E3?
For technical support, including SI7460DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7460DP-T1-E3 requirements.
6.How does Aetrix verify that SI7460DP-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7460DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7460DP-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7460DP-T1-E3?
All SI7460DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7460DP-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7460DP-T1-E3 part is unused and in its original packaging.
Return procedure for SI7460DP-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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