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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7460DP-T1-GE3

Name: SI7460DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7460DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7460DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7460DP-T1-GE3.pdf

Description:: MOSFET N-CH 60V 11A PPAK SO-8

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Product details

Overview

SI7460DP-T1-GE3 from Vishay Siliconix is an N-channel 60-V (D-S) TrenchFET® Power MOSFET in a halogen-free, lead-free PowerPAK® SO-8 package. It delivers R_DS(on) = 9.6 mΩ at V_GS = 10 V and 12 mΩ at V_GS = 4.5 V, supports 18 A continuous drain current (T_J = 150 °C), and features low thermal resistance (R_thJC = 1.0 °C/W) for high-efficiency DC-DC power conversion in server VRMs.

For engineers reviewing the SI7460DP-T1-GE3 datasheet, SI7460DP-T1-GE3 pinout, SI7460DP-T1-GE3 application, or SI7460DP-T1-GE3 equivalent, key selection criteria include its 60-V V_DS, fast switching capability (Q_g = 65–100 nC), low-profile 1.07 mm PowerPAK SO-8 footprint, integrated body diode performance (V_SD = 0.72–1.2 V), and thermal robustness on FR4 PCBs.

Technical Context

This MOSFET employs Vishay's TrenchFET® silicon process optimized for low R_DS(on) and fast switching. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drive, while its dynamic parameters - including Q_gd = 16 nC and t_f = 30–45 ns - support high-frequency synchronous buck operation up to 1 MHz.

The PowerPAK SO-8 package uses a leadless construction with exposed copper drain pads on the bottom side, delivering DPAK-equivalent thermal performance (R_thJC = 1.0 °C/W) in an SO-8 footprint. Its 6.15 mm × 5.15 mm outline and 1.07 mm height enable space-constrained board layouts without sacrificing thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage suitable for 48 V input bus and 12 V output VRM stages.
R_DS(on) @ 10 V	9.6 mΩ - Enables <1.7 W conduction loss at 18 A, critical for high-current CPU/GPU power delivery.
R_DS(on) @ 4.5 V	12 mΩ - Ensures reliable turn-on with standard 5 V gate drivers and logic-level controllers.
I_D (continuous)	18 A @ T_J = 150 °C - Supports high-current single-phase or paralleled multi-phase power stages.
Q_g	65–100 nC - Determines gate drive power requirement and switching loss at high frequencies.
R_thJC	1.0 °C/W - Enables direct thermal coupling to PCB copper, reducing junction temperature rise by ~40 °C vs. standard SO-8.
V_GS(th)	1.0–3.0 V - Guarantees enhancement-mode operation and compatibility with PWM controller gate outputs.

Pinout & Package

SI7460DP-T1-GE3 is housed in a surface-mount PowerPAK® SO-8 package (6.15 mm × 5.15 mm × 1.07 mm), featuring a leadless design with exposed drain terminals on the bottom side and standard SO-8 pin pitch (1.27 mm). The top-side pinout matches conventional SO-8 layout for drop-in compatibility with existing footprints.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Seven parallel drain terminals connected to internal die drain metallization and bottom-side exposed copper pad - primary current path and thermal conduction path to PCB.
5	Gate (G)	Control terminal for MOSFET turn-on/turn-off; requires low-impedance drive due to Q_g = 65–100 nC.
-	Source (S)	Terminals 1–3 are internally tied to source; visible as three top-side pins - forms return path for load current and reference for gate drive.

Key Features

Feature	Design Value
TrenchFET® silicon technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced total switching + conduction losses in high-frequency power stages.
PowerPAK® SO-8 package	Enables DPAK-level thermal performance (R_thJC = 1.0 °C/W) in SO-8 footprint - eliminates need for larger packages or heatsinks in dense PCB layouts.
Halogen-free & lead-free	Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU - suitable for environmentally regulated industrial and telecom equipment.
Low 1.07 mm profile	Supports ultra-thin end equipment (e.g., blade servers, AI accelerators) where component height is constrained to ≤1.2 mm.
Enhanced body diode	V_SD = 0.72–1.2 V at I_S = 4.3 A - minimizes reverse recovery loss and improves efficiency in synchronous rectification and freewheeling applications.

Applications

Server VRM High-Side Switch	Industrial DC-DC Converter
Use Scenario: Primary switching element in 48 V-to-12 V or 12 V-to-1 V synchronous buck converters powering CPUs, GPUs, and ASICs in rack-mounted servers. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated PWM controller; operates at 300–1000 kHz with precise dead-time management. Use Value: Low R_DS(on) (9.6 mΩ) reduces conduction loss; low Q_g and fast t_f (30–45 ns) minimize switching loss and improve light-load efficiency.	Use Scenario: Main power switch in isolated or non-isolated 24–48 V input DC-DC modules for PLCs, motor drives, and factory automation systems. IC Role / Device Role / Timing Role: Primary switching transistor in hard-switched or ZVS topologies; driven by gate driver IC with 5 V or 12 V output. Use Value: 60 V V_DS provides 2× safety margin over 24 V nominal bus; R_thJC = 1.0 °C/W ensures stable operation under 70 °C ambient without forced air.
Telecom Power Supply	Automotive ADAS Power Management
Use Scenario: Output stage switch in 48 V intermediate bus converters supplying 5 V/3.3 V rails to baseband processors and RF front-ends in 5G macro cells. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side high-side switch operating at >500 kHz with tight thermal constraints. Use Value: Halogen-free construction meets IPC-1752A material declaration requirements; low-profile package fits within 1.2 mm board stackup limits.	Use Scenario: Load switch and power rail controller in camera ECU, radar module, or domain controller requiring ASIL-B capable power delivery. IC Role / Device Role / Timing Role: High-side power switch enabling controlled inrush current and fault protection via external driver and monitoring circuitry. Use Value: Avalanche rating (I_AS = 50 A, E_AS = 125 mJ) withstands load dump transients; wide T_J range (−55 to +150 °C) supports under-hood operation.

Server VRM High-Side Switch

Industrial DC-DC Converter

Use Scenario: Primary switching element in 48 V-to-12 V or 12 V-to-1 V synchronous buck converters powering CPUs, GPUs, and ASICs in rack-mounted servers.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated PWM controller; operates at 300–1000 kHz with precise dead-time management.

Use Value: Low R_DS(on) (9.6 mΩ) reduces conduction loss; low Q_g and fast t_f (30–45 ns) minimize switching loss and improve light-load efficiency.

Use Scenario: Main power switch in isolated or non-isolated 24–48 V input DC-DC modules for PLCs, motor drives, and factory automation systems.

IC Role / Device Role / Timing Role: Primary switching transistor in hard-switched or ZVS topologies; driven by gate driver IC with 5 V or 12 V output.

Use Value: 60 V V_DS provides 2× safety margin over 24 V nominal bus; R_thJC = 1.0 °C/W ensures stable operation under 70 °C ambient without forced air.

Telecom Power Supply

Automotive ADAS Power Management

Use Scenario: Output stage switch in 48 V intermediate bus converters supplying 5 V/3.3 V rails to baseband processors and RF front-ends in 5G macro cells.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side high-side switch operating at >500 kHz with tight thermal constraints.

Use Value: Halogen-free construction meets IPC-1752A material declaration requirements; low-profile package fits within 1.2 mm board stackup limits.

Use Scenario: Load switch and power rail controller in camera ECU, radar module, or domain controller requiring ASIL-B capable power delivery.

IC Role / Device Role / Timing Role: High-side power switch enabling controlled inrush current and fault protection via external driver and monitoring circuitry.

Use Value: Avalanche rating (I_AS = 50 A, E_AS = 125 mJ) withstands load dump transients; wide T_J range (−55 to +150 °C) supports under-hood operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7450DP-T1-GE3	R_DS(on) = 11.5 mΩ @ 10 V; higher Q_g (110 nC); same PowerPAK SO-8 package.	Higher conduction loss but identical thermal and footprint compatibility - suitable when gate drive strength permits.	Select for cost-sensitive designs where 20% higher R_DS(on) is acceptable and gate driver can handle extra charge.
IRF7470PBF	Standard SO-8 package; R_DS(on) = 12.5 mΩ @ 10 V; R_thJC = 16 °C/W - significantly higher thermal resistance.	Limited to lower-current or lower-frequency use due to poor thermal performance; requires larger PCB copper area.	Choose only if legacy SO-8 land pattern must be retained and thermal budget allows ≥40 °C higher junction rise.

Compared with SI7460DP-T1-GE3, Si7450DP-T1-GE3 trades slightly higher conduction loss for identical thermal and layout compatibility, while IRF7470PBF sacrifices thermal performance for SO-8 footprint familiarity - making SI7460DP-T1-GE3 optimal for new designs prioritizing efficiency and compactness.

Availability

SI7460DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply, halogen-free compliance, and high-current switching capability.

Supply support for SI7460DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SI7460DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-density, high-efficiency power conversion in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for SI7460DP-T1-GE3 at 70 °C ambient?

The SI7460DP-T1-GE3 supports 14 A continuous drain current at T_A = 70 °C (steady-state, mounted on 1" × 1" FR4 board). This value reflects derating from the 18 A rating at 25 °C due to thermal limitations, and assumes adequate PCB copper area for heat spreading. The device's low R_thJC of 1.0 °C/W helps maintain safe junction temperatures even under these conditions. Always verify actual board-level thermal performance using the normalized transient impedance curves in the SI7460DP-T1-GE3 datasheet.

Does SI7460DP-T1-GE3 support logic-level gate drive?

Yes, SI7460DP-T1-GE3 supports logic-level gate drive with a gate threshold voltage (V_GS(th)) ranging from 1.0 V to 3.0 V. At V_GS = 4.5 V, it achieves R_DS(on) = 12 mΩ and supports 16 A continuous current, making it compatible with 3.3 V and 5 V PWM controllers and gate drivers. Its transconductance (g_fs = 60 S) ensures strong channel control at low gate voltages, reducing risk of partial turn-on and shoot-through in half-bridge configurations.

What is the avalanche energy rating of SI7460DP-T1-GE3 and how is it relevant in circuit protection?

The SI7460DP-T1-GE3 has a rated single-pulse avalanche energy (E_AS) of 125 mJ and an avalanche current (I_AS) of 50 A. These ratings indicate the device's ability to absorb inductive energy during unclamped inductive switching events - such as MOSFET turn-off with inductive loads or bus transients - without failure. While not intended for repetitive avalanche operation, this capability enhances system robustness in automotive ADAS and industrial motor control applications where load dump or flyback energy may occur.

Can SI7460DP-T1-GE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes, SI7460DP-T1-GE3 uses the PowerPAK® SO-8 package with identical 6.15 mm × 5.15 mm outline and 1.27 mm pin pitch as standard SO-8, enabling drop-in replacement on legacy land patterns. However, its leadless construction places drain terminals on the bottom side - so ensure no traces run under the device body, and verify solder reflow profile per Vishay document 73257. Thermal performance will improve significantly (≈40 °C lower T_J rise) even on standard pads, provided the PCB layout avoids obstruction beneath the drain pad.

What is the recommended solder reflow profile for SI7460DP-T1-GE3?

The SI7460DP-T1-GE3 requires a lead-free reflow profile with peak temperature of 255 °C ± 0 °C, held for 30 seconds maximum, and time above 217 °C between 60–150 seconds. Ramp-up rate must not exceed +3 °C/s; ramp-down rate must not exceed −6 °C/s. Preheat (150–200 °C) duration is limited to 120 seconds. Full details are specified in Vishay document 73257, accessible at www.vishay.com/ppg?73257. Manual soldering with an iron is not recommended due to the leadless construction and thermal mass of the exposed drain pad.

SI7460DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.6mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7460DP-T1-GE3 FAQ

1.How can I place an order for SI7460DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7460DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7460DP-T1-GE3 reliable?

The price and inventory of SI7460DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7460DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7460DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7460DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7460DP-T1-GE3?

SI7460DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7460DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7460DP-T1-GE3?

For technical support, including SI7460DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7460DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7460DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7460DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7460DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7460DP-T1-GE3?

All SI7460DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7460DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7460DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7460DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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