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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7462DP-T1-E3

Name: SI7462DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7462DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7462DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7462DP-T1-E3.pdf

Description:: MOSFET N-CH 200V 2.6A PPAK SO-8

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Product details

Overview

SI7462DP-T1-E3 from Vishay Siliconix is an N-channel 200 V, 4.1 A TrenchFET® power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.130 Ω at V_GS = 10 V, Q_g = 20 nC, and optimized for primary-side switching in offline SMPS.

For engineers reviewing the SI7462DP-T1-E3 datasheet, SI7462DP-T1-E3 pinout, SI7462DP-T1-E3 application, or SI7462DP-T1-E3 equivalent, key selection factors include its 200 V V_DS, low thermal resistance (R_thJC = 2.1 °C/W), PWM-optimized switching performance, and leadless PowerPAK SO-8 footprint compatibility with high-density board layouts.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Q_g = 20 nC, Q_gd = 6.5 nC) supports efficient hard-switched operation in flyback and forward converters.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 4 A and exhibits robust avalanche capability (E_AS = 1.8 mJ), enabling reliable operation under transient overvoltage conditions in unidirectional power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands full rectified line voltage in universal-input offline converters without derating.
R_DS(on) max @ 10 V	0.130 Ω - Limits conduction loss to ≤2.2 W at 4.1 A continuous drain current.
Q_g typ.	20 nC - Enables <25 ns turn-on delay and <30 ns fall time with 6 Ω gate drive impedance.
I_D continuous @ T_A = 25 °C	4.1 A - Supports up to 80 W output in compact primary-side switch designs with FR4 PCB cooling.
R_thJC max	2.1 °C/W - Allows direct thermal coupling to heatsink or copper pour for junction temperature control below 150 °C.
V_GS(th)	2–4 V - Ensures clean logic-level turn-on with standard 5 V or 3.3 V gate drivers.
E_AS	1.8 mJ - Sustains single-pulse inductive energy without failure during transformer reset or fault events.

Pinout & Package

SI7462DP-T1-E3 uses the leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), featuring exposed-drain thermal pads on the bottom side for enhanced heat dissipation. The top-side terminals are arranged in standard SO-8 pin order but with no leads-soldering relies on edge terminations and bottom thermal pad reflow.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four exposed-drain terminals connect to internal die drain metallization and serve as primary thermal path to PCB copper.
G (between pins 1 and 2)	Gate (G)	Single gate terminal located between source pins; requires controlled trace routing to minimize ringing and EMI.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 13% lower R_DS(on) vs. planar MOSFETs at same die size, improving power density in space-constrained adapters.
PowerPAK® SO-8 package	Reduces thermal resistance by 40% versus standard SO-8, enabling 1.9 W steady-state power dissipation on 1" × 1" FR4 without heatsink.
PWM-optimized switching	Q_gd/Q_gs ratio of ~1.44 ensures stable Miller plateau transition and minimizes shoot-through risk in half-bridge configurations.
Body diode recovery t_rr	70–110 ns - Enables use in quasi-resonant flyback without external snubbers in ≤100 kHz designs.
Avalanche-rated	Rated for repetitive 6 A I_AS and 1.8 mJ E_AS, supporting robust operation in non-clamped inductive switching applications.

Applications

AC-DC Adapter Primary Switch	Industrial Flyback PSU
Use Scenario: 24 W universal-input (90–264 V_AC) wall adapter powering IoT sensors. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer during each switching cycle in discontinuous conduction mode (DCM). Use Value: Low R_DS(on) and fast switching minimize losses at 65 kHz, achieving >85% efficiency while maintaining thermal rise <35 °C on 1 oz copper.	Use Scenario: 48 V/1 A industrial power supply operating in harsh ambient (−25 to +70 °C). IC Role / Device Role / Timing Role: Main power switch in isolated flyback topology with integrated feedback via optocoupler. Use Value: 200 V rating eliminates need for series stacking; avalanche ruggedness ensures reliability during line surges per IEC 61000-4-5.
LED Driver Primary Switch	Gate Driver High-Side FET
Use Scenario: Constant-current LED driver for street lighting with active PFC front-end. IC Role / Device Role / Timing Role: Secondary-stage switch in two-transistor flyback or buck-boost configuration driving 36 V LED strings. Use Value: Low gate charge enables direct drive from microcontroller GPIO with minimal external buffering, reducing BOM count.	Use Scenario: High-side level-shifting stage in half-bridge motor driver for 24 V BLDC fans. IC Role / Device Role / Timing Role: Upper-leg switch synchronizing with low-side FET using bootstrap gate drive. Use Value: Fast turn-off (t_f ≤ 30 ns) and low Q_gd suppress shoot-through during dead-time transitions, improving system efficiency by ≥2%.

AC-DC Adapter Primary Switch

Industrial Flyback PSU

Use Scenario: 24 W universal-input (90–264 V_AC) wall adapter powering IoT sensors.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer during each switching cycle in discontinuous conduction mode (DCM).

Use Value: Low R_DS(on) and fast switching minimize losses at 65 kHz, achieving >85% efficiency while maintaining thermal rise <35 °C on 1 oz copper.

Use Scenario: 48 V/1 A industrial power supply operating in harsh ambient (−25 to +70 °C).

IC Role / Device Role / Timing Role: Main power switch in isolated flyback topology with integrated feedback via optocoupler.

Use Value: 200 V rating eliminates need for series stacking; avalanche ruggedness ensures reliability during line surges per IEC 61000-4-5.

LED Driver Primary Switch

Gate Driver High-Side FET

Use Scenario: Constant-current LED driver for street lighting with active PFC front-end.

IC Role / Device Role / Timing Role: Secondary-stage switch in two-transistor flyback or buck-boost configuration driving 36 V LED strings.

Use Value: Low gate charge enables direct drive from microcontroller GPIO with minimal external buffering, reducing BOM count.

Use Scenario: High-side level-shifting stage in half-bridge motor driver for 24 V BLDC fans.

IC Role / Device Role / Timing Role: Upper-leg switch synchronizing with low-side FET using bootstrap gate drive.

Use Value: Fast turn-off (t_f ≤ 30 ns) and low Q_gd suppress shoot-through during dead-time transitions, improving system efficiency by ≥2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	TO-220 package, R_DS(on) = 0.18 Ω @ 10 V, Q_g = 25 nC, higher R_thJA (62 °C/W)	Requires heatsink for >2 W dissipation; unsuitable for ultra-thin adapters.	Choose STP20NM20 only when through-hole mounting and higher thermal mass are acceptable.
IRF640NPBF	TO-220, R_DS(on) = 0.18 Ω @ 10 V, Q_g = 39 nC, no avalanche rating	Lacks E_AS specification; not recommended for unclamped inductive loads.	Select IRF640NPBF only in cost-sensitive, low-reliability consumer applications without surge exposure.

Compared with STP20NM20 and IRF640NPBF, SI7462DP-T1-E3 delivers superior power density, lower switching losses, and guaranteed avalanche ruggedness-making it optimal for compact, high-efficiency, and mission-critical primary-side switching where board area and thermal margin are constrained.

Availability

SI7462DP-T1-E3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback PSUs, LED drivers, and gate driver high-side switches requiring stable component supply and consistent lead-free/halogen-free compliance.

Supply support for SI7462DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The PowerPAK® SO-8 product line was developed to deliver surface-mount MOSFETs with enhanced thermal performance and reduced footprint for space-constrained power conversion systems.

FAQ

What is the maximum continuous drain current for SI7462DP-T1-E3 at 85 °C ambient?

The maximum continuous drain current for SI7462DP-T1-E3 is 1.9 A at T_A = 85 °C, as specified in the Absolute Maximum Ratings table under steady-state conditions. This value accounts for thermal derating due to reduced heat dissipation capability at elevated ambient temperatures and must be validated against actual PCB layout and airflow conditions in the final design.

Does SI7462DP-T1-E3 have a specified avalanche energy rating?

Yes, SI7462DP-T1-E3 has a single-pulse avalanche energy rating of 1.8 mJ at T_J = 25 °C, tested with L = 0.1 mH. This rating is guaranteed per datasheet Section "Absolute Maximum Ratings" and supports reliable operation during transient overvoltage events in flyback and forward converter topologies where the MOSFET may experience unclamped inductive kickback.

Can SI7462DP-T1-E3 be driven directly by a 3.3 V microcontroller GPIO?

SI7462DP-T1-E3 has a gate threshold voltage range of 2–4 V, so it can turn on with 3.3 V drive; however, R_DS(on) is not guaranteed at that voltage. At V_GS = 3.3 V, the device operates in linear region with significantly higher on-resistance. For full enhancement and low-loss switching, a 5–10 V gate drive is required-thus, a level-shifting buffer or dedicated gate driver is recommended for 3.3 V MCU interfaces.

What is the thermal resistance from junction to case (R_thJC) for SI7462DP-T1-E3?

The maximum junction-to-case thermal resistance (R_thJC) for SI7462DP-T1-E3 is 2.1 °C/W under steady-state conditions, measured from junction to the exposed drain pad. This low value reflects the PowerPAK® SO-8's optimized thermal path and enables effective heat transfer to PCB copper or external heatsinks when the drain pad is fully soldered to a thermal plane.

Is SI7462DP-T1-E3 compatible with lead-free reflow profiles?

Yes, SI7462DP-T1-E3 is rated for peak reflow temperatures up to 260 °C per JEDEC J-STD-020, and the "-E3" suffix explicitly denotes lead-free and RoHS-compliant construction. The PowerPAK® SO-8 package is qualified for standard Pb-free SAC305 reflow profiles, including ramp rates and dwell times defined in Vishay document 73257.

SI7462DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 130mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7462DP-T1-E3 FAQ

1.How can I place an order for SI7462DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7462DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7462DP-T1-E3 reliable?

The price and inventory of SI7462DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7462DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7462DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7462DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7462DP-T1-E3?

SI7462DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7462DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7462DP-T1-E3?

For technical support, including SI7462DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7462DP-T1-E3 requirements.

6.How does Aetrix verify that SI7462DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7462DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7462DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7462DP-T1-E3?

All SI7462DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7462DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7462DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7462DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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