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Vishay Siliconix SI7462DP-T1-GE3
- Part No.:
- SI7462DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7462DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 200V 2.6A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,067
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Product details
Overview
SI7462DP-T1-GE3 from Vishay Siliconix is an N-channel 200 V, 4.1 A TrenchFET® power MOSFET in PowerPAK® SO-8 package, with RDS(on) = 0.130 Ω at VGS = 10 V and Qg = 20 nC, optimized for primary-side switching in offline SMPS.
For engineers reviewing the SI7462DP-T1-GE3 datasheet, SI7462DP-T1-GE3 pinout, SI7462DP-T1-GE3 application, or SI7462DP-T1-GE3 equivalent, this device requires attention to gate drive voltage margin (VGS(th) = 2–4 V), thermal resistance (RthJA = 55 °C/W), avalanche energy rating (EAS = 1.8 mJ), and leadless soldering profile per Vishay document 73257.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and fast switching dynamics, with gate charge partitioning (Qgs = 4.5 nC, Qgd = 6.5 nC) supporting PWM operation up to several hundred kHz. Its 200 V VDS rating targets universal-input AC/DC converters.
The PowerPAK® SO-8 package integrates exposed drain pads on the bottom side for enhanced thermal conduction, while its 1.07 mm profile enables compact board layouts. The device supports unidirectional avalanche operation with IAS = 6 A and EAS = 1.8 mJ under specified test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Withstands full rectified 115/230 VAC input with safety margin in flyback/LLC primary switches |
| RDS(on) max @ 10 V | 0.130 Ω - Enables ≤0.22 W conduction loss at 4.1 A continuous drain current |
| Qg typ. | 20 nC - Supports efficient 300–500 kHz PWM switching with moderate gate driver strength |
| ID cont. @ TA = 25 °C | 4.1 A - Rated for continuous operation with FR4 board cooling per JEDEC standard |
| EAS | 1.8 mJ - Provides single-pulse avalanche ruggedness during transformer reset or overvoltage transients |
| VGS(th) | 2–4 V - Ensures reliable turn-on with standard 5 V or 10 V gate drivers; avoids partial enhancement |
| RthJA (steady state) | 55 °C/W - Requires ≥1 cm² copper pour for thermal management in ambient ≤50 °C |
Pinout & Package
SI7462DP-T1-GE3 uses the PowerPAK® SO-8 (leadless) package: 6.15 mm × 5.15 mm footprint, 1.07 mm height, with exposed drain terminals on the bottom side. Thermal performance relies on soldered drain pad area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal die; electrically tied together for low-inductance return path |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pads on bottom side; primary thermal and current path to PCB ground plane |
| G (top-side marked pad) | Gate (G) | Single top-side gate terminal; requires controlled impedance routing to minimize ringing during fast switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 13% lower RDS(on) vs. planar MOSFETs at same voltage class, reducing conduction losses |
| PowerPAK® SO-8 package | 1.07 mm profile enables ultra-thin power supplies; 2.1 °C/W RthJC improves heat transfer to PCB |
| PWM-optimized gate charge | Qgd/Qgs ratio of ~1.44 ensures stable Miller plateau behavior and reduced switching overshoot |
| Guaranteed avalanche rating | EAS = 1.8 mJ tested per JEDEC JESD24-1; eliminates need for external snubbers in many flyback designs |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709C; suitable for consumer and industrial end equipment |
Applications
| AC/DC Flyback Converter Primary Switch | Offline LED Driver High-Side Switch |
|---|---|
Use Scenario: Used as main switching element in 15–30 W universal-input flyback converters for adapters and chargers. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from bulk capacitor to transformer primary winding. Use Value: 200 V rating accommodates 375 V DC bus with margin; 0.130 Ω RDS(on) keeps conduction loss below 2.2 W at full load. |
Use Scenario: High-side switch in constant-current LED drivers powered directly from rectified AC line. IC Role / Device Role / Timing Role: Regulates LED string current by modulating duty cycle in buck-derived topology. Use Value: Avalanche capability handles inductive kickback from LED choke; low Qg enables clean dimming control at 1–10 kHz PWM. |
| Industrial Control Power Supply | Smart Home Power Module |
Use Scenario: Input-stage switch in DIN-rail mounted 24 V DC power supplies for PLC I/O modules. IC Role / Device Role / Timing Role: Isolated primary switch enabling reinforced insulation between AC mains and low-voltage control circuitry. Use Value: -55 to +150 °C operating range supports extended temperature environments; 65 °C/W max RthJA allows derating to 1.9 A at 85 °C ambient. |
Use Scenario: Compact AC/DC conversion stage in Wi-Fi/Zigbee smart plugs and outlets with space-constrained PCBs. IC Role / Device Role / Timing Role: High-efficiency primary switch enabling >85% efficiency in <10 cm² footprint designs. Use Value: 1.07 mm height fits under mechanical enclosures; PowerPAK® thermal design reduces heatsink requirement by 40% vs. SO-8. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 200 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | TO-220 package; RDS(on) = 0.18 Ω @ 10 V; higher Qg = 28 nC; no guaranteed avalanche rating | Requires heatsink and larger PCB area; less suitable for high-density SMT designs | Choose when through-hole mounting or legacy TO-220 layout compatibility is required |
| IRF640NPBF | TO-220; RDS(on) = 0.18 Ω @ 10 V; Qg = 39 nC; EAS not specified; higher RthJA = 62 °C/W | Limited to lower-frequency (<100 kHz) operation due to slower switching; no avalanche validation | Acceptable only for cost-sensitive, non-critical linear or low-frequency switching applications |
Compared with STP20NM20 and IRF640NPBF, SI7462DP-T1-GE3 delivers superior power density via its leadless PowerPAK® SO-8 package, lower conduction loss, and verified avalanche ruggedness-making it the preferred choice for modern compact, high-reliability AC/DC primary-side switching.
Availability
SI7462DP-T1-GE3 is available at Aetrix Electronics and suitable for AC/DC flyback converters, industrial control power supplies, and smart home power modules requiring stable component supply across production lifecycles.
Supply support for SI7462DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7462DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-voltage, medium-current primary-side switching in space-constrained offline power supplies.
FAQ
What is the maximum continuous drain current for SI7462DP-T1-GE3 at 85 °C ambient?
The SI7462DP-T1-GE3 supports 1.9 A continuous drain current at TA = 85 °C with standard FR4 board mounting, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by RthJA = 55 °C/W and junction temperature cap of 150 °C. Designers must verify PCB copper area and airflow to sustain this rating in actual SI7462DP-T1-GE3 implementations.
Does SI7462DP-T1-GE3 have a specified avalanche energy rating?
Yes, SI7462DP-T1-GE3 has a guaranteed single-pulse avalanche energy rating of EAS = 1.8 mJ, tested per JEDEC JESD24-1 with L = 0.1 mH. This rating applies under defined pulse conditions (duty cycle ≤ 1 %) and enables robust operation during transformer reset or transient overvoltage events without external clamping in many flyback topologies using SI7462DP-T1-GE3.
What is the gate threshold voltage range for SI7462DP-T1-GE3?
The gate threshold voltage VGS(th) for SI7462DP-T1-GE3 is specified from 2 V to 4 V at ID = 250 μA, ensuring reliable turn-on with standard 5 V logic-level drivers and compatibility with 10 V gate drive systems. This range prevents unintended conduction near 0 V and guarantees full enhancement above 4 V, critical for stable SI7462DP-T1-GE3 operation in PWM circuits.
Can SI7462DP-T1-GE3 be hand-soldered using a soldering iron?
No-Vishay explicitly advises against manual soldering with a soldering iron for SI7462DP-T1-GE3 due to its leadless PowerPAK® SO-8 construction. Rework requires reflow profiling per document 73257, with peak temperature ≤ 260 °C. Attempting iron-based soldering risks thermal damage to the die or insufficient interconnection to the exposed drain pads, compromising both electrical and thermal performance of SI7462DP-T1-GE3.
What is the typical total gate charge of SI7462DP-T1-GE3 and how does it affect switching speed?
The typical total gate charge Qg of SI7462DP-T1-GE3 is 20 nC at VDS = 100 V, VGS = 10 V, and ID = 4.1 A. With Qgs = 4.5 nC and Qgd = 6.5 nC, this enables fast turn-on (td(on) = 15 ns) and controlled Miller plateau transition, supporting efficient switching up to 500 kHz in well-designed gate drive circuits using SI7462DP-T1-GE3.
SI7462DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7462DP-T1-GE3 FAQ
1.How can I place an order for SI7462DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7462DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7462DP-T1-GE3 reliable?
The price and inventory of SI7462DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7462DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7462DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7462DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7462DP-T1-GE3?
SI7462DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7462DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7462DP-T1-GE3?
For technical support, including SI7462DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7462DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7462DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7462DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7462DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7462DP-T1-GE3?
All SI7462DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7462DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7462DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7462DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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