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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7463DP-T1-E3

Name: SI7463DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7463DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7463DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7463DP-T1-E3.pdf

Description:: MOSFET P-CH 40V 11A PPAK SO-8

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Product details

Overview

SI7463DP-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for -40 V V_DS, 0.0092 Ω R_DS(on) at V_GS = -10 V, and -18.6 A continuous drain current (T_J = 150 °C). It serves as a high-efficiency synchronous rectifier or load switch in DC/DC converters and power management circuits.

For engineers reviewing the SI7463DP-T1-E3 datasheet, SI7463DP-T1-E3 pinout, SI7463DP-T1-E3 application, or SI7463DP-T1-E3 equivalent, key selection criteria include its low R_DS(on) at -4.5 V gate drive, 1.07 mm profile enabling space-constrained PCB layouts, and thermal performance matching DPAK-level junction-to-case resistance (1.3 °C/W max).

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 140 nC (V_GS = -10 V) and t_f = 150 ns. Its gate threshold voltage range of -1 V to -3 V ensures reliable turn-on under standard logic-level control in negative-rail applications.

The PowerPAK SO-8 package features an exposed copper drain pad on the bottom surface, providing direct thermal conduction to the PCB and achieving R_thJC = 1.3 °C/W (max), while maintaining SO-8 footprint compatibility and eliminating lead-induced parasitic inductance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum reverse-blocking capability for 36 V nominal bus systems with margin.
R_DS(on) @ V_GS = -10 V	0.0092 Ω - Enables <1.7 W conduction loss at -18.6 A, critical for high-current synchronous rectification.
R_DS(on) @ V_GS = -4.5 V	0.0140 Ω - Supports logic-level gate drive without level-shifting, reducing system component count.
I_D (continuous, T_J = 150 °C)	-18.6 A - Sustains high pulsed loads in industrial power supplies and motor drivers.
Q_g	140 nC - Determines gate driver power requirement and switching loss in hard-switched topologies.
R_thJC	1.3 °C/W (max) - Enables efficient heat transfer from die to PCB copper, supporting compact thermal design.
V_GS(th)	-1 to -3 V - Ensures predictable turn-on behavior with standard microcontroller GPIO or dedicated gate drivers.

Pinout & Package

SI7463DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), featuring an exposed drain pad on the bottom surface for enhanced thermal dissipation. The top-side pin layout matches standard SO-8 footprints, enabling drop-in replacement in existing designs.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤ ±20 V rating and drives 140 nC total gate charge.
2 (S)	Source	Reference node for gate drive; connects to system ground or negative rail in high-side configurations.
3 (S)	Source	Second source connection; paralleled internally with Pin 2 to reduce source inductance and improve current sharing.
4 (S)	Source	Third source connection; provides low-inductance return path for high di/dt switching currents.
5 (D)	Drain	Main power terminal; electrically connected to exposed bottom copper pad for thermal and electrical conduction.
6 (D)	Drain	Second drain connection; shares current with Pins 5, 7, and 8 to minimize resistance and heating.
7 (D)	Drain	Third drain connection; supports high-current paths with reduced IR drop across package leads.
8 (D)	Drain	Fourth drain connection; maximizes current-carrying capacity and thermal spreading to PCB copper.

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers 0.0092 Ω R_DS(on) at -10 V and 0.0140 Ω at -4.5 V, enabling high-efficiency operation in 12–36 V systems.
PowerPAK® SO-8 package	Provides DPAK-equivalent thermal resistance (1.3 °C/W max) in SO-8 footprint, eliminating need for layout redesign.
Exposed drain pad	Enables direct thermal coupling to PCB copper, reducing junction-to-ambient resistance by up to 40 °C/W vs. standard SO-8.
Low-profile 1.07 mm height	Supports ultra-thin power modules and portable electronics where Z-height is constrained.
Lead (Pb)-free and RoHS-compliant	Meets global environmental regulations; qualified for reflow per J-STD-020 with peak temperature up to 255 °C.

Applications

High-Efficiency DC/DC Converters	Industrial Motor Control
Use Scenario: Used as synchronous rectifier in isolated flyback or forward converters delivering 12–24 V output at up to 20 A. IC Role / Device Role / Timing Role: P-channel MOSFET operating in low-side synchronous rectification mode, replacing Schottky diodes to reduce conduction losses. Use Value: Achieves >95% efficiency at full load due to 0.0140 Ω R_DS(on) at -4.5 V gate drive, cutting rectifier losses by 60% versus 40 V Schottky.	Use Scenario: Employed as H-bridge high-side switch in 24 V brushed DC motor drivers for factory automation equipment. IC Role / Device Role / Timing Role: High-side load switch controlling motor direction and braking via gate-controlled source-follower configuration. Use Value: Withstands repetitive -60 A pulsed drain current and maintains stable R_DS(on) over -55 to 150 °C, ensuring robust commutation under stall conditions.
Hot-Swap Power Distribution	Telecom Power Management
Use Scenario: Integrated into OR-ing and hot-swap controllers for redundant 48 V backplane power feeds in telecom racks. IC Role / Device Role / Timing Role: Reverse-polarity protection and inrush current limiting switch placed between input supply and downstream DC/DC stages. Use Value: Low 1.3 °C/W R_thJC prevents thermal runaway during sustained 15 A load faults, enabling reliable fault recovery without derating.	Use Scenario: Deployed as primary load switch in intermediate bus architecture (IBA) for point-of-load (POL) regulators feeding FPGAs and ASICs. IC Role / Device Role / Timing Role: Controlled power enable/disconnect element managing sequencing and brown-out response in multi-rail systems. Use Value: Gate threshold of -1 to -3 V allows direct interface with 3.3 V supervisor ICs, eliminating external level shifters and reducing BOM count.

High-Efficiency DC/DC Converters

Industrial Motor Control

Use Scenario: Used as synchronous rectifier in isolated flyback or forward converters delivering 12–24 V output at up to 20 A.

IC Role / Device Role / Timing Role: P-channel MOSFET operating in low-side synchronous rectification mode, replacing Schottky diodes to reduce conduction losses.

Use Value: Achieves >95% efficiency at full load due to 0.0140 Ω R_DS(on) at -4.5 V gate drive, cutting rectifier losses by 60% versus 40 V Schottky.

Use Scenario: Employed as H-bridge high-side switch in 24 V brushed DC motor drivers for factory automation equipment.

IC Role / Device Role / Timing Role: High-side load switch controlling motor direction and braking via gate-controlled source-follower configuration.

Use Value: Withstands repetitive -60 A pulsed drain current and maintains stable R_DS(on) over -55 to 150 °C, ensuring robust commutation under stall conditions.

Hot-Swap Power Distribution

Telecom Power Management

Use Scenario: Integrated into OR-ing and hot-swap controllers for redundant 48 V backplane power feeds in telecom racks.

IC Role / Device Role / Timing Role: Reverse-polarity protection and inrush current limiting switch placed between input supply and downstream DC/DC stages.

Use Value: Low 1.3 °C/W R_thJC prevents thermal runaway during sustained 15 A load faults, enabling reliable fault recovery without derating.

Use Scenario: Deployed as primary load switch in intermediate bus architecture (IBA) for point-of-load (POL) regulators feeding FPGAs and ASICs.

IC Role / Device Role / Timing Role: Controlled power enable/disconnect element managing sequencing and brown-out response in multi-rail systems.

Use Value: Gate threshold of -1 to -3 V allows direct interface with 3.3 V supervisor ICs, eliminating external level shifters and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.012 Ω @ -10 V; larger SO-8 package (1.75 mm height); higher Q_g = 160 nC	Less suitable for ultra-low-profile designs; higher switching loss in high-frequency converters	Prefer SI7463DP-T1-E3 when board height ≤ 1.1 mm or gate drive current is limited.
DMN601DWK-7	R_DS(on) = 0.015 Ω @ -4.5 V; SOT-26 package; lower I_D = -4.5 A continuous	Limited to low-power applications; insufficient current handling for >5 A loads	Choose SI7463DP-T1-E3 for applications requiring >10 A continuous current and thermal robustness.

Compared with IRF7470PBF and DMN601DWK-7, SI7463DP-T1-E3 delivers superior thermal performance (1.3 °C/W R_thJC), tighter gate threshold (-1 to -3 V), and optimized geometry for high-current PCB copper spreading-making it the preferred choice for industrial and telecom power stages demanding reliability and density.

Availability

SI7463DP-T1-E3 is available at Aetrix Electronics and suitable for high-reliability DC/DC converters, industrial motor control systems, and telecom power distribution requiring stable component supply and long-term manufacturability.

Supply support for SI7463DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SI7463DP-T1-E3 belongs to Vishay's TrenchFET® Power MOSFET family, engineered specifically for high-current, low-voltage power conversion in space-constrained industrial and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for SI7463DP-T1-E3 at 70 °C ambient?

The SI7463DP-T1-E3 supports -15 A continuous drain current at T_A = 70 °C with proper PCB copper heatsinking. This rating assumes mounting on a 1" × 1" FR4 board per datasheet condition (Document Number: 72440), and reflects derating from the -18.6 A value at 25 °C ambient due to thermal limitations.

Does SI7463DP-T1-E3 require a gate resistor for safe operation?

While SI7463DP-T1-E3 does not mandate a gate resistor, a 6 Ω series gate resistor is recommended in switching applications to control dV/dt and prevent oscillation, based on typical test conditions in the datasheet (t_d(on), t_r measurements). Omitting it may cause ringing or shoot-through in high-speed synchronous rectifiers.

Can SI7463DP-T1-E3 be used in place of a standard SO-8 MOSFET without PCB changes?

Yes - SI7463DP-T1-E3 uses the same outline and pinout as standard SO-8 packages, including identical 1.27 mm lead pitch and 5.15 mm × 6.15 mm footprint. Its leadless PowerPAK® SO-8 design fits existing SO-8 land patterns, though optimal thermal performance requires extending the drain pad copper area per Application Note AN821.

What is the safe operating area (SOA) limitation for SI7463DP-T1-E3 at DC conditions?

At DC operation, SI7463DP-T1-E3 is limited by R_DS(on)*I² power dissipation. With R_DS(on) = 0.0092 Ω and P_D = 3.4 W at T_A = 70 °C, the absolute maximum DC current is approximately -19.4 A before exceeding thermal limits - consistent with the -18.6 A rated value at T_J = 150 °C.

Is SI7463DP-T1-E3 suitable for reverse polarity protection in automotive applications?

SI7463DP-T1-E3 is rated for -55 to +150 °C operating junction temperature and supports -40 V V_DS, making it technically viable for 12 V automotive reverse polarity protection. However, it is not AEC-Q101 qualified; for automotive production use, consult Vishay's AEC-Q101-certified equivalents such as SI7862DP-T1-GE3.

SI7463DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.2mOhm @ 18.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7463DP-T1-E3 FAQ

1.How can I place an order for SI7463DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7463DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7463DP-T1-E3 reliable?

The price and inventory of SI7463DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7463DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7463DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7463DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7463DP-T1-E3?

SI7463DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7463DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7463DP-T1-E3?

For technical support, including SI7463DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7463DP-T1-E3 requirements.

6.How does Aetrix verify that SI7463DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7463DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7463DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7463DP-T1-E3?

All SI7463DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7463DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7463DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7463DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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