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Vishay Siliconix SI7463DP-T1-GE3
- Part No.:
- SI7463DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7463DP-T1-GE3.pdf
- Description:
- MOSFET P-CH 40V 11A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,772
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Product details
Overview
SI7463DP-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for -40 V VDS, 0.0092 Ω RDS(on) at VGS = -10 V, and -18.6 A continuous drain current (TJ = 150 °C). It serves as a high-efficiency synchronous rectifier or load switch in DC/DC converters and power management circuits.
For engineers reviewing the SI7463DP-T1-GE3 datasheet, SI7463DP-T1-GE3 pinout, SI7463DP-T1-GE3 application, or SI7463DP-T1-GE3 equivalent, key selection criteria include its low RDS(on) at -4.5 V gate drive, 1.07 mm profile for space-constrained layouts, halogen-free and lead-free compliance, and thermal performance matching DPAK-level RthJC = 1.0 °C/W.
Technical Context
This device uses trench-gate silicon technology to achieve low on-resistance and fast switching with Qg = 121 nC (typ.) and td(off) = 200 ns (typ.). Its gate threshold voltage range of -1 V to -3 V ensures reliable turn-on under standard logic-level control while maintaining robust noise immunity.
The PowerPAK SO-8 package features an exposed copper drain pad on the bottom surface for direct thermal conduction, enabling junction-to-case thermal resistance as low as 1.0 °C/W - equivalent to DPAK - while maintaining SO-8 footprint compatibility and 6.15 mm × 5.15 mm board area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for negative-rail high-side switching or reverse polarity protection. |
| RDS(on) | 0.0092 Ω at VGS = -10 V - Enables <180 mW conduction loss at 15 A, critical for high-current DC/DC output stages. |
| ID (continuous) | -18.6 A at TJ = 150 °C - Supports high-power load switching without derating on 1"×1" FR4 boards. |
| Qg | 121 nC (typ.) - Determines gate drive power requirement; enables efficient operation with standard MOSFET drivers. |
| RthJC | 1.0 °C/W (typ.) - Allows direct heat transfer from die to PCB copper, reducing thermal bottleneck vs. standard SO-8 (16 °C/W). |
| VGS(th) | -1 to -3 V - Ensures full enhancement with -4.5 V or -10 V logic-level gate drive; avoids partial turn-on in noisy environments. |
| VSD | -0.8 to -1.2 V - Low body diode forward voltage improves efficiency in bidirectional current paths and synchronous rectification. |
Pinout & Package
SI7463DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm × 1.07 mm), featuring an exposed copper drain pad on the bottom surface for thermal and electrical connection. The top-side pin layout matches standard SO-8 footprints, enabling drop-in replacement on existing layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source node; electrically tied internally; connects to ground or low-side return path. |
| 5, 6, 7, 8 | Drain | High-current output terminal; bottom-side exposed copper pad provides primary thermal path and low-inductance current return. |
| 3 | Gate | Control input; requires -10 V or -4.5 V drive for specified RDS(on); sensitive to ESD (IGSS ≤ ±100 nA). |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables ultra-low RDS(on) (0.0092 Ω) and high cell density for compact die size within SO-8 footprint. |
| PowerPAK® SO-8 package | Delivers DPAK-equivalent thermal resistance (RthJC = 1.0 °C/W) in SO-8 outline, eliminating need for larger packages. |
| Halogen-free & Pb-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements; suitable for environmentally regulated industrial and automotive programs. |
| Low-profile 1.07 mm height | Enables use in ultra-thin power modules and portable electronics where Z-axis clearance is constrained. |
| Fast switching with low Qgd | Qgd = 30.3 nC (typ.) minimizes Miller plateau time, supporting >500 kHz PWM operation in high-frequency DC/DC converters. |
Applications
| DC/DC Synchronous Rectifier | Reverse Polarity Protection |
|---|---|
Use Scenario: Secondary-side rectification in isolated 12 V–48 V input buck-derived DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: P-channel MOSFET operating as low-loss synchronous rectifier, replacing Schottky diodes to reduce conduction losses. Use Value: 0.0092 Ω RDS(on) cuts conduction loss by >60% vs. typical 40 V Schottky, improving full-load efficiency by up to 1.8%. | Use Scenario: Input protection circuit for 24 V industrial controllers exposed to field wiring errors. IC Role / Device Role / Timing Role: High-side P-channel switch placed between input connector and system rail to block reverse voltage. Use Value: -40 V VDS rating and -18.6 A ID support 24 V systems with surge tolerance; low RDS(on) limits voltage drop to <200 mV at 10 A. |
| Hot-Swap Controller FET | Motor Drive High-Side Switch |
Use Scenario: OR-ing and inrush limiting in redundant 12 V power supplies for network switches. IC Role / Device Role / Timing Role: Load switch controlled by hot-swap IC to manage turn-on slew rate and fault current limiting. Use Value: Fast tf = 100 ns (typ.) and low Qg enable precise gate timing; RthJC = 1.0 °C/W sustains pulsed loads without thermal runaway. | Use Scenario: High-side driver in 24 V brushed DC motor H-bridge for factory automation actuators. IC Role / Device Role / Timing Role: Upper-leg P-channel switch controlling motor voltage; driven by charge-pump gate driver. Use Value: VGS(th) = -1 to -3 V ensures clean turn-on with -4.5 V gate drive; low RDS(on) reduces I²R heating during 15 A stall conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7453DP-T1-GE3 | Same PowerPAK SO-8 package, but -30 V VDS, 0.0058 Ω RDS(on) at -10 V, -22.5 A ID. | Better suited for lower-voltage (<30 V) high-current rails where tighter VDS margin is acceptable. | Select when system bus voltage is ≤30 V and lowest possible conduction loss is required. |
| IRF7470PbF | SO-8 package, -40 V VDS, 0.012 Ω RDS(on) at -10 V, -12 A ID, higher RthJA = 62 °C/W. | Higher thermal resistance and lower current rating limit use in thermally dense layouts. | Consider only if legacy SO-8 land pattern must be reused without copper enhancement and power dissipation <1.5 W. |
Compared with SI7463DP-T1-GE3, Si7453DP-T1-GE3 offers lower RDS(on) and higher current but reduced voltage headroom, while IRF7470PbF trades thermal performance and current capability for broader legacy compatibility - making SI7463DP-T1-GE3 the optimal balance of 40 V rating, thermal efficiency, and board-space economy.
Availability
SI7463DP-T1-GE3 is available at Aetrix Electronics and suitable for industrial power supplies, telecom DC/DC modules, and automotive body control units requiring stable component supply and halogen-free compliance.
Supply support for SI7463DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7463DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-current, low-voltage power conversion where thermal density and board-area constraints demand DPAK-level performance in SO-8 footprint.
FAQ
What is the maximum continuous drain current rating for SI7463DP-T1-GE3 at 70 °C ambient temperature?
The SI7463DP-T1-GE3 supports -15 A continuous drain current at TA = 70 °C when mounted on a 1" × 1" FR4 board, per the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures, and assumes proper PCB copper layout per Vishay Application Note AN821.
Does SI7463DP-T1-GE3 require a gate driver for operation at 10 A load current?
Yes - SI7463DP-T1-GE3 benefits from a dedicated gate driver due to its 121 nC total gate charge. Driving it directly from a microcontroller GPIO (typically limited to ~20 mA) would result in slow switching, increased switching losses, and potential thermal stress. A driver like the TC4427 or MIC4423 ensures full enhancement within nanoseconds and maintains efficiency at 10 A loads.
Can SI7463DP-T1-GE3 be used as a direct replacement for standard SO-8 P-channel MOSFETs on existing PCBs?
Yes - SI7463DP-T1-GE3 uses the same pinout and footprint as standard SO-8 packages, allowing direct placement on legacy layouts. However, its exposed drain pad on the bottom requires matching copper land patterns per Vishay AN826 for optimal thermal performance; using the original SO-8 pads yields functional operation but ~10 °C/W higher RthJA.
What is the body diode forward voltage (VSD) specification for SI7463DP-T1-GE3, and how does it impact reverse recovery?
The SI7463DP-T1-GE3 has a body diode forward voltage of -0.8 to -1.2 V at IS = -4.5 A and VGS = 0 V. Its reverse recovery time (trr) is 45–70 ns, enabling efficient operation in synchronous rectification and freewheeling paths without significant tail current or ringing.
Is SI7463DP-T1-GE3 suitable for automotive applications requiring AEC-Q101 qualification?
No - SI7463DP-T1-GE3 is not AEC-Q101 qualified. While it meets industrial temperature range (-55 to +150 °C) and halogen-free requirements, Vishay documents it for commercial and industrial use only. For automotive-grade equivalents, consider the AEC-Q101-qualified Si7463DP-T1-E3 variant or consult Vishay's automotive MOSFET portfolio.
SI7463DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.2mOhm @ 18.6A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7463DP-T1-GE3 FAQ
1.How can I place an order for SI7463DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7463DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7463DP-T1-GE3 reliable?
The price and inventory of SI7463DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7463DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7463DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7463DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7463DP-T1-GE3?
SI7463DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7463DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7463DP-T1-GE3?
For technical support, including SI7463DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7463DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7463DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7463DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7463DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7463DP-T1-GE3?
All SI7463DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7463DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7463DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7463DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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