Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7464DP-T1-E3

Name: SI7464DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7464DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI7464DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7464DP-T1-E3.pdf

Description:: MOSFET N-CH 200V 1.8A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,034

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI7464DP-T1-E3 from Vishay Siliconix is an N-channel 200 V (D-S) fast-switching TrenchFET® power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.195 Ω (typ.) at V_GS = 10 V and 2.8 A continuous drain current, optimized for primary-side switching in offline SMPS.

For engineers reviewing the SI7464DP-T1-E3 datasheet, SI7464DP-T1-E3 pinout, SI7464DP-T1-E3 application, or SI7464DP-T1-E3 equivalent, key selection criteria include its 200 V V_DS, low 12 nC typical gate charge, 2.9 °C/W junction-to-case thermal resistance, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high voltage blocking (200 V) with low on-resistance and fast switching dynamics. Its gate charge profile (Q_g = 12 nC typ., Q_gd = 3.8 nC) supports PWM operation up to several hundred kHz with minimal switching loss.

The device integrates a body diode with V_SD = 0.8 V (typ.) at I_S = 3.5 A and exhibits robust avalanche capability (E_AS = 0.45 mJ), enabling reliable operation in inductive load switching and flyback converter primary-side applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports primary-side switching in universal-input offline converters up to 265 VAC.
R_DS(on) max @ V_GS = 10 V	0.24 Ω - Enables low conduction loss at full load in 2–3 A power stages.
Q_g typ.	12 nC - Reduces gate drive power and enables efficient high-frequency PWM control.
I_D continuous (T_J = 150 °C)	2.8 A - Sustains steady-state current in compact, thermally constrained layouts.
R_thJC max	3.5 °C/W - Provides direct thermal path from die to PCB copper, supporting >2 W dissipation with proper layout.
V_GS(th)	2–4 V - Ensures clean turn-on with standard 5 V or 10 V gate drivers without overdrive risk.
Body diode reverse recovery t_rr	60–90 ns - Limits switching node ringing and EMI in hard-switched topologies.

Pinout & Package

SI7464DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), featuring exposed drain pads on the bottom for enhanced thermal conduction and compatibility with standard SO-8 land patterns.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four large-area drain terminals connect to bottom-exposed copper pad-primary thermal and current path to PCB.
G (Pin 3 side, top-side marking)	Gate (G)	Single gate terminal located adjacent to source pins-minimizes gate loop inductance for stable high-speed switching.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 200 V rating with sub-0.2 Ω R_DS(on), enabling higher efficiency than planar MOSFETs at same voltage class.
PowerPAK® SO-8 package	Same footprint as SO-8 but with 1.07 mm height and exposed drain-enables drop-in replacement with 3× lower R_thJC vs. standard SO-8.
PWM-optimized switching	Low Q_gd/Q_g ratio (3.8/12 nC) reduces Miller effect, improving noise immunity and enabling clean turn-off in high-dV/dt environments.
Robust avalanche rating	IAS = 3 A, EAS = 0.45 mJ - Withstands repetitive inductive energy spikes without derating in flyback or forward converter primary switches.
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for consumer, industrial, and medical end equipment.

Applications

AC-DC Flyback Converters	Offline LED Drivers
Use Scenario: Primary-side switch in universal-input (85–265 VAC), 15–25 W isolated flyback power supplies for adapters and chargers. IC Role / Device Role / Timing Role: High-voltage power switch controlled by PWM controller IC (e.g., UC3842, VIPer series) operating at 65–130 kHz. Use Value: Low R_DS(on) and fast switching minimize conduction and transition losses, enabling >85% efficiency at full load without heatsink.	Use Scenario: Constant-voltage primary switch in non-isolated buck-derived LED drivers for commercial lighting (e.g., T8 tube replacements). IC Role / Device Role / Timing Role: Main power switch synchronized to controller's gate drive signal; handles 200 V DC bus with 2–3 A peak current. Use Value: Tight V_GS(th) distribution ensures consistent turn-on across temperature, reducing output ripple and improving dimming linearity.
Industrial AC-DC Power Supplies	Smart Home Power Modules
Use Scenario: Primary-side switch in 30–40 W industrial SMPS with extended temperature range (−40 to +85 °C ambient). IC Role / Device Role / Timing Role: High-reliability power switch subjected to surge, line transients, and thermal cycling per IEC 61000-4-x standards. Use Value: Guaranteed avalanche energy and low R_thJC ensure stable operation under overload and short-circuit conditions without thermal runaway.	Use Scenario: Compact primary switch in space-constrained smart plug, IoT gateway, or voice assistant power sections. IC Role / Device Role / Timing Role: Fast-turning MOSFET enabling high-frequency operation (≥100 kHz) to shrink transformer and filter size. Use Value: PowerPAK® SO-8's 1.07 mm profile allows ultra-low-profile board stacking, critical for sub-20 mm enclosure heights.

AC-DC Flyback Converters

Offline LED Drivers

Use Scenario: Primary-side switch in universal-input (85–265 VAC), 15–25 W isolated flyback power supplies for adapters and chargers.

IC Role / Device Role / Timing Role: High-voltage power switch controlled by PWM controller IC (e.g., UC3842, VIPer series) operating at 65–130 kHz.

Use Value: Low R_DS(on) and fast switching minimize conduction and transition losses, enabling >85% efficiency at full load without heatsink.

Use Scenario: Constant-voltage primary switch in non-isolated buck-derived LED drivers for commercial lighting (e.g., T8 tube replacements).

IC Role / Device Role / Timing Role: Main power switch synchronized to controller's gate drive signal; handles 200 V DC bus with 2–3 A peak current.

Use Value: Tight V_GS(th) distribution ensures consistent turn-on across temperature, reducing output ripple and improving dimming linearity.

Industrial AC-DC Power Supplies

Smart Home Power Modules

Use Scenario: Primary-side switch in 30–40 W industrial SMPS with extended temperature range (−40 to +85 °C ambient).

IC Role / Device Role / Timing Role: High-reliability power switch subjected to surge, line transients, and thermal cycling per IEC 61000-4-x standards.

Use Value: Guaranteed avalanche energy and low R_thJC ensure stable operation under overload and short-circuit conditions without thermal runaway.

Use Scenario: Compact primary switch in space-constrained smart plug, IoT gateway, or voice assistant power sections.

IC Role / Device Role / Timing Role: Fast-turning MOSFET enabling high-frequency operation (≥100 kHz) to shrink transformer and filter size.

Use Value: PowerPAK® SO-8's 1.07 mm profile allows ultra-low-profile board stacking, critical for sub-20 mm enclosure heights.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7454DP-T1-E3	R_DS(on) = 0.16 Ω (max @ 10 V), Q_g = 14 nC - lower on-resistance but higher gate charge.	Better conduction loss at <2 A, slightly higher drive loss above 200 kHz.	Prefer when thermal margin is tight and switching frequency ≤100 kHz.
IRF640NPBF	TO-220 package, R_DS(on) = 0.18 Ω (max), Q_g = 67 nC - higher gate charge, larger footprint, higher R_thJA.	Requires heatsink above ~1.5 W; unsuitable for high-density or surface-mount-only designs.	Select only when through-hole assembly is mandated or legacy TO-220 layout must be retained.

Compared with SI7464DP-T1-E3, Si7454DP-T1-E3 offers improved conduction efficiency but trades off switching speed, while IRF640NPBF provides identical voltage rating but lacks surface-mount thermal performance and requires mechanical mounting-making SI7464DP-T1-E3 optimal for modern compact, high-efficiency SMPS designs.

Availability

SI7464DP-T1-E3 is available at Aetrix Electronics and suitable for AC-DC flyback converters, industrial power supplies, and smart home power modules requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for SI7464DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The SI7464DP-T1-E3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered for high-voltage, medium-current switching in space- and thermally-constrained offline power conversion systems.

FAQ

What is the maximum continuous drain current rating for SI7464DP-T1-E3 at 70 °C ambient?

The SI7464DP-T1-E3 supports 2.2 A continuous drain current at T_A = 70 °C (steady state, mounted on 1" × 1" FR4 board). This value reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes adequate PCB copper area for thermal spreading. The device's R_thJA of 60 °C/W (max) governs this limit, and actual current capability improves with enhanced board-level thermal design.

Does SI7464DP-T1-E3 have a specified avalanche energy rating?

Yes, SI7464DP-T1-E3 has a single-pulse avalanche energy rating (E_AS) of 0.45 mJ, tested at I_AS = 3 A. This rating is guaranteed by design and ensures robustness against inductive switching transients in flyback and forward converter primary circuits. It is not production-tested but validated per AEC-Q101 stress methodologies and supports reliable operation without external snubbers in well-designed layouts.

Can SI7464DP-T1-E3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes, SI7464DP-T1-E3 uses the same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8 packages, allowing direct substitution on legacy boards. However, its PowerPAK® construction places drain terminals on the bottom side-so the PCB must expose copper for the drain pad and avoid traces underneath the device body. No solder mask opening or stencil revision is needed if the original SO-8 land pattern follows Vishay's recommended minimum pads (Document 72599).

What is the typical gate threshold voltage range for SI7464DP-T1-E3?

The SI7464DP-T1-E3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V, measured at V_DS = V_GS and I_D = 250 µA. This tightly distributed threshold ensures predictable turn-on behavior across temperature and unit-to-unit variation, supporting reliable operation with 5 V logic-level gate drivers and eliminating need for level-shifting in many auxiliary supply designs.

How does the PowerPAK® SO-8 package improve thermal performance compared to standard SO-8?

SI7464DP-T1-E3's PowerPAK® SO-8 achieves R_thJC = 2.9 °C/W (typ.), versus ~16 °C/W for standard SO-8-reducing junction-to-board thermal resistance by over 80%. This is enabled by the exposed drain pad directly bonded to PCB copper, eliminating leadframe thermal bottlenecks. In practice, this allows SI7464DP-T1-E3 to run ~40 °C cooler than an equivalently rated SO-8 MOSFET dissipating 2.7 W on the same board.

SI7464DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 240mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7464DP-T1-E3 FAQ

1.How can I place an order for SI7464DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7464DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7464DP-T1-E3 reliable?

The price and inventory of SI7464DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7464DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7464DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7464DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7464DP-T1-E3?

SI7464DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7464DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7464DP-T1-E3?

For technical support, including SI7464DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7464DP-T1-E3 requirements.

6.How does Aetrix verify that SI7464DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7464DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7464DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7464DP-T1-E3?

All SI7464DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7464DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7464DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7464DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …