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Vishay Siliconix SI7464DP-T1-GE3
- Part No.:
- SI7464DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7464DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 200V 1.8A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,930
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Product details
Overview
SI7464DP-T1-GE3 from Vishay Siliconix is an N-channel 200 V (D-S) fast-switching power MOSFET in PowerPAK® SO-8 package, with RDS(on) = 0.195 Ω (typ.) at VGS = 10 V and ID = 2.8 A, Qg = 12 nC (typ.), and optimized for primary-side switching in offline SMPS topologies.
For engineers reviewing the SI7464DP-T1-GE3 datasheet, SI7464DP-T1-GE3 pinout, SI7464DP-T1-GE3 application, or SI7464DP-T1-GE3 equivalent, key selection criteria include its 200 V VDS, low thermal resistance (RthJC = 2.9 °C/W), leadless PowerPAK SO-8 footprint compatibility with standard SO-8 layouts, and PWM-optimized dynamic performance for high-efficiency flyback and LLC converters.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance and fast switching, with gate charge parameters (Qg = 12 nC, Qgd = 3.8 nC) enabling efficient operation at 100–500 kHz in hard-switched topologies. Its 200 V rating supports universal-input offline applications up to 265 VAC.
The PowerPAK SO-8 package features exposed drain pads on the bottom surface for direct thermal conduction to PCB copper, delivering junction-to-case thermal resistance of 2.9 °C/W - comparable to DPAK - while maintaining SO-8 footprint compatibility and 1.07 mm profile for space-constrained designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports universal AC input (85–265 VAC) with margin for voltage spikes in primary-side switch applications |
| RDS(on) max @ VGS = 10 V | 0.24 Ω - ensures low conduction loss at full load in 2.8 A continuous drain current operation |
| Qg typ. | 12 nC - enables fast turn-on/turn-off with moderate gate drive strength, reducing switching losses in PWM-controlled converters |
| ID continuous @ TJ = 150 °C | 2.8 A - defines maximum steady-state current capability under thermal-limited conditions on FR4 board |
| RthJC max | 3.5 °C/W - allows direct thermal path from die to PCB copper, supporting >2 W dissipation with minimal ΔTJ–board |
| VGS(th) | 2–4 V - ensures reliable enhancement-mode turn-on with standard 5 V or 10 V gate drivers |
| tr/tf | 12–20 ns / 15–25 ns - supports high-frequency switching with controlled EMI and reduced overlap loss |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, 5.15 mm × 6.15 mm × 1.07 mm), thermally enhanced with exposed drain pad on bottom surface. Compatible with standard SO-8 land patterns; requires extended drain copper area for optimal thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal MOSFET die; electrically tied together and bonded to bottom-source pad |
| 5, 6, 7, 8 | Drain (D) | High-voltage drain terminals; all connected to large exposed copper pad on package underside for thermal and current handling |
| Gate (G) | Gate (G) | Single gate terminal at Pin 1 (top view labeling per datasheet); controls channel conduction with ±20 V max rating |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers 0.195 Ω RDS(on) at 10 V drive while maintaining rugged 200 V breakdown for high-voltage switching reliability |
| PowerPAK® SO-8 package | Enables drop-in replacement on SO-8 footprints with 3× lower RthJC than standard SO-8, improving thermal headroom without layout change |
| PWM-optimized switching | Qgd/Qgs ratio of ~1.5 ensures stable Miller plateau behavior and robust dv/dt immunity in hard-switched converters |
| Lead (Pb)-free & halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709E requirements for environmentally compliant manufacturing |
| 100 % Rg tested | Guarantees gate resistance ≤2.5 Ω, ensuring consistent turn-on timing and predictable drive loop behavior |
Applications
| Offline Flyback Converters | LLC Resonant Converters |
|---|---|
Use Scenario: Primary-side high-voltage switch in 12–65 W AC/DC adapters and auxiliary power supplies. IC Role / Device Role / Timing Role: Main power switch synchronizing with controller IC (e.g., UC384x, VIPer, or digital PWM IC) at 65–130 kHz. Use Value: Low Qg and fast tr/tf reduce switching loss by ≥15 % vs. legacy SO-8 MOSFETs at same RDS(on), improving efficiency at light-to-full load. | Use Scenario: High-side switching element in resonant half-bridge LLC stages for server PSUs and industrial power modules. IC Role / Device Role / Timing Role: Hard-commutated switch operating at 200–500 kHz with zero-voltage switching (ZVS) assist. Use Value: 200 V rating and low Ciss/Coss enable reliable ZVS initiation across wide input range; RthJC = 2.9 °C/W sustains 2.8 A continuous current at Tboard = 85 °C. |
| Industrial AC-DC Power Supplies | LED Driver Primary Switches |
Use Scenario: Primary switch in 30–100 W open-frame power supplies for PLCs, HMIs, and motor drives. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by isolated gate driver (e.g., Si823x) in discontinuous conduction mode (DCM). Use Value: Avalanche energy rating (EAS = 0.45 mJ) provides robustness against inductive kickback during overcurrent events without external snubbers. | Use Scenario: Primary-side switch in constant-current LED drivers for street lighting and high-bay fixtures. IC Role / Device Role / Timing Role: High-voltage switching transistor in quasi-resonant (QR) flyback topology operating up to 265 VAC input. Use Value: VDS = 200 V with 1.5× safety margin ensures long-term reliability under surge conditions (IEC 61000-4-5 Level 3); low RDS(on) minimizes conduction loss at 2.8 A peak LED current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK20Z | TO-92 package, RDS(on) = 3.5 Ω (max), 2 A ID, no Qg spec - significantly higher conduction loss and thermal resistance | Suitable only for low-power (<5 W), non-isolated DC/DC; not viable for primary-side SMPS above 10 W | Select only if cost sensitivity outweighs efficiency and thermal constraints; requires new PCB layout and heatsinking |
| IRF640NPBF | TO-220 package, RDS(on) = 0.18 Ω (max), 18 A ID, Qg = 67 nC - higher gate charge increases switching loss at >100 kHz | Better for high-current linear or low-frequency switching; less suitable for compact, high-frequency flyback designs | Prefer when board space allows TO-220 mounting and gate drive can support 67 nC; avoid in space-constrained or high-frequency applications |
Compared with STP2NK20Z and IRF640NPBF, SI7464DP-T1-GE3 delivers optimal balance of low RDS(on), low Qg, and ultra-low-profile PowerPAK SO-8 packaging - enabling higher power density, better thermal management, and direct SO-8 footprint compatibility without sacrificing 200 V ruggedness.
Availability
SI7464DP-T1-GE3 is available at Aetrix Electronics and suitable for offline flyback converters, LLC resonant power supplies, industrial AC-DC modules, and LED driver primary switches requiring stable component supply and long-term manufacturability.
Supply support for SI7464DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7464DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-voltage primary-side switching in compact, high-efficiency AC/DC power conversion systems.
FAQ
What is the maximum continuous drain current for SI7464DP-T1-GE3 at 70 °C ambient temperature?
The SI7464DP-T1-GE3 supports 2.2 A continuous drain current at TA = 70 °C (steady state, mounted on 1" × 1" FR4 board). This value reflects thermal derating due to reduced heat dissipation at elevated ambient; actual current capability depends on PCB copper area and airflow. The SI7464DP-T1-GE3 datasheet specifies this limit in the Absolute Maximum Ratings table under "Continuous drain current (TJ = 150 °C)".
Does SI7464DP-T1-GE3 support avalanche energy handling, and what is its rated single-pulse value?
Yes, SI7464DP-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 0.45 mJ, guaranteed by design per datasheet Section 1. This capability enables robust operation during transient overvoltage events in flyback and forward converters without requiring external clamping circuits. The SI7464DP-T1-GE3 avalanche current (IAS) is specified at 3 A.
Can SI7464DP-T1-GE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?
Yes, SI7464DP-T1-GE3 uses the same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8 packages, allowing direct placement on legacy SO-8 land patterns. However, optimal thermal performance requires extending the drain copper area beyond the minimum pad pattern - the SI7464DP-T1-GE3 benefits from ≥0.3 in² spreading copper for lowest RthJA.
What is the gate threshold voltage range for SI7464DP-T1-GE3, and how does it affect drive compatibility?
The SI7464DP-T1-GE3 has a gate threshold voltage (VGS(th)) range of 2–4 V at ID = 250 μA, confirming reliable turn-on with 5 V logic-level drivers and full enhancement at 10 V. This ensures compatibility with common PWM controllers (e.g., UC3842, TL494) and isolated gate drivers without level-shifting. The SI7464DP-T1-GE3 remains fully enhanced across its specified VGS operating range.
Is SI7464DP-T1-GE3 suitable for use in automotive applications?
No, SI7464DP-T1-GE3 is not qualified to AEC-Q101 or automotive-grade reliability standards. It is designed for industrial, commercial, and consumer power supply applications. For automotive use, Vishay offers AEC-Q101-qualified alternatives such as the SQJQ440E - the SI7464DP-T1-GE3 should not be deployed in safety-critical or temperature-cycled automotive environments without additional qualification.
SI7464DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7464DP-T1-GE3 FAQ
1.How can I place an order for SI7464DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7464DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7464DP-T1-GE3 reliable?
The price and inventory of SI7464DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7464DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7464DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7464DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7464DP-T1-GE3?
SI7464DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7464DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7464DP-T1-GE3?
For technical support, including SI7464DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7464DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7464DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7464DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7464DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7464DP-T1-GE3?
All SI7464DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7464DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7464DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7464DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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