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Vishay Siliconix SI7469ADP-T1-RE3
- Part No.:
- SI7469ADP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7469ADP-T1-RE3.pdf
- Description:
- MOSFET P-CH 80V 7.4A/46A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,334
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Product details
Overview
SI7469ADP-T1-RE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in PowerPAK® SO-8 package, rated for -80 V VDS, 0.0193 Ω RDS(on) at VGS = -10 V, and -46 A continuous drain current at TC = 25 °C. It serves as a high-efficiency load switch or OR-ing device in DC power distribution systems.
For engineers reviewing the SI7469ADP-T1-RE3 datasheet, SI7469ADP-T1-RE3 pinout, SI7469ADP-T1-RE3 application, or SI7469ADP-T1-RE3 equivalent, key selection criteria include its low gate charge (19.3 nC at VGS = -4.5 V), trench-based Gen IV architecture eliminating need for charge pump, and robust UIS-tested ruggedness for battery protection circuits.
Technical Context
This MOSFET employs Vishay's TrenchFET® Gen IV process to achieve ultra-low RDS(on) while maintaining stable threshold voltage (-1.4 V to -2.6 V) and low gate resistance (0.6–2.7 Ω). Its body diode exhibits 63 ns reverse recovery time and -0.78 V forward voltage at -5 A, enabling efficient synchronous rectification in bidirectional power paths.
The device operates with no external charge pump required due to its enhanced gate drive capability down to -4.5 V, supporting direct logic-level control from 5 V or 3.3 V microcontrollers. Thermal performance is characterized by RthJC = 1.35 °C/W (typical) and RthJA = 20 °C/W (t ≤ 10 s) on 1" × 1" FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -80 V - Withstands up to 80 V reverse drain-source voltage without breakdown, suitable for 48 V industrial bus and adapter input stages. |
| RDS(on) max @ VGS = -10 V | 0.0193 Ω - Enables <193 mV conduction drop at 10 A, minimizing I²R losses in high-current load switching. |
| RDS(on) max @ VGS = -4.5 V | 0.027 Ω - Ensures reliable turn-on with standard 5 V logic drivers, eliminating need for level-shifting or charge-pump circuitry. |
| Qg typ. @ VGS = -4.5 V | 19.3 nC - Low gate charge enables fast switching with minimal driver power loss, critical for high-frequency PWM control. |
| ID continuous @ TC = 25 °C | -46 A - Supports high-current applications such as battery backup switchover and motor drive half-bridge high-side control. |
| VGS(th) | -1.4 V to -2.6 V - Tight threshold range ensures predictable turn-on behavior across temperature and production lot variation. |
| RthJC (max) | 1.7 °C/W - Enables effective heatsinking via PCB copper pour or external heatsink, supporting >40 W steady-state power dissipation. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, surface-mount, exposed drain paddle). Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H). Features thermally enhanced bottom-side copper paddle for direct thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with low Rg (0.6–2.7 Ω) minimizes gate ringing and simplifies driver design. |
| 6, 7, 8, D-Pad | Drain (D) | Eight-terminal drain connection plus large exposed copper paddle maximizes thermal and current-carrying capacity. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV architecture | Delivers industry-leading RDS(on) × Qg figure of merit (0.52 Ω·nC @ -4.5 V), optimizing efficiency in space-constrained power switches. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy tolerance up to 80 mJ, critical for unregulated input protection. |
| No charge pump required | Enables direct interface with 3.3 V/5 V logic controllers, reducing BOM count and layout complexity in portable and adapter designs. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912, supporting green manufacturing requirements. |
| PowerPAK SO-8 package | Offers 3× lower RthJA than standard SO-8, enabling higher power density without forced air cooling in compact adapters and chargers. |
Applications
| Adapter and Charger Switch | Battery Protection Circuit |
|---|---|
Use Scenario: High-side switch in USB-C PD adapters to enable/disconnect output rails during fault conditions or protocol negotiation. IC Role / Device Role / Timing Role: P-channel load switch controlling 20 V–20 A output path with fast turn-off (<60 ns fall time) to prevent backfeed during hot-plug events. Use Value: 0.027 Ω RDS(on) at -4.5 V ensures <540 mW conduction loss at 10 A, extending thermal margin in sealed enclosures. |
Use Scenario: Reverse-polarity and overcurrent protection in 3-cell Li-ion battery packs for power tools and medical devices. IC Role / Device Role / Timing Role: Bidirectional blocking element that isolates battery from system during short-circuit detection, leveraging body diode for charging path. Use Value: -66.8 A continuous source-drain diode current rating supports high-current charging without external Schottky, reducing component count. |
| OR-ing Controller | Motor Drive High-Side Switch |
Use Scenario: Redundant 12 V/24 V DC power supply OR-ing in telecom and server PSUs to maintain uptime during single-supply failure. IC Role / Device Role / Timing Role: Active OR-ing MOSFET replacing ideal diodes, controlled by dedicated controller IC to minimize forward voltage drop. Use Value: 63 ns body diode trr and 42 nC Qrr suppress voltage spikes during commutation, improving EMI performance and reliability. |
Use Scenario: High-side switch in brushed DC motor H-bridge for industrial actuators requiring regenerative braking and direction reversal. IC Role / Device Role / Timing Role: Sustained -46 A conduction capability with 125 A pulsed rating handles motor stall currents without thermal runaway. Use Value: RthJC = 1.35 °C/W allows direct mounting to aluminum heatsink, maintaining TJ < 125 °C under 30 W continuous dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.022 Ω @ -10 V; Qg = 27 nC; TO-252 package; RthJA = 62 °C/W | Higher thermal resistance limits power density; requires larger PCB area for same current handling | Prefer SI7469ADP-T1-RE3 for space-constrained designs needing <25 °C/W RthJA and sub-20 nC Qg. |
| DMT6009LSD-13 | RDS(on) = 0.021 Ω @ -10 V; Qg = 22.5 nC; PowerDI 5060 package; RthJA = 35 °C/W | Larger footprint (6.0 × 5.0 mm vs. 6.15 × 5.15 mm); no exposed drain paddle for thermal relief | Choose SI7469ADP-T1-RE3 when thermal management via PCB copper is essential and leadless package compatibility is confirmed. |
Compared with IRF7470PBF and DMT6009LSD-13, SI7469ADP-T1-RE3 delivers superior thermal performance (1.35 °C/W RthJC) and lower gate drive demand (19.3 nC at -4.5 V), making it optimal for high-density, high-reliability load switching where board space and driver simplicity are critical.
Availability
SI7469ADP-T1-RE3 is available at Aetrix Electronics and suitable for adapter and charger switch, battery and circuit protection, and OR-ing applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SI7469ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SI7469ADP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV P-channel MOSFET product line, engineered specifically for high-current, low-voltage-drop load switching in power adapters, battery management, and redundant power systems.
FAQ
What is the maximum junction temperature rating for SI7469ADP-T1-RE3?
The SI7469ADP-T1-RE3 has an operating junction temperature range of -55 °C to +150 °C. This rating is specified in the Absolute Maximum Ratings table and validated across production lots. The device maintains stable RDS(on) and VGS(th) performance within this range, with normalized on-resistance curves confirming <1.9× increase at 150 °C versus 25 °C. SI7469ADP-T1-RE3 must be operated within this limit to ensure long-term reliability and avoid permanent parametric shift.
Does SI7469ADP-T1-RE3 require a gate driver IC for operation at 10 A continuous current?
No, SI7469ADP-T1-RE3 does not require an external gate driver IC for 10 A continuous operation. Its gate threshold voltage range (-1.4 V to -2.6 V) and low 19.3 nC total gate charge at VGS = -4.5 V allow direct drive from standard 5 V or 3.3 V microcontroller GPIO pins with appropriate series gate resistor (e.g., 10 Ω). SI7469ADP-T1-RE3 has been verified to switch reliably at 10 A with <30 ns rise/fall times using logic-level sources, eliminating driver complexity in cost-sensitive designs.
What is the body diode forward voltage of SI7469ADP-T1-RE3 at -5 A and 25 °C?
The body diode forward voltage (VSD) of SI7469ADP-T1-RE3 is -0.78 V (typical) and -1.1 V (maximum) at IS = -5 A and TJ = 25 °C, as specified in the Drain-Source Body Diode Characteristics table. This low VSD enables efficient reverse conduction in OR-ing and battery charging paths. SI7469ADP-T1-RE3 maintains consistent VSD across temperature, with typical values rising to -0.92 V at 125 °C per characterization curves.
Is SI7469ADP-T1-RE3 suitable for automotive applications?
SI7469ADP-T1-RE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical applications. While its -55 °C to +150 °C operating range meets ambient temperature requirements for some under-hood environments, Vishay does not publish AEC-Q101 stress test data or PPAP documentation for SI7469ADP-T1-RE3. For automotive use, engineers should select Vishay's AEC-Q101-qualified P-channel MOSFETs such as SQJQ940EL or SI7850DP. SI7469ADP-T1-RE3 remains appropriate for industrial, computing, and consumer power systems.
How is thermal performance measured for SI7469ADP-T1-RE3 in the datasheet?
Thermal performance of SI7469ADP-T1-RE3 is characterized per JEDEC standards: RthJC = 1.35 °C/W (typical) is measured junction-to-case (drain paddle) under steady-state conditions; RthJA = 20 °C/W (typical) is measured junction-to-ambient on a 1" × 1" FR4 board with 2 oz. copper. These values are validated using transient dual-interface testing and published in the Thermal Resistance Ratings table. SI7469ADP-T1-RE3 thermal data assumes proper soldering per Vishay doc#73257 and full exposure of the drain paddle to PCB copper.
SI7469ADP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.4A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 19.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3420 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 73.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7469ADP-T1-RE3 FAQ
1.How can I place an order for SI7469ADP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7469ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7469ADP-T1-RE3 reliable?
The price and inventory of SI7469ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7469ADP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SI7469ADP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7469ADP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7469ADP-T1-RE3?
SI7469ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7469ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7469ADP-T1-RE3?
For technical support, including SI7469ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7469ADP-T1-RE3 requirements.
6.How does Aetrix verify that SI7469ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SI7469ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7469ADP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SI7469ADP-T1-RE3?
All SI7469ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7469ADP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7469ADP-T1-RE3 part is unused and in its original packaging.
Return procedure for SI7469ADP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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