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Vishay Siliconix SI7613DN-T1-GE3
- Part No.:
- SI7613DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7613DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 35A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:51,564
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Product details
Overview
SI7613DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in space-constrained DC/DC and power management circuits. It features -20 V drain-source rating, 8.7 mΩ RDS(on) at VGS = -10 V, -35 A continuous drain current (TC = 25 °C), and PowerPAK® 1212-8 surface-mount package with 1.07 mm profile - enabling compact notebook PC power rails and adapter switches.
For engineers reviewing the SI7613DN-T1-GE3 datasheet, SI7613DN-T1-GE3 pinout, SI7613DN-T1-GE3 application, or SI7613DN-T1-GE3 equivalent, key selection criteria include verified RDS(on) at -4.5 V (-14.0 mΩ), total gate charge (28.1 nC at VGS = -4.5 V), thermal resistance (RthJC = 1.9 °C/W), body diode recovery (trr = 32 ns), and PowerPAK 1212-8 land pattern compatibility for thermal optimization.
Technical Context
This P-channel MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching in a leadless PowerPAK 1212-8 package. Its gate threshold voltage range (-1.0 V to -2.2 V) ensures reliable turn-on with standard logic-level gate drivers, while the 100 % Rg tested specification guarantees consistent gate drive timing across production lots.
The device integrates a robust intrinsic body diode with VSD = -0.8 V at -10 A and Qrr = 20 nC, supporting synchronous rectification and reverse-current protection in buck converters and hot-swap circuits. Thermal design leverages the exposed-drain pad for direct board heat sinking, achieving RthJA = 26 °C/W on 1" × 1" FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 12 V and 19 V input rail protection and load switching |
| RDS(on) max @ VGS = -10 V | 8.7 mΩ - Enables ≤ 2.5 W conduction loss at 17 A continuous current |
| RDS(on) max @ VGS = -4.5 V | 14.0 mΩ - Confirmed operation with 4.5 V logic-level gate drive in battery-powered systems |
| Qg typ. @ VGS = -4.5 V | 28.1 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength |
| ID continuous @ TC = 25 °C | -35 A - Package-limited current handling without external heatsink |
| RthJC max | 2.4 °C/W - Enables precise junction temperature estimation using case temperature measurement |
| trr (body diode) | 32 ns - Minimizes reverse-recovery losses in synchronous buck topologies |
Pinout & Package
SI7613DN-T1-GE3 is housed in a leadless PowerPAK® 1212-8 single configuration (3.3 mm × 3.3 mm footprint, 1.07 mm height) with exposed drain pad on bottom side for thermal conduction. The package complies with JEDEC MS-012 standards and supports Pb-free reflow per IPC/JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with 0.4–3.8 Ω gate resistance - compatible with standard MOSFET drivers without external gate resistor |
| 6, 7, 8, D-Pad | Drain (D) | Four drain leads + large bottom-exposed copper pad provide ultra-low thermal resistance (RthJC = 1.9 °C/W) and high-current path |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency DC/DC efficiency |
| PowerPAK® 1212-8 package | 40 % smaller footprint than TSSOP-8 with 20× lower RthJA - enables PCB area reduction without thermal penalty |
| 100 % Rg tested | Ensures gate drive timing consistency across production lots - critical for multi-phase synchronous designs |
| Exposed drain pad | Provides direct thermal path to PCB copper - eliminates need for thermal vias in basic layouts |
| Body diode Qrr = 20 nC | Reduces switching losses in freewheeling paths compared to standard P-channel MOSFETs |
Applications
| High-Efficiency Notebook Load Switch | USB-C PD Adapter Secondary-Side Switch |
|---|---|
|
Use Scenario: Hot-swap control of CPU core voltage rail during system boot and sleep transitions. IC Role / Device Role / Timing Role: P-channel high-side load switch managing inrush current and fault isolation. Use Value: 8.7 mΩ RDS(on) limits voltage drop to < 174 mV at 20 A, preserving tight 0.8–1.2 V output regulation. |
Use Scenario: Output synchronous rectification in 20 V/3 A USB-C power adapter secondary stage. IC Role / Device Role / Timing Role: Low-loss P-channel switch replacing Schottky diode in flyback or LLC topology. Use Value: 32 ns body diode trr and 20 nC Qrr cut reverse-recovery losses by >40 % vs. discrete diode solution. |
| Industrial 24 V DC Power Distribution | Smartphone Fast-Charging Protection Circuit |
|
Use Scenario: Redundant 24 V supply OR-ing and overcurrent protection in PLC I/O modules. IC Role / Device Role / Timing Role: High-current P-channel back-to-back switch for bidirectional fault blocking. Use Value: -35 A continuous rating at TC = 25 °C supports 50 W+ distribution with < 1.5 W conduction loss. |
Use Scenario: Input overvoltage and reverse-polarity protection between USB-C port and battery charging IC. IC Role / Device Role / Timing Role: Logic-level controlled P-channel switch activated by system supervisor IC. Use Value: -2.2 V VGS(th) max ensures full enhancement at 3.3 V GPIO, eliminating need for level-shifting circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7606TRPBF | RDS(on) = 12.5 mΩ @ -4.5 V; Qg = 32 nC; SO-8 package (RthJA = 50 °C/W) | Higher thermal resistance requires larger PCB copper or heatsink for same power dissipation | Choose when SO-8 footprint compatibility is required and thermal budget allows higher junction rise |
| DMN3022LSD-13 | RDS(on) = 11.5 mΩ @ -4.5 V; Qg = 22 nC; PowerDI™ 3333 package (RthJC = 2.5 °C/W) | Slightly higher RDS(on) but lower Qg favors very high-frequency (>2 MHz) operation | Prefer for ultra-thin portable designs where 0.9 mm height is critical and 11.5 mΩ is acceptable |
Compared with IRF7606TRPBF and DMN3022LSD-13, SI7613DN-T1-GE3 delivers the lowest RDS(on) at -4.5 V in its class and the best thermal performance via PowerPAK 1212-8, making it optimal for thermally constrained 12–20 V load-switch applications requiring ≤ 14 mΩ on-resistance.
Availability
SI7613DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power rails, USB-C PD adapter secondary-side switching, and industrial 24 V DC distribution requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SI7613DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SI7613DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® portfolio, engineered specifically for high-current, low-voltage load switching in space- and thermally-constrained computing and adapter applications.
FAQ
What is the maximum gate-source voltage rating for SI7613DN-T1-GE3?
The absolute maximum VGS rating for SI7613DN-T1-GE3 is ±16 V. Exceeding this voltage risks permanent gate oxide damage. In normal operation, gate drive should be limited to -10 V for full enhancement or -4.5 V for logic-level compatibility. The device's VGS(th) range (-1.0 V to -2.2 V) ensures reliable turn-on within these limits. Always observe layout practices that minimize gate ringing to prevent transient overshoot beyond ±16 V.
Does SI7613DN-T1-GE3 require a gate resistor in typical load-switch applications?
SI7613DN-T1-GE3 does not require an external gate resistor for basic load-switch operation due to its tested Rg range (0.4–3.8 Ω) and low Qg (28.1 nC at -4.5 V). However, a 5–10 Ω series resistor is recommended to dampen gate oscillation in high-di/dt environments or when driving from weak GPIO sources. This improves EMI performance and prevents false triggering without compromising turn-on speed in most 100–500 kHz applications.
Can SI7613DN-T1-GE3 be used in synchronous rectification topologies?
Yes, SI7613DN-T1-GE3 is suitable for synchronous rectification in buck, flyback, and LLC converters due to its low RDS(on) (8.7 mΩ at -10 V), fast body diode (trr = 32 ns), and low Qrr (20 nC). Its P-channel configuration simplifies gate drive in low-side synchronous rectifier positions. For high-side synchronous rectification, ensure gate drive voltage remains ≥ |VGS(th)| above source potential - typically requiring a charge pump or bootstrap circuit for >10 V operation.
What is the recommended PCB land pattern for SI7613DN-T1-GE3 PowerPAK 1212-8 package?
The recommended minimum land pattern for SI7613DN-T1-GE3 follows Vishay Application Note AN826: drain pad dimensions of 3.86 mm × 2.235 mm (152 mil × 88 mil), with 0.99 mm × 1.725 mm (39 mil × 68 mil) openings for solder paste. Extend the drain copper beyond the pad by ≥ 0.3 in² (193 mm²) to optimize thermal performance - further expansion yields diminishing returns. Use ≥ 6 thermal vias (0.3 mm diameter, 0.6 mm pitch) under the drain pad if internal layers are solid copper planes.
Is SI7613DN-T1-GE3 suitable for automotive applications?
SI7613DN-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical systems. It meets commercial-grade reliability standards (JESD22-A108) and operates across -50 °C to +150 °C junction temperature, making it appropriate for infotainment power supplies and accessory modules where automotive qualification is not mandated. For AEC-Q101-compliant alternatives, consult Vishay's Automotive PowerPAK portfolio - e.g., SI7665DP-T1-GE3.
SI7613DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.7mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 87 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2620 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52.1W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7613DN-T1-GE3 FAQ
1.How can I place an order for SI7613DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7613DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7613DN-T1-GE3 reliable?
The price and inventory of SI7613DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7613DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7613DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7613DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7613DN-T1-GE3?
SI7613DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7613DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7613DN-T1-GE3?
For technical support, including SI7613DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7613DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7613DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7613DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7613DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7613DN-T1-GE3?
All SI7613DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7613DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7613DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7613DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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