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Vishay Siliconix SI7623DN-T1-GE3
- Part No.:
- SI7623DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7623DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 35A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,675
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Product details
Overview
SI7623DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in PowerPAK® 1212-8 package, rated for -20 V drain-source voltage, 35 A continuous drain current at TC = 25 °C, and 3.8 mΩ RDS(on) at VGS = -10 V. It serves as a high-efficiency load switch in battery-powered systems requiring low conduction loss and fast switching.
For engineers reviewing the SI7623DN-T1-GE3 datasheet, SI7623DN-T1-GE3 pinout, SI7623DN-T1-GE3 application, or SI7623DN-T1-GE3 equivalent, key selection criteria include its -20 V VDS, sub-4 mΩ on-resistance at -10 V gate drive, 55.5 nC total gate charge, thermal resistance of 1.9 °C/W (junction-to-case), and compatibility with compact space-constrained PCB layouts using the leadless PowerPAK 1212-8 footprint.
Technical Context
This device employs Vishay's TrenchFET® Gen III process to achieve low RDS(on) and optimized gate charge trade-offs. Its p-channel architecture enables high-side switching without level-shifting circuitry, supporting direct logic-level control from 3.3 V or 5 V microcontrollers when used with appropriate gate drive sequencing.
The PowerPAK 1212-8 package features an exposed drain pad on the bottom surface for ultra-low thermal impedance (RthJC = 1.9 °C/W typical), enabling efficient heat transfer to the PCB copper plane. The device is 100 % Rg and UIS tested, with guaranteed avalanche energy rating of 20 mJ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum reverse drain-source blocking voltage; defines safe operating range in high-side switch configurations. |
| RDS(on) @ VGS = -10 V | 3.8 mΩ max - Enables ≤ 1.5 W conduction loss at 20 A, critical for thermally constrained battery-switch applications. |
| Qg typ. | 55.5 nC - Determines gate drive power requirement and switching speed; supports < 100 ns turn-off delay with 1 Ω driver. |
| ID continuous @ TC = 25 °C | -35 A - Package-limited current capacity; requires adequate PCB copper area for thermal management. |
| RthJC max. | 2.4 °C/W - Junction-to-case thermal resistance; enables direct thermal coupling to heatsink or large copper pour on PCB. |
| VGS(th) | -0.4 V to -1.5 V - Gate threshold range ensures reliable turn-on with standard logic-level gate drivers down to 2.5 V. |
| EAS | 20 mJ - Single-pulse avalanche energy rating; provides robustness against inductive switching transients in load-switch circuits. |
Pinout & Package
SI7623DN-T1-GE3 is housed in a leadless PowerPAK® 1212-8 package (3.3 mm × 3.3 mm × 1.04 mm), featuring an exposed drain pad on the bottom surface for optimal thermal conduction. The top-side terminals are arranged in a single-row configuration with source (S), gate (G), and drain (D) connections distributed across eight terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Common source connection for internal MOSFET die; tied to PCB ground plane for low-inductance return path. |
| 4 | Gate (G) | Control input; requires stable negative bias relative to source to turn on; sensitive to ESD and ringing. |
| 6, 7, 8 | Drain (D) | Main power output node; electrically connected to exposed bottom pad; must be routed to high-current load path. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III process | Delivers industry-leading RDS(on) × Qg figure-of-merit for p-channel devices, reducing both conduction and switching losses. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world load-dump scenarios. |
| Exposed drain pad | Provides direct thermal path from junction to PCB; achieves 1.9 °C/W RthJC, enabling higher power density than SO-8 or TSSOP-8 alternatives. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B; suitable for environmentally regulated industrial and consumer designs. |
| PowerPAK 1212-8 footprint | Offers >40 % smaller area than TSSOP-8 while maintaining superior thermal performance-ideal for ultra-compact portable electronics. |
Applications
| Adapter Switch | Battery Switch |
|---|---|
Use Scenario: Automatic switchover between wall adapter and battery power in portable medical monitors. IC Role / Device Role / Timing Role: High-side p-channel MOSFET controlling power path from adapter to system rail; activated only when adapter is present. Use Value: Eliminates need for external level shifter; 3.8 mΩ RDS(on) limits voltage drop to < 76 mV at 20 A, preserving system efficiency during adapter operation. | Use Scenario: Isolation of lithium-ion battery pack during sleep mode in handheld test equipment. IC Role / Device Role / Timing Role: Load switch disconnecting battery from system load to minimize quiescent current and prevent deep discharge. Use Value: Sub-1 μA IDSS at VGS = 0 V ensures < 10 μA leakage per switch; enables multi-year shelf life without battery protection IC intervention. |
| Charger Switch | Load Switch |
Use Scenario: Reverse-current blocking between USB-C PD charger and system PMIC in ultrabooks. IC Role / Device Role / Timing Role: Back-to-back p-channel switch preventing battery discharge into charger port when system is off. Use Value: -20 V VDS rating accommodates up to ±20 V transient surges on USB-C lines; body diode forward voltage of -0.72 V minimizes forward conduction loss. | Use Scenario: Controlled power-up sequence for FPGA I/O banks in industrial PLC modules. IC Role / Device Role / Timing Role: Sequenced enable switch delivering clean, slew-rate-controlled 3.3 V supply to configurable logic blocks. Use Value: 55.5 nC Qg allows precise timing control via RC gate network; enables < 1 ms controlled ramp-up without inrush current spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar p-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | Lower RDS(on) (2.3 mΩ @ -10 V) but higher Qg (78 nC); same PowerPAK 1212-8 package. | Better conduction efficiency at high current; slower switching due to higher gate charge. | Select when minimizing I²R loss dominates over switching frequency requirements. |
| IRLML6344TRPBF | SO-8 package; higher RDS(on) (5.5 mΩ @ -4.5 V); lower current rating (4.3 A). | Limited to low-power applications; requires larger PCB area and offers inferior thermal performance (RthJC ≈ 50 °C/W). | Choose only if legacy SO-8 footprint compatibility is mandatory and power dissipation remains below 0.5 W. |
Compared with SI7623DN-T1-GE3, Si7157DP-T1-GE3 delivers lower conduction loss but demands more gate drive energy, while IRLML6344TRPBF trades significant thermal and current capability for board-level compatibility-making SI7623DN-T1-GE3 the optimal balance of size, efficiency, and ruggedness for mid-power load switching.
Availability
SI7623DN-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery interfaces, portable medical instrumentation, and industrial IoT edge controllers requiring stable component supply and long-term manufacturability.
Supply support for SI7623DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SI7623DN-T1-GE3 belongs to Vishay's TrenchFET® Gen III p-channel MOSFET product line, engineered specifically for high-efficiency, space-constrained load switching in battery-powered and adapter-fed systems.
FAQ
What is the maximum continuous drain current rating for SI7623DN-T1-GE3 at 70 °C case temperature?
The SI7623DN-T1-GE3 supports -35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with sufficient copper area on the drain pad to maintain case temperature at or below 70 °C under steady-state operation.
Does SI7623DN-T1-GE3 require a gate resistor for stable switching in a 3.3 V logic-controlled load switch?
Yes, SI7623DN-T1-GE3 benefits from a series gate resistor (typically 1–10 Ω) to dampen ringing and control dV/dt during switching. With 55.5 nC total gate charge and low gate resistance (0.4–4 Ω), an external resistor prevents overshoot and ensures clean turn-on/turn-off when driven by 3.3 V microcontroller GPIO pins.
Can SI7623DN-T1-GE3 be used in parallel configurations to increase current handling?
SI7623DN-T1-GE3 can be paralleled, but careful attention to gate drive matching, layout symmetry, and thermal coupling is required. Its negative temperature coefficient of RDS(on) promotes current sharing, yet mismatched trace inductance or thermal gradients may cause imbalance. Derating by ≥20 % per device is recommended for reliable parallel operation.
What is the body diode forward voltage of SI7623DN-T1-GE3 at -4 A source current?
The body diode forward voltage (VSD) of SI7623DN-T1-GE3 is -0.72 V typical and -1.1 V maximum at IS = -4 A and VGS = 0 V, as specified in the Drain-Source Body Diode Characteristics section. This low VSD reduces conduction loss during reverse-current conditions such as USB-C dead-battery charging.
Is SI7623DN-T1-GE3 suitable for automotive applications per AEC-Q101?
No, SI7623DN-T1-GE3 is not AEC-Q101 qualified. It is intended for industrial, computing, and consumer applications. For automotive-grade equivalents, consult Vishay's AEC-Q101-qualified PowerPAK 1212-8 p-channel MOSFETs such as the SQJQ460E, which share similar RDS(on) and package but undergo extended reliability testing.
SI7623DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5460 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7623DN-T1-GE3 FAQ
1.How can I place an order for SI7623DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7623DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7623DN-T1-GE3 reliable?
The price and inventory of SI7623DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7623DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7623DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7623DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7623DN-T1-GE3?
SI7623DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7623DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7623DN-T1-GE3?
For technical support, including SI7623DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7623DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7623DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7623DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7623DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7623DN-T1-GE3?
All SI7623DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7623DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7623DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7623DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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