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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7629DN-T1-GE3

Name: SI7629DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7629DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7629DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7629DN-T1-GE3.pdf

Description:: MOSFET P-CH 20V 35A PPAK1212-8

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Product details

Overview

SI7629DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in space-constrained power management systems. It features -20 V V_DS, 4.6 mΩ R_DS(on) at V_GS = -10 V, -35 A continuous drain current (T_C = 25 °C), 118 nC total gate charge, and PowerPAK® 1212-8 package optimized for thermal performance in battery and adapter switch applications.

For engineers reviewing the SI7629DN-T1-GE3 datasheet, SI7629DN-T1-GE3 pinout, SI7629DN-T1-GE3 application, or SI7629DN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) at -4.5 V gate drive, 100 % R_g and UIS tested reliability, junction-to-case thermal resistance of 1.9 °C/W, and compatibility with lead-free reflow profiles up to 240 °C.

Technical Context

This device uses TrenchFET® Gen III silicon technology to achieve low on-resistance and fast switching with controlled gate charge (Q_g = 118 nC at -10 V, 59 nC at -4.5 V). Its P-channel architecture enables high-side switching without level-shifting circuitry, supporting direct logic-level control from 3.3 V or 5 V microcontrollers.

The PowerPAK 1212-8 package integrates an exposed drain pad for ultra-low thermal impedance (R_thJC = 1.9 °C/W), enabling high-current operation on compact PCBs. The device is rated for -55 °C to +150 °C junction temperature and supports avalanche energy of 20 mJ under single-pulse conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum reverse drain-source voltage before breakdown; suitable for 12 V and 15 V rail switching.
R_DS(on) @ V_GS = -10 V	4.6 mΩ - Enables <1 W conduction loss at 35 A, critical for high-current load switches.
R_DS(on) @ V_GS = -4.5 V	6.2 mΩ - Ensures robust turn-on with standard 3.3 V GPIO, reducing need for gate drivers.
I_D (continuous, T_C = 25 °C)	-35 A - Supports high-power battery disconnect and adaptor hot-swap functions.
Q_g (total)	118 nC @ -10 V - Determines gate drive power and switching speed; lower Q_g improves efficiency in PWM-controlled loads.
R_thJC	1.9 °C/W - Allows >50 W power dissipation with minimal case-to-junction temperature rise when mounted on copper heatsink areas.
V_GS(th)	-0.4 to -1.5 V - Guaranteed turn-on threshold compatible with low-voltage logic, minimizing risk of partial enhancement.

Pinout & Package

SI7629DN-T1-GE3 is housed in the PowerPAK® 1212-8 surface-mount package (3.3 mm × 3.3 mm, 1.05 mm height), featuring an exposed drain pad on the bottom for direct thermal coupling to PCB copper. The package is lead (Pb)-free and halogen-free, qualified for reflow up to 240 °C.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All eight pins connect to internal drain metallization and the exposed bottom pad; provides parallel current paths and low-inductance thermal path to PCB.
4 (Gate)	Gate (G)	Single gate terminal located at position 4 (top row, fourth pad); requires <120 nC charge for full enhancement.
1 (Source)	Source (S)	Source terminal at position 1 (top row, first pad); referenced to system ground in high-side switch configurations.

Key Features

Feature	Design Value
TrenchFET® Gen III process	Delivers 4.6 mΩ R_DS(on) at -10 V in 3.3 mm × 3.3 mm footprint-enabling higher current density than SO-8 or TSSOP-8 alternatives.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and unclamped inductive switching stress-critical for automotive and industrial load dumps.
Exposed drain pad	Reduces R_thJC to 1.9 °C/W, allowing >50 W steady-state dissipation with minimal board copper-ideal for thermally constrained adapters and portable chargers.
Low V_GS(th) range (-0.4 to -1.5 V)	Guarantees reliable turn-on with 3.3 V logic without external level shifters-simplifies control circuitry in USB-C PD and battery management systems.
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020D.1 reflow requirements-ensuring compliance in global consumer and industrial designs.

Applications

Adaptor Switch	Battery Switch
Use Scenario: High-side switching in AC/DC wall adapters to enable/disconnect secondary-side output rails during standby or fault conditions. IC Role / Device Role / Timing Role: P-channel MOSFET acting as a controlled series pass element between input and output, driven directly by microcontroller GPIO. Use Value: 4.6 mΩ R_DS(on) limits no-load power loss to <15 mW at 20 A, extending adapter efficiency across light-load conditions per DOE Level VI standards.	Use Scenario: Isolation of lithium-ion battery packs from system loads during charging, overvoltage, or thermal shutdown events. IC Role / Device Role / Timing Role: Bidirectional load switch controlling current flow between battery terminals and system bus, leveraging integrated body diode for reverse-current blocking. Use Value: -35 A continuous rating and 20 mJ avalanche energy support safe interruption of high-current faults without external protection components.
Load Switch	Hot-Swap Controller Interface
Use Scenario: In-rail power sequencing for FPGA, ASIC, or SoC core supplies where inrush current must be limited and supply voltage ramped controllably. IC Role / Device Role / Timing Role: Main pass transistor in discrete load switch circuit, with gate driven via RC network or dedicated controller to manage dV/dt. Use Value: 6.2 mΩ R_DS(on) at -4.5 V ensures stable regulation even with 3.3 V control signals, eliminating need for gate boost circuits.	Use Scenario: Back-end power switch in hot-swap modules compliant with IEEE 802.3af/at PoE standards, handling 48 V input with precise current limiting. IC Role / Device Role / Timing Role: Primary switching element interfacing with hot-swap controller IC (e.g., LTC4215) to enforce current foldback and soft-start timing. Use Value: 118 nC Q_g enables predictable turn-on delay (<25 ns with 1 Ω driver), supporting tight timing margins required for PoE Class 4–8 detection.

Adaptor Switch

Battery Switch

Use Scenario: High-side switching in AC/DC wall adapters to enable/disconnect secondary-side output rails during standby or fault conditions.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as a controlled series pass element between input and output, driven directly by microcontroller GPIO.

Use Value: 4.6 mΩ R_DS(on) limits no-load power loss to <15 mW at 20 A, extending adapter efficiency across light-load conditions per DOE Level VI standards.

Use Scenario: Isolation of lithium-ion battery packs from system loads during charging, overvoltage, or thermal shutdown events.

IC Role / Device Role / Timing Role: Bidirectional load switch controlling current flow between battery terminals and system bus, leveraging integrated body diode for reverse-current blocking.

Use Value: -35 A continuous rating and 20 mJ avalanche energy support safe interruption of high-current faults without external protection components.

Load Switch

Hot-Swap Controller Interface

Use Scenario: In-rail power sequencing for FPGA, ASIC, or SoC core supplies where inrush current must be limited and supply voltage ramped controllably.

IC Role / Device Role / Timing Role: Main pass transistor in discrete load switch circuit, with gate driven via RC network or dedicated controller to manage dV/dt.

Use Value: 6.2 mΩ R_DS(on) at -4.5 V ensures stable regulation even with 3.3 V control signals, eliminating need for gate boost circuits.

Use Scenario: Back-end power switch in hot-swap modules compliant with IEEE 802.3af/at PoE standards, handling 48 V input with precise current limiting.

IC Role / Device Role / Timing Role: Primary switching element interfacing with hot-swap controller IC (e.g., LTC4215) to enforce current foldback and soft-start timing.

Use Value: 118 nC Q_g enables predictable turn-on delay (<25 ns with 1 Ω driver), supporting tight timing margins required for PoE Class 4–8 detection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SUP53P03-07-E3	-30 V V_DS, 7.0 mΩ R_DS(on) @ -10 V, PowerPAK SO-8 package (5 mm × 6 mm)	Higher voltage rating but larger footprint and 50 % higher R_DS(on); less suitable for space-constrained 12 V systems.	Choose when -30 V blocking is required and board area permits larger package.
IRF7420TRPBF	-20 V V_DS, 5.5 mΩ R_DS(on) @ -10 V, SO-8 package, 2.4 °C/W R_thJC	Same voltage rating but 26 % higher thermal resistance and 15 % higher on-resistance; requires larger heatsinking.	Choose only if SO-8 footprint compatibility is mandatory and thermal budget allows 20 °C higher junction rise.

Compared with SUP53P03-07-E3 and IRF7420TRPBF, SI7629DN-T1-GE3 delivers the lowest R_DS(on) in the smallest footprint with best thermal performance-making it optimal for next-generation compact power delivery where board area and thermal headroom are tightly constrained.

Availability

SI7629DN-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery adaptors, and industrial load-switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI7629DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si7629DN product line belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered specifically for high-current, low-voltage load switching in portable, automotive, and industrial power systems where thermal density and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for SI7629DN-T1-GE3 at 70 °C case temperature?

The SI7629DN-T1-GE3 supports -35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is maintained due to the PowerPAK 1212-8 package's low 1.9 °C/W junction-to-case thermal resistance, enabling high-current operation without derating below ambient temperatures typical in enclosed power adapters.

Does SI7629DN-T1-GE3 require a gate driver when used with a 3.3 V microcontroller?

No, SI7629DN-T1-GE3 does not require an external gate driver with a 3.3 V microcontroller. Its V_GS(th) range of -0.4 V to -1.5 V and R_DS(on) of 6.2 mΩ at V_GS = -4.5 V ensure full enhancement using standard 3.3 V logic levels, eliminating level-shifting complexity in battery protection and USB-C PD designs.

What is the avalanche energy rating of SI7629DN-T1-GE3, and under what conditions is it guaranteed?

The SI7629DN-T1-GE3 is rated for 20 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, as confirmed in the Absolute Maximum Ratings table. This rating is validated through 100 % UIS (unclamped inductive switching) testing per JEDEC JESD22-A110, ensuring robustness in inductive load switching and fault transients.

Can SI7629DN-T1-GE3 be used in hot-swap applications with IEEE 802.3af/at compliance?

Yes, SI7629DN-T1-GE3 is suitable for IEEE 802.3af/at hot-swap applications. Its -20 V V_DS, -35 A current capability, and 118 nC Q_g support precise timing control when paired with hot-swap controllers like the LTC4258, enabling Class 4–8 power classification and inrush current limiting without external current-sense resistors.

What reflow profile should be used for SI7629DN-T1-GE3 during PCB assembly?

SI7629DN-T1-GE3 must be assembled using the lead-free reflow profile specified in Vishay document 73257: peak temperature of 240 °C (+5/−0 °C), time above 180 °C of 70–180 seconds, and maximum ramp-down rate of 6 °C/s. The device is qualified per JEDEC J-STD-020D.1 and supports this profile without degradation to R_DS(on) or gate oxide integrity.

SI7629DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 177 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 5790 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7629DN-T1-GE3 FAQ

1.How can I place an order for SI7629DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7629DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7629DN-T1-GE3 reliable?

The price and inventory of SI7629DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7629DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7629DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7629DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7629DN-T1-GE3?

SI7629DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7629DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7629DN-T1-GE3?

For technical support, including SI7629DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7629DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7629DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7629DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7629DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7629DN-T1-GE3?

All SI7629DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7629DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7629DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7629DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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