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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7633DP-T1-GE3

Name: SI7633DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7633DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7633DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7633DP-T1-GE3.pdf

Description:: MOSFET P-CH 20V 60A PPAK SO-8

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Product details

Overview

SI7633DP-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for -20 V drain-source voltage, 0.0033 Ω R_DS(on) at V_GS = -10 V, and -60 A continuous drain current at T_C = 25 °C. It delivers high-current switching in adapter switch applications with robust avalanche capability (31 mJ) and 100 % UIS tested reliability.

For engineers reviewing the SI7633DP-T1-GE3 datasheet, SI7633DP-T1-GE3 pinout, SI7633DP-T1-GE3 application, or SI7633DP-T1-GE3 equivalent, this page provides verified package mapping, thermal resistance data (R_thJC = 0.9 °C/W), gate charge (Q_g = 85 nC typ. at V_GS = -4.5 V), body diode recovery (t_rr = 65 ns), and validated alternative part options for high-side load switching designs.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance and high current density in a leadless surface-mount package. Its gate threshold voltage range (-1 V to -3 V) enables reliable turn-on with standard logic-level drive, while the integrated source-drain body diode supports synchronous rectification and reverse current handling.

The PowerPAK SO-8 footprint matches standard SO-8 pinout but replaces leads with exposed copper drain pads for direct board thermal coupling. Junction-to-case thermal resistance is 0.9 °C/W (typ.), enabling high-power operation without external heatsinks when mounted on adequate copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for high-side adapter switch configurations
R_DS(on) max @ V_GS = -10 V	0.0033 Ω - Enables <100 mW conduction loss at 60 A, critical for efficiency in compact adapters
R_DS(on) max @ V_GS = -4.5 V	0.0055 Ω - Ensures low-loss operation with 5 V logic-level gate drive
Q_g typ.	85 nC - Determines gate driver sizing and switching loss in hard-switched DC/DC stages
I_D continuous @ T_C = 25 °C	-60 A - Supports high-current adapter output rails without derating under heatsinked conditions
E_AS	31 mJ - Confirmed single-pulse avalanche energy rating for robustness during inductive turn-off
R_thJC max	1.2 °C/W - Enables precise junction temperature estimation for thermal design and lifetime modeling

Pinout & Package

SI7633DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.04 mm), with exposed drain terminals on the bottom side for low-thermal-resistance PCB mounting. The top-side pinout follows standard SO-8 numbering, with pins 1–4 and 5–8 assigned as source, gate, and drain terminals respectively.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5	Source (S)	Common source connection for internal parallel FET cells; electrically tied to substrate ground reference
4	Gate (G)	Control terminal requiring ≤ ±20 V bias; 1.5 Ω gate resistance limits ringing in high-dV/dt environments
6, 7, 8	Drain (D)	High-current output node; bottom-side exposed copper pad forms primary thermal path to PCB

Key Features

Feature	Design Value
TrenchFET® process technology	Enables 0.0027 Ω typical R_DS(on) at -10 V, reducing conduction losses by >30 % vs. planar P-channel equivalents
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching stress without derating in adapter primary-side snubbers
PowerPAK® SO-8 package	Provides DPAK-equivalent thermal performance (R_thJC = 0.9 °C/W) in SO-8 footprint, eliminating PCB redesign for legacy layouts
Low Q_gd/Q_gs ratio	37 nC / 24 nC = 1.54 - Improves hard-switching EMI behavior and reduces Miller-induced shoot-through risk
Body diode t_rr = 65 ns	Supports moderate-frequency synchronous rectification in buck-derived adapter topologies without external Schottky assist

Applications

Adapter Switch	Hot-Swap Controller
Use Scenario: High-current USB-C PD adapter output stage with overvoltage/overcurrent protection. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as main power switch controlled by dedicated hot-swap IC. Use Value: 0.0055 Ω R_DS(on) at -4.5 V ensures <200 mW loss at 20 A, maintaining adapter efficiency above 94 % at full load.	Use Scenario: Backplane power sequencing in industrial PLC modules with inrush current limiting. IC Role / Device Role / Timing Role: Load switch isolating downstream 12 V rail during insertion/removal of field I/O cards. Use Value: -60 A rating and 31 mJ E_AS withstand repeated hot-plug events with no degradation under 100 A surge conditions.
Redundant Power OR-ing	Reverse Polarity Protection
Use Scenario: Dual-input 24 V DC power supply for telecom shelf with automatic source selection. IC Role / Device Role / Timing Role: P-channel MOSFET used in ideal diode configuration to replace Schottky diodes in OR-ing circuit. Use Value: Body diode forward voltage of -0.74 V (at -5 A) and fast t_rr = 65 ns minimize conduction loss and reverse recovery spikes.	Use Scenario: Input protection for battery-powered medical sensor nodes accepting external 5 V charging. IC Role / Device Role / Timing Role: High-side P-MOSFET placed between connector and system rail to block reverse current flow. Use Value: -20 V V_DS rating provides 100 % margin against 5 V input transients; 0.0033 Ω R_DS(on) adds <10 mΩ series resistance to protected rail.

Adapter Switch

Hot-Swap Controller

Use Scenario: High-current USB-C PD adapter output stage with overvoltage/overcurrent protection.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as main power switch controlled by dedicated hot-swap IC.

Use Value: 0.0055 Ω R_DS(on) at -4.5 V ensures <200 mW loss at 20 A, maintaining adapter efficiency above 94 % at full load.

Use Scenario: Backplane power sequencing in industrial PLC modules with inrush current limiting.

IC Role / Device Role / Timing Role: Load switch isolating downstream 12 V rail during insertion/removal of field I/O cards.

Use Value: -60 A rating and 31 mJ E_AS withstand repeated hot-plug events with no degradation under 100 A surge conditions.

Redundant Power OR-ing

Reverse Polarity Protection

Use Scenario: Dual-input 24 V DC power supply for telecom shelf with automatic source selection.

IC Role / Device Role / Timing Role: P-channel MOSFET used in ideal diode configuration to replace Schottky diodes in OR-ing circuit.

Use Value: Body diode forward voltage of -0.74 V (at -5 A) and fast t_rr = 65 ns minimize conduction loss and reverse recovery spikes.

Use Scenario: Input protection for battery-powered medical sensor nodes accepting external 5 V charging.

IC Role / Device Role / Timing Role: High-side P-MOSFET placed between connector and system rail to block reverse current flow.

Use Value: -20 V V_DS rating provides 100 % margin against 5 V input transients; 0.0033 Ω R_DS(on) adds <10 mΩ series resistance to protected rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7446DP-T1-GE3	R_DS(on) = 0.0045 Ω @ -10 V; lower Q_g (62 nC); same PowerPAK SO-8 package	Better suited for higher-frequency (>500 kHz) adapter control where gate drive loss dominates	Select when optimizing for switching loss over conduction loss, especially with limited gate drive strength
IRF7425PbF	Standard SO-8 package; R_DS(on) = 0.0055 Ω @ -10 V; R_thJC = 16 °C/W (vs. 0.9 °C/W)	Requires heatsinking above 10 A; unsuitable for compact sealed adapters	Only consider for cost-sensitive, low-power (<15 A), non-thermally-constrained legacy designs

Compared with Si7446DP-T1-GE3, SI7633DP-T1-GE3 offers lower R_DS(on) for reduced conduction loss at high current, while IRF7425PbF trades thermal performance for broader distributor availability-neither is pin-compatible due to differing thermal pad layout and solder mask requirements.

Availability

SI7633DP-T1-GE3 is available at Aetrix Electronics and suitable for adapter switch, hot-swap controller, redundant power OR-ing, and reverse polarity protection applications requiring stable component supply across automotive infotainment, industrial PLC, and medical sensor platforms.

Supply support for SI7633DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7633DP-T1-GE3 belongs to Vishay's TrenchFET® P-channel PowerPAK® SO-8 family, engineered for high-current, space-constrained DC/DC power switches where thermal performance and logic-level drive compatibility are critical.

FAQ

What is the maximum continuous drain current rating for SI7633DP-T1-GE3 at 70 °C case temperature?

The SI7633DP-T1-GE3 supports -60 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal dissipation and reflects the device's ability to sustain high current without exceeding its 150 °C maximum junction temperature under steady-state conditions.

Does SI7633DP-T1-GE3 require a gate resistor for safe operation in adapter switch circuits?

While SI7633DP-T1-GE3 does not mandate an external gate resistor, a 1–10 Ω resistor is recommended to dampen gate ringing caused by PCB trace inductance and the device's 1.5 Ω intrinsic gate resistance. This improves EMI performance and prevents false turn-on during fast dV/dt transitions in high-density adapter layouts.

Can SI7633DP-T1-GE3 be used as a direct replacement for standard SO-8 P-channel MOSFETs on existing PCBs?

Yes-SI7633DP-T1-GE3 uses the same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, allowing drop-in replacement. However, its exposed bottom-side drain pad requires matching solder mask openings and thermal vias; using it on legacy SO-8 land patterns yields ~10 °C/W improvement in R_thJA over conventional packages.

What is the typical body diode forward voltage of SI7633DP-T1-GE3 at -5 A?

The typical body diode forward voltage (V_SD) of SI7633DP-T1-GE3 is -0.74 V at -5 A and 25 °C, as measured per the datasheet's Drain-Source Body Diode Characteristics table. This value increases slightly with junction temperature but remains below -1.1 V across the full -55 °C to +150 °C operating range.

Is SI7633DP-T1-GE3 compliant with lead-free and halogen-free manufacturing standards?

Yes-SI7633DP-T1-GE3 is explicitly marked "Lead (Pb)-free and halogen-free" in the Ordering Information section and conforms to Vishay's material categorization per document 99912. It meets JEDEC J-STD-020 reflow profiles and is qualified for Pb-free soldering up to 260 °C peak temperature.

SI7633DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9500 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7633DP-T1-GE3 FAQ

1.How can I place an order for SI7633DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7633DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7633DP-T1-GE3 reliable?

The price and inventory of SI7633DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7633DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7633DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7633DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7633DP-T1-GE3?

SI7633DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7633DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7633DP-T1-GE3?

For technical support, including SI7633DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7633DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7633DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7633DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7633DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7633DP-T1-GE3?

All SI7633DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7633DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7633DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7633DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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