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Vishay Siliconix SI7635DP-T1-GE3
- Part No.:
- SI7635DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7635DP-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,130
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Product details
Overview
SI7635DP-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET rated for -20 V drain-source voltage, 0.0049 Ω RDS(on) at VGS = -10 V, and -40 A continuous drain current (package-limited), designed for high-efficiency load switching in battery-powered systems and DC-DC power rails.
For engineers reviewing the SI7635DP-T1-GE3 datasheet, SI7635DP-T1-GE3 pinout, SI7635DP-T1-GE3 application, or SI7635DP-T1-GE3 equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive, 100 % Rg tested gate resistance, halogen-free and RoHS-compliant PowerPAK® SO-8 packaging, and thermal performance matching DPAK-level junction-to-case resistance.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) with fast switching characteristics: total gate charge is 95.3 nC (typ.) at VGS = -10 V and 46.5 nC (typ.) at VGS = -4.5 V, enabling efficient operation in synchronous buck topologies and hot-swap circuits. Its body diode exhibits 42 ns reverse recovery time and 25 nC Qrr, supporting moderate-frequency switching with low commutation loss.
The device operates across -55 °C to +150 °C junction temperature range and features ±16 V gate-source voltage rating, -1 V to -2.2 V threshold voltage, and guaranteed 100 % Rg testing - critical for consistent turn-on timing in parallel configurations and precision load control applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for low-voltage P-channel load switch or reverse polarity protection. |
| RDS(on) @ VGS = -10 V | 0.0049 Ω - Enables <100 mW conduction loss at 40 A, suitable for high-current battery disconnects. |
| RDS(on) @ VGS = -4.5 V | 0.0075 Ω - Ensures robust on-state performance with standard logic-level gate drivers. |
| ID (continuous) | -40 A (package-limited) - Supports high-power load switching without derating at TC = 25 °C. |
| Qg (total) | 95.3 nC (typ.) at -10 V - Determines gate drive power requirement and switching speed in hard-switched topologies. |
| RthJC | 1.8 °C/W (typ.) - Enables direct thermal coupling to PCB copper, delivering DPAK-equivalent heat dissipation in SO-8 footprint. |
| Body diode VSD | -0.74 V (typ.) at IS = -1 A - Low forward drop reduces power loss during freewheeling in DC-DC converters. |
Pinout & Package
SI7635DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm), featuring exposed drain pads on the bottom for enhanced thermal conduction. The package maintains pin compatibility with standard SO-8 footprints while offering superior thermal resistance (RthJC = 1.8 °C/W) and higher current capability than conventional SO-8 MOSFETs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal P-channel die; electrically tied to exposed source pad on bottom side. |
| 5 | Gate (G) | Control terminal; requires ≤±16 V drive; 100 % Rg tested for consistent switching behavior. |
| 6, 7, 8 | Drain (D) | Main power path; connected to large exposed copper drain pad on bottom for low-inductance, high-current routing and thermal sinking. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers industry-leading RDS(on) × Qg figure of merit for optimized switching efficiency in space-constrained designs. |
| PowerPAK® SO-8 package | Enables DPAK-level thermal performance (1.8 °C/W RthJC) in standard SO-8 PCB layout - no redesign required. |
| 100 % Rg tested | Guarantees gate resistance between 0.4 Ω and 3.8 Ω, ensuring predictable turn-on delay and gate driver sizing. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated industrial and consumer end equipment. |
| Low VGS(th) variation | -1 V to -2.2 V threshold ensures reliable turn-on with 3.3 V or 5 V logic-level controllers without external level shifting. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Reverse polarity and overcurrent protection in portable medical devices using dual-cell Li-ion batteries. IC Role / Device Role / Timing Role: P-channel high-side load switch controlling main power rail entry; activated only when battery voltage and system health are verified. Use Value: 0.0075 Ω RDS(on) at 4.5 V gate drive minimizes voltage drop across switch, preserving battery runtime and enabling accurate fuel gauging. |
Use Scenario: Bidirectional power path management in USB-C PD sink applications requiring 20 V input support. IC Role / Device Role / Timing Role: High-side P-channel switch isolating VBUS from system bus during fault conditions or port negotiation. Use Value: -20 V VDS rating and -40 A current capability allow safe handling of USB-C PD 20 V/5 A profiles without derating. |
| Industrial PLC I/O Module | Automotive Body Control Module |
|
Use Scenario: Solid-state replacement for electromechanical relays driving 24 V solenoids and indicator lamps in factory automation panels. IC Role / Device Role / Timing Role: Load switch interfacing microcontroller GPIO to high-current inductive loads via optocoupled isolation. Use Value: Fast 19 ns turn-on delay and 10 ns rise time enable precise PWM dimming and soft-start sequencing without snubber networks. |
Use Scenario: Smart fuse implementation for 12 V accessory circuits (e.g., seat heaters, mirror defoggers) in modern vehicle ECUs. IC Role / Device Role / Timing Role: Current-limited high-side switch with integrated thermal foldback, monitored by CAN-connected MCU. Use Value: Junction temperature range (-55 °C to +150 °C) and robust body diode (42 ns trr) ensure reliability under automotive thermal cycling and load dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | Higher RDS(on) (0.0095 Ω @ -10 V), lower Qg (62 nC), same PowerPAK SO-8 package. | Better suited for ultra-low-power always-on monitoring circuits where gate drive energy matters more than conduction loss. | Select Si7157DP-T1-GE3 when optimizing for standby current and gate drive losses rather than high-current efficiency. |
| IRF7425PbF | Standard SO-8 package, higher RthJC (3.0 °C/W), RDS(on) = 0.012 Ω @ -10 V, non-halogen-free construction. | Limited thermal headroom in high-power density layouts; not compliant with latest environmental directives. | Choose IRF7425PbF only for legacy board reuse where PowerPAK footprint change is prohibited and thermal margin exists. |
Compared with SI7635DP-T1-GE3, Si7157DP-T1-GE3 trades conduction efficiency for reduced gate drive demand, while IRF7425PbF sacrifices thermal performance and regulatory compliance for SO-8 footprint compatibility - making SI7635DP-T1-GE3 optimal for new designs prioritizing power density, thermal safety, and sustainability.
Availability
SI7635DP-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, industrial PLC I/O stages, and automotive body control units requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SI7635DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The Si7635DP product line belongs to Vishay's TrenchFET® Power MOSFET family, engineered specifically for high-current, low-voltage load switching in space- and thermally-constrained applications such as portable electronics and automotive subsystems.
FAQ
What is the maximum continuous drain current rating for SI7635DP-T1-GE3?
The SI7635DP-T1-GE3 is rated for -40 A continuous drain current at TC = 25 °C, limited by package thermal capacity rather than silicon die capability. At TC = 70 °C, the rating remains -40 A, but ambient-referenced ratings drop to -26 A at TA = 25 °C due to higher junction-to-ambient thermal resistance. Derating curves are provided in Figure 5 of the datasheet.
Does SI7635DP-T1-GE3 support 3.3 V logic-level gate drive?
Yes, SI7635DP-T1-GE3 delivers 0.0075 Ω RDS(on) at VGS = -4.5 V and maintains functional turn-on down to VGS = -3 V, making it compatible with 3.3 V microcontrollers when used with appropriate gate pull-up design. Threshold voltage ranges from -1 V to -2.2 V, ensuring reliable activation without external level shifters.
What is the thermal resistance from junction to case (RthJC) for SI7635DP-T1-GE3?
The SI7635DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 1.8 °C/W under steady-state conditions, with a maximum of 2.3 °C/W. This value is measured from the silicon junction to the exposed drain pad on the bottom of the PowerPAK® SO-8 package - enabling direct thermal coupling to PCB copper planes for effective heat removal.
Is SI7635DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SI7635DP-T1-GE3 uses the PowerPAK® SO-8 package with identical footprint and pinout to standard SO-8 - pins 1–4 are source, pin 5 is gate, and pins 6–8 are drain. However, its leadless construction requires updated solder paste stencil design and reflow profile per Vishay document 73257 to ensure reliable bottom-side solder joint formation.
What are the key reliability certifications for SI7635DP-T1-GE3?
SI7635DP-T1-GE3 is certified RoHS-compliant per Directive 2002/95/EC and halogen-free per IEC 61249-2-21. It undergoes 100 % Rg testing and qualifies for high-reliability applications with operating junction temperature range of -55 °C to +150 °C. Qualification data per JESD22-A108 is available in Vishay reliability report 65021.
SI7635DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 143 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4595 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 54W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7635DP-T1-GE3 FAQ
1.How can I place an order for SI7635DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7635DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7635DP-T1-GE3 reliable?
The price and inventory of SI7635DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7635DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7635DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7635DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7635DP-T1-GE3?
SI7635DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7635DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7635DP-T1-GE3?
For technical support, including SI7635DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7635DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7635DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7635DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7635DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7635DP-T1-GE3?
All SI7635DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7635DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7635DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7635DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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