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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7636DP-T1-E3

Name: SI7636DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7636DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7636DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7636DP-T1-E3.pdf

Description:: MOSFET N-CH 30V 17A PPAK SO-8

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Product details

Overview

SI7636DP-T1-E3 from Vishay Siliconix is an N-channel 30-V (D-S) TrenchFET® Gen II Power MOSFET in a lead-free PowerPAK® SO-8 package, delivering 28 A continuous drain current at 25 °C, 0.004 Ω R_DS(on) at V_GS = 10 V, and 36 nC total gate charge - optimized for low-side DC/DC conversion in notebook and server power stages.

For engineers reviewing the SI7636DP-T1-E3 datasheet, SI7636DP-T1-E3 pinout, SI7636DP-T1-E3 application, or SI7636DP-T1-E3 equivalent, key selection criteria include its ultra-low on-resistance, thermal performance matching DPAK, Qg-optimized switching behavior, and compatibility with standard SO-8 land patterns without PCB redesign.

Technical Context

This MOSFET uses high-density TrenchFET® Gen II technology to achieve sub-4 mΩ on-resistance at 10 V gate drive while maintaining robust 30 V V_DS rating and ±20 V V_GS tolerance. Its 1.07 mm profile and exposed-drain thermal pad enable direct board-level heat conduction comparable to DPAK packages.

The device features 100 % R_g testing, halogen-free construction per IEC 61249-2-21, and is characterized for synchronous rectifier operation with 0.72 V typical source-drain diode forward voltage at 2.9 A - supporting high-efficiency POL converters requiring fast body diode recovery (t_rr = 45–70 ns).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with margin for transients in point-of-load and notebook DC/DC systems.
R_DS(on) @ 10 V	0.004 Ω - enables <100 mW conduction loss at 5 A, critical for high-current low-voltage output stages.
I_D (continuous)	28 A @ T_A = 25 °C - sustains high peak currents in transient-loaded server VRMs without derating.
Q_g (typ.)	36 nC - balances switching speed and gate drive power, reducing E_SW in 300–1000 kHz synchronous buck topologies.
R_thJC	1.3 °C/W (typ.) - provides DPAK-equivalent junction-to-case thermal path via exposed drain pad for efficient heatsinking.
t_rr	45–70 ns - ensures low reverse recovery loss during hard-switched synchronous rectification in non-isolated converters.
V_GS(th)	1.0–3.0 V - compatible with 3.3 V and 5 V gate drivers, enabling direct logic-level control without level-shifting.

Pinout & Package

SI7636DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm × 1.07 mm), featuring an exposed drain pad on the bottom side for enhanced thermal transfer. It maintains identical footprint and pinout to standard SO-8, enabling drop-in replacement in existing layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-frequency switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to large exposed copper pad - primary thermal and current path to PCB.
3 (center)	Gate (G)	Single gate terminal located between source pins - minimizes gate loop inductance for stable high-speed switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.004 Ω @ 10 V enables <1 W conduction loss at 15 A, directly improving efficiency in 12 V → 1.2 V VRMs.
PowerPAK® SO-8 thermal design	1.3 °C/W R_thJC allows die temperature rise of only ~2 °C above board temp at 2.7 W dissipation - stabilizing R_DS(on) under load.
Q_g-optimized structure	36 nC total gate charge reduces driver power demand and switching transition time versus legacy SO-8 MOSFETs.
100 % R_g tested	Guarantees gate resistance ≤ 2.0 Ω, ensuring consistent turn-on timing and minimizing shoot-through risk in half-bridge configurations.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS - suitable for green electronics manufacturing without process requalification.

Applications

Server VRM Low-Side Switch	Notebook CPU Core Power
Use Scenario: High-current, high-frequency synchronous buck converter supplying 1.0–1.3 V to multi-core Xeon processors with dynamic load steps up to 100 A/µs. IC Role / Device Role / Timing Role: Low-side power switch conducting freewheeling current during high-side FET off-time; operates at 300–600 kHz with tight dead-time control. Use Value: 0.004 Ω R_DS(on) limits conduction loss to <0.6 W at 12 A, while 45 ns t_rr minimizes body diode loss during dead-time - increasing full-load efficiency by ≥0.8% vs. SO-8 alternatives.	Use Scenario: Compact 2-phase core regulator on thin-and-light laptop motherboards, constrained by height (<1.2 mm) and thermal budget (<3 W total dissipation). IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase buck converter; gate driven by integrated controller with 3.3 V logic-level output. Use Value: 1.07 mm profile fits within Z-height limit; 1.3 °C/W R_thJC keeps junction <110 °C at 2.5 W - avoiding thermal throttling during sustained turbo boost.
Workstation POL Converter	Synchronous Rectifier in DC/DC Module
Use Scenario: Distributed 5 V → 3.3 V/2.5 V regulation for FPGA I/O banks and memory interfaces in high-performance workstations. IC Role / Device Role / Timing Role: Primary low-side switch in discrete 500 kHz buck stage; operated with external gate driver for precise timing control. Use Value: V_GS(th) range (1.0–3.0 V) ensures reliable turn-on with 3.3 V gate drive; 36 nC Q_g enables clean 15 ns rise/fall times - reducing EMI generation in noise-sensitive signal processing subsystems.	Use Scenario: Embedded synchronous rectifier in isolated 48 V → 12 V intermediate bus converter module used across telecom and industrial equipment. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary-side switching. Use Value: 0.72 V V_SD and 45 ns t_rr cut conduction and recovery losses by >40% vs. 40 V Schottky, directly improving module efficiency from 92% to 94.5% at 20 A load.

Server VRM Low-Side Switch

Notebook CPU Core Power

Use Scenario: High-current, high-frequency synchronous buck converter supplying 1.0–1.3 V to multi-core Xeon processors with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: Low-side power switch conducting freewheeling current during high-side FET off-time; operates at 300–600 kHz with tight dead-time control.

Use Value: 0.004 Ω R_DS(on) limits conduction loss to <0.6 W at 12 A, while 45 ns t_rr minimizes body diode loss during dead-time - increasing full-load efficiency by ≥0.8% vs. SO-8 alternatives.

Use Scenario: Compact 2-phase core regulator on thin-and-light laptop motherboards, constrained by height (<1.2 mm) and thermal budget (<3 W total dissipation).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase buck converter; gate driven by integrated controller with 3.3 V logic-level output.

Use Value: 1.07 mm profile fits within Z-height limit; 1.3 °C/W R_thJC keeps junction <110 °C at 2.5 W - avoiding thermal throttling during sustained turbo boost.

Workstation POL Converter

Synchronous Rectifier in DC/DC Module

Use Scenario: Distributed 5 V → 3.3 V/2.5 V regulation for FPGA I/O banks and memory interfaces in high-performance workstations.

IC Role / Device Role / Timing Role: Primary low-side switch in discrete 500 kHz buck stage; operated with external gate driver for precise timing control.

Use Value: V_GS(th) range (1.0–3.0 V) ensures reliable turn-on with 3.3 V gate drive; 36 nC Q_g enables clean 15 ns rise/fall times - reducing EMI generation in noise-sensitive signal processing subsystems.

Use Scenario: Embedded synchronous rectifier in isolated 48 V → 12 V intermediate bus converter module used across telecom and industrial equipment.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary-side switching.

Use Value: 0.72 V V_SD and 45 ns t_rr cut conduction and recovery losses by >40% vs. 40 V Schottky, directly improving module efficiency from 92% to 94.5% at 20 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-E3	30 V, 0.0028 Ω R_DS(on) @ 10 V, 40 A I_D, higher Q_g (52 nC), same PowerPAK SO-8 package	Better conduction loss at high current but slower switching; requires stronger gate driver	Select when lowest R_DS(on) dominates over switching loss - e.g., <300 kHz designs with heavy continuous load.
IRF7478PBF	30 V, 0.0042 Ω R_DS(on) @ 10 V, 25 A I_D, 44 nC Q_g, standard SO-8 package with higher R_thJA (65 °C/W)	Higher thermal resistance increases junction temp by ~25 °C at same power - degrades R_DS(on) and reliability	Select only if legacy SO-8 layout prohibits PowerPAK adoption; expect 0.3–0.5% lower efficiency and tighter thermal margin.

Compared with Si7850DP-T1-E3, SI7636DP-T1-E3 trades 30% lower Q_g for 1.4× higher R_DS(on), favoring high-frequency, medium-current POL use; versus IRF7478PBF, it delivers 2× better thermal resistance and identical R_DS(on) in smaller footprint - making it superior for space- and thermally-constrained designs.

Availability

SI7636DP-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, notebook CPU core power, workstation POL converters, and synchronous rectifier modules requiring stable component supply and long-term production continuity.

Supply support for SI7636DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SI7636DP-T1-E3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® Gen II family, engineered specifically for high-current, high-frequency DC/DC conversion where low R_DS(on), fast switching, and board-level thermal management are critical.

FAQ

What is the maximum continuous drain current rating for SI7636DP-T1-E3 at 70 °C ambient temperature?

The SI7636DP-T1-E3 supports 22 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced heat dissipation capability at elevated ambient temperatures and assumes proper PCB copper area for thermal management. The SI7636DP-T1-E3 must be mounted on a minimum recommended land pattern per Application Note AN826 to achieve this rating reliably.

Does SI7636DP-T1-E3 require a gate resistor for stable operation in a synchronous buck converter?

The SI7636DP-T1-E3 does not mandate an external gate resistor for basic functionality, but a 2–10 Ω series gate resistor is recommended to dampen ringing, control dV/dt, and prevent shoot-through in half-bridge configurations. Its guaranteed R_g ≤ 2.0 Ω ensures predictable turn-on timing, and the 36 nC Q_g makes it compatible with standard MOSFET drivers like the IR2110 or LM5113 without excessive power loss in the gate loop.

Can SI7636DP-T1-E3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes, SI7636DP-T1-E3 uses the identical footprint and pinout as standard SO-8 packages, enabling drop-in replacement on legacy boards. However, its exposed drain pad requires solder connection to a thermal pad on the PCB - unlike standard SO-8 leads. To retain full thermal benefit, the land pattern should follow Vishay's recommended minimum pads (Document 72599); using the original SO-8 pattern still yields measurable improvement (≥10 °C/W lower R_thJA) over conventional SO-8 devices.

What is the typical source-drain diode forward voltage of SI7636DP-T1-E3 and how does it affect synchronous rectifier performance?

The SI7636DP-T1-E3 exhibits a typical source-drain diode forward voltage (V_SD) of 0.72 V at I_S = 2.9 A and V_GS = 0 V. This low V_SD, combined with 45–70 ns reverse recovery time (t_rr), significantly reduces conduction and recovery losses compared to Schottky diodes in synchronous rectifier applications - especially in 12 V → 3.3 V or 5 V → 1.8 V DC/DC stages where body diode conduction occurs during dead-time intervals.

Is SI7636DP-T1-E3 qualified for lead-free reflow soldering, and what is the peak temperature specification?

Yes, SI7636DP-T1-E3 is qualified for lead-free reflow soldering per JEDEC J-STD-020. The maximum peak temperature is 255 °C (+5/−0 °C), with time above liquidus (217 °C) limited to 60–150 seconds and dwell time at peak temperature capped at 30 seconds. Full reflow profile details are documented in Vishay's Solder Profile document 73257, accessible at www.vishay.com/ppg?73257 - confirming compatibility with standard Pb-free assembly lines.

SI7636DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7636DP-T1-E3 FAQ

1.How can I place an order for SI7636DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7636DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7636DP-T1-E3 reliable?

The price and inventory of SI7636DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7636DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7636DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7636DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7636DP-T1-E3?

SI7636DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7636DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7636DP-T1-E3?

For technical support, including SI7636DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7636DP-T1-E3 requirements.

6.How does Aetrix verify that SI7636DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7636DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7636DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7636DP-T1-E3?

All SI7636DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7636DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7636DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7636DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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