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Vishay Siliconix SI7636DP-T1-GE3
- Part No.:
- SI7636DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7636DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 17A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,040
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Product details
Overview
SI7636DP-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 30-V MOSFET in PowerPAK® SO-8 package, delivering 28 A continuous drain current at TJ = 150 °C, RDS(on) = 4.0 mΩ at VGS = 10 V, and optimized for low-side DC/DC conversion in notebook and server power stages.
For engineers reviewing the SI7636DP-T1-GE3 datasheet, SI7636DP-T1-GE3 pinout, SI7636DP-T1-GE3 application, or SI7636DP-T1-GE3 equivalent, this device offers verified thermal performance (RthJC = 1.3 °C/W), Qg = 36 nC at VGS = 4.5 V, and compatibility with standard SO-8 land patterns-critical for high-efficiency synchronous rectification and POL designs.
Technical Context
This MOSFET uses Vishay's TrenchFET® Gen II technology to achieve ultra-low on-resistance while maintaining robust gate charge optimization (Qg = 36 nC, Qgd = 10 nC) and fast switching (tr = 16–25 ns, tf = 32–50 ns). Its 1.07 mm profile and exposed-drain thermal pad enable direct board-level heat conduction.
The device features 100 % Rg tested gate resistance (0.6–2.0 Ω), guaranteed VGS(th) of 1.0–3.0 V, and specified avalanche capability (IAS = 50 A, L = 0.1 mH). It operates across –55 to +150 °C junction temperature range and supports reflow up to 260 °C peak per JEDEC J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC stages. |
| RDS(on) | 4.0 mΩ @ VGS = 10 V, ID = 25 A - Enables <1 W conduction loss at 25 A, critical for high-current POL efficiency. |
| ID (continuous) | 28 A @ TJ = 150 °C - Sustains full-load current in thermally constrained server VRMs without derating. |
| Qg | 36 nC @ VDS = 15 V, VGS = 4.5 V - Low gate drive energy reduces controller IC loading and enables 500 kHz+ switching. |
| RthJC | 1.3 °C/W (typ.) - Matches DPAK thermal performance, enabling direct thermal interface to PCB copper without heatsinks. |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with 3.3 V or 5 V gate drivers, supporting logic-level control in compact converters. |
| Ciss | 5600 pF - Predictable input capacitance simplifies gate driver sizing and EMI filter design. |
Pinout & Package
SI7636DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height) with exposed drain pad on bottom side for thermal conduction. Pin layout matches standard SO-8 footprint, enabling drop-in replacement on existing layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate drive; 100 % Rg tested (0.6–2.0 Ω). |
| 2 (S) | Source | Power return node; tied to ground or low-side switch node; forms body diode anode. |
| 3 (S) | Source | Second source connection; paralleled internally with Pin 2 to reduce source inductance. |
| 4 (S) | Source | Third source connection; further lowers common-source inductance for high-dI/dt stability. |
| 5 (D) | Drain | Main power output; connected to exposed copper pad on bottom; primary thermal path to PCB. |
| 6 (D) | Drain | Second drain connection; electrically tied to Pin 5 and bottom pad for current sharing. |
| 7 (D) | Drain | Third drain connection; enhances current handling and thermal spreading across package. |
| 8 (D) | Drain | Fourth drain connection; completes low-inductance, high-current drain path to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen II process | Delivers 4.0 mΩ RDS(on) in SO-8 footprint-enabling higher current density than legacy SO-8 MOSFETs. |
| PowerPAK® SO-8 package | 1.07 mm height and exposed drain pad reduce RthJA to 19 °C/W (10 s) and RthJC to 1.3 °C/W-matching DPAK thermal performance. |
| Qg-optimized structure | 36 nC total gate charge at 4.5 V drive enables efficient operation with low-voltage PWM controllers in POL applications. |
| 100 % Rg tested | Guarantees gate resistance between 0.6–2.0 Ω-ensuring consistent turn-on timing and reducing gate driver stress. |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS-suitable for environmentally regulated industrial and computing end equipment. |
Applications
| Notebook DC/DC Converter | Server VRM Low-Side Switch |
|---|---|
|
Use Scenario: High-efficiency buck converter supplying core voltage to Intel/AMD CPUs in ultrathin notebooks. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–600 kHz with 12 V input and 1.0–1.3 V output. Use Value: 4.0 mΩ RDS(on) minimizes conduction loss at 25 A load, improving full-load efficiency by ≥1.2 % vs. 6.5 mΩ alternatives. |
Use Scenario: Multiphase VRM in dual-socket servers delivering >200 A to Xeon processors under transient load. IC Role / Device Role / Timing Role: Low-side switch in 30–50 A per-phase configuration, driven by dedicated gate drivers. Use Value: 1.3 °C/W RthJC maintains TJ ≤ 125 °C at 28 A continuous, eliminating need for additional thermal vias or heatsinks. |
| Workstation POL Module | Synchronous Rectifier in Isolated DC/DC |
|
Use Scenario: Point-of-load regulator powering FPGA or GPU memory subsystems with tight thermal envelopes. IC Role / Device Role / Timing Role: Secondary-side switch in non-isolated buck stage, operating at 1 MHz with 5 V input. Use Value: 36 nC Qg and 16 ns rise time support stable 1 MHz switching with minimal gate drive loss and EMI. |
Use Scenario: Secondary-side synchronous rectifier in 48 V–12 V isolated flyback or forward converter for telecom power supplies. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency. Use Value: 0.72 V VSD body diode forward voltage and 4.0 mΩ RDS(on) cut conduction losses by 45 % vs. 40 V Schottky diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7634DP-T1-GE3 | RDS(on) = 3.3 mΩ @ 10 V (lower), Qg = 42 nC (higher), same PowerPAK SO-8 package. | Better conduction loss but higher gate drive demand; suited for lower-frequency, higher-current VRMs. | Select when minimizing I²R loss dominates over switching loss; verify gate driver can supply 42 nC. |
| IRF7470PBF | Standard SO-8 package (not PowerPAK), RDS(on) = 4.5 mΩ @ 10 V, RthJC = 16 °C/W (worse). | Higher thermal resistance limits current handling in compact layouts; requires larger copper area or heatsinking. | Choose only if legacy SO-8 compatibility is mandatory and thermal margin ≥25 °C is available. |
Compared with SI7636DP-T1-GE3, Si7634DP-T1-GE3 trades higher gate charge for lower on-resistance-favoring conduction-limited designs-while IRF7470PBF sacrifices thermal performance for universal SO-8 footprint compatibility, increasing board-level cooling requirements.
Availability
SI7636DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook power delivery, server VRMs, and workstation POL modules requiring stable component supply, halogen-free compliance, and high-current MOSFET performance in space-constrained layouts.
Supply support for SI7636DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7636DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 N-channel MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in computing and communications infrastructure where thermal density and gate drive efficiency are critical.
FAQ
What is the maximum continuous drain current rating for SI7636DP-T1-GE3 at 70 °C ambient?
The SI7636DP-T1-GE3 supports 22 A continuous drain current at TA = 70 °C (steady-state), as specified in its Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes proper PCB copper area per Vishay Application Note AN821.
Does SI7636DP-T1-GE3 require a custom PCB land pattern, or is it compatible with standard SO-8 footprints?
SI7636DP-T1-GE3 uses the standard SO-8 footprint and is fully compatible with existing SO-8 land patterns. However, Vishay recommends extending the drain pad area beyond the minimum outline (per Application Note AN826) to maximize thermal performance-no layout redesign is needed for basic functionality.
What is the gate threshold voltage range for SI7636DP-T1-GE3, and how does it affect drive compatibility?
The SI7636DP-T1-GE3 has a guaranteed VGS(th) range of 1.0–3.0 V at ID = 250 µA. This allows reliable turn-on with 3.3 V logic-level gate drivers and ensures stable operation across temperature, making it suitable for direct interfacing with microcontroller GPIO or dedicated PWM controllers without level-shifting.
How does the PowerPAK® SO-8 package of SI7636DP-T1-GE3 improve thermal performance compared to standard SO-8 MOSFETs?
The SI7636DP-T1-GE3's PowerPAK® SO-8 package achieves RthJC = 1.3 °C/W (typ.), matching DPAK performance-over 12× better than standard SO-8 (16 °C/W). Its exposed drain pad conducts heat directly into PCB copper, reducing junction-to-ambient resistance to 19 °C/W (10 s), enabling higher current handling without heatsinks.
Is SI7636DP-T1-GE3 rated for avalanche energy, and what is its specified IAS value?
Yes, SI7636DP-T1-GE3 is rated for repetitive avalanche operation with IAS = 50 A (L = 0.1 mH), as confirmed in the Absolute Maximum Ratings table. This rating supports robustness in inductive switching applications such as synchronous rectification where voltage spikes may occur during turn-off.
SI7636DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5600 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7636DP-T1-GE3 FAQ
1.How can I place an order for SI7636DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7636DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7636DP-T1-GE3 reliable?
The price and inventory of SI7636DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7636DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7636DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7636DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7636DP-T1-GE3?
SI7636DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7636DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7636DP-T1-GE3?
For technical support, including SI7636DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7636DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7636DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7636DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7636DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7636DP-T1-GE3?
All SI7636DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7636DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7636DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7636DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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