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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7664DP-T1-E3

Name: SI7664DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7664DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7664DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7664DP-T1-E3.pdf

Description:: MOSFET N-CH 30V 40A PPAK SO-8

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Product details

Overview

SI7664DP-T1-E3 from Vishay Siliconix is an N-channel 30-V (D-S) TrenchFET® Power MOSFET in a PowerPAK® SO-8 package, optimized for PWM synchronous rectification with R_DS(on) = 3.1 mΩ at V_GS = 10 V and 3.6 mΩ at 4.5 V, rated for 40 A continuous drain current at T_C = 25 °C, and used as a low-side switch in notebook and server power stages.

For engineers reviewing the SI7664DP-T1-E3 datasheet, SI7664DP-T1-E3 pinout, SI7664DP-T1-E3 application, or SI7664DP-T1-E3 equivalent, key selection criteria include thermal resistance (R_thJC = 1.0 °C/W), gate charge (Q_g = 38–55 nC at 4.5 V), body diode recovery (t_rr = 35–55 ns), and lead-free RoHS-compliant packaging.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching, supporting high-efficiency synchronous buck converters where low conduction loss and controlled turn-on/turn-off timing are critical. Its PowerPAK SO-8 package provides enhanced thermal performance over standard SO-8, with exposed drain pads enabling direct heatsinking.

The device features 100 % R_g, capacitance, and UIS testing per production lot, and its gate threshold voltage (V_GS(th) = 0.6–1.8 V) ensures reliable enhancement-mode operation across temperature. Body diode characteristics-including V_SD = 0.73–1.1 V at I_S = 5 A and Q_rr = 35–55 nC-support robust reverse recovery in synchronous FET applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail systems with margin.
R_DS(on)	3.1 mΩ @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 20 A, critical for high-current low-side switching.
I_D (continuous)	40 A @ T_C = 25 °C - Supports high-power CPU/GPU VRMs without parallel devices.
Q_g	38–55 nC @ V_GS = 4.5 V - Matches common 5 V gate drivers and minimizes switching loss in 300–1000 kHz PWM.
R_thJC	1.0 °C/W (typ.) - Allows >80 W power dissipation with modest heatsinking on PCB copper.
t_rr	35–55 ns - Reduces shoot-through risk and EMI during dead-time transitions in synchronous rectifiers.
V_GS(th)	0.6–1.8 V - Ensures full enhancement with standard logic-level gate drive, avoiding partial turn-on.

Pinout & Package

SI7664DP-T1-E3 uses the PowerPAK® SO-8 package: leadless, bottom-terminal, 6.15 mm × 5.15 mm footprint, with exposed drain pads on the bottom surface for thermal conduction. The package height is 1.07 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Common return node for load current; tied to power ground plane for low-inductance path.
2 (S)	Source	Parallel source connection to reduce package resistance and improve current sharing.
3 (S)	Source	Third source terminal for enhanced thermal and electrical connection to PCB ground copper.
4 (G)	Gate	Control input; requires <1.5 Ω series resistance to damp ringing due to low R_g = 0.95–1.5 Ω.
5 (D)	Drain	Main power output node; connected to exposed bottom copper pad for thermal transfer to heatsink or inner layer.
6 (D)	Drain	Second drain terminal; shares current with Pin 5 and improves thermal spreading.
7 (D)	Drain	Third drain terminal; maximizes copper area contact for low R_thJC and high pulse current handling.
8 (D)	Drain	Fourth drain terminal; completes symmetric drain layout for uniform current distribution and thermal stress relief.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers ultra-low R_DS(on) and high cell density in compact PowerPAK SO-8, reducing board space vs. DPAK alternatives.
PWM-optimized switching	Q_gd/Q_gs ratio of ~0.52 enables clean Miller plateau control and stable hard-switching up to 1 MHz.
100 % R_g and capacitance tested	Ensures consistent gate drive timing and predictable EMI behavior across production lots for automotive-grade reliability.
Exposed drain thermal pad	Enables junction-to-board thermal resistance as low as 1.0 °C/W, supporting >50 W continuous dissipation on 2 oz Cu.
RoHS-compliant, lead-free	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), eliminating post-reflow baking requirements.

Applications

Notebook DC-DC Converters	Server VRM Low-Side Switching
Use Scenario: High-density 1–2 phase buck converters supplying core voltage to Intel/AMD mobile CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–600 kHz with 5 V gate drive. Use Value: 3.1 mΩ R_DS(on) reduces conduction loss by ≥25 % vs. legacy 5 mΩ MOSFETs, extending battery runtime.	Use Scenario: Multiphase 48 V–12 V intermediate bus converters feeding GPU/CPU VRMs in rack-mounted servers. IC Role / Device Role / Timing Role: Primary low-side switch in 3–6 phase interleaved topology with 500 kHz–1 MHz switching. Use Value: 38 nC Q_g at 4.5 V enables efficient drive from integrated controller gate drivers, lowering driver IC power consumption.
Workstation Power Delivery	Industrial FPGA Core Supply
Use Scenario: High-transient 12 V input buck regulators powering Xeon-W or Threadripper processors in CAD/CAM workstations. IC Role / Device Role / Timing Role: Low-side FET in adaptive on-time controller-based VRM with dynamic phase shedding. Use Value: 40 A rating and 1.0 °C/W R_thJC sustain >35 A peak loads without derating, maintaining regulation under burst workloads.	Use Scenario: Compact 3.3 V/20 A core supply for Xilinx Versal or Intel Agilex FPGAs in edge AI inference modules. IC Role / Device Role / Timing Role: Synchronous rectifier in tightly regulated point-of-load converter with <10 µs transient response. Use Value: Fast t_rr = 35 ns and low Q_rr minimize reverse recovery energy loss, improving light-load efficiency by 1.2–1.8 %.

Notebook DC-DC Converters

Server VRM Low-Side Switching

Use Scenario: High-density 1–2 phase buck converters supplying core voltage to Intel/AMD mobile CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–600 kHz with 5 V gate drive.

Use Value: 3.1 mΩ R_DS(on) reduces conduction loss by ≥25 % vs. legacy 5 mΩ MOSFETs, extending battery runtime.

Use Scenario: Multiphase 48 V–12 V intermediate bus converters feeding GPU/CPU VRMs in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary low-side switch in 3–6 phase interleaved topology with 500 kHz–1 MHz switching.

Use Value: 38 nC Q_g at 4.5 V enables efficient drive from integrated controller gate drivers, lowering driver IC power consumption.

Workstation Power Delivery

Industrial FPGA Core Supply

Use Scenario: High-transient 12 V input buck regulators powering Xeon-W or Threadripper processors in CAD/CAM workstations.

IC Role / Device Role / Timing Role: Low-side FET in adaptive on-time controller-based VRM with dynamic phase shedding.

Use Value: 40 A rating and 1.0 °C/W R_thJC sustain >35 A peak loads without derating, maintaining regulation under burst workloads.

Use Scenario: Compact 3.3 V/20 A core supply for Xilinx Versal or Intel Agilex FPGAs in edge AI inference modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in tightly regulated point-of-load converter with <10 µs transient response.

Use Value: Fast t_rr = 35 ns and low Q_rr minimize reverse recovery energy loss, improving light-load efficiency by 1.2–1.8 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.3 mΩ @ 4.5 V; Q_g = 34 nC; PowerPAIR® 3.3 × 3.3 mm package; R_thJC = 1.2 °C/W.	Smaller footprint but lower current rating (30 A); better suited for space-constrained 10–15 A designs.	Select when board area is constrained and thermal budget allows higher R_thJC.
DMN3029LSD-13	R_DS(on) = 2.9 mΩ @ 4.5 V; Q_g = 50 nC; SO-8 package; R_thJC = 1.4 °C/W; no 100 % UIS test.	Lower R_DS(on) but higher Q_g and thermal resistance; suitable for lower-frequency, high-current apps where switching loss is secondary.	Select when minimizing conduction loss dominates over switching loss and thermal headroom exists.

Compared with IRLHS6342TRPBF and DMN3029LSD-13, SI7664DP-T1-E3 offers the best balance of low R_DS(on), moderate Q_g, and industry-leading R_thJC, making it optimal for thermally demanding, medium-to-high frequency synchronous buck stages requiring proven UIS robustness.

Availability

SI7664DP-T1-E3 is available at Aetrix Electronics and suitable for notebook power delivery, server VRMs, workstation DC-DC converters, and industrial FPGA core supplies requiring stable component supply and long-term manufacturability.

Supply support for SI7664DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si7664DP belongs to Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-current, high-frequency synchronous rectification in computing and communications power supplies.

FAQ

What is the maximum continuous drain current for SI7664DP-T1-E3 at 70 °C case temperature?

The SI7664DP-T1-E3 supports 32 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and airflow conditions in the final design.

Does SI7664DP-T1-E3 require a gate resistor for stable operation in PWM applications?

Yes, SI7664DP-T1-E3 benefits from a series gate resistor (typically 0.5–2.0 Ω) to dampen gate ringing caused by its low intrinsic gate resistance (0.95–1.5 Ω) and parasitic inductance. Without proper gate resistance, overshoot and oscillation can occur, increasing switching loss and EMI in high-frequency PWM circuits using the SI7664DP-T1-E3.

Is SI7664DP-T1-E3 suitable for use as a high-side switch in a buck converter?

No, SI7664DP-T1-E3 is an N-channel MOSFET optimized for low-side switching and is not designed for high-side operation without a dedicated floating gate driver. Its gate threshold and lack of integrated level-shifting circuitry make it unsuitable as a high-side switch; the SI7664DP-T1-E3 functions exclusively as a synchronous rectifier in low-side configurations.

What is the body diode forward voltage of SI7664DP-T1-E3 at 5 A and 25 °C?

The body diode forward voltage (V_SD) of SI7664DP-T1-E3 is 0.73–1.1 V at I_S = 5 A and T_J = 25 °C, as specified in the Drain-Source Body Diode Characteristics section. This low V_SD minimizes conduction loss during dead-time conduction and improves efficiency in synchronous rectifier operation using the SI7664DP-T1-E3.

How does the PowerPAK SO-8 package of SI7664DP-T1-E3 improve thermal performance over standard SO-8?

The PowerPAK SO-8 package of SI7664DP-T1-E3 features an exposed copper drain pad on the bottom surface that directly contacts the PCB thermal plane, achieving R_thJC = 1.0 °C/W (typ.)-nearly 3× better than standard SO-8. This design allows the SI7664DP-T1-E3 to dissipate >80 W with appropriate copper area, significantly outperforming conventional SO-8 MOSFETs in thermally dense power stages.

SI7664DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 7770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7664DP-T1-E3 FAQ

1.How can I place an order for SI7664DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7664DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7664DP-T1-E3 reliable?

The price and inventory of SI7664DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7664DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7664DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7664DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7664DP-T1-E3?

SI7664DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7664DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7664DP-T1-E3?

For technical support, including SI7664DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7664DP-T1-E3 requirements.

6.How does Aetrix verify that SI7664DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7664DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7664DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7664DP-T1-E3?

All SI7664DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7664DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7664DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7664DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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