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Vishay Siliconix SI7664DP-T1-GE3
- Part No.:
- SI7664DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7664DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,719
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Product details
Overview
SI7664DP-T1-GE3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, optimized for PWM synchronous rectification with RDS(on) = 3.1 mΩ at VGS = 10 V and 3.6 mΩ at 4.5 V, rated for 40 A continuous drain current at TC = 25 °C, and used in low-side switching for notebook and server power stages.
For engineers reviewing the SI7664DP-T1-GE3 datasheet, SI7664DP-T1-GE3 pinout, SI7664DP-T1-GE3 application, or SI7664DP-T1-GE3 equivalent, key selection criteria include thermal resistance (RthJC = 1.0 °C/W), gate charge (Qg = 38–125 nC), body diode recovery (trr = 35–55 ns), and halogen-free RoHS compliance for high-reliability computing power delivery.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching, supporting high-frequency synchronous buck converters. Its PowerPAK SO-8 package delivers low thermal resistance (RthJC = 1.0 °C/W) and 1.07 mm profile for space-constrained PCB layouts.
The device is fully characterized for PWM operation: total gate charge ranges from 38 nC (VGS = 4.5 V) to 125 nC (VGS = 10 V); body diode reverse recovery time is 35–55 ns with Qrr = 35–55 nC; and it undergoes 100 % Rg, capacitance, and UIS testing per production lot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail systems |
| RDS(on) | 3.1 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 20 A in low-side position |
| ID (continuous) | 40 A @ TC = 25 °C - Supports high-current CPU/GPU VRMs without external heatsink |
| Qg | 38 nC @ VGS = 4.5 V - Low gate drive power requirement for 3.3 V/5 V controller compatibility |
| RthJC | 1.0 °C/W - Enables efficient heat transfer to PCB copper or heatsink in compact form factor |
| trr | 35–55 ns - Minimizes body diode conduction loss and EMI during dead-time transitions |
| VGS(th) | 0.6–1.8 V - Ensures reliable turn-on with standard logic-level gate drivers |
Pinout & Package
SI7664DP-T1-GE3 uses the leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height), with exposed-drain thermal pad on bottom side for enhanced thermal performance. The package is RoHS-compliant, lead-free, and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common return path for load current; tied to power ground plane |
| 2 (S) | Source | Parallel source connection for reduced bond wire inductance |
| 3 (S) | Source | Third source terminal for improved current sharing and thermal spreading |
| 4 (G) | Gate | Control input; requires low-inductance routing to minimize ringing |
| 5 (D) | Drain | Main power output node; connected to exposed thermal pad for heat sinking |
| 6 (D) | Drain | Second drain terminal for lower RDS(on) and reduced package inductance |
| 7 (D) | Drain | Third drain terminal enhancing current capacity and thermal dissipation |
| 8 (D) | Drain | Fourth drain terminal completing low-impedance drain network |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers industry-leading RDS(on) × Qg figure of merit for high-efficiency DC-DC conversion |
| PowerPAK® SO-8 package | Reduces RthJC to 1.0 °C/W and enables 30 % smaller footprint vs. standard SO-8 |
| PWM-optimized switching | Guaranteed tr/tf ≤ 155 ns and Qgd/Qgs ratio < 0.6 for clean hard-switching behavior |
| 100 % Rg and UIS tested | Ensures robustness against gate overvoltage and unclamped inductive switching stress |
| Halogen-free construction | Meets IEC 61249-2-21 and JEDEC J-STD-020 standards for green electronics manufacturing |
Applications
| Notebook Power Delivery | Server VRM Low-Side Switch |
|---|---|
Use Scenario: High-density 1–2 phase CPU core VRMs in ultrabooks and thin-and-light platforms requiring minimal board area and low thermal rise. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck converter topology, conducting during bottom-half PWM cycle. Use Value: 3.1 mΩ RDS(on) reduces conduction loss by >25 % vs. legacy 5 mΩ MOSFETs, extending battery runtime under load. | Use Scenario: Multiphase 48 V-to-12 V or 12 V-to-1 V intermediate bus converters in rack-mounted servers. IC Role / Device Role / Timing Role: Primary low-side switch in interleaved synchronous buck stages handling up to 40 A per phase. Use Value: 1.0 °C/W RthJC allows direct thermal coupling to internal copper planes, eliminating need for external thermal vias in many designs. |
| Workstation GPU Power Stage | Industrial Embedded DC-DC Module |
Use Scenario: Compact, fanless GPU power supplies in professional workstations where acoustic noise and thermal headroom are critical. IC Role / Device Role / Timing Role: Low-side switch in high-frequency (≥500 kHz) multiphase regulator delivering transient current to GPU memory and compute cores. Use Value: 35–55 ns body diode trr minimizes shoot-through risk and improves efficiency during light-load discontinuous conduction mode. | Use Scenario: DIN-rail mounted programmable logic controller (PLC) power modules requiring long-term reliability and wide temperature operation. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated flyback or forward converter secondary side, operating across -40 °C to +125 °C ambient. Use Value: Guaranteed RDS(on) stability over temperature (normalized to 1.6× at 125 °C) ensures consistent regulation across industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 3.4 mΩ @ 4.5 V; Qg = 32 nC; PowerPAIR® 3.3 × 3.3 mm package | Smaller footprint but higher RthJA (40 °C/W); limited to ≤25 A continuous | Preferred for ultra-compact, low-power embedded rails where layout area is constrained more than thermal budget |
| DMTH3006LPS-13 | RDS(on) = 3.0 mΩ @ 10 V; Qg = 44 nC; PowerSO-8 package with exposed drain | Slightly lower RDS(on) but 2.5× higher Ciss; not halogen-free certified | Selected when maximum efficiency at 10 V gate drive is prioritized over green compliance or 4.5 V controller compatibility |
Compared with IRLHS6342TRPBF and DMTH3006LPS-13, SI7664DP-T1-GE3 offers the best balance of low gate charge at 4.5 V, halogen-free compliance, and proven thermal performance in high-current computing applications-making it optimal for volume production of notebook and server VRMs.
Availability
SI7664DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook power delivery, server VRM design, and workstation GPU power stages requiring stable component supply, long-lifecycle support, and full RoHS/halogen-free compliance.
Supply support for SI7664DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7664DP belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current synchronous rectification in computing and communications infrastructure power supplies.
FAQ
What is the maximum continuous drain current rating for SI7664DP-T1-GE3 at 70 °C case temperature?
The SI7664DP-T1-GE3 supports 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package and must be validated against actual board layout and airflow conditions in the final design using SI7664DP-T1-GE3.
Does SI7664DP-T1-GE3 support 4.5 V gate drive for full enhancement?
Yes, SI7664DP-T1-GE3 is fully enhanced at VGS = 4.5 V, delivering RDS(on) = 3.6 mΩ at ID = 20 A and TJ = 25 °C. Its VGS(th) range of 0.6–1.8 V ensures reliable turn-on with standard 3.3 V or 4.5 V logic-level controllers, making SI7664DP-T1-GE3 suitable for modern low-voltage PWM ICs.
What is the thermal resistance from junction to case (RthJC) for SI7664DP-T1-GE3?
The SI7664DP-T1-GE3 has a typical junction-to-case thermal resistance of 1.0 °C/W and maximum of 1.5 °C/W, measured from die junction to the exposed drain pad. This low RthJC enables efficient heat transfer to the PCB thermal plane and is critical for maintaining TJ < 150 °C in high-current SI7664DP-T1-GE3 applications.
Is SI7664DP-T1-GE3 qualified for reflow soldering per JEDEC J-STD-020?
Yes, SI7664DP-T1-GE3 is rated for peak reflow temperature of 260 °C per JEDEC J-STD-020, matching its lead-free and halogen-free construction. The PowerPAK SO-8 package requires adherence to Vishay's recommended solder profile (Document 73257) to ensure reliable interconnection without voiding the exposed copper drain pad, as specified for SI7664DP-T1-GE3.
How is the body diode performance of SI7664DP-T1-GE3 characterized for synchronous rectification?
The SI7664DP-T1-GE3 body diode is characterized with VSD = 0.73–1.1 V at IS = 5 A and reverse recovery time trr = 35–55 ns at IF = 10 A, di/dt = 100 A/µs. These parameters enable efficient freewheeling in synchronous buck topologies and reduce switching losses compared to external Schottky solutions-key for SI7664DP-T1-GE3's role in high-efficiency VRMs.
SI7664DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 125 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7770 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7664DP-T1-GE3 FAQ
1.How can I place an order for SI7664DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7664DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7664DP-T1-GE3 reliable?
The price and inventory of SI7664DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7664DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7664DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7664DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7664DP-T1-GE3?
SI7664DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7664DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7664DP-T1-GE3?
For technical support, including SI7664DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7664DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7664DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7664DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7664DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7664DP-T1-GE3?
All SI7664DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7664DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7664DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7664DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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