My Inquiry
My Account
Vishay Siliconix SI7668ADP-T1-GE3
- Part No.:
- SI7668ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7668ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,918
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI7668ADP-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 30-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with RDS(on) = 3.0 mΩ at VGS = 10 V and 3.4 mΩ at VGS = 4.5 V, used as a low-side switch in notebook VRM modules and telecom DC/DC converters.
For engineers reviewing the SI7668ADP-T1-GE3 datasheet, SI7668ADP-T1-GE3 pinout, SI7668ADP-T1-GE3 application, or SI7668ADP-T1-GE3 equivalent, key selection considerations include its 30-V VDS, 52 nC total gate charge at 4.5 V drive, 1.0 °C/W junction-to-case thermal resistance, PowerPAK® SO-8 footprint compatibility with standard SO-8 layouts, and halogen-free compliance per IEC 61249-2-21.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance and high current density in a surface-mount PowerPAK® SO-8 package. Its gate threshold voltage (0.6–1.8 V) enables robust 4.5-V logic-level drive, while 100% Rg testing ensures consistent switching performance across production lots.
The device features an integrated body diode with 0.70–1.1 V forward voltage at 4.3 A and 46–65 ns reverse recovery time, supporting synchronous rectification in high-frequency buck converters. Thermal design leverages the exposed drain pad for direct board heat sinking, achieving RthJC = 1.0 °C/W (typ.) and RthJA = 18 °C/W (typ.) on 1" × 1" FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 12-V and 24-V input DC/DC stages. |
| RDS(on) @ VGS = 10 V | 3.0 mΩ - Enables <1 W conduction loss at 25 A, critical for high-efficiency VRM output stages. |
| RDS(on) @ VGS = 4.5 V | 3.4 mΩ - Supports direct drive from 5-V or 4.5-V PWM controllers without level-shifting. |
| Qg | 52 nC (at 4.5 V) - Determines gate driver power requirement and switching loss in 300–1000 kHz converters. |
| ID (continuous, TC = 25 °C) | 40 A - Sustained current capability when mounted on heatsinked PCB area; derates to 32 A at TC = 70 °C. |
| RthJC | 1.0 °C/W (typ.) - Low thermal resistance from junction to exposed drain pad enables efficient heat transfer to PCB copper. |
| VGS(th) | 0.6–1.8 V - Wide threshold range ensures reliable turn-on with margin against noise-induced false triggering. |
Pinout & Package
SI7668ADP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm), identical in footprint and pinout to standard SO-8 but with an exposed bottom-side drain pad for enhanced thermal performance. The package uses a single-die N-channel configuration with four drain terminals, one source, and one gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤12 V drive; 0.5–1.5 Ω gate resistance affects switching speed and ringing. |
| 2 (S) | Source | Reference node for gate drive and current sensing; connects to power ground plane in low-side topology. |
| 3 (D) | Drain | Main power output node; all four drain terminals (pins 3, 4, 7, 8) are internally tied and must be soldered to a common large copper pour. |
| 4 (D) | Drain | Parallel drain connection; shares current path with pins 3, 7, 8 to reduce package inductance and resistive loss. |
| 7 (D) | Drain | Exposed bottom-side drain pad contact point; primary thermal path to PCB; no solder fillet required at tip. |
| 8 (D) | Drain | Secondary top-side drain terminal; provides mechanical stability and additional current-carrying capacity. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Enables 3.0 mΩ RDS(on) at 30 V in SO-8 footprint-matching DPAK thermal performance without larger package. |
| 100% Rg tested | Guarantees gate resistance between 0.5–1.5 Ω, ensuring predictable turn-on/turn-off timing and EMI control. |
| PowerPAK® SO-8 package | Same PCB land pattern as standard SO-8; eliminates layout redesign while delivering 10× lower RthJA than legacy SO-8. |
| Halogen-free construction | Complies with IEC 61249-2-21; supports RoHS-compliant and environmentally regulated end equipment. |
| Low Qgd/Qg ratio | 8 nC / 52 nC = 0.15 - Reduces Miller effect, enabling stable 4.5-V gate drive and minimizing shoot-through risk. |
Applications
| Server VRM Output Stage | Notebook CPU Core Supply |
|---|---|
Use Scenario: High-current, high-frequency synchronous buck converter supplying 0.8–1.5 V to multi-core Xeon or EPYC processors. IC Role / Device Role: Low-side power switch handling up to 40 A DC current with minimal conduction loss. Use Value: 3.0 mΩ RDS(on) limits I²R loss to <3.2 W at 40 A, enabling >95% efficiency at full load while maintaining TJ < 125 °C on 4-layer board. | Use Scenario: Compact 3-phase VRM on ultrabook motherboard delivering 1–25 A to Intel Core i-series CPUs. IC Role / Device Role: Low-side FET in interleaved buck stage, driven directly by 5-V PWM controller outputs. Use Value: 3.4 mΩ RDS(on) at 4.5 V ensures full enhancement without gate boosting, simplifying driver design and reducing BOM count. |
| Fixed Telecom DC/DC Module | Industrial PoE+ PSE Controller |
Use Scenario: 48-V input to 12-V intermediate bus converter in carrier-grade access equipment. IC Role / Device Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology. Use Value: Fast 46–65 ns body diode recovery and low Qrr (51–80 nC) minimize reverse recovery loss during hard commutation. | Use Scenario: 57-V powered device interface where MOSFET switches 30-V auxiliary supply under IEEE 802.3at control. IC Role / Device Role: Current-limiting switch in PoE+ power sourcing equipment (PSE) detection/classification circuitry. Use Value: 30-V VDS rating provides 27-V headroom above 30-V PoE+ classification voltage, ensuring robust overvoltage tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7446DP-T1-GE3 | RDS(on) = 3.2 mΩ @ 10 V; Qg = 54 nC; same PowerPAK® SO-8 package and pinout. | Near-identical thermal and electrical specs; validated in same VRM reference designs as SI7668ADP-T1-GE3. | Drop-in replacement where minor RDS(on) variance is acceptable; preferred for dual-FET phase-leg layouts due to matched pairing. |
| IRF7470PBF | RDS(on) = 3.3 mΩ @ 10 V; Qg = 62 nC; standard SO-8 package with higher RthJA = 65 °C/W. | Higher switching loss due to +10 nC Qg and inferior thermal performance; requires larger heatsinking. | Only suitable if existing SO-8 land pattern cannot be modified; avoid in space-constrained or thermally limited designs. |
Compared with SI7668ADP-T1-GE3, Si7446DP-T1-GE3 offers functionally identical performance with negligible trade-offs, while IRF7470PBF sacrifices thermal efficiency and gate drive efficiency for legacy SO-8 compatibility-making SI7668ADP-T1-GE3 optimal for new designs prioritizing power density and efficiency.
Availability
SI7668ADP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM modules, notebook CPU power delivery, and fixed telecom DC/DC converters requiring stable component supply, halogen-free compliance, and high-current low-RDS(on) performance.
Supply support for SI7668ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7668ADP-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered for high-current, high-frequency DC/DC conversion in computing and communications infrastructure where low conduction loss and thermal robustness are critical.
FAQ
What is the maximum continuous drain current rating for SI7668ADP-T1-GE3 at 70 °C case temperature?
The SI7668ADP-T1-GE3 is rated for 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating from 40 A at 25 °C reflects thermal limitations of the PowerPAK® SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient conditions.
Does SI7668ADP-T1-GE3 support 4.5-V gate drive in practical applications?
Yes, SI7668ADP-T1-GE3 is fully characterized for 4.5-V operation: RDS(on) = 3.4 mΩ at VGS = 4.5 V and ID = 22 A, and VGS(th) max is 1.8 V. Its low threshold and tight distribution ensure reliable enhancement with standard 5-V logic drivers, eliminating need for gate boosters in most VRM designs.
How does the PowerPAK® SO-8 package of SI7668ADP-T1-GE3 improve thermal performance versus standard SO-8?
The SI7668ADP-T1-GE3 PowerPAK® SO-8 achieves RthJC = 1.0 °C/W (typ.), matching DPAK performance, versus ~16 °C/W for standard SO-8. This 16× lower junction-to-case resistance results from the exposed drain pad directly bonded to PCB copper, reducing die temperature rise by ~40 °C at 2.7 W dissipation compared to legacy SO-8.
Is SI7668ADP-T1-GE3 pin-compatible with standard SO-8 footprints?
Yes, SI7668ADP-T1-GE3 uses the exact same 5.15 mm × 6.15 mm outline and pin numbering as standard SO-8, with pins 1 (G), 2 (S), 3/4/7/8 (D). It mounts directly to existing SO-8 land patterns, though optimal thermal performance requires extending the drain pad per Vishay Application Note AN821.
What is the body diode forward voltage specification for SI7668ADP-T1-GE3?
The SI7668ADP-T1-GE3 body diode has a forward voltage VSD of 0.70–1.1 V at IS = 4.3 A and TJ = 25 °C. This low VSD minimizes conduction loss during dead-time conduction in synchronous buck converters, contributing to overall system efficiency.
SI7668ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 170 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8820 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7668ADP-T1-GE3 FAQ
1.How can I place an order for SI7668ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7668ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7668ADP-T1-GE3 reliable?
The price and inventory of SI7668ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7668ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7668ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7668ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7668ADP-T1-GE3?
SI7668ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7668ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7668ADP-T1-GE3?
For technical support, including SI7668ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7668ADP-T1-GE3 requirements.
6.How does Aetrix verify that SI7668ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7668ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7668ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7668ADP-T1-GE3?
All SI7668ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7668ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7668ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7668ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI7668ADP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
