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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7674DP-T1-E3

Name: SI7674DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7674DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7674DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7674DP-T1-E3.pdf

Description:: MOSFET N-CH 30V 40A PPAK SO-8

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Product details

Overview

SI7674DP-T1-E3 from Vishay Siliconix is a N-channel 30 V (D-S) MOSFET optimized for high-efficiency DC/DC conversion in notebook core power stages, featuring R_DS(on) = 3.3 mΩ at V_GS = 10 V, Q_g = 37 nC (typ.), 40 A continuous drain current at T_C = 25 °C, and PowerPAK SO-8 leadless package.

For engineers reviewing the SI7674DP-T1-E3 datasheet, SI7674DP-T1-E3 pinout, SI7674DP-T1-E3 application, or SI7674DP-T1-E3 equivalent, key selection criteria include low gate charge for fast switching, tight R_DS(on) tolerance at 4.5 V drive, avalanche ruggedness (E_AS = 80 mJ), and thermal performance in high-density notebook VRMs.

Technical Context

This MOSFET employs trench MOSFET technology with optimized cell layout to minimize Q_gd/Q_g ratio, reducing switching losses in synchronous buck converters. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables robust 4.5 V logic-level drive compatibility while maintaining noise immunity.

The device integrates 100 % R_g, capacitance, and avalanche testing per unit, and its PowerPAK SO-8 package delivers 1.5 °C/W typical R_thJC for direct heatsink coupling - critical for thermally constrained notebook CPU/GPU VRM phases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 5 V–12 V input rails in notebook core DC/DC converters.
R_DS(on)	3.3 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 40 A, supporting high-current CPU/GPU power delivery.
Q_g	37 nC (typ.) - Low total gate charge reduces driver power and enables >1 MHz switching in compact VRMs.
I_D (cont.)	40 A at T_C = 25 °C - Sustains peak load currents in multi-phase notebook VRMs without derating.
E_AS	80 mJ - Avalanche energy rating ensures robustness against inductive switching transients in synchronous rectification.
R_thJC	1.0 °C/W (typ.) - Enables direct thermal path to PCB copper or heatsink, critical for thermal management in thin-profile notebooks.

Pinout & Package

SI7674DP-T1-E3 uses the PowerPAK SO-8 leadless surface-mount package (6.15 mm × 5.15 mm), with exposed drain pads on the bottom for enhanced thermal conduction and current handling. The package is RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal parallel die; low-inductance return path for high di/dt switching currents.
5, 6, 7, 8	Drain (D)	Exposed copper drain pad (bottom side); primary thermal and current path to PCB ground plane or heatsink.
G (Pin 3 of standard SO-8 footprint)	Gate (G)	Single gate terminal (top-side lead); designed for low-R_g (0.95–1.5 Ω) to control Miller plateau timing.

Key Features

Feature	Design Value
Extremely low Q_gd	6.8 nC - Minimizes Miller-induced turn-off delay and dv/dt-induced shoot-through risk in high-frequency synchronous buck stages.
100 % R_g tested	Guarantees gate resistance between 0.95–1.5 Ω - ensures consistent gate drive timing and predictable switching behavior across production lots.
100 % avalanche tested	Validates E_AS ≥ 80 mJ per unit - eliminates field failures from inductive energy dissipation during hard-switching events.
PowerPAK SO-8 package	Leadless construction with exposed drain - achieves 1.0 °C/W R_thJC and supports >40 A continuous current without thermal throttling.

Applications

Core Notebook DC/DC Converter	GPU Voltage Regulator Module
Use Scenario: High-current, high-efficiency step-down conversion for Intel/AMD mobile CPUs in ultrabooks and 2-in-1 devices. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) in multiphase buck converter delivering up to 100 A at ≤1 V. Use Value: 3.3 mΩ R_DS(on) and 37 nC Q_g reduce combined conduction + switching losses by >15 % vs. legacy 5 mΩ MOSFETs at 1 MHz operation.	Use Scenario: Compact, thermally dense VRM supplying discrete or integrated GPU cores in gaming laptops and mobile workstations. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power switch operating in parallel with matched high-side FETs in 3+1 or 4+1 phase topologies. Use Value: 1.0 °C/W R_thJC enables direct thermal coupling to internal copper layers, sustaining 40 A continuous current without external heatsinks.
Server Board Management Unit PSU	Industrial Embedded DC/DC Module
Use Scenario: Auxiliary 12 V-to-3.3 V/5 V conversion for BMC, CPLD, and memory interface power in 1U/2U server motherboards. IC Role / Device Role / Timing Role: Primary switching FET in isolated or non-isolated buck regulator powering always-on subsystems. Use Value: 100 % avalanche testing ensures reliability under transient overloads caused by hot-swap events or firmware resets.	Use Scenario: Ruggedized point-of-load regulator in industrial HMIs, PLC I/O modules, and railway computing systems requiring extended temperature operation. IC Role / Device Role / Timing Role: Main power switch in sealed, convection-cooled DC/DC modules rated for -40 °C to +125 °C ambient. Use Value: R_DS(on) shift ≤15 % from -55 °C to +150 °C enables stable output regulation across full industrial temperature range.

Core Notebook DC/DC Converter

GPU Voltage Regulator Module

Use Scenario: High-current, high-efficiency step-down conversion for Intel/AMD mobile CPUs in ultrabooks and 2-in-1 devices.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) in multiphase buck converter delivering up to 100 A at ≤1 V.

Use Value: 3.3 mΩ R_DS(on) and 37 nC Q_g reduce combined conduction + switching losses by >15 % vs. legacy 5 mΩ MOSFETs at 1 MHz operation.

Use Scenario: Compact, thermally dense VRM supplying discrete or integrated GPU cores in gaming laptops and mobile workstations.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power switch operating in parallel with matched high-side FETs in 3+1 or 4+1 phase topologies.

Use Value: 1.0 °C/W R_thJC enables direct thermal coupling to internal copper layers, sustaining 40 A continuous current without external heatsinks.

Server Board Management Unit PSU

Industrial Embedded DC/DC Module

Use Scenario: Auxiliary 12 V-to-3.3 V/5 V conversion for BMC, CPLD, and memory interface power in 1U/2U server motherboards.

IC Role / Device Role / Timing Role: Primary switching FET in isolated or non-isolated buck regulator powering always-on subsystems.

Use Value: 100 % avalanche testing ensures reliability under transient overloads caused by hot-swap events or firmware resets.

Use Scenario: Ruggedized point-of-load regulator in industrial HMIs, PLC I/O modules, and railway computing systems requiring extended temperature operation.

IC Role / Device Role / Timing Role: Main power switch in sealed, convection-cooled DC/DC modules rated for -40 °C to +125 °C ambient.

Use Value: R_DS(on) shift ≤15 % from -55 °C to +150 °C enables stable output regulation across full industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.1 mΩ @ 10 V, Q_g = 32 nC, same PowerSO-8 package but with plated drain terminals.	Slightly lower Q_g improves light-load efficiency; lacks 100 % avalanche test documentation.	Preferred where gate drive loss dominates and avalanche stress is minimal; verify layout compatibility with plated vs. exposed drain.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V, Q_g = 45 nC, SO-8 package with standard leads (not leadless).	Lower R_DS(on) reduces conduction loss but higher Q_g increases switching loss above 500 kHz; larger R_thJA (23 °C/W).	Best for lower-frequency (<300 kHz), high-current applications where thermal margin allows through-hole or gull-wing cooling.

Compared with SI7674DP-T1-E3, IRLHS6342TRPBF offers marginal Q_g advantage but less documented avalanche ruggedness, while DMN3025LSD-13 trades higher switching loss for lower conduction loss and conventional packaging - making SI7674DP-T1-E3 optimal for thermally constrained, high-frequency notebook VRMs.

Availability

SI7674DP-T1-E3 is available at Aetrix Electronics and suitable for notebook core power supplies, GPU VRMs, and industrial embedded DC/DC modules requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for SI7674DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The Si7674DP series was developed specifically for high-density, high-efficiency synchronous buck converters in portable computing - emphasizing low Q_gd, tight R_DS(on) distribution, and robust thermal packaging.

FAQ

What is the maximum continuous drain current for SI7674DP-T1-E3 at 70 °C case temperature?

The SI7674DP-T1-E3 supports 32 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package under sustained high-power operation, and must be validated against actual board layout and airflow conditions in the final design using SI7674DP-T1-E3.

Does SI7674DP-T1-E3 support 4.5 V gate drive in practical notebook applications?

Yes, SI7674DP-T1-E3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 4.6 mΩ (max) and 40 A ID capability - enabling reliable operation with standard 5 V logic drivers in notebook VRMs. Its V_GS(th) range (1.0–3.0 V) ensures turn-on margin even with gate drive droop under load, as confirmed in the SI7674DP-T1-E3 datasheet.

Is SI7674DP-T1-E3 qualified for automotive applications?

No, SI7674DP-T1-E3 is not AEC-Q101 qualified and is intended for commercial and industrial applications only. It lacks automotive-specific reliability testing, extended temperature validation beyond -55 °C to +150 °C junction range, and PPAP documentation required for automotive use - refer to the official Vishay product page for SI7674DP-T1-E3 for full compliance status.

What is the thermal resistance from junction to case (R_thJC) for SI7674DP-T1-E3?

The SI7674DP-T1-E3 has a typical junction-to-case thermal resistance (R_thJC) of 1.0 °C/W, with a maximum of 1.5 °C/W, measured from junction to the exposed drain pad. This low value is enabled by the PowerPAK SO-8's copper-clip construction and is critical for transferring heat directly to PCB copper or heatsinks in space-constrained notebook designs using SI7674DP-T1-E3.

How does the avalanche rating of SI7674DP-T1-E3 impact system reliability?

The SI7674DP-T1-E3 is 100 % tested for single-pulse avalanche energy (E_AS = 80 mJ), ensuring each unit can safely absorb inductive energy during switching transients - such as those caused by PCB trace inductance or load dump in notebook VRMs. This eliminates latent failure modes and improves long-term reliability in SI7674DP-T1-E3-based power stages without requiring external snubbers.

SI7674DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5910 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7674DP-T1-E3 FAQ

1.How can I place an order for SI7674DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7674DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7674DP-T1-E3 reliable?

The price and inventory of SI7674DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7674DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7674DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7674DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7674DP-T1-E3?

SI7674DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7674DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7674DP-T1-E3?

For technical support, including SI7674DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7674DP-T1-E3 requirements.

6.How does Aetrix verify that SI7674DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7674DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7674DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7674DP-T1-E3?

All SI7674DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7674DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7674DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7674DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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