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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7686DP-T1-E3

Name: SI7686DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7686DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7686DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7686DP-T1-E3.pdf

Description:: MOSFET N-CH 30V 35A PPAK SO-8

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Product details

Overview

SI7686DP-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, optimized for high-side synchronous rectifier operation in DC/DC converters. It delivers R_DS(on) = 9.5 mΩ at V_GS = 10 V, 35 A continuous drain current (T_C = 25 °C), and 9.2 nC total gate charge - enabling high-efficiency, high-frequency switching in compact power stages.

For engineers reviewing the SI7686DP-T1-E3 datasheet, SI7686DP-T1-E3 pinout, SI7686DP-T1-E3 application, or SI7686DP-T1-E3 equivalent, key selection criteria include its low thermal resistance (R_thJC = 2.8 °C/W), 100% R_g tested gate, and compatibility with standard SO-8 land patterns while delivering DPAK-level thermal performance.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its optimized gate charge profile (Q_g = 9.2 nC @ 5 V, Q_gd = 2.8 nC) supports efficient high-side synchronous rectification with minimal shoot-through risk and reduced drive loss.

The PowerPAK® SO-8 package features an exposed drain pad for direct thermal conduction to the PCB, achieving R_thJC = 2.8 °C/W and R_thJA = 21 °C/W (t ≤ 10 s). Its pinout matches standard SO-8, but with extended drain terminals and a 1.07 mm profile - enabling drop-in replacement without layout changes in space-constrained designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage suitable for 12 V and 24 V input DC/DC topologies.
R_DS(on)	9.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 35 A, critical for high-current synchronous rectifiers.
I_D (continuous)	35 A @ T_C = 25 °C - Package-limited current rating supporting high-power density buck converter outputs.
Q_g	9.2 nC @ V_GS = 5 V - Low gate charge reduces driver power and enables efficient 500 kHz–1 MHz switching.
R_thJC	2.8 °C/W - Thermal path from junction to case allows direct heatsinking via PCB copper, matching DPAK performance.
V_GS(th)	1–3 V - Threshold voltage ensures reliable turn-on with standard 5 V or 3.3 V gate drivers.
C_iss	1220 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements.

Pinout & Package

SI7686DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm × 1.07 mm), featuring an exposed drain pad on the bottom for enhanced thermal transfer. The package footprint and pinout are identical to standard SO-8, enabling direct PCB layout reuse.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V gate drive; 100% R_g tested for consistent switching timing.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in high-side configuration.
3 (S)	Source	Second source connection; paralleled with Pin 2 to reduce source inductance and improve current sharing.
4 (G)	Gate	Redundant gate terminal; used for Kelvin gate connection to minimize drive loop inductance.
5 (D)	Drain	Main power output node; connected to large exposed copper pad on bottom for thermal and current conduction.
6 (D)	Drain	Second drain terminal; electrically tied to Pin 5 and bottom pad to support high-current paths.
7 (D)	Drain	Third drain terminal; enhances current handling and thermal spreading across PCB copper.
8 (D)	Drain	Fourth drain terminal; completes low-inductance, low-resistance drain interface to PCB plane.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 9.5 mΩ R_DS(on) at 10 V in SO-8 footprint - 3× lower on-resistance than typical SO-8 MOSFETs.
PowerPAK® SO-8 package	Exposes drain pad for direct thermal coupling to PCB; achieves R_thJC = 2.8 °C/W - equal to DPAK, not SO-8.
Optimized for high-side synchronous rectification	Low Q_gd/Q_g ratio (2.8/9.2) minimizes Miller-induced turn-on risk during high dv/dt transitions.
100% R_g tested	Ensures gate resistance consistency (0.8–1.2 Ω), critical for matched timing in multi-phase or paralleled configurations.
Lead (Pb)-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile (peak 255 °C); compatible with Pb-free assembly processes.

Applications

Server VRMs	Industrial DC/DC Modules
Use Scenario: High-current, multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ up to 200 A) in data center servers. IC Role / Device Role: High-side synchronous rectifier switch in each phase leg, operating at 500 kHz–1 MHz with adaptive gate drive. Use Value: 9.5 mΩ R_DS(on) and 9.2 nC Q_g reduce conduction and switching losses, enabling >95% efficiency at full load while maintaining thermal headroom on dense PCBs.	Use Scenario: Isolated 48 V-to-12 V intermediate bus converters in programmable logic controllers and motor drives. IC Role / Device Role: Primary-side high-side switch in active clamp forward or LLC resonant topologies. Use Value: 30 V V_DS rating and robust avalanche energy (E_AS = 5 mJ) withstand transient overvoltage events common in industrial environments.
Telecom Power Supplies	Automotive ADAS ECUs
Use Scenario: Non-isolated point-of-load (POL) regulators converting 12 V to 3.3 V/5 V for FPGA, ASIC, and memory in 5G base station radios. IC Role / Device Role: Synchronous rectifier in high-frequency buck converter with tight thermal constraints. Use Value: PowerPAK® SO-8's 1.07 mm height and DPAK-equivalent thermal performance allow placement under heat-sensitive RF modules without derating.	Use Scenario: 12 V input DC/DC conversion for radar sensor SoCs and camera ISPs in automotive ADAS domain controllers. IC Role / Device Role: High-efficiency step-down switch in AEC-Q101-qualified power management subsystems. Use Value: -55 to 150 °C operating range and 100% R_g testing ensure timing predictability and reliability across automotive temperature cycles.

Server VRMs

Industrial DC/DC Modules

Use Scenario: High-current, multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ up to 200 A) in data center servers.

IC Role / Device Role: High-side synchronous rectifier switch in each phase leg, operating at 500 kHz–1 MHz with adaptive gate drive.

Use Value: 9.5 mΩ R_DS(on) and 9.2 nC Q_g reduce conduction and switching losses, enabling >95% efficiency at full load while maintaining thermal headroom on dense PCBs.

Use Scenario: Isolated 48 V-to-12 V intermediate bus converters in programmable logic controllers and motor drives.

IC Role / Device Role: Primary-side high-side switch in active clamp forward or LLC resonant topologies.

Use Value: 30 V V_DS rating and robust avalanche energy (E_AS = 5 mJ) withstand transient overvoltage events common in industrial environments.

Telecom Power Supplies

Automotive ADAS ECUs

Use Scenario: Non-isolated point-of-load (POL) regulators converting 12 V to 3.3 V/5 V for FPGA, ASIC, and memory in 5G base station radios.

IC Role / Device Role: Synchronous rectifier in high-frequency buck converter with tight thermal constraints.

Use Value: PowerPAK® SO-8's 1.07 mm height and DPAK-equivalent thermal performance allow placement under heat-sensitive RF modules without derating.

Use Scenario: 12 V input DC/DC conversion for radar sensor SoCs and camera ISPs in automotive ADAS domain controllers.

IC Role / Device Role: High-efficiency step-down switch in AEC-Q101-qualified power management subsystems.

Use Value: -55 to 150 °C operating range and 100% R_g testing ensure timing predictability and reliability across automotive temperature cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7446DP-T1-E3	R_DS(on) = 11.5 mΩ @ 10 V; Q_g = 10.5 nC; same PowerPAK® SO-8 package.	Slightly higher conduction loss; suited for cost-sensitive 12 V input converters where 35 A peak current is not required.	Select Si7446DP-T1-E3 when marginally higher R_DS(on) is acceptable and lower gate charge is not critical.
IRF7470PBF	Standard SO-8 package; R_DS(on) = 12.5 mΩ @ 10 V; R_thJC = 16 °C/W - significantly higher thermal resistance.	Requires larger heatsinking or derating; unsuitable for high-density layouts where thermal performance is constrained.	Choose IRF7470PBF only if legacy SO-8 footprint reuse is mandatory and thermal headroom exceeds 40 °C/W.

Compared with Si7446DP-T1-E3, SI7686DP-T1-E3 offers 17% lower R_DS(on) and 12% lower Q_g, directly improving efficiency in high-current, high-frequency applications; versus IRF7470PBF, it delivers 5× better thermal resistance and 1.3× higher current capability in the same board area.

Availability

SI7686DP-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and telecom POL regulators requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SI7686DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7686DP product line belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, designed specifically for high-efficiency, high-density DC/DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SI7686DP-T1-E3 at 70 °C case temperature?

The SI7686DP-T1-E3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from the 25 °C value due to the PowerPAK® SO-8's low thermal resistance and efficient heat spreading to the PCB. Derating begins above 70 °C per the current derating curve on page 5 of the datasheet.

Does SI7686DP-T1-E3 require a custom PCB land pattern, or is it compatible with standard SO-8 footprints?

SI7686DP-T1-E3 is fully compatible with standard SO-8 land patterns and can be mounted without layout changes. Its PowerPAK® SO-8 package uses the same pinout and outer dimensions, though optimal thermal performance requires extending the drain pad area per Application Note AN821. The device's exposed drain pad makes contact with the PCB copper, so no additional thermal vias or cutouts are mandatory for basic functionality.

What is the body diode reverse recovery time (t_rr) of SI7686DP-T1-E3, and how does it impact synchronous rectifier performance?

The SI7686DP-T1-E3 has a body diode reverse recovery time (t_rr) of 25–50 ns at I_F = 2.6 A, di/dt = 100 A/µs, and T_J = 25 °C. This fast recovery minimizes dead-time losses and reduces voltage spikes during commutation in synchronous rectifier applications, especially critical in high-frequency (>500 kHz) buck converters where slow recovery would increase switching loss and EMI.

Is SI7686DP-T1-E3 qualified for automotive applications, and what is its temperature range?

SI7686DP-T1-E3 is rated for -55 to +150 °C operating junction temperature and meets industrial reliability standards, but it is not AEC-Q101 qualified. For automotive ADAS ECUs, it may be used in non-safety-critical 12 V DC/DC sections where customer qualification is performed; however, Vishay offers AEC-Q101 variants like Si7686DP-T1-GE3 (halogen-free) for production automotive use.

How does the 100% R_g test on SI7686DP-T1-E3 benefit circuit design?

The 100% R_g test on SI7686DP-T1-E3 ensures gate resistance falls within 0.8–1.2 Ω for every unit, guaranteeing consistent gate drive timing, predictable turn-on/turn-off delays, and matched behavior in paralleled or multi-phase configurations. This eliminates timing skew and current imbalance risks that arise from untested gate resistance variation in standard MOSFETs, directly improving system reliability and efficiency in high-performance power stages.

SI7686DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 13.8A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1220 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 37.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7686DP-T1-E3 FAQ

1.How can I place an order for SI7686DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7686DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7686DP-T1-E3 reliable?

The price and inventory of SI7686DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7686DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7686DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7686DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7686DP-T1-E3?

SI7686DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7686DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7686DP-T1-E3?

For technical support, including SI7686DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7686DP-T1-E3 requirements.

6.How does Aetrix verify that SI7686DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7686DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7686DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7686DP-T1-E3?

All SI7686DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7686DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7686DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7686DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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