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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7686DP-T1-GE3

Name: SI7686DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7686DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7686DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7686DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 35A PPAK SO-8

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Product details

Overview

SI7686DP-T1-GE3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, optimized for high-side synchronous rectifier operation in DC/DC converters. It delivers R_DS(on) = 9.5 mΩ at V_GS = 10 V, 35 A continuous drain current (T_J = 150 °C), and 9.2 nC total gate charge - enabling high-efficiency, high-frequency switching in compact power stages.

For engineers reviewing the SI7686DP-T1-GE3 datasheet, SI7686DP-T1-GE3 pinout, SI7686DP-T1-GE3 application, or SI7686DP-T1-GE3 equivalent, key selection criteria include its low thermal resistance (R_thJC = 2.8 °C/W), halogen-free/lead-free compliance, 100 % R_g tested gate, and compatibility with standard SO-8 land patterns while delivering DPAK-level thermal performance.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Q_g = 9.2 nC @ 5 V, Q_gd = 2.8 nC) supports efficient high-side synchronous rectification with minimal turn-off delay (t_d(off) = 23–35 ns @ V_GEN = 10 V) and low reverse recovery charge (Q_rr = 15–30 nC).

The device is thermally engineered for direct board-mount heat transfer: the exposed drain pad provides a low-impedance junction-to-case path (R_thJC = 2.8 °C/W), and its 1.07 mm profile enables space-constrained designs. Absolute maximum ratings include V_DS = 30 V, V_GS = ±20 V, and I_D = 35 A (T_C = 25 °C), with avalanche energy rating E_AS = 5 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications with margin
R_DS(on)	9.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 32 A in high-current POL stages
I_D (continuous)	35 A @ T_C = 25 °C - Package-limited current handling suitable for 50 W+ buck converters
Q_g	9.2 nC @ V_GS = 5 V - Low gate drive energy supports 1–2 MHz switching without excessive driver loss
R_thJC	2.8 °C/W (typ.) - Enables >24 W dissipation with 70 °C temperature rise to heatsink or PCB copper
V_GS(th)	1–3 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers
Q_rr	15–30 nC - Low body diode recovery charge reduces shoot-through risk and EMI in synchronous rectifiers

Pinout & Package

SI7686DP-T1-GE3 uses the leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm × 1.07 mm), with identical footprint and pinout to standard SO-8 but featuring an exposed drain pad for enhanced thermal conduction. The package is RoHS-compliant, lead-free, and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Exposed copper drain pad (bottom side) serves as primary thermal and current path to PCB copper
3 (top side)	Gate (G)	Single gate terminal located between source pins - optimized for low-inductance gate loop layout

Key Features

Feature	Design Value
TrenchFET® technology	Delivers 30 % lower R_DS(on) vs. planar MOSFETs of same die size, improving conduction efficiency
PowerPAK® SO-8 package	Matches SO-8 footprint while achieving DPAK-equivalent R_thJC (2.8 °C/W), enabling drop-in thermal upgrade
Optimized for high-side sync rectification	Low Q_gd/Q_g ratio (0.3) and fast t_f (8–15 ns) minimize dead-time losses and voltage overshoot
100 % R_g tested	Guarantees gate resistance ≤ 1.2 Ω, ensuring consistent switching speed and driver stress across production lots
Halogen-free & Pb-free	Meets IPC-4101D/21 and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for robust reflow reliability

Applications

Server VRM Power Stage	Industrial DC/DC Module
Use Scenario: High-current, high-efficiency 12 V → 1.8 V point-of-load conversion in dual-processor server motherboards. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in interleaved 2-phase buck converter operating at 500 kHz–1 MHz. Use Value: 9.5 mΩ R_DS(on) and 9.2 nC Q_g reduce conduction + switching losses by ~18 % vs. legacy SO-8 MOSFETs, enabling >94 % efficiency at 40 A load.	Use Scenario: Compact 48 V → 12 V isolated DC/DC converter for programmable logic controllers (PLCs) with strict thermal envelope. IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward topology, requiring robust avalanche capability and low gate charge. Use Value: 5 mJ E_AS rating and 2.8 °C/W R_thJC allow safe operation under transient overloads without external heatsink, reducing BOM count.
Telecom Base Station PSU	Automotive ADAS Power Supply
Use Scenario: 48 V intermediate bus converter supplying 5 V/3.3 V rails to RF transceivers and FPGAs in macro cell base stations. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter, demanding low Q_rr and tight V_GS(th) distribution. Use Value: 15–30 nC Q_rr and 1–3 V V_GS(th) ensure clean zero-voltage switching transitions and stable light-load regulation.	Use Scenario: 12 V → 5 V/3.3 V power supply for camera sensor modules and radar processors in autonomous driving ECUs. IC Role / Device Role / Timing Role: High-reliability high-side switch in automotive-grade buck regulator, operating from -40 °C to 125 °C ambient. Use Value: Qualified per AEC-Q101, with R_DS(on) stable over temperature (normalized to 1.6× at 125 °C), ensuring consistent efficiency across full automotive temperature range.

Server VRM Power Stage

Industrial DC/DC Module

Use Scenario: High-current, high-efficiency 12 V → 1.8 V point-of-load conversion in dual-processor server motherboards.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in interleaved 2-phase buck converter operating at 500 kHz–1 MHz.

Use Value: 9.5 mΩ R_DS(on) and 9.2 nC Q_g reduce conduction + switching losses by ~18 % vs. legacy SO-8 MOSFETs, enabling >94 % efficiency at 40 A load.

Use Scenario: Compact 48 V → 12 V isolated DC/DC converter for programmable logic controllers (PLCs) with strict thermal envelope.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward topology, requiring robust avalanche capability and low gate charge.

Use Value: 5 mJ E_AS rating and 2.8 °C/W R_thJC allow safe operation under transient overloads without external heatsink, reducing BOM count.

Telecom Base Station PSU

Automotive ADAS Power Supply

Use Scenario: 48 V intermediate bus converter supplying 5 V/3.3 V rails to RF transceivers and FPGAs in macro cell base stations.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter, demanding low Q_rr and tight V_GS(th) distribution.

Use Value: 15–30 nC Q_rr and 1–3 V V_GS(th) ensure clean zero-voltage switching transitions and stable light-load regulation.

Use Scenario: 12 V → 5 V/3.3 V power supply for camera sensor modules and radar processors in autonomous driving ECUs.

IC Role / Device Role / Timing Role: High-reliability high-side switch in automotive-grade buck regulator, operating from -40 °C to 125 °C ambient.

Use Value: Qualified per AEC-Q101, with R_DS(on) stable over temperature (normalized to 1.6× at 125 °C), ensuring consistent efficiency across full automotive temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7446DP-T1-GE3	R_DS(on) = 11.5 mΩ @ 10 V; Q_g = 10.5 nC; same PowerPAK SO-8 package	Slightly higher conduction loss; better suited for cost-sensitive 20–25 A applications	Choose Si7446DP-T1-GE3 when 10–15 % higher R_DS(on) is acceptable for lower unit cost in mid-power designs.
IRF7470PBF	R_DS(on) = 10.5 mΩ @ 10 V; SO-8 package (leaded); R_thJC = 16 °C/W	Higher thermal resistance limits power density; requires larger PCB copper or heatsink	Choose IRF7470PBF only if legacy SO-8 footprint reuse is mandatory and thermal budget allows ≥40 °C/W system R_thJA.

Compared with Si7446DP-T1-GE3, SI7686DP-T1-GE3 offers lower on-resistance and gate charge for higher efficiency at 30–35 A loads; compared with IRF7470PBF, it delivers 5.7× lower junction-to-case thermal resistance, enabling 2.5× higher power density in the same PCB area.

Availability

SI7686DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, telecom power supplies, and automotive ADAS power systems requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SI7686DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si7686DP product line is part of Vishay's TrenchFET® PowerPAK® family, designed specifically for high-frequency, high-current synchronous rectification in space-constrained DC/DC converters across computing, industrial, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for SI7686DP-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI7686DP-T1-GE3 is 35 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes adequate PCB copper area for thermal dissipation. At T_A = 70 °C, the derated current drops to 14.3 A due to higher junction-to-ambient thermal resistance.

Does SI7686DP-T1-GE3 support 3.3 V gate drive in high-side synchronous rectifier configurations?

Yes, SI7686DP-T1-GE3 has a gate threshold voltage (V_GS(th)) of 1–3 V and delivers R_DS(on) = 14 mΩ at V_GS = 4.5 V, making it compatible with 3.3 V gate drivers when used with bootstrap or charge-pump gate drive circuits that elevate the gate voltage above the source. For robust turn-on, a minimum 4.5 V effective gate-source voltage is recommended.

How does the PowerPAK® SO-8 package of SI7686DP-T1-GE3 compare thermally to a standard SO-8 MOSFET?

SI7686DP-T1-GE3's PowerPAK® SO-8 package achieves R_thJC = 2.8 °C/W (typ.), which is equivalent to a DPAK package and 5.7× better than a standard SO-8 (R_thJC ≈ 16 °C/W). This allows SI7686DP-T1-GE3 to dissipate over 24 W with only a 70 °C temperature rise to the PCB, whereas a standard SO-8 would exceed thermal limits at ~4 W under identical conditions.

Is SI7686DP-T1-GE3 qualified for automotive applications?

SI7686DP-T1-GE3 is not AEC-Q101 qualified. While it operates across -55 °C to +150 °C junction temperature and meets halogen-free/Pb-free requirements, Vishay does not list it in their automotive-qualified portfolio. For automotive ADAS or infotainment power supplies, designers should verify qualification status directly with Vishay or select an explicitly AEC-Q101 rated alternative such as Si7446DP-T1-GE3 (AEC-Q101 qualified).

What is the body diode reverse recovery charge (Q_rr) of SI7686DP-T1-GE3, and why does it matter in synchronous rectifiers?

SI7686DP-T1-GE3 has a body diode reverse recovery charge (Q_rr) of 15–30 nC. In synchronous rectifiers, low Q_rr minimizes voltage spikes and switching losses during the dead-time interval when the body diode conducts before the synchronous FET turns on. This directly improves efficiency and reduces EMI in high-frequency buck and LLC converters.

SI7686DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 13.8A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1220 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 37.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7686DP-T1-GE3 FAQ

1.How can I place an order for SI7686DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7686DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7686DP-T1-GE3 reliable?

The price and inventory of SI7686DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7686DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7686DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7686DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7686DP-T1-GE3?

SI7686DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7686DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7686DP-T1-GE3?

For technical support, including SI7686DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7686DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7686DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7686DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7686DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7686DP-T1-GE3?

All SI7686DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7686DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7686DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7686DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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