Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7718DN-T1-GE3

Name: SI7718DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7718DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI7718DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7718DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 35A PPAK1212-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,725

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI7718DN-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in a PowerPAK 1212-8 package, rated for 35 A continuous drain current at T_C = 25 °C, with R_DS(on) = 6.0 mΩ at V_GS = 10 V and 8.2 mΩ at V_GS = 4.5 V, optimized for high-side switching in VRM and POL applications.

For engineers reviewing the SI7718DN-T1-GE3 datasheet, SI7718DN-T1-GE3 pinout, SI7718DN-T1-GE3 application, or SI7718DN-T1-GE3 equivalent, key selection criteria include its 13.7 nC gate charge at 4.5 V drive, 100 % UIS-tested ruggedness, halogen-free RoHS-compliant construction, and thermal resistance of 1.9 °C/W (junction-to-case), critical for compact DC-DC converter designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g/Q_gd ratio (13.7 nC total / 4.3 nC gate-drain charge), enabling efficient PWM operation in synchronous buck converters. Its gate threshold voltage (1.2–2.5 V) supports logic-level and 4.5 V gate drive compatibility.

The device integrates a robust body diode with t_rr = 19–35 ns and Q_rr = 9.5–18 nC, and is characterized for operation across –55 °C to +150 °C junction temperature, with absolute maximum V_GS = ±20 V and avalanche-rated I_AS = 20 A (E_AS = 20 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V input POL stages.
R_DS(on) @ 10 V	6.0 mΩ - Enables <1 W conduction loss at 40 A, supporting high-current VRM output stages.
R_DS(on) @ 4.5 V	8.2 mΩ - Ensures usable on-state performance with standard 5 V or 4.5 V controller gate drivers.
Q_g @ 4.5 V	13.7 nC - Low gate charge reduces driver power and switching losses in high-frequency (>500 kHz) PWM designs.
I_D (cont.)	35 A @ T_C = 25 °C - Package-limited current rating; requires adequate PCB copper area for thermal management.
R_thJC	1.9 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting or thermal via design for power density scaling.
V_GS(th)	1.2–2.5 V - Threshold range ensures reliable turn-on with margin above typical logic-high levels.

Pinout & Package

SI7718DN-T1-GE3 uses the leadless PowerPAK 1212-8 package (3.3 mm × 3.3 mm), with exposed drain pads on the bottom side for enhanced thermal conduction. The top-side terminals are arranged in a single-row configuration: Source–Source–Source–Gate–Drain–Drain–Drain–Drain.

Pin/Terminal	Circuit Role	Design Meaning
1–3 (S)	Source	Common source connection; electrically tied internally; used for return path and gate reference.
4 (G)	Gate	Control terminal; requires low-inductance routing and appropriate gate resistor to manage dV/dt and ringing.
5–8 (D)	Drain	High-current drain node; all four pins connected to internal drain metallization and bottom-side thermal pad.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers ultra-low R_DS(on) and optimized cell pitch for high current density in small footprint.
PWM-optimized switching	Low Q_gd/Q_g ratio (≈31 %) minimizes Miller-induced switching delay and improves hard-switching efficiency.
100 % UIS tested	Guarantees ruggedness under unclamped inductive switching stress-critical for POL transient reliability.
Halogen-free & RoHS-compliant	Meets IPC-1752A material declaration requirements for environmentally regulated industrial and telecom systems.
Exposed drain thermal pad	Enables <2 °C/W effective thermal path when soldered to 1-in² 2-oz copper; supports >50 W dissipation with board-level heatsinking.

Applications

VRM High-Side Switch	POL Converter Output Stage
Use Scenario: Primary high-side switch in multiphase voltage regulator modules supplying CPUs or FPGAs from 12 V bus. IC Role / Device Role / Timing Role: Synchronous rectifier switch controlling energy transfer during PWM on-time; operates at 300–1000 kHz. Use Value: 6.0 mΩ R_DS(on) and 13.7 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ≥1.2 % versus comparable 8 mΩ devices.	Use Scenario: Final-stage buck switch in point-of-load converters powering ASICs or memory subsystems on server motherboards. IC Role / Device Role / Timing Role: Main power switch in compact, high-density DC-DC modules requiring minimal board area and thermal overhead. Use Value: PowerPAK 1212-8 footprint (3.3 × 3.3 mm) and 1.9 °C/W R_thJC enable >40 A output in <100 mm² layout area without external heatsinks.
Industrial Motor Drive Half-Bridge	Telecom DC-DC Intermediate Bus Converter
Use Scenario: Upper switch in half-bridge configurations driving 24 V brushed DC motors in PLC I/O modules. IC Role / Device Role / Timing Role: High-side switching element handling repetitive inductive load currents up to 30 A peak. Use Value: 100 % UIS testing and 20 mJ E_AS rating ensure survival during motor stall or short-circuit events without snubber circuits.	Use Scenario: Primary switch in 48 V-to-12 V intermediate bus converters for 5G base station power shelves. IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch operating continuously at elevated ambient temperatures (70–85 °C). Use Value: –55 °C to +150 °C operating range and stable R_DS(on) vs. temperature behavior maintain regulation accuracy over full industrial temperature envelope.

VRM High-Side Switch

POL Converter Output Stage

Use Scenario: Primary high-side switch in multiphase voltage regulator modules supplying CPUs or FPGAs from 12 V bus.

IC Role / Device Role / Timing Role: Synchronous rectifier switch controlling energy transfer during PWM on-time; operates at 300–1000 kHz.

Use Value: 6.0 mΩ R_DS(on) and 13.7 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ≥1.2 % versus comparable 8 mΩ devices.

Use Scenario: Final-stage buck switch in point-of-load converters powering ASICs or memory subsystems on server motherboards.

IC Role / Device Role / Timing Role: Main power switch in compact, high-density DC-DC modules requiring minimal board area and thermal overhead.

Use Value: PowerPAK 1212-8 footprint (3.3 × 3.3 mm) and 1.9 °C/W R_thJC enable >40 A output in <100 mm² layout area without external heatsinks.

Industrial Motor Drive Half-Bridge

Telecom DC-DC Intermediate Bus Converter

Use Scenario: Upper switch in half-bridge configurations driving 24 V brushed DC motors in PLC I/O modules.

IC Role / Device Role / Timing Role: High-side switching element handling repetitive inductive load currents up to 30 A peak.

Use Value: 100 % UIS testing and 20 mJ E_AS rating ensure survival during motor stall or short-circuit events without snubber circuits.

Use Scenario: Primary switch in 48 V-to-12 V intermediate bus converters for 5G base station power shelves.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch operating continuously at elevated ambient temperatures (70–85 °C).

Use Value: –55 °C to +150 °C operating range and stable R_DS(on) vs. temperature behavior maintain regulation accuracy over full industrial temperature envelope.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR870DP-T1-GE3	30 V, 40 A, R_DS(on) = 4.5 mΩ @ 10 V, Q_g = 22.5 nC - higher current, higher gate charge.	Better suited for higher-current, lower-frequency (<300 kHz) VRMs where conduction loss dominates.	Choose SiR870DP-T1-GE3 if system prioritizes lowest R_DS(on) over gate drive strength and switching speed.
IRF7759L2TRPBF	30 V, 30 A, R_DS(on) = 7.0 mΩ @ 10 V, Q_g = 12.5 nC - slightly higher R_DS(on), lower Q_g.	Optimized for space-constrained portable applications; SO-8 package limits thermal performance.	Choose IRF7759L2TRPBF only when legacy SO-8 footprint compatibility is mandatory and power density is secondary.

Compared with SI7718DN-T1-GE3, SiR870DP-T1-GE3 offers lower conduction loss but demands stronger gate drive, while IRF7759L2TRPBF trades thermal capability for package compatibility-making SI7718DN-T1-GE3 the balanced choice for thermally demanding, medium-frequency POL designs.

Availability

SI7718DN-T1-GE3 is available at Aetrix Electronics and suitable for VRM high-side switching, POL converter output stages, and industrial motor drive half-bridges requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SI7718DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The Si7718DN product line targets high-current, high-frequency DC-DC conversion in computing, telecom, and industrial power systems, delivering optimized trade-offs between R_DS(on), gate charge, and thermal performance in compact packages.

FAQ

What is the maximum continuous drain current rating for SI7718DN-T1-GE3?

The SI7718DN-T1-GE3 is rated for 35 A continuous drain current at case temperature T_C = 25 °C, limited by package thermal capacity. At T_C = 70 °C, the rating remains 35 A; at ambient temperature T_A = 25 °C, it is derated to 18.5 A due to junction-to-ambient thermal resistance constraints. This reflects its package-limited design rather than silicon-limited capability.

Does SI7718DN-T1-GE3 support 4.5 V gate drive in practical applications?

Yes, SI7718DN-T1-GE3 is fully specified for 4.5 V gate drive: R_DS(on) = 8.2 mΩ (max) at I_D = 7 A and V_GS = 4.5 V, and its V_GS(th) range (1.2–2.5 V) provides ample margin. It is widely deployed in 5 V and 4.5 V controller-based POL converters, with verified turn-on behavior down to 3.3 V in some designs per characterization data.

What is the thermal resistance from junction to case (R_thJC) for SI7718DN-T1-GE3?

The SI7718DN-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 1.9 °C/W, with a maximum of 2.4 °C/W. This value applies to the drain pad and is measured under steady-state conditions with proper soldering to a 1-in² copper area. It enables direct thermal coupling to heatsinks or internal PCB planes for high-power density layouts.

Is SI7718DN-T1-GE3 suitable for avalanche energy handling in inductive switching?

Yes, SI7718DN-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy E_AS = 20 mJ and current I_AS = 20 A (L = 0.1 mH). This makes it suitable for applications like motor drives or relay snubbing where inductive energy must be safely absorbed without external clamping components.

What does "T1-GE3" signify in the SI7718DN-T1-GE3 part number?

In SI7718DN-T1-GE3, "T1" denotes tape-and-reel packaging (1,000 units per reel), and "GE3" indicates Vishay's green, halogen-free, lead (Pb)-free construction compliant with RoHS Directive 2011/65/EU and JEDEC JS709. The "DN" suffix identifies the PowerPAK 1212-8 package variant within the Si7718 family.

SI7718DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7718DN-T1-GE3 FAQ

1.How can I place an order for SI7718DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7718DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7718DN-T1-GE3 reliable?

The price and inventory of SI7718DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7718DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7718DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7718DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7718DN-T1-GE3?

SI7718DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7718DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7718DN-T1-GE3?

For technical support, including SI7718DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7718DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7718DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7718DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7718DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7718DN-T1-GE3?

All SI7718DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7718DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7718DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7718DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …