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Vishay Siliconix SI7720DN-T1-GE3
- Part No.:
- SI7720DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7720DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 12A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,938
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Product details
Overview
SI7720DN-T1-GE3 from Vishay Siliconix is an N-channel 30-V trench MOSFET with integrated Schottky diode in a PowerPAK® 1212-8 package, delivering RDS(on) = 12.5 mΩ at VGS = 10 V and 15 mΩ at VGS = 4.5 V, rated for 12 A continuous drain current and optimized for synchronous rectification in buck converters.
For engineers reviewing the SI7720DN-T1-GE3 datasheet, SI7720DN-T1-GE3 pinout, SI7720DN-T1-GE3 application, or SI7720DN-T1-GE3 equivalent, this device offers verified 100 % UIS and Rg testing, low 1.07 mm profile, and halogen-free/lead-free compliance per JEDEC J-STD-020D reflow standards.
Technical Context
This monolithic SkyFET™ integrates a TrenchFET® power MOSFET and Schottky diode on a single die, enabling reduced forward voltage (VSD = 0.53–0.7 V at IS = 2 A) and fast reverse recovery (trr = 17–30 ns). Its PowerPAK 1212-8 package features exposed drain pads on both top and bottom for ultra-low RthJC = 1.9 °C/W (typical).
The device supports gate drive voltages from 4.5 V to 10 V, exhibits Qg = 13.7 nC (typ.) at VGS = 4.5 V, and maintains stable RDS(on) across -50 °C to 150 °C junction temperature range, with normalized on-resistance variation ≤1.6× over that range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24-V input rails and 5-V logic-level gate drive. |
| RDS(on) | 12.5 mΩ @ VGS = 10 V - Enables <1.25 W conduction loss at 10 A, critical for high-efficiency synchronous rectifiers. |
| ID (continuous) | 12 A @ TC = 25 °C - Package-limited current rating suitable for notebook system power stages up to ~60 W. |
| Qg | 13.7 nC @ VGS = 4.5 V - Low gate charge reduces switching losses and eases drive requirements from standard PWM controllers. |
| VSD | 0.53–0.7 V @ IS = 2 A - Integrated Schottky diode lowers body-diode conduction loss versus discrete solutions. |
| trr | 17–30 ns - Fast reverse recovery minimizes shoot-through risk and improves efficiency in hard-switched buck topologies. |
| RthJC | 1.9 °C/W (typ.) - Enables direct thermal coupling to PCB copper, supporting >50 W dissipation with minimal heatsinking. |
Pinout & Package
PowerPAK® 1212-8 is a leadless surface-mount package with 8 terminals, 4 drain (D) pins on top and bottom, 3 source (S) pins, and 1 gate (G) pin. The exposed drain pad provides primary thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Top-side D) | Drain connection | Four parallel drain terminals reduce current density and improve thermal spreading into PCB copper. |
| 5 (G) | Gate input | Single gate terminal with Rg = 0.3–2.4 Ω - enables precise gate timing control without external gate resistor. |
| 6, 7, 8 (S) | Source return | Three-source configuration lowers source inductance and improves stability in high-dI/dt synchronous rectifier operation. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic SkyFET™ integration | Co-located MOSFET + Schottky diode eliminates interconnect parasitics, reducing trr and VSD vs. discrete pairs. |
| PowerPAK 1212-8 package | 1.07 mm height and 3.3 × 3.3 mm footprint - fits space-constrained notebook PC VRMs while delivering SO-8–class thermal performance. |
| 100 % Rg tested | Guaranteed gate resistance between 0.3–2.4 Ω - ensures consistent switching speed and EMI behavior across production lots. |
| 100 % UIS tested | Validated avalanche energy rating of 20 mJ - supports robust operation during transient overvoltage events in buck converter outputs. |
| Halogen-free & Pb-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020D - qualified for lead-free reflow up to 260 °C peak. |
Applications
| High-Efficiency Notebook DC-DC Converter | Synchronous Buck Regulator for CPU Core Voltage |
|---|---|
|
Use Scenario: Primary synchronous rectifier switch in 19-V input to 1.2-V/10-A output buck converter powering Intel Core i5/i7 processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–500 kHz, replacing freewheeling diode to eliminate 0.4–0.7 V forward drop. Use Value: Reduces conduction loss by >75 % versus Schottky diode, enabling >92 % efficiency at full load and lowering thermal stress on motherboard layers. |
Use Scenario: Secondary-side switch in multiphase VRM supplying dynamic core voltage to mobile APUs with rapid load transients. IC Role / Device Role / Timing Role: High-current, low-RDS(on) N-channel MOSFET used in paralleled phases with tight gate timing control. Use Value: 12.5 mΩ RDS(on) at 10 V gate drive minimizes I²R loss during 12-A steady-state operation, maintaining <45 °C case temperature. |
| USB-C PD Power Delivery Module | Industrial 24-V Input Buck Converter |
|
Use Scenario: Output synchronous rectifier in 20-V/5-A USB-C PD sink circuit handling variable input from 9–20 V. IC Role / Device Role / Timing Role: Logic-level (4.5 V) driven MOSFET with integrated Schottky, enabling efficient operation across full input range. Use Value: 15 mΩ RDS(on) @ 4.5 V ensures <0.75 W loss at 5 A, while VSD = 0.53 V limits reverse conduction loss during dead-time. |
Use Scenario: Main power switch in DIN-rail mounted 24-V to 5-V/3-A industrial buck supply for PLC I/O modules. IC Role / Device Role / Timing Role: Robust, thermally efficient MOSFET selected for continuous 12-A capability and 150 °C max junction rating. Use Value: RthJC = 1.9 °C/W allows direct mounting to metal-core PCB, eliminating need for external heatsink in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7862DP-T1-GE3 | 30 V, RDS(on) = 10.5 mΩ @ 10 V, Qg = 15.2 nC, same PowerPAK 1212-8 package | Lower RDS(on) but higher Qg; better for high-current, low-frequency apps; less optimal for high-frequency sync rectification | Select when <10 mΩ conduction loss is prioritized over gate drive strength and switching speed. |
| IRF7759L2TRPBF | 30 V, RDS(on) = 11.5 mΩ @ 10 V, Qg = 12.5 nC, PowerSO-8 package (4.9 × 6.0 mm), no integrated Schottky | Larger footprint, higher RthJA (40 °C/W), requires external Schottky for synchronous rectification | Choose only if board layout accommodates larger package and discrete diode placement is acceptable. |
Compared with SI7720DN-T1-GE3, Si7862DP-T1-GE3 offers lower conduction loss but demands more gate drive energy, while IRF7759L2TRPBF lacks monolithic integration and increases layout complexity-making SI7720DN-T1-GE3 optimal for compact, high-efficiency synchronous buck designs where size and integrated diode performance are critical.
Availability
SI7720DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC system power, synchronous buck converters, and industrial 24-V DC-DC applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SI7720DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7720DN-T1-GE3 belongs to Vishay's SkyFET™ monolithic trench MOSFET family, engineered specifically for high-density, high-efficiency synchronous rectification in portable and industrial DC-DC conversion.
FAQ
What is the maximum continuous drain current rating for SI7720DN-T1-GE3 at 70 °C case temperature?
The SI7720DN-T1-GE3 is rated for 12 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and applies under steady-state conditions with proper PCB copper thermal management per Vishay Application Note AN822.
Does SI7720DN-T1-GE3 require a gate driver IC for operation in a 500-kHz buck converter?
SI7720DN-T1-GE3 can be driven directly by most PWM controllers with ≥10-mA peak gate drive capability due to its low Qg of 13.7 nC (typ.) at 4.5 V. At 500 kHz, average gate drive power is <7 mW - well within capability of standard controller outputs, eliminating need for external gate drivers in most designs.
Is the Schottky diode in SI7720DN-T1-GE3 electrically isolated from the MOSFET source terminal?
No - the Schottky diode in SI7720DN-T1-GE3 is monolithically integrated with common cathode connected to the MOSFET source and anode tied to the drain. This configuration enables true synchronous rectifier operation with matched thermal and electrical characteristics between switch and diode paths.
What is the recommended minimum solder pad layout for SI7720DN-T1-GE3 on FR-4 PCB?
Vishay recommends the PowerPAK 1212-8 single pad pattern from Application Note 72597: 3.86 mm × 2.235 mm drain pad with 0.99 mm source/gate extensions. Extending the drain copper beyond 0.3–0.5 in² yields diminishing thermal returns; solid internal ground/power planes are strongly advised for optimal RthJA.
Can SI7720DN-T1-GE3 be used in linear regulator applications?
SI7720DN-T1-GE3 is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) graph shows DC limitation only up to ~1.5 A at 30 V, and thermal design assumes switching duty cycles. For linear regulation, dedicated LDOs or purpose-built pass transistors are recommended instead.
SI7720DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1790 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7720DN-T1-GE3 FAQ
1.How can I place an order for SI7720DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7720DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7720DN-T1-GE3 reliable?
The price and inventory of SI7720DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7720DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7720DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7720DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7720DN-T1-GE3?
SI7720DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7720DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7720DN-T1-GE3?
For technical support, including SI7720DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7720DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7720DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7720DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7720DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7720DN-T1-GE3?
All SI7720DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7720DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7720DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7720DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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