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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7738DP-T1-E3

Name: SI7738DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7738DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7738DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7738DP-T1-E3.pdf

Description:: MOSFET N-CH 150V 30A PPAK SO-8

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Product details

Overview

SI7738DP-T1-E3 from Vishay Siliconix is a N-channel 150-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering 30 A continuous drain current at T_C = 25 °C, 0.038 Ω R_DS(on) at V_GS = 10 V, and 35 nC total gate charge - optimized for primary-side switching in high-efficiency AC-DC power supplies.

For engineers reviewing the SI7738DP-T1-E3 datasheet, SI7738DP-T1-E3 pinout, SI7738DP-T1-E3 application, or SI7738DP-T1-E3 equivalent, key selection criteria include its 150-V V_DS, 1.0 °C/W junction-to-case thermal resistance, 100% UIS tested ruggedness, lead-free (Pb-free) construction, and compatibility with standard SO-8 PCB footprints.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching performance. Its 150-V breakdown voltage supports operation in universal-input offline SMPS topologies, while the 35 nC gate charge enables efficient drive with standard PWM controllers.

The device integrates a robust body diode with 0.8–1.2 V forward voltage at 6.2 A and 75–115 ns reverse recovery time, supporting synchronous rectification and flyback snubberless designs. Thermal design leverages the exposed-drain PowerPAK® SO-8 footprint, offering DPAK-equivalent R_thJC (1.0 °C/W) in an SO-8-compatible form factor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports universal AC input (85–265 VAC) with sufficient margin for voltage spikes in flyback/LLC primary switches
R_DS(on)	0.038 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 17.5 A RMS in 100-W adapters
I_D (continuous)	30 A @ T_C = 25 °C - package-limited current rating suitable for high-current primary-side switching
Q_g	35 nC (typ.) - allows clean turn-on/turn-off with ≤1 Ω gate driver impedance without excessive switching loss
R_thJC	1.0 °C/W (max) - enables direct thermal coupling to heatsink or copper pour, matching DPAK-level thermal performance
E_AS	45 mJ - withstands single-pulse avalanche energy during inductive turn-off transients in hard-switched converters
V_GS(th)	2–4 V - ensures reliable enhancement-mode operation with standard 5-V or 10-V gate drivers

Pinout & Package

PowerPAK® SO-8 (leadless, SO-8 footprint), 6.15 mm × 5.15 mm × 1.04 mm, with exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (bottom view)	Drain (D), Source (S), Gate (G)	Pins 1–4 and 6–8 are drain terminals (common); Pin 5 is gate; Pins 2–3 are source - matches standard SO-8 pinout for drop-in replacement on existing layouts

Key Features

Feature	Design Value
TrenchFET® technology	Enables 0.038 Ω R_DS(on) at 150 V, reducing conduction losses vs. planar MOSFETs of same voltage class
100 % UIS tested	Guarantees avalanche ruggedness for reliable operation under unclamped inductive switching stress
PowerPAK® SO-8 package	Delivers DPAK-level thermal resistance (1.0 °C/W) in SO-8 footprint - no PCB redesign needed
Halogen-free construction	Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment
Lead (Pb)-free termination	Meets JEDEC J-STD-020 reflow profile for Pb-free soldering (peak 255 °C, 30 s)

Applications

Server PSU Primary Switch	Industrial AC-DC Adapter
Use Scenario: High-density 80 PLUS Titanium server power supply operating at 100 kHz with active clamp flyback topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 30 A peak drain current and 150-V blocking duty. Use Value: 0.038 Ω R_DS(on) minimizes conduction loss at full load; 1.0 °C/W R_thJC maintains T_J < 125 °C with minimal heatsinking.	Use Scenario: 200-W industrial AC-DC adapter with wide input range (85–305 VAC) and 150-V primary switch requirement. IC Role / Device Role / Timing Role: Main switching FET in discontinuous conduction mode (DCM) flyback converter. Use Value: 100% UIS rating ensures reliability during line surges; 35 nC Q_g enables clean switching with low-cost gate drivers.
Telecom Rectifier Module	LED Driver Primary Switch
Use Scenario: -48 V telecom rectifier using LLC resonant converter with 150-V primary-side MOSFET. IC Role / Device Role / Timing Role: Half-bridge upper switch subjected to high dv/dt and repetitive avalanche stress. Use Value: 45 mJ E_AS withstands repeated line transients; trench structure reduces gate charge-induced switching loss at 300–500 kHz.	Use Scenario: High-bay LED driver with universal AC input and integrated PFC + flyback architecture. IC Role / Device Role / Timing Role: Primary switch in boost PFC stage requiring 150-V rating and low R_DS(on). Use Value: 30 A continuous current supports >150 W PFC output; halogen-free construction meets IEC 62471 photobiological safety compliance.

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-density 80 PLUS Titanium server power supply operating at 100 kHz with active clamp flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 30 A peak drain current and 150-V blocking duty.

Use Value: 0.038 Ω R_DS(on) minimizes conduction loss at full load; 1.0 °C/W R_thJC maintains T_J < 125 °C with minimal heatsinking.

Use Scenario: 200-W industrial AC-DC adapter with wide input range (85–305 VAC) and 150-V primary switch requirement.

IC Role / Device Role / Timing Role: Main switching FET in discontinuous conduction mode (DCM) flyback converter.

Use Value: 100% UIS rating ensures reliability during line surges; 35 nC Q_g enables clean switching with low-cost gate drivers.

Telecom Rectifier Module

LED Driver Primary Switch

Use Scenario: -48 V telecom rectifier using LLC resonant converter with 150-V primary-side MOSFET.

IC Role / Device Role / Timing Role: Half-bridge upper switch subjected to high dv/dt and repetitive avalanche stress.

Use Value: 45 mJ E_AS withstands repeated line transients; trench structure reduces gate charge-induced switching loss at 300–500 kHz.

Use Scenario: High-bay LED driver with universal AC input and integrated PFC + flyback architecture.

IC Role / Device Role / Timing Role: Primary switch in boost PFC stage requiring 150-V rating and low R_DS(on).

Use Value: 30 A continuous current supports >150 W PFC output; halogen-free construction meets IEC 62471 photobiological safety compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7446DP-T1-E3	Lower V_DS (100 V), lower R_DS(on) (0.018 Ω), same PowerPAK® SO-8 package	Not rated for 150-V primary-side use; limited to secondary-side or low-line applications	Select only if system max V_DS < 100 V and lower on-resistance is prioritized over voltage margin
IRF6642TRPBF	150-V rating, 0.035 Ω R_DS(on), 33 nC Q_g, PQFN 5×6 mm package (non-SO-8 footprint)	Requires PCB layout change; higher thermal resistance (1.5 °C/W) than SI7738DP-T1-E3	Choose when board space allows PQFN and marginal thermal improvement justifies redesign

Compared with Si7446DP-T1-E3, SI7738DP-T1-E3 provides essential 150-V rating for primary-side isolation barriers; compared with IRF6642TRPBF, it delivers superior thermal performance and SO-8 drop-in compatibility without layout revision.

Availability

SI7738DP-T1-E3 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, telecom rectifiers, and LED driver primary-side switching requiring stable component supply and long-term production continuity.

Supply support for SI7738DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The Si7738DP product line targets high-reliability primary-side switching in offline power conversion, engineered to replace DPAK and TO-220 devices with SO-8 footprint compatibility and enhanced thermal performance.

FAQ

What is the maximum continuous drain current rating for SI7738DP-T1-E3 at 70 °C case temperature?

The SI7738DP-T1-E3 supports 26 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area, ambient temperature, and airflow. The SI7738DP-T1-E3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" conditions.

Does SI7738DP-T1-E3 support gate drive voltages below 10 V?

Yes, SI7738DP-T1-E3 is fully characterized down to V_GS = 4 V, with R_DS(on) increasing to 0.055 Ω at that level. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, enabling reliable turn-on with 5-V logic-level drivers. However, for minimum conduction loss, 10-V drive is recommended - the SI7738DP-T1-E3 achieves its specified 0.038 Ω R_DS(on) only at V_GS = 10 V.

Is SI7738DP-T1-E3 compatible with standard SO-8 PCB footprints?

Yes, SI7738DP-T1-E3 uses the PowerPAK® SO-8 package, which maintains identical pin count, pin pitch (1.27 mm), and outer dimensions (6.15 mm × 5.15 mm) as the standard SO-8. Vishay explicitly states it can be mounted directly onto existing SO-8 land patterns - the SI7738DP-T1-E3 replaces legacy SO-8 MOSFETs without layout changes, though optimal thermal performance requires extended drain copper.

What is the body diode reverse recovery charge (Q_rr) of SI7738DP-T1-E3?

The SI7738DP-T1-E3 has a body diode reverse recovery charge (Q_rr) of 245–370 nC, measured at I_F = 6.2 A, dI/dt = 100 A/µs, and T_J = 25 °C. This parameter is critical for synchronous rectification and zero-voltage switching (ZVS) design; the SI7738DP-T1-E3's Q_rr supports moderate-frequency flyback and LLC topologies where body diode conduction occurs during dead-time intervals.

How does the thermal performance of SI7738DP-T1-E3 compare to standard SO-8 MOSFETs?

The SI7738DP-T1-E3 achieves 1.0 °C/W maximum junction-to-case thermal resistance - matching DPAK performance and improving ~15× over standard SO-8 packages (~16 °C/W). This is enabled by its exposed-drain PowerPAK® construction. In a 105 °C board environment dissipating 2.7 W, the SI7738DP-T1-E3 junction temperature rises only ~2 °C versus ~43 °C for a standard SO-8, directly preserving R_DS(on) and reliability - confirmed in Vishay Application Note AN821 for SI7738DP-T1-E3.

SI7738DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 7.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7738DP-T1-E3 FAQ

1.How can I place an order for SI7738DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7738DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7738DP-T1-E3 reliable?

The price and inventory of SI7738DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7738DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7738DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7738DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7738DP-T1-E3?

SI7738DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7738DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7738DP-T1-E3?

For technical support, including SI7738DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7738DP-T1-E3 requirements.

6.How does Aetrix verify that SI7738DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7738DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7738DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7738DP-T1-E3?

All SI7738DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7738DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7738DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7738DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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