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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7748DP-T1-GE3

Name: SI7748DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7748DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7748DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7748DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 50A PPAK SO-8

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Product details

Overview

SI7748DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET monolithically integrated with a Schottky diode in a PowerPAK® SO-8 package. It delivers R_DS(on) = 4.8 mΩ at V_GS = 10 V, 50 A continuous drain current (T_J = 150 °C), and 27.8 nC total gate charge - optimized for notebook V_core low-side synchronous rectification.

For engineers reviewing the SI7748DP-T1-GE3 datasheet, SI7748DP-T1-GE3 pinout, SI7748DP-T1-GE3 application, or SI7748DP-T1-GE3 equivalent, key selection criteria include its integrated Schottky body diode (V_SD = 0.42 V @ 2 A), ultra-low R_DS(on) stability over temperature, and PowerPAK SO-8 footprint compatibility with standard SO-8 land patterns for drop-in thermal upgrade paths.

Technical Context

This device implements a SkyFET™ monolithic architecture combining a trench-gate N-channel MOSFET and a co-packaged Schottky diode on a single die, enabling synchronous buck converter low-side switching with reduced reverse recovery loss and lower conduction loss than discrete MOSFET+diode solutions. Its gate threshold voltage (1.3–2.7 V) supports 4.5 V and 10 V drive logic.

The PowerPAK SO-8 package features an exposed copper drain pad on the bottom surface, delivering R_thJC = 1.7 °C/W (typ.) and R_thJA = 21 °C/W (t ≤ 10 s), matching DPAK thermal performance while retaining SO-8 footprint compatibility. The monolithic integration eliminates parasitic inductance between MOSFET and diode, improving EMI and efficiency in high-frequency (>300 kHz) V_core regulators.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 12 V input/3.3 V output notebook VRMs.
R_DS(on)	4.8 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 50 A, critical for high-current V_core phases.
I_D (continuous)	50 A @ T_C = 25 °C - Sustains full-phase current without derating when mounted on ≥1"×1" FR4 with adequate copper pour.
Q_g	27.8 nC @ V_GS = 4.5 V - Low gate charge enables efficient 4.5 V gate drive with minimal driver loss in mobile VRMs.
V_SD	0.42 V @ I_S = 2 A - Schottky forward voltage reduces body diode conduction loss during dead-time in synchronous rectification.
t_rr	25 ns @ I_F = 10 A - Fast reverse recovery minimizes switching loss and voltage overshoot during freewheeling transitions.
R_thJC	1.7 °C/W (typ.) - Enables direct thermal coupling to PCB ground plane; supports >50 W dissipation with modest heatsinking.

Pinout & Package

SI7748DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 Single package (5.15 mm × 6.15 mm × 1.04 mm), featuring an exposed copper drain pad on the bottom surface for enhanced thermal transfer. The top-side pinout matches standard SO-8 footprints, allowing direct replacement on existing layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for MOSFET channel and Schottky cathode; tied to power ground plane.
5	Gate (G)	Control terminal for MOSFET channel; requires <2 Ω gate resistance to limit ringing in high-dI/dt applications.
6, 7, 8	Drain (D)	High-current drain node shared by MOSFET and Schottky anode; connected to exposed bottom copper pad for thermal and electrical path.

Key Features

Feature	Design Value
SkyFET™ monolithic integration	Eliminates interconnect inductance between MOSFET and Schottky diode, reducing voltage spikes and EMI in synchronous buck converters.
100 % R_g and UIS tested	Guarantees gate robustness against transient overvoltage and avalanche energy handling (E_AS = 45 mJ) in real-world load dump conditions.
PowerPAK SO-8 thermal performance	Delivers DPAK-equivalent R_thJC (1.7 °C/W) in SO-8 footprint, enabling >30 % higher power density vs. standard SO-8 MOSFETs.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally compliant notebook manufacturing.
Low Q_gd/Q_g ratio	Q_gd = 7.3 nC / Q_g = 27.8 nC → 26 % - Improves hard-switching immunity and reduces Miller-induced turn-on risk in high-side configurations.

Applications

Server VRM Low-Side Switch	Notebook V_core Phase
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in 1U rack servers with strict thermal envelope limits. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–600 kHz switching frequency with 4.5 V gate drive. Use Value: 4.8 mΩ R_DS(on) and 0.42 V Schottky V_SD reduce conduction loss by 35 % vs. discrete MOSFET+Schottky solutions, lowering junction temperature by up to 22 °C.	Use Scenario: Dual-phase V_core regulator in ultrabook platforms requiring compact layout and battery-life optimization. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage, conducting during freewheeling interval with fast body diode recovery. Use Value: 25 ns t_rr and monolithic integration minimize dead-time loss and improve light-load efficiency by 2.1 % at 1 A output.
GPU Power Delivery	Industrial DC-DC Module
Use Scenario: Compact 12 V input to 0.8–1.2 V output converter for discrete GPU power rails in embedded vision systems. IC Role / Device Role / Timing Role: Low-side power switch handling peak currents up to 45 A with tight thermal constraints on 2-layer PCBs. Use Value: PowerPAK SO-8's 1.7 °C/W R_thJC allows sustained 45 A operation with <10 °C ΔT above board temperature, avoiding forced air cooling.	Use Scenario: Isolated 48 V to 12 V intermediate bus converter in factory automation controllers with long service life requirements. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology operating at 200 kHz. Use Value: 100 % UIS testing ensures reliability under repetitive avalanche stress during output short-circuit events, extending field lifetime beyond 10 years.

Server VRM Low-Side Switch

Notebook V_core Phase

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in 1U rack servers with strict thermal envelope limits.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–600 kHz switching frequency with 4.5 V gate drive.

Use Value: 4.8 mΩ R_DS(on) and 0.42 V Schottky V_SD reduce conduction loss by 35 % vs. discrete MOSFET+Schottky solutions, lowering junction temperature by up to 22 °C.

Use Scenario: Dual-phase V_core regulator in ultrabook platforms requiring compact layout and battery-life optimization.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage, conducting during freewheeling interval with fast body diode recovery.

Use Value: 25 ns t_rr and monolithic integration minimize dead-time loss and improve light-load efficiency by 2.1 % at 1 A output.

GPU Power Delivery

Industrial DC-DC Module

Use Scenario: Compact 12 V input to 0.8–1.2 V output converter for discrete GPU power rails in embedded vision systems.

IC Role / Device Role / Timing Role: Low-side power switch handling peak currents up to 45 A with tight thermal constraints on 2-layer PCBs.

Use Value: PowerPAK SO-8's 1.7 °C/W R_thJC allows sustained 45 A operation with <10 °C ΔT above board temperature, avoiding forced air cooling.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in factory automation controllers with long service life requirements.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology operating at 200 kHz.

Use Value: 100 % UIS testing ensures reliability under repetitive avalanche stress during output short-circuit events, extending field lifetime beyond 10 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky-diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V; higher Q_g = 44 nC; same PowerPAK SO-8 package.	Better conduction loss but higher switching loss at >500 kHz; requires stronger gate driver.	Prefer SI7748DP-T1-GE3 for 4.5 V drive and balanced efficiency across 200–600 kHz; choose SiR872DP-T1-GE3 only if <3 mΩ R_DS(on) is mandatory and gate drive capability permits.
IRF6642TRPBF	SO-8 package; R_DS(on) = 5.2 mΩ @ 10 V; no integrated Schottky; higher R_thJA = 50 °C/W.	Lacks monolithic Schottky, requiring external diode and increasing layout area and EMI risk.	SI7748DP-T1-GE3 provides superior thermal performance and integrated body diode functionality - avoid IRF6642TRPBF unless legacy SO-8 compatibility without thermal upgrade is required.

Compared with SiR872DP-T1-GE3, SI7748DP-T1-GE3 offers lower gate charge for 4.5 V drive compatibility and better thermal margin at identical current levels; versus IRF6642TRPBF, it delivers 28 % lower R_DS(on), integrated Schottky functionality, and 58 % lower R_thJA, making it the optimal choice for thermally constrained, high-efficiency synchronous rectification.

Availability

SI7748DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook V_core power delivery, server VRM low-side switching, and industrial DC-DC modules requiring stable component supply, RoHS-compliant packaging, and proven monolithic Schottky-MOSFET integration.

Supply support for SI7748DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally optimized packaging.

The SI7748DP-T1-GE3 belongs to Vishay's SkyFET™ PowerPAK SO-8 family, engineered specifically for high-current, high-frequency synchronous rectification in space-constrained computing and industrial power supplies where thermal performance and integration are critical.

FAQ

What is the maximum continuous drain current rating for SI7748DP-T1-GE3 at 70 °C case temperature?

The SI7748DP-T1-GE3 supports 50 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB copper pour and thermal vias beneath the exposed drain pad to maintain junction temperature ≤150 °C. Derating is not required within this condition, distinguishing it from ambient-limited ratings like the 18.6 A value at T_A = 70 °C.

Does SI7748DP-T1-GE3 require a gate resistor for stable operation in a 500 kHz synchronous buck converter?

Yes, SI7748DP-T1-GE3 benefits from a 1–2 Ω gate resistor in series with the driver output to dampen ringing caused by gate-drain capacitance (C_rss = 215 pF) and PCB trace inductance. The datasheet confirms stable switching with R_g = 1 Ω in its dynamic test conditions, and omitting this resistor risks shoot-through or oscillation due to the device's low R_g (0.2–2 Ω typical).

Can SI7748DP-T1-GE3 be used as a direct replacement for standard SO-8 MOSFETs without PCB layout changes?

Yes, SI7748DP-T1-GE3 uses the exact same footprint and pinout as standard SO-8 packages, enabling drop-in replacement on existing land patterns. However, to fully exploit its thermal advantage, the PCB drain pad should match the recommended PowerPAK SO-8 pattern (e.g., 0.260" × 0.174") with thermal vias - though even with standard SO-8 pads, it delivers ≥10 °C/W lower R_thJA than conventional SO-8 devices.

What is the body diode forward voltage of SI7748DP-T1-GE3 and how does it compare to discrete Schottky diodes?

The SI7748DP-T1-GE3 body diode exhibits V_SD = 0.42 V at I_S = 2 A and 25 °C, confirmed in its datasheet's Drain-Source Body Diode Characteristics table. This is comparable to 45 V rated discrete Schottky diodes (e.g., SS34: 0.45 V @ 3 A), but with zero interconnect inductance due to monolithic integration - resulting in faster recovery (t_rr = 25 ns) and lower EMI than discrete solutions.

Is SI7748DP-T1-GE3 suitable for automotive applications requiring AEC-Q101 qualification?

No, SI7748DP-T1-GE3 is not AEC-Q101 qualified. It is designed and tested for commercial and industrial computing applications (e.g., notebooks, servers), with operating temperature range –55 °C to +150 °C but without the extended reliability testing, failure analysis, and traceability required for automotive use. For AEC-Q101-compliant alternatives, consult Vishay's Automotive PowerPAK portfolio such as SQJQ480E.

SI7748DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: SkyFET®, TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 56W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7748DP-T1-GE3 FAQ

1.How can I place an order for SI7748DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7748DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7748DP-T1-GE3 reliable?

The price and inventory of SI7748DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7748DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7748DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7748DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7748DP-T1-GE3?

SI7748DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7748DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7748DP-T1-GE3?

For technical support, including SI7748DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7748DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7748DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7748DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7748DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7748DP-T1-GE3?

All SI7748DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7748DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7748DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7748DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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