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Vishay Siliconix SI7758DP-T1-GE3
- Part No.:
- SI7758DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7758DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,531
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Product details
Overview
SI7758DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V PowerPAK® SO-8 MOSFET with integrated Schottky diode, delivering RDS(on) = 2.9 mΩ at VGS = 10 V and 3.8 mΩ at VGS = 4.5 V, rated for 60 A continuous drain current (TC = 25 °C), and optimized for synchronous rectification in notebook CPU core power stages.
For engineers reviewing the SI7758DP-T1-GE3 datasheet, SI7758DP-T1-GE3 pinout, SI7758DP-T1-GE3 application, or SI7758DP-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET™ TrenchFET® Gen III construction, 100 % avalanche-tested reliability, junction-to-case thermal resistance of 0.9 °C/W, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.
Technical Context
This device integrates a high-current N-channel MOSFET and a co-packaged Schottky diode in a single PowerPAK® SO-8 leadless package, enabling efficient synchronous rectification without external diode placement. Its gate threshold voltage (1.3–2.7 V) supports direct drive from 3.3 V or 5 V controllers, and its low Qg (46 nC at VGS = 4.5 V) minimizes switching losses in high-frequency buck converters.
The monolithic SkyFET™ architecture ensures matched thermal and electrical characteristics between MOSFET and diode, critical for stable body-diode conduction during dead-time intervals. Its RthJC = 0.9 °C/W and RthJA = 15 °C/W (t ≤ 10 s) enable high-power density designs on compact FR4 boards without forced airflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and 12 V intermediate bus architectures. |
| RDS(on) @ VGS = 10 V | 2.9 mΩ - Enables <1.2 W conduction loss at 20 A, supporting high-efficiency CPU core VRMs. |
| RDS(on) @ VGS = 4.5 V | 3.8 mΩ - Ensures robust operation with 5 V gate drivers and maintains low loss in 3.3 V logic-controlled stages. |
| ID (continuous, TC = 25 °C) | 60 A - Package-limited current rating suitable for multi-phase 60 A+ CPU power delivery. |
| Qg @ VGS = 4.5 V | 46 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in compact buck converters. |
| VSD @ IS = 3 A | 0.43–0.55 V - Low forward voltage Schottky diode minimizes reverse-recovery losses and improves light-load efficiency. |
| RthJC | 0.9 °C/W - Direct die-to-PCB thermal path allows high-power dissipation with minimal heatsinking on 4-layer boards. |
Pinout & Package
SI7758DP-T1-GE3 uses the PowerPAK® SO-8 leadless package (6.15 mm × 5.15 mm), identical in footprint and pinout to standard SO-8 but with exposed copper drain pads on the bottom for enhanced thermal conduction. The package is RoHS-compliant, halogen-free, and qualified for reflow up to 260 °C peak.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to internal die and bottom-side thermal pad - primary heat path to PCB copper. |
| 5 | Source (S) | Common source node for MOSFET channel and Schottky anode - referenced to power ground in synchronous buck low-side position. |
| 6 | Gate (G) | Control terminal for MOSFET channel - requires <1 Ω series resistance to damp ringing due to low Rg (0.2–1.0 Ω). |
| 7, 8 | Source (S) | Additional source terminals reinforcing low-inductance return path - critical for minimizing shoot-through risk in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET™ Monolithic Integration | Co-packaged MOSFET + Schottky diode ensures matched thermal drift and eliminates layout-induced timing skew in synchronous rectifiers. |
| 100 % Avalanche Tested | Guarantees ruggedness against inductive switching transients up to 50 A single-pulse avalanche current (EAS = 125 mJ). |
| PowerPAK® SO-8 Footprint Compatibility | Direct drop-in replacement for standard SO-8 MOSFETs without PCB redesign - same land pattern, same pick-and-place tooling. |
| Low RthJC = 0.9 °C/W | Enables >60 W power dissipation with <10 °C junction-to-case rise on 2 oz copper, eliminating need for external heatsinks in most VRM designs. |
| Halogen-Free & RoHS-Compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - suitable for consumer notebook and industrial computing applications requiring green compliance. |
Applications
| High-Efficiency Notebook CPU Core VRM | Buck Converter Primary Switch |
|---|---|
|
Use Scenario: High-current, multi-phase voltage regulator supplying Intel/AMD CPU cores with dynamic load steps up to 300 A/µs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating in continuous conduction mode (CCM) at 300–1000 kHz. Use Value: 2.9 mΩ RDS(on) and 0.43 V VSD reduce total conduction loss by ≥18 % vs. discrete MOSFET + Schottky solutions, improving full-load efficiency to >94 %. |
Use Scenario: 12 V input to 1.2 V output buck converter in server motherboard power delivery network. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch handling 60 A DC output with tight thermal constraints. Use Value: 0.9 °C/W RthJC allows stable 60 A operation at TC = 70 °C without derating, enabling smaller board area vs. DPAK alternatives. |
| Synchronous Rectification Switch | DC-DC Point-of-Load Converter |
|
Use Scenario: Secondary-side rectification in isolated 48 V–12 V intermediate bus converters for telecom equipment. IC Role / Device Role / Timing Role: Synchronous rectifier replacing flyback diode in forward or LLC topologies, driven by transformer-coupled gate signal. Use Value: Integrated Schottky diode eliminates reverse recovery charge (Qrr = 27–45 nC), reducing EMI and improving light-load efficiency by 3–5 % over discrete solutions. |
Use Scenario: Compact 5 V to 3.3 V point-of-load regulator on FPGA or ASIC carrier boards with strict height limits. IC Role / Device Role / Timing Role: Low-profile, high-current power switch in space-constrained 2-layer PCB layouts. Use Value: PowerPAK® SO-8 height <1.12 mm enables stacking under connectors or memory modules - 30 % lower profile than DPAK equivalents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | Higher VDS = 40 V; RDS(on) = 3.2 mΩ @ 10 V; Qg = 52 nC - trade-off of voltage margin for slightly higher conduction loss. | Better suited for 36 V input industrial supplies; less optimal for 24 V notebook rails due to unnecessary voltage overhead. | Select when system input may exceed 30 V transiently or long-term reliability under 40 V stress is required. |
| IRF6722MTRPBF | Same VDS = 30 V; RDS(on) = 3.1 mΩ @ 10 V; no integrated Schottky; TO-252 (DPAK) package - lacks monolithic diode and has higher RthJC = 1.6 °C/W. | Requires external Schottky for synchronous rectification; needs larger PCB area and additional thermal management. | Choose only if existing DPAK layout prevents SO-8 footprint adoption or if discrete diode control is preferred for timing tuning. |
Compared with SiR872DP-T1-GE3 and IRF6722MTRPBF, SI7758DP-T1-GE3 uniquely combines 30 V rating, sub-3 mΩ RDS(on), monolithic Schottky integration, and PowerPAK® SO-8's DPAK-equivalent thermal performance in a standard SO-8 footprint - making it the optimal choice for space- and efficiency-constrained notebook and server VRMs.
Availability
SI7758DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, high-density buck converters, and synchronous rectification switches requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for SI7758DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and green manufacturing.
SI7758DP-T1-GE3 belongs to Vishay's SkyFET™ PowerPAK® SO-8 product line, engineered specifically for high-current, high-frequency synchronous rectification in portable computing and server power delivery systems where thermal density and efficiency are critical.
FAQ
What is the maximum continuous drain current rating for SI7758DP-T1-GE3 at TC = 70 °C?
The SI7758DP-T1-GE3 is rated for 60 A continuous drain current at TC = 25 °C and maintains 60 A at TC = 70 °C per the Absolute Maximum Ratings table - this reflects package-limited current capacity independent of junction temperature derating, enabled by its low RthJC = 0.9 °C/W and robust PowerPAK® construction.
Does SI7758DP-T1-GE3 require a heatsink in typical notebook VRM applications?
No, SI7758DP-T1-GE3 does not require an external heatsink in standard notebook VRM applications. Its PowerPAK® SO-8 package delivers RthJC = 0.9 °C/W, allowing full 60 A operation with <10 °C junction-to-case temperature rise on 2 oz copper PCBs - thermal management is achieved via PCB copper area, not added heatsinks.
Is SI7758DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SI7758DP-T1-GE3 is fully pin-compatible with standard SO-8 packages: pin 1–4 are drains, pin 5 is source, pin 6 is gate, and pins 7–8 are additional source terminals. Its footprint matches JEDEC MS-012, enabling direct substitution without PCB layout changes - confirmed in Vishay Application Note AN821.
What is the body diode forward voltage (VSD) of SI7758DP-T1-GE3 at 3 A and 25 °C?
The body diode forward voltage VSD of SI7758DP-T1-GE3 is specified as 0.43 V (typical) to 0.55 V (max) at IS = 3 A and TJ = 25 °C. This low VSD results from its integrated Schottky diode structure and contributes directly to improved light-load efficiency in synchronous buck topologies.
How is the gate resistance (Rg) of SI7758DP-T1-GE3 characterized, and why does it matter?
The SI7758DP-T1-GE3 has a typical gate resistance Rg of 0.2 Ω, with a maximum of 1.0 Ω (measured at 1 MHz). This low Rg enables fast turn-on/turn-off transitions but necessitates careful gate driver design - a 1 Ω series resistor is recommended to suppress ringing and ensure stable switching at >500 kHz frequencies in high-dI/dt VRM applications.
SI7758DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 160 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7150 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7758DP-T1-GE3 FAQ
1.How can I place an order for SI7758DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7758DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7758DP-T1-GE3 reliable?
The price and inventory of SI7758DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7758DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7758DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7758DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7758DP-T1-GE3?
SI7758DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7758DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7758DP-T1-GE3?
For technical support, including SI7758DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7758DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7758DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7758DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7758DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7758DP-T1-GE3?
All SI7758DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7758DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7758DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7758DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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