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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7772DP-T1-GE3

Name: SI7772DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7772DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7772DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7772DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 35.6A PPAK SO-8

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Product details

Overview

SI7772DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen III power MOSFET with monolithically integrated Schottky diode in a PowerPAK® SO-8 package. It delivers R_DS(on) of 0.0130 Ω at V_GS = 10 V and 0.0165 Ω at V_GS = 4.5 V, supports 35.6 A continuous drain current at T_C = 25 °C, and is optimized for low-side notebook system power switching.

For engineers reviewing the SI7772DP-T1-GE3 datasheet, SI7772DP-T1-GE3 pinout, SI7772DP-T1-GE3 application, or SI7772DP-T1-GE3 equivalent, key selection criteria include its SkyFET® integration (MOSFET + Schottky), thermal performance matching DPAK (R_thJC = 3.5 °C/W), 8.3 nC gate charge at 4.5 V, body diode reverse recovery time of 17–34 ns, and compatibility with standard SO-8 PCB footprints.

Technical Context

This device implements a monolithic SkyFET® architecture combining a TrenchFET® Gen III silicon die with an integrated Schottky diode on a single substrate - eliminating parasitic inductance and enabling fast, low-loss synchronous rectification. Its gate threshold voltage (1.2–2.5 V) and low R_DS(on) support efficient 4.5 V logic-level drive in battery-powered systems.

The PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for direct thermal conduction to the PCB, achieving R_thJC = 3.5 °C/W (typical) and R_thJA = 27 °C/W (typical, t ≤ 10 s). Unlike standard SO-8, it uses the full footprint for die area - enabling larger silicon than conventional SO-8 while maintaining pin-to-pin compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 3.3 V/5 V/12 V rail switching in portable computing.
R_DS(on) @ V_GS = 10 V	0.0130 Ω - Enables <1.3 W conduction loss at 10 A, critical for thermally constrained notebook designs.
R_DS(on) @ V_GS = 4.5 V	0.0165 Ω - Ensures robust operation with 4.5 V gate drive from common PWM controllers.
Q_g @ V_GS = 4.5 V	8.3 nC - Low gate charge reduces driver power and switching losses in high-frequency DC-DC converters.
I_D (continuous, T_C = 25 °C)	35.6 A - High current capability supports multi-phase VRMs and high-power load switches.
V_SD (body diode)	0.48–0.65 V - Low forward voltage of integrated Schottky reduces freewheeling losses vs. standard MOSFET body diodes.
t_rr	17–34 ns - Fast reverse recovery minimizes shoot-through risk and EMI in synchronous buck topologies.

Pinout & Package

SI7772DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.04 mm), featuring exposed drain terminals on the bottom for enhanced thermal transfer. The top-side pinout matches standard SO-8: pins 1–4 are source (S), pin 5 is gate (G), and pins 6–8 are drain (D).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal MOSFET and Schottky cathode; electrically tied to PCB ground plane.
5	Gate (G)	Control terminal for MOSFET channel; requires <2.5 V threshold and <100 nA leakage per spec.
6, 7, 8	Drain (D)	High-current drain node shared by MOSFET and Schottky anode; bottom-side copper pad provides primary thermal path.

Key Features

Feature	Design Value
SkyFET® monolithic integration	Co-located MOSFET + Schottky on single die eliminates bond-wire inductance and improves diode recovery consistency.
100 % R_g and UIS tested	Guarantees gate resistance (0.3–2.6 Ω) and ruggedness against unclamped inductive switching events up to 15 A/11.25 mJ.
PowerPAK® SO-8 footprint compatibility	Direct replacement for standard SO-8 layouts without PCB redesign; leverages same land pattern but delivers DPAK-level thermal performance.
Exposed drain thermal pad	Bottom-side copper enables junction-to-board R_thJB ≈ 1.0 °C/W - reducing die temperature rise by ~40 °C vs. standard SO-8 under identical 2.7 W dissipation.

Applications

Server VRM Low-Side Switch	Notebook CPU Core Power
Use Scenario: High-current, high-frequency synchronous buck converter in dual-processor server motherboards. IC Role / Device Role / Timing Role: Low-side power switch handling up to 35.6 A continuous current with fast body-diode commutation during dead-time. Use Value: Integrated Schottky reduces reverse recovery losses by >50% vs. discrete MOSFET+diode solutions, lowering total converter loss by ~0.8 W at 20 A.	Use Scenario: Core voltage regulation for Intel Core i7/i9 processors in ultrabooks with strict thermal envelope limits. IC Role / Device Role / Timing Role: Synchronous rectifier in 500 kHz–1 MHz multiphase buck stage, driven by dedicated gate controller. Use Value: R_DS(on) = 0.0165 Ω at 4.5 V ensures stable operation with 5 V PWM drivers, while PowerPAK thermal design keeps T_J < 110 °C at full load.
USB-C PD Power Path	Industrial PLC I/O Protection
Use Scenario: Bidirectional power path switch enabling simultaneous charging and data negotiation in USB-C PD 3.0 systems. IC Role / Device Role / Timing Role: Reverse-polarity protected, low-R_DS(on) load switch controlling 20 V/5 A power delivery path. Use Value: 30 V V_DS rating and 0.0130 Ω R_DS(on) ensure <130 mW conduction loss at 5 A, meeting USB-C thermal safety requirements.	Use Scenario: Overcurrent-protected 24 V DC input module in programmable logic controllers with field-wiring protection. IC Role / Device Role / Timing Role: Protected high-side switch with integrated reverse-battery protection via Schottky clamp. Use Value: Body diode V_SD = 0.48–0.65 V clamps reverse transients below 1 V, preventing damage to downstream analog front-end circuitry.

Server VRM Low-Side Switch

Notebook CPU Core Power

Use Scenario: High-current, high-frequency synchronous buck converter in dual-processor server motherboards.

IC Role / Device Role / Timing Role: Low-side power switch handling up to 35.6 A continuous current with fast body-diode commutation during dead-time.

Use Value: Integrated Schottky reduces reverse recovery losses by >50% vs. discrete MOSFET+diode solutions, lowering total converter loss by ~0.8 W at 20 A.

Use Scenario: Core voltage regulation for Intel Core i7/i9 processors in ultrabooks with strict thermal envelope limits.

IC Role / Device Role / Timing Role: Synchronous rectifier in 500 kHz–1 MHz multiphase buck stage, driven by dedicated gate controller.

Use Value: R_DS(on) = 0.0165 Ω at 4.5 V ensures stable operation with 5 V PWM drivers, while PowerPAK thermal design keeps T_J < 110 °C at full load.

USB-C PD Power Path

Industrial PLC I/O Protection

Use Scenario: Bidirectional power path switch enabling simultaneous charging and data negotiation in USB-C PD 3.0 systems.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-R_DS(on) load switch controlling 20 V/5 A power delivery path.

Use Value: 30 V V_DS rating and 0.0130 Ω R_DS(on) ensure <130 mW conduction loss at 5 A, meeting USB-C thermal safety requirements.

Use Scenario: Overcurrent-protected 24 V DC input module in programmable logic controllers with field-wiring protection.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated reverse-battery protection via Schottky clamp.

Use Value: Body diode V_SD = 0.48–0.65 V clamps reverse transients below 1 V, preventing damage to downstream analog front-end circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7446DP-T1-GE3	Same PowerPAK SO-8 package; lower R_DS(on) (0.0095 Ω @ 10 V) but higher Q_g (12.5 nC); no integrated Schottky.	Requires external Schottky for synchronous rectification; better for pure switching where diode recovery is managed externally.	Select when lowest conduction loss dominates and external diode layout is acceptable.
Si7850DP-T1-GE3	Higher V_DS (40 V); slightly higher R_DS(on) (0.0175 Ω @ 4.5 V); same SkyFET® integration and PowerPAK package.	Supports wider input ranges (e.g., 24 V industrial rails); marginally higher conduction loss at 12 V systems.	Select when 40 V blocking is required for transient immunity in 24 V applications.

Compared with Si7446DP-T1-GE3, SI7772DP-T1-GE3 trades 0.0035 Ω higher R_DS(on) for integrated Schottky functionality and 4.2 nC lower Q_g at 4.5 V - simplifying layout and improving light-load efficiency. Against Si7850DP-T1-GE3, SI7772DP-T1-GE3 offers tighter 30 V rating for cost-sensitive 12 V/19 V notebook rails with identical thermal behavior.

Availability

SI7772DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook system power, server VRM low-side switching, and USB-C PD power path applications requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.

Supply support for SI7772DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.

The SI7772DP-T1-GE3 belongs to Vishay's SkyFET® family - engineered specifically for high-density, thermally constrained DC-DC conversion in portable computing and enterprise infrastructure, where monolithic MOSFET+Schottky integration delivers measurable efficiency and layout advantages.

FAQ

What is the maximum continuous drain current for SI7772DP-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI7772DP-T1-GE3 is 28.5 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8 package under sustained power dissipation. SI7772DP-T1-GE3 maintains this rating due to its low R_thJC of 3.5 °C/W, enabling higher current than standard SO-8 equivalents at elevated temperatures.

Does SI7772DP-T1-GE3 require a heatsink in typical notebook applications?

No, SI7772DP-T1-GE3 does not require an external heatsink in typical notebook applications. Its PowerPAK® SO-8 package transfers heat directly through the exposed drain pad to the PCB, achieving R_thJA = 27 °C/W (typical, t ≤ 10 s). At 12.9 A ambient-rated current and 2.5 W dissipation, board-level copper acts as sufficient heatsink - verified in Vishay's 1" × 1" FR4 test board data. SI7772DP-T1-GE3 is designed for passive thermal management.

How does the integrated Schottky diode in SI7772DP-T1-GE3 improve synchronous buck efficiency?

The integrated Schottky diode in SI7772DP-T1-GE3 reduces reverse recovery charge (Q_rr = 7–14 nC) and time (t_rr = 17–34 ns) versus standard MOSFET body diodes, minimizing dead-time losses and EMI. With V_SD = 0.48–0.65 V, it cuts freewheeling conduction loss by ~40% compared to discrete solutions. SI7772DP-T1-GE3 achieves this without added layout area or parasitic inductance - directly enhancing light-load and transient efficiency in buck converters.

Is SI7772DP-T1-GE3 compatible with standard SO-8 reflow soldering profiles?

Yes, SI7772DP-T1-GE3 is compatible with standard lead-free reflow profiles, including peak temperature of 255 °C (±0 °C tolerance) for ≤30 s, per Vishay document 73257. Its PowerPAK® SO-8 construction passes JEDEC J-STD-020 moisture sensitivity Level 1 testing. SI7772DP-T1-GE3 requires no special process adjustments beyond standard SO-8 reflow - though manual soldering with iron is not recommended due to its leadless design.

What is the gate-source leakage current specification for SI7772DP-T1-GE3?

The gate-source leakage current (I_GSS) for SI7772DP-T1-GE3 is ±100 nA maximum at V_GS = ±20 V and T_A = 25 °C, per the Electrical Specifications table. This low leakage ensures minimal gate drive current demand and stable turn-on/turn-off behavior in high-impedance PWM control circuits. SI7772DP-T1-GE3 maintains this specification across its full operating temperature range (-55 to +150 °C).

SI7772DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: SkyFET®, TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1084 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta), 29.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7772DP-T1-GE3 FAQ

1.How can I place an order for SI7772DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7772DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7772DP-T1-GE3 reliable?

The price and inventory of SI7772DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7772DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7772DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7772DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7772DP-T1-GE3?

SI7772DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7772DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7772DP-T1-GE3?

For technical support, including SI7772DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7772DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7772DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7772DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7772DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7772DP-T1-GE3?

All SI7772DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7772DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7772DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7772DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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