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Vishay Siliconix SI7788DP-T1-GE3
- Part No.:
- SI7788DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7788DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 50A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,580
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Product details
Overview
SI7788DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering 50 A continuous drain current at TC = 25 °C, RDS(on) of 3.1 mΩ at VGS = 10 V, and 4.1 mΩ at VGS = 4.5 V, optimized for low-side DC/DC conversion in notebook and gaming power stages.
For engineers reviewing the SI7788DP-T1-GE3 datasheet, SI7788DP-T1-GE3 pinout, SI7788DP-T1-GE3 application, or SI7788DP-T1-GE3 equivalent, key selection criteria include its 30-V VDS rating, sub-4-mΩ on-resistance at 4.5-V drive, 37-nC total gate charge, thermal performance matching DPAK (RthJC = 1.2 °C/W), and compatibility with standard SO-8 PCB footprints.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low RDS(on) and high current density in a leadless PowerPAK SO-8 package. Its gate threshold voltage (1.2–2.5 V) enables robust 4.5-V logic-level drive, while 100% Rg and UIS testing ensures production reliability under switching stress.
The device features integrated body diode with 0.74–1.1 V forward voltage at 2.7 A and 38–60 ns reverse recovery time, supporting synchronous rectification in buck converters. Thermal design leverages exposed drain pad for direct board heat sinking, achieving junction-to-case resistance of 1.2 °C/W and enabling stable operation up to TJ = 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12-V and 19-V input DC/DC stages |
| RDS(on) | 3.1 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-efficiency Vcore supplies |
| RDS(on) | 4.1 mΩ @ VGS = 4.5 V - Supports direct drive from common 5-V PWM controllers without level shifters |
| ID (continuous) | 50 A @ TC = 25 °C - Package-limited current handling suitable for high-current CPU/GPU VRMs |
| Qg | 37 nC @ VGS = 4.5 V - Low gate charge reduces driver power and switching losses in high-frequency (>500 kHz) designs |
| RthJC | 1.2 °C/W - Matches DPAK thermal performance, enabling use of compact copper pours instead of external heatsinks |
| VGS(th) | 1.2–2.5 V - Ensures turn-on margin across temperature and process variation in noisy digital power rails |
Pinout & Package
PowerPAK SO-8 is a leadless surface-mount package with 8 terminals, identical footprint and pinout to standard SO-8 but with exposed copper drain pads on the bottom for enhanced thermal conduction. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common return path for load current; tied to power ground plane for low-inductance routing |
| 2 (S) | Source | Dual-source connection lowers source inductance and improves switching stability |
| 3 (G) | Gate | Control terminal requiring <37 nC charge; routed with controlled impedance to minimize ringing |
| 4 (S) | Source | Third source terminal enhances current sharing and thermal spreading across PCB |
| 5 (D) | Drain | High-current input node; connected to large copper pour for heat dissipation and low DC resistance |
| 6 (D) | Drain | Second drain terminal increases current capacity and reduces package parasitic inductance |
| 7 (D) | Drain | Third drain terminal supports >50-A steady-state conduction with minimal thermal gradient |
| 8 (D) | Drain | Fourth drain terminal completes symmetric layout for balanced current distribution and EMI reduction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 3.1-mΩ RDS(on) in SO-8 footprint-2× lower than typical planar MOSFETs at same voltage rating |
| 100% Rg and UIS tested | Guarantees gate robustness against transient overvoltage and avalanche energy survival up to 80 mJ |
| Halogen-free & RoHS-compliant | Meets IPC-1752A material declaration requirements for consumer electronics and computing OEMs |
| PowerPAK SO-8 package | Direct drop-in replacement for SO-8 layouts with 1.2 °C/W RthJC-no PCB redesign needed for thermal upgrade |
| Exposed drain pad | Provides low-impedance thermal path to PCB; achieves 19 °C/W RthJA (t ≤ 10 s) on 1" × 1" FR4 |
Applications
| Server VRM Power Stage | Notebook CPU Core Supply |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to dual-socket Xeon processors with dynamic load steps up to 200 A/µs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 600–1000 kHz, conducting during bottom-half of PWM cycle with minimal conduction loss. Use Value: 4.1-mΩ RDS(on) at 4.5-V gate drive eliminates need for gate drivers, reducing BOM count and layout area by 15% versus discrete driver + MOSFET solutions. | Use Scenario: Compact 2-phase Vcore regulator powering Intel Core i7/i9 CPUs in ultrabooks, operating from 12-V battery or adapter input. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, handling peak currents >45 A with tight thermal constraints due to thin-profile chassis. Use Value: PowerPAK SO-8's 1.04-mm height and 1.2 °C/W RthJC enable full 50-A rating without heatsink-reducing system thickness by 0.8 mm vs. DPAK alternatives. |
| Gaming Laptop GPU Power | Desktop Motherboard Memory Regulator |
Use Scenario: Single-phase or 2-phase VRM delivering 0.9–1.3 V to NVIDIA RTX GPUs under sustained 150-W loads with aggressive thermal limits. IC Role / Device Role / Timing Role: Low-side FET in high-frequency (≥800 kHz) buck converter, optimized for low Qg and fast switching to minimize AC losses. Use Value: 37-nC Qg at 4.5 V reduces gate drive power by 40% vs. comparable 30-V MOSFETs, lowering local temperature rise near GPU VRM and improving system acoustics. | Use Scenario: DDR5 memory VDDQ regulator on ATX motherboards, delivering 1.25 V at up to 30 A with strict ripple (<20 mVpp) and transient response requirements. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 500-kHz buck converter, operating with tight duty-cycle control to maintain precise output voltage under rapid load transients. Use Value: 1.2–2.5 V VGS(th) ensures reliable turn-on even with ±50 mV gate noise from nearby high-speed memory traces, preventing shoot-through failures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7446DP-T1-GE3 | RDS(on) = 4.5 mΩ @ 4.5 V; Qg = 42 nC; same PowerPAK SO-8 package | Slightly higher conduction loss and gate drive requirement; validated in identical notebook VRM reference designs | Preferred when tighter VGS(th) distribution (1.4–2.2 V) is required for marginal gate drive conditions |
| IRF7478PBF | RDS(on) = 4.8 mΩ @ 4.5 V; Qg = 48 nC; standard SO-8 package with leads | Higher RthJA (65 °C/W) requires larger PCB copper; not drop-in due to different thermal pad layout | Selected only when legacy SO-8 land pattern must be reused without modification and thermal derating is acceptable |
Compared with SI7788DP-T1-GE3, Si7446DP-T1-GE3 trades 0.4-mΩ higher RDS(on) for improved gate threshold consistency, while IRF7478PBF sacrifices thermal performance and gate charge efficiency to retain through-hole-compatible assembly-making SI7788DP-T1-GE3 optimal for space-constrained, high-efficiency computing power stages.
Availability
SI7788DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core supplies, gaming laptop GPU regulators, and server VRM power stages requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SI7788DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The Si7788DP product line targets high-current, high-frequency DC/DC conversion in computing and consumer electronics, engineered to replace larger packages like DPAK while maintaining thermal and electrical performance in ultra-thin form factors.
FAQ
What is the maximum continuous drain current rating for SI7788DP-T1-GE3 at 70 °C case temperature?
The SI7788DP-T1-GE3 supports 50 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from the 25 °C value, reflecting the PowerPAK SO-8's superior thermal design that maintains current capability across elevated temperatures without derating.
Does SI7788DP-T1-GE3 require a gate resistor for stable operation in a 600-kHz buck converter?
Yes, SI7788DP-T1-GE3 benefits from an external gate resistor (typically 1–5 Ω) to dampen ringing caused by its low gate resistance (0.2–1.9 Ω) and high dV/dt during switching. The datasheet specifies turn-on delay of 15–30 ns and fall time of 8–15 ns at VGEN = 10 V, confirming fast edge rates that necessitate controlled gate drive impedance to prevent oscillation and EMI.
Can SI7788DP-T1-GE3 be mounted on a standard SO-8 PCB footprint without modification?
Yes, SI7788DP-T1-GE3 uses the PowerPAK SO-8 package, which shares identical outline, pin count, and pin spacing with standard SO-8. Vishay explicitly states it can be substituted directly onto existing SO-8 land patterns. However, optimal thermal performance requires extending the drain pad copper area per Application Note AN821 to leverage the exposed bottom-side thermal pad.
What is the body diode reverse recovery charge (Qrr) of SI7788DP-T1-GE3, and why does it matter in synchronous rectification?
The SI7788DP-T1-GE3 has a body diode Qrr of 36–60 nC, measured at IF = 5 A, dI/dt = 100 A/µs, and TJ = 25 °C. In synchronous buck converters, low Qrr minimizes reverse recovery losses and associated voltage spikes during high-side FET turn-on, directly improving efficiency and reducing EMI-especially critical in high-frequency (>500 kHz), high-current Vcore applications.
Is SI7788DP-T1-GE3 suitable for automotive applications such as ADAS power supplies?
No, SI7788DP-T1-GE3 is not qualified for automotive applications. It lacks AEC-Q101 certification, operates only up to TJ = 150 °C (below the 175 °C requirement for under-hood use), and has no specified PPAP or automotive-grade reliability data. Its design focus is computing and consumer electronics, where ambient temperatures remain below 85 °C and qualification standards differ significantly from automotive requirements.
SI7788DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 125 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5370 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 69W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7788DP-T1-GE3 FAQ
1.How can I place an order for SI7788DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7788DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7788DP-T1-GE3 reliable?
The price and inventory of SI7788DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7788DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7788DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7788DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7788DP-T1-GE3?
SI7788DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7788DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7788DP-T1-GE3?
For technical support, including SI7788DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7788DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7788DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7788DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7788DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7788DP-T1-GE3?
All SI7788DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7788DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7788DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7788DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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