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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7794DP-T1-GE3

Name: SI7794DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7794DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7794DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7794DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 28.6A/60A PPAK

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Product details

Overview

SI7794DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) Power MOSFET with integrated Schottky diode in a PowerPAK® SO-8 package. It delivers 60 A continuous drain current at T_C = 25 °C, R_DS(on) = 3.4 mΩ at V_GS = 10 V, and 4.2 mΩ at V_GS = 4.5 V, enabling high-efficiency low-side switching in notebook PC Vcore and memory power stages.

For engineers reviewing the SI7794DP-T1-GE3 datasheet, SI7794DP-T1-GE3 pinout, SI7794DP-T1-GE3 application, or SI7794DP-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET®/TrenchFET® Gen III architecture, 100 % R_g and avalanche testing, RoHS/halogen-free compliance, and thermal performance matching DPAK while retaining SO-8 footprint compatibility.

Technical Context

This device integrates a trench-gate N-channel MOSFET and a co-packaged Schottky diode in a single PowerPAK SO-8 leadless package. Its monolithic SkyFET® structure enables simultaneous optimization of R_DS(on), Q_g (23 nC at V_GS = 4.5 V), and body diode recovery (t_rr = 28–55 ns, Q_rr = 17–34 nC).

The PowerPAK SO-8 construction exposes the drain pad on the bottom surface for direct thermal conduction to the PCB, achieving R_thJC = 2.1 °C/W (typ.) and R_thJA = 20 °C/W (t ≤ 10 s). Its gate threshold voltage (V_GS(th) = 1–2.5 V) and low C_iss (2520 pF) support fast, efficient 4.5 V logic-level drive in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for low-voltage DC-DC output stages
R_DS(on)	3.4 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 60 A in high-current Vcore rails
I_D (continuous)	60 A @ T_C = 25 °C - Supports high-phase-count notebook CPU core supplies
Q_g	23 nC @ V_GS = 4.5 V - Low gate charge reduces driver loss and improves efficiency at 1–2 MHz switching
V_GS(th)	1–2.5 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers
t_rr / Q_rr	28–55 ns / 17–34 nC - Fast, low-charge body diode minimizes shoot-through and dead-time losses
R_thJC	2.1 °C/W (typ.) - Thermal resistance enables direct PCB heat sinking comparable to DPAK

Pinout & Package

SI7794DP-T1-GE3 uses the PowerPAK® SO-8 leadless package (5.15 mm × 6.15 mm, 0.97–1.12 mm height), with exposed drain pads on the bottom surface for enhanced thermal transfer. The top-side pinout matches standard SO-8: pins 1–4 are Source–Source–Source–Gate; pins 5–8 are Drain–Drain–Drain–Drain.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, S	Source terminals (common)	Low-impedance source connection for return path; electrically tied internally
4, G	Gate terminal	Control input for MOSFET channel; requires <2.5 V threshold for full enhancement
5, 6, 7, 8, D	Drain terminals (common)	High-current output node; bottom-exposed copper pad provides primary thermal path to PCB

Key Features

Feature	Design Value
SkyFET® monolithic integration	Co-optimized MOSFET + Schottky diode eliminates external diode placement and layout parasitics
100 % R_g tested	Guarantees gate resistance ≤ 2.2 Ω, ensuring predictable switching speed and EMI control
100 % avalanche rated	Withstands 40 A single-pulse avalanche current (E_AS = 80 mJ), enhancing system robustness during load dump or short-circuit events
PowerPAK SO-8 footprint	Drop-in replacement for standard SO-8 layouts without PCB redesign; enables larger die than SO-8 while maintaining same area
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally constrained applications

Applications

Server VRM Output Stage	Notebook Vcore Regulation
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in enterprise servers. IC Role / Device Role: Low-side synchronous rectifier switch with integrated Schottky diode. Use Value: 3.4 mΩ R_DS(on) and 23 nC Q_g reduce conduction and switching losses, enabling >90 % efficiency at 60 A per phase.	Use Scenario: Compact, thermally constrained Vcore supply in ultrathin notebook platforms. IC Role / Device Role: Low-side FET in dual-phase buck regulator powering Intel/AMD mobile processors. Use Value: PowerPAK SO-8's 2.1 °C/W R_thJC maintains junction temperature <125 °C under 28.6 A ambient-limited operation, avoiding thermal derating.
Memory Power Delivery	GPU Core Supply
Use Scenario: Point-of-load regulator for DDR4/LPDDR5 memory subsystems requiring fast transient response. IC Role / Device Role: Low-side switch managing high di/dt currents during memory burst access. Use Value: 28 ns body diode t_rr and low Q_rr minimize reverse recovery loss and voltage overshoot during light-to-heavy load transitions.	Use Scenario: High-density GPU core rail in gaming laptops and mobile workstations. IC Role / Device Role: Low-side MOSFET in 3+1 phase buck converter delivering up to 120 A total. Use Value: 60 A continuous rating at T_C = 25 °C and 100 % avalanche test allow safe operation under GPU peak loads and thermal cycling stress.

Server VRM Output Stage

Notebook Vcore Regulation

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in enterprise servers.

IC Role / Device Role: Low-side synchronous rectifier switch with integrated Schottky diode.

Use Value: 3.4 mΩ R_DS(on) and 23 nC Q_g reduce conduction and switching losses, enabling >90 % efficiency at 60 A per phase.

Use Scenario: Compact, thermally constrained Vcore supply in ultrathin notebook platforms.

IC Role / Device Role: Low-side FET in dual-phase buck regulator powering Intel/AMD mobile processors.

Use Value: PowerPAK SO-8's 2.1 °C/W R_thJC maintains junction temperature <125 °C under 28.6 A ambient-limited operation, avoiding thermal derating.

Memory Power Delivery

GPU Core Supply

Use Scenario: Point-of-load regulator for DDR4/LPDDR5 memory subsystems requiring fast transient response.

IC Role / Device Role: Low-side switch managing high di/dt currents during memory burst access.

Use Value: 28 ns body diode t_rr and low Q_rr minimize reverse recovery loss and voltage overshoot during light-to-heavy load transitions.

Use Scenario: High-density GPU core rail in gaming laptops and mobile workstations.

IC Role / Device Role: Low-side MOSFET in 3+1 phase buck converter delivering up to 120 A total.

Use Value: 60 A continuous rating at T_C = 25 °C and 100 % avalanche test allow safe operation under GPU peak loads and thermal cycling stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET with Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7446DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 4.5 V; lower I_D = 40 A; same PowerPAK SO-8 package	Better suited for mid-power memory rails where 60 A headroom is unnecessary	Select when thermal budget allows higher R_DS(on) and cost sensitivity outweighs current headroom needs
SiR872DP-T1-GE3	R_DS(on) = 2.7 mΩ @ 10 V; higher Q_g = 52 nC; same 30 V rating and PowerPAK SO-8	Optimized for ultra-low R_DS(on) in space-constrained server VRMs where gate drive capability supports higher Q_g	Choose when minimizing conduction loss dominates over switching loss and driver strength is sufficient

Compared with Si7446DP-T1-GE3 and SiR872DP-T1-GE3, SI7794DP-T1-GE3 balances lowest Q_g (23 nC) with competitive R_DS(on) (3.4 mΩ), making it optimal for high-frequency, medium-current notebook Vcore designs where gate drive efficiency and thermal management are jointly critical.

Availability

SI7794DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook PCs, server VRMs, and GPU core power delivery requiring stable component supply, long-term lifecycle assurance, and halogen-free compliance.

Supply support for SI7794DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

SI7794DP-T1-GE3 belongs to the SkyFET® PowerPAK SO-8 family, engineered specifically for high-current, high-frequency synchronous buck converters in portable computing and data center power systems.

FAQ

What is the maximum continuous drain current rating for SI7794DP-T1-GE3 at 70 °C case temperature?

The SI7794DP-T1-GE3 supports 60 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects sustained operation under thermal conditions typical of high-power notebook motherboard layouts with adequate copper pour and airflow. The device maintains this current capability due to its low R_DS(on) and optimized PowerPAK SO-8 thermal path, which limits junction temperature rise to within 150 °C maximum.

Does SI7794DP-T1-GE3 require a heatsink when operating at 60 A continuous current?

No external heatsink is required for SI7794DP-T1-GE3 at 60 A continuous current if mounted on a properly designed PCB with ≥1 in² of 2-oz copper on the drain pad layer. Its R_thJC = 2.1 °C/W (typ.) and R_thJA = 20 °C/W (t ≤ 10 s) enable direct board-level thermal dissipation. The PowerPAK SO-8's exposed drain pad must be soldered to a large copper area; adding spreading copper beyond ~0.4 in² yields diminishing thermal returns per Vishay Application Note AN821.

Is SI7794DP-T1-GE3 compatible with standard SO-8 footprints and reflow profiles?

Yes, SI7794DP-T1-GE3 uses the PowerPAK SO-8 package, which shares identical outline, pin count, and pin spacing with standard SO-8-enabling drop-in replacement without PCB changes. It is qualified for Pb-free reflow per JEDEC J-STD-020, with peak temperature up to 255 °C for ≤30 s. Vishay document 73257 specifies the exact profile, including ramp rates and time-above-liquidus windows.

How does the integrated Schottky diode in SI7794DP-T1-GE3 improve synchronous buck converter performance?

The monolithically integrated Schottky diode in SI7794DP-T1-GE3 provides forward voltage (V_SD = 0.39–0.5 V at 3 A) and reverse recovery (t_rr = 28–55 ns, Q_rr = 17–34 nC) superior to discrete body diodes. This reduces dead-time losses, minimizes voltage overshoot during light-load transitions, and eliminates need for external diode placement-improving layout density and EMI behavior in high-frequency (>1 MHz) notebook Vcore regulators.

What is the gate threshold voltage range for SI7794DP-T1-GE3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for SI7794DP-T1-GE3 is 1.0–2.5 V at I_D = 250 µA, ensuring reliable turn-on with 3.3 V or 5 V gate drivers. This low threshold supports logic-level drive while maintaining noise immunity. For full enhancement and minimal R_DS(on), V_GS ≥ 4.5 V is recommended-achievable with standard PWM controller gate drivers without level-shifting circuitry.

SI7794DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: SkyFET®, TrenchFET® Gen III

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 28.6A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2520 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 5W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7794DP-T1-GE3 FAQ

1.How can I place an order for SI7794DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7794DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7794DP-T1-GE3 reliable?

The price and inventory of SI7794DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7794DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7794DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7794DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7794DP-T1-GE3?

SI7794DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7794DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7794DP-T1-GE3?

For technical support, including SI7794DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7794DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7794DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7794DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7794DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7794DP-T1-GE3?

All SI7794DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7794DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7794DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7794DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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