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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7802DN-T1-E3

Name: SI7802DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7802DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7802DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7802DN-T1-E3.pdf

Description:: MOSFET N-CH 250V 1.24A PPAK

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Product details

Overview

SI7802DN-T1-E3 from Vishay Siliconix is a lead-free, halogen-free N-channel TrenchFET® power MOSFET rated for 250 V drain-source voltage, with R_DS(on) = 0.435 Ω at V_GS = 10 V and continuous drain current of 1.95 A at T_J = 150 °C. It serves as a primary-side switching device in isolated DC/DC converters and single-ended flyback topologies.

For engineers reviewing the SI7802DN-T1-E3 datasheet, SI7802DN-T1-E3 pinout, SI7802DN-T1-E3 application, or SI7802DN-T1-E3 equivalent, key selection criteria include avalanche ruggedness (E_AS = 0.3 mJ), 100% gate resistance testing, PWM-optimized switching performance, and PowerPAK® 1212-8 surface-mount package compatibility with high-density board layouts.

Technical Context

This MOSFET employs Vishay's trench-gate process to achieve low R_DS(on) while maintaining robust 250 V breakdown voltage and guaranteed avalanche energy rating. Its gate threshold voltage (2.4–3.6 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device features fully characterized dynamic parameters including Q_g = 14–21 nC, Q_gd = 4.4 nC, and fast switching times (t_d(off) = 21–35 ns), supporting efficient operation in high-frequency DC/DC converters up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports primary-side switching in offline 115/230 VAC-derived supplies with margin
R_DS(on) @ V_GS = 10 V	0.435 Ω - limits conduction loss to ≤0.83 W at 1.95 A, enabling thermally constrained designs
I_D (continuous, T_J = 150 °C)	1.95 A - defines maximum steady-state load current under worst-case junction temperature
E_AS	0.3 mJ - quantifies single-pulse avalanche energy handling capability for inductive turn-off stress
Q_g	14–21 nC - determines gate drive power requirement and influences switching speed vs. driver strength trade-off
R_thJA (steady state)	65–81 °C/W - sets thermal rise over ambient for PCB-mounted operation without heatsink
V_GS(th)	2.4–3.6 V - ensures clean turn-on with 3.3 V or 5 V microcontroller GPIO or dedicated gate drivers

Pinout & Package

SI7802DN-T1-E3 uses the PowerPAK® 1212-8 surface-mount package - an 8-terminal, leadless, bottom-termination design measuring 3.30 mm × 3.30 mm. The exposed drain pads provide low-inductance, high-current paths and enhanced thermal conduction to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection for internal parallel FET cells; tied to PCB ground plane for low-impedance return path
5	Gate	Control terminal; requires <100 nA leakage current and drives ~21 nC total charge for full enhancement
6, 7, 8	Drain	High-voltage output node; multiple terminals reduce current density and improve thermal spreading to copper

Key Features

Feature	Design Value
PWM-optimized TrenchFET® architecture	Minimizes Q_gd/Q_g ratio (≈0.21), reducing Miller-induced switching delay and improving hard-switching efficiency
Avalanche-rated (IAS = 2.5 A, EAS = 0.3 mJ)	Enables reliable operation in inductive switching circuits without external snubbers in many primary-side applications
100% R_g tested	Guarantees gate resistance between 1.6–2.4 Ω, ensuring predictable turn-on/turn-off timing across production lots
Halogen-free & Pb-free (JEDEC J-STD-020)	Meets RoHS 2011/65/EU and IEC 61249-2-21 requirements for environmentally compliant industrial and consumer systems

Applications

Offline AC/DC Adapters	Isolated DC/DC Converters
Use Scenario: 5–15 W universal-input (90–264 VAC) flyback adapter powering IoT sensors or USB peripherals. IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer during each PWM cycle; operates at 65–130 kHz. Use Value: Low R_DS(on) and avalanche rating allow simplified transformer design and elimination of clamp circuits in cost-sensitive adapters.	Use Scenario: Board-mounted 12 V to 5 V/3.3 V isolated DC/DC module for industrial PLC I/O isolation. IC Role / Device Role / Timing Role: High-side switch in single-ended forward or flyback topology; driven by optocoupled or transformer-isolated gate signal. Use Value: PowerPAK® 1212-8 footprint enables compact layout while maintaining >250 V clearance for reinforced insulation compliance.
LED Driver Primary Switch	Small-Signal SMPS Controllers
Use Scenario: Constant-voltage LED driver for signage or architectural lighting operating from 120/230 VAC mains. IC Role / Device Role / Timing Role: Main switching element in quasi-resonant or fixed-frequency flyback controller reference designs. Use Value: Tight V_GS(th) distribution ensures consistent startup behavior and reduces risk of partial turn-on during brownout conditions.	Use Scenario: Auxiliary supply generation for gate drivers or bias rails in larger multi-kW power converters. IC Role / Device Role / Timing Role: Standalone primary switch controlled by external PWM IC; handles <2 W output with minimal BOM count. Use Value: Integrated body diode (V_SD = 0.8–1.2 V) supports synchronous rectification in low-power auxiliary windings without extra components.

Offline AC/DC Adapters

Isolated DC/DC Converters

Use Scenario: 5–15 W universal-input (90–264 VAC) flyback adapter powering IoT sensors or USB peripherals.

IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer during each PWM cycle; operates at 65–130 kHz.

Use Value: Low R_DS(on) and avalanche rating allow simplified transformer design and elimination of clamp circuits in cost-sensitive adapters.

Use Scenario: Board-mounted 12 V to 5 V/3.3 V isolated DC/DC module for industrial PLC I/O isolation.

IC Role / Device Role / Timing Role: High-side switch in single-ended forward or flyback topology; driven by optocoupled or transformer-isolated gate signal.

Use Value: PowerPAK® 1212-8 footprint enables compact layout while maintaining >250 V clearance for reinforced insulation compliance.

LED Driver Primary Switch

Small-Signal SMPS Controllers

Use Scenario: Constant-voltage LED driver for signage or architectural lighting operating from 120/230 VAC mains.

IC Role / Device Role / Timing Role: Main switching element in quasi-resonant or fixed-frequency flyback controller reference designs.

Use Value: Tight V_GS(th) distribution ensures consistent startup behavior and reduces risk of partial turn-on during brownout conditions.

Use Scenario: Auxiliary supply generation for gate drivers or bias rails in larger multi-kW power converters.

IC Role / Device Role / Timing Role: Standalone primary switch controlled by external PWM IC; handles <2 W output with minimal BOM count.

Use Value: Integrated body diode (V_SD = 0.8–1.2 V) supports synchronous rectification in low-power auxiliary windings without extra components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 250 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK25Z	Higher R_DS(on) (0.55 Ω @ 10 V), TO-92 package, lower ID (2 A pulsed only)	Through-hole mounting; less suitable for high-density SMT designs	Prefer SI7802DN-T1-E3 for space-constrained, automated assembly environments requiring low-profile SMT
IXTP2N25P	TO-220 package, higher R_DS(on) (0.48 Ω), no avalanche rating specified	Requires heatsink for >1 A continuous operation; lacks E_AS guarantee	Choose SI7802DN-T1-E3 when board-level thermal management is limited and unclamped inductive switching occurs

Compared with STP2NK25Z and IXTP2N25P, SI7802DN-T1-E3 delivers superior power density, guaranteed avalanche ruggedness, and optimized gate charge for high-frequency PWM control-making it the preferred choice for miniaturized, high-reliability primary-side switching where thermal and layout constraints dominate.

Availability

SI7802DN-T1-E3 is available at Aetrix Electronics and suitable for offline AC/DC adapters, isolated DC/DC converters, and LED driver primary-side switching requiring stable component supply and long-term manufacturability.

Supply support for SI7802DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and high-volume manufacturability.

The Si7802DN belongs to Vishay's TrenchFET® Gen III family, engineered specifically for primary-side switching in compact, high-efficiency AC/DC and isolated DC/DC power supplies operating up to 250 V.

FAQ

What is the maximum continuous drain current rating for SI7802DN-T1-E3 at 70 °C ambient temperature?

The SI7802DN-T1-E3 supports 1.56 A continuous drain current at T_A = 70 °C with proper PCB copper area per Vishay's recommended layout. This value reflects thermal derating from its 1.95 A rating at 25 °C ambient and accounts for junction-to-ambient thermal resistance (R_thJA) under typical surface-mount conditions. Always verify actual board temperature rise using thermal simulation or measurement before final design sign-off.

Does SI7802DN-T1-E3 have a specified avalanche energy rating, and how is it tested?

Yes, SI7802DN-T1-E3 is fully avalanche tested with a guaranteed single-pulse avalanche energy (E_AS) of 0.3 mJ and single-pulse avalanche current (I_AS) of 2.5 A (L = 0.1 mH). Testing follows JEDEC-standard procedures per datasheet Document Number 73133, confirming ruggedness under inductive turn-off stress common in flyback and forward converter topologies.

Can SI7802DN-T1-E3 be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

SI7802DN-T1-E3 has a gate threshold voltage range of 2.4–3.6 V, so a 3.3 V GPIO can partially enhance the device but will not achieve full R_DS(on) specification. At V_GS = 3.3 V, R_DS(on) rises significantly above 0.435 Ω, increasing conduction loss. For reliable operation, SI7802DN-T1-E3 should be driven with ≥5 V, ideally 10 V, using a dedicated gate driver or level-shifting circuit.

What is the thermal resistance from junction to case (R_thJC) for SI7802DN-T1-E3, and how does it impact heatsinking?

The SI7802DN-T1-E3 has a maximum junction-to-case (drain) thermal resistance of 2.4 °C/W. Because the PowerPAK® 1212-8 package exposes the drain on the bottom side, this low R_thJC enables direct thermal coupling to inner-layer or backside copper planes. Unlike TO-220 devices, SI7802DN-T1-E3 does not require mechanical heatsinks-its thermal path relies entirely on PCB copper area and via stitching to internal ground layers.

Is SI7802DN-T1-E3 compatible with lead-free reflow soldering processes?

Yes, SI7802DN-T1-E3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak soldering temperature up to 260 °C. The PowerPAK® 1212-8 package is designed for standard IR or vapor-phase reflow profiles. Manual soldering with an iron is not recommended due to the leadless construction and exposed copper terminations, which do not support conventional fillet formation.

SI7802DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 1.24A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 435mOhm @ 1.95A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7802DN-T1-E3 FAQ

1.How can I place an order for SI7802DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7802DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7802DN-T1-E3 reliable?

The price and inventory of SI7802DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7802DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7802DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7802DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7802DN-T1-E3?

SI7802DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7802DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7802DN-T1-E3?

For technical support, including SI7802DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7802DN-T1-E3 requirements.

6.How does Aetrix verify that SI7802DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7802DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7802DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7802DN-T1-E3?

All SI7802DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7802DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7802DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7802DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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