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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7802DN-T1-GE3

Name: SI7802DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7802DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7802DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7802DN-T1-GE3.pdf

Description:: MOSFET N-CH 250V 1.24A PPAK

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Product details

Overview

SI7802DN-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 250-V TrenchFET® power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 0.435 Ω at V_GS = 10 V, I_D = 1.95 A, and avalanche-rated for primary-side switching in isolated DC/DC converters.

For engineers reviewing the SI7802DN-T1-GE3 datasheet, SI7802DN-T1-GE3 pinout, SI7802DN-T1-GE3 application, or SI7802DN-T1-GE3 equivalent, key selection criteria include its 250-V V_DS, PWM-optimized gate charge (Q_g = 14–21 nC), 100% R_g tested, and thermal resistance R_thJA = 65 °C/W (steady state) for compact high-voltage switch designs.

Technical Context

This MOSFET employs Vishay's trench-based silicon process to achieve low on-resistance and fast switching in a thermally enhanced 1212 footprint. Its gate threshold voltage (V_GS(th) = 2.4–3.6 V) enables reliable turn-on with standard 5-V or 10-V gate drivers, while Q_gd = 4.4 nC supports efficient hard-switching operation in flyback and forward topologies.

The device is fully avalanche-tested (I_AS = 2.5 A, E_AS = 0.3 mJ) and rated for continuous operation up to T_J = 150 °C. Its integrated body diode (V_SD = 0.8–1.2 V at I_S = 3.2 A) supports synchronous rectification and freewheeling in single-ended circuits without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports primary-side switching in 24–48 V input isolated DC/DC converters with margin against voltage spikes
R_DS(on)	0.435 Ω @ V_GS = 10 V - delivers ≤0.83 W conduction loss at I_D = 1.95 A, enabling compact thermal design
I_D (T_J = 150 °C)	1.95 A - defines maximum continuous current under worst-case junction temperature conditions
Q_g	14–21 nC - determines gate drive power and switching speed in PWM-controlled topologies
R_thJA	65 °C/W (steady state) - sets thermal rise on standard FR4 PCBs; requires ≤2.5 W dissipation for ΔT < 162.5 °C
E_AS	0.3 mJ - quantifies single-pulse avalanche energy handling capability for transient overvoltage robustness

Pinout & Package

Package: PowerPAK® 1212-8 - surface-mount, leadless, 3.3 mm × 3.3 mm footprint with exposed drain paddle for enhanced thermal performance and mechanical stability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; electrically tied internally; used for return path and thermal sinking
5, 6, 7, 8	Drain (D)	High-side power output node; connected to exposed copper paddle for low-inductance, high-current routing
G	Gate (G)	Control terminal; requires ≤±20 V drive; 100% R_g tested for consistent switching behavior

Key Features

Feature	Design Value
PWM-optimized TrenchFET®	Low Q_gd/Q_gs ratio (4.4/2.8 nC) minimizes Miller-induced switching delay and improves duty-cycle control fidelity
Avalanche-tested	Guaranteed single-pulse ruggedness (I_AS = 2.5 A, E_AS = 0.3 mJ) eliminates need for external snubbers in flyback clamp circuits
100% R_g tested	Ensures gate resistance consistency (1.6–2.4 Ω) across production lots, critical for predictable turn-on/turn-off timing
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS; suitable for automotive and industrial applications requiring green material compliance

Applications

Primary Side Switch	Small DC/DC Circuits
Use Scenario: High-voltage switching node in 24–48 V input flyback converters powering industrial sensors or IoT edge nodes. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer during PWM ON-time; operates at 50–500 kHz. Use Value: 250-V rating and avalanche ruggedness allow direct replacement of higher-cost superjunction MOSFETs in cost-sensitive 1–3 W isolated supplies.	Use Scenario: Compact off-line adapter for USB-C PD accessories or smart home hubs with space-constrained PCB layouts. IC Role / Device Role / Timing Role: Main switching transistor in self-oscillating or controller-driven buck-derived topologies. Use Value: PowerPAK® 1212-8 footprint reduces board area by >40% vs. SO-8 while maintaining thermal performance via exposed drain pad.
Single-Ended Primary Switching	Isolated Gate Driver Interface
Use Scenario: Forward converter primary switch in telecom power modules where unidirectional current flow and low conduction loss are prioritized. IC Role / Device Role / Timing Role: Unidirectional high-side switch synchronized to transformer reset; conducts during main duty cycle. Use Value: Low R_DS(on) (0.435 Ω) limits I²R losses to <0.8 W at full load, improving efficiency in 12–24 V output designs.	Use Scenario: Level-shifting interface between low-voltage microcontroller GPIO and high-side gate driver IC in half-bridge motor control stages. IC Role / Device Role / Timing Role: Isolation switch enabling safe gate drive signal transmission without ground loop coupling. Use Value: Tight V_GS(th) distribution (2.4–3.6 V) ensures deterministic turn-on with 3.3-V logic signals, reducing timing jitter in gate drive paths.

Primary Side Switch

Small DC/DC Circuits

Use Scenario: High-voltage switching node in 24–48 V input flyback converters powering industrial sensors or IoT edge nodes.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer during PWM ON-time; operates at 50–500 kHz.

Use Value: 250-V rating and avalanche ruggedness allow direct replacement of higher-cost superjunction MOSFETs in cost-sensitive 1–3 W isolated supplies.

Use Scenario: Compact off-line adapter for USB-C PD accessories or smart home hubs with space-constrained PCB layouts.

IC Role / Device Role / Timing Role: Main switching transistor in self-oscillating or controller-driven buck-derived topologies.

Use Value: PowerPAK® 1212-8 footprint reduces board area by >40% vs. SO-8 while maintaining thermal performance via exposed drain pad.

Single-Ended Primary Switching

Isolated Gate Driver Interface

Use Scenario: Forward converter primary switch in telecom power modules where unidirectional current flow and low conduction loss are prioritized.

IC Role / Device Role / Timing Role: Unidirectional high-side switch synchronized to transformer reset; conducts during main duty cycle.

Use Value: Low R_DS(on) (0.435 Ω) limits I²R losses to <0.8 W at full load, improving efficiency in 12–24 V output designs.

Use Scenario: Level-shifting interface between low-voltage microcontroller GPIO and high-side gate driver IC in half-bridge motor control stages.

IC Role / Device Role / Timing Role: Isolation switch enabling safe gate drive signal transmission without ground loop coupling.

Use Value: Tight V_GS(th) distribution (2.4–3.6 V) ensures deterministic turn-on with 3.3-V logic signals, reducing timing jitter in gate drive paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	Higher V_DS = 300 V; R_DS(on) = 0.32 Ω @ 10 V; larger PowerPAK® 1212-8S package	Better suited for 48–72 V input systems requiring higher voltage margin	Select when system V_IN exceeds 50 V or avalanche energy >0.3 mJ is required
IRF7470PBF	SO-8 package; V_DS = 250 V; R_DS(on) = 0.42 Ω @ 10 V; no halogen-free certification	Legacy through-hole compatible layout; lower thermal performance (R_thJA ≈ 90 °C/W)	Choose only if SO-8 footprint is fixed and RoHS/halogen compliance is not mandated

Compared with Si7850DP-T1-GE3 and IRF7470PBF, the SI7802DN-T1-GE3 offers optimal balance of voltage rating, conduction loss, and green compliance in the smallest possible footprint-making it ideal for next-generation space-constrained, high-reliability DC/DC modules.

Availability

SI7802DN-T1-GE3 is available at Aetrix Electronics and suitable for primary-side switching, small DC/DC circuits, and single-ended primary switching applications requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SI7802DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si78xx family targets high-voltage, low-power switching applications in isolated power conversion, where trench technology, avalanche ruggedness, and compact packaging enable robust, cost-effective solutions.

FAQ

What is the maximum continuous drain current for SI7802DN-T1-GE3 at 70 °C ambient?

The SI7802DN-T1-GE3 supports 1.56 A continuous drain current at T_A = 70 °C (steady-state), per its Absolute Maximum Ratings table. This value assumes proper PCB copper area and thermal relief; actual current capability depends on layout and heatsinking. The SI7802DN-T1-GE3 must be derated linearly above 25 °C ambient using its specified R_thJA = 65 °C/W.

Does SI7802DN-T1-GE3 have an integrated body diode, and what is its forward voltage?

Yes, the SI7802DN-T1-GE3 includes an intrinsic body diode with V_SD = 0.8–1.2 V at I_S = 3.2 A and V_GS = 0 V. This diode enables freewheeling in flyback and forward converters. Its reverse recovery time (t_rr) is 65–100 ns, supporting operation up to several hundred kHz without excessive switching loss.

Is SI7802DN-T1-GE3 suitable for use in automotive applications?

The SI7802DN-T1-GE3 is not AEC-Q101 qualified and lacks automotive-specific qualification data. While its operating temperature range (−55 to +150 °C) meets under-hood thermal requirements, Vishay does not certify this part for automotive safety-critical functions. For automotive use, SI7802DN-T1-GE3 must undergo customer-level validation per ISO 26262 requirements.

What is the gate threshold voltage range for SI7802DN-T1-GE3, and how does it affect drive requirements?

The SI7802DN-T1-GE3 has a gate threshold voltage V_GS(th) of 2.4–3.6 V at I_D = 250 µA. This allows reliable turn-on with 3.3-V or 5-V logic-level drivers, but full enhancement (to achieve R_DS(on) ≤ 0.435 Ω) requires V_GS ≥ 10 V. The SI7802DN-T1-GE3 should not be driven near its threshold for high-efficiency switching.

Can SI7802DN-T1-GE3 be reworked using hand soldering tools?

No-Vishay explicitly advises against manual soldering with a soldering iron for the SI7802DN-T1-GE3 due to its PowerPAK® 1212-8 leadless construction. Rework requires controlled reflow profiling per document 73257. Improper heating risks delamination or voiding under the exposed drain paddle, compromising thermal and electrical performance of the SI7802DN-T1-GE3.

SI7802DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 1.24A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 435mOhm @ 1.95A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7802DN-T1-GE3 FAQ

1.How can I place an order for SI7802DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7802DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7802DN-T1-GE3 reliable?

The price and inventory of SI7802DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7802DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7802DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7802DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7802DN-T1-GE3?

SI7802DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7802DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7802DN-T1-GE3?

For technical support, including SI7802DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7802DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7802DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7802DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7802DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7802DN-T1-GE3?

All SI7802DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7802DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7802DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7802DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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