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Vishay Siliconix SI7804DN-T1-E3
- Part No.:
- SI7804DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7804DN-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 6.5A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,641
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Product details
Overview
SI7804DN-T1-E3 from Vishay Siliconix is an N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 0.0185 Ω at VGS = 10 V and 0.030 Ω at VGS = 4.5 V, rated for 10 A continuous drain current (TJ = 150 °C), and optimized for high-efficiency DC/DC conversion stages.
For engineers reviewing the SI7804DN-T1-E3 datasheet, SI7804DN-T1-E3 pinout, SI7804DN-T1-E3 application, or SI7804DN-T1-E3 equivalent, key selection criteria include its low thermal resistance (RthJC = 4.5 °C/W typ.), 100 % Rg tested gate resistance, and halogen-free, lead-free construction compliant with IEC 61249-2-21.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve fast switching with low gate charge (Qg = 8.7–13 nC at VDS = 15 V, VGS = 5 V, ID = 10 A) and low output capacitance (Ciss, Coss, Crss specified across VDS). Its gate threshold voltage (VGS(th) = 0.8–1.8 V) ensures reliable turn-on with standard logic-level drivers.
The PowerPAK 1212-8 package features an exposed drain pad on the bottom side for direct thermal conduction to the PCB, enabling junction-to-ambient thermal resistance as low as 28 °C/W (10 s pulse) and 65 °C/W (steady state), with a profile height of only 1.07 mm - critical for ultra-thin power modules and space-constrained POL converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and transient margin. |
| RDS(on) @ VGS = 10 V | 0.0185 Ω - Enables <185 mW conduction loss at 10 A, reducing heat generation in high-current buck switches. |
| RDS(on) @ VGS = 4.5 V | 0.030 Ω - Supports efficient operation with 5 V or 4.5 V gate drive, eliminating need for level-shifting in many controller ICs. |
| ID (continuous) | 10 A @ TJ = 150 °C - Sustains full load in compact 12 V → 1 V/10 A point-of-load converters without derating. |
| Qg | 8.7–13 nC - Low total gate charge minimizes driver power loss and enables >1 MHz switching in resonant topologies. |
| RthJC | 4.5 °C/W (typ.) - Direct die-to-PCB thermal path allows >2 W dissipation with minimal ΔT, improving reliability vs. SO-8/TSSOP-8. |
| VGS(th) | 0.8–1.8 V - Ensures robust turn-on with 3.3 V or 5 V microcontroller GPIO or PWM controller outputs. |
Pinout & Package
SI7804DN-T1-E3 uses the PowerPAK® 1212-8 surface-mount package (3.30 mm × 3.30 mm footprint, 1.07 mm max height), featuring an exposed drain pad on the bottom for thermal management and eight terminals arranged in a single-row configuration with three source pins, one gate pin, and four drain pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (S) | Source | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 4 (G) | Gate | Single gate input with 100 % Rg tested; low 0.5–2.2 Ω gate resistance supports stable, oscillation-free turn-on/turn-off. |
| 5–8 (D) | Drain | Four drain terminals connect to the large bottom-side exposed copper pad - primary thermal and current path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency synchronous rectification. |
| PowerPAK® 1212-8 package | Reduces board area by >40 % vs. TSSOP-8 while achieving 20× better thermal performance than TSSOP-8. |
| 100 % Rg tested | Guarantees gate resistance between 0.5–2.2 Ω, ensuring consistent switching speed and EMI behavior across production lots. |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU - suitable for green industrial and telecom equipment. |
| Low-profile 1.07 mm height | Enables integration into ultra-low-profile power modules (<2 mm total height) and handheld device PMUs. |
Applications
| High-Efficiency DC/DC Converters | Server VRMs |
|---|---|
Use Scenario: Primary-side switch in 12 V input, 0.8–3.3 V output synchronous buck converters operating at 300 kHz–1 MHz. IC Role / Device Role: High-side power switch handling up to 10 A continuous current with minimal conduction and switching losses. Use Value: RDS(on) = 0.0185 Ω at 10 V gate drive reduces I²R loss to 1.85 W at 10 A, enabling >95 % efficiency at full load. | Use Scenario: Core voltage regulation for Intel/AMD CPUs in rack-mounted servers requiring tight voltage tolerance and dynamic load response. IC Role / Device Role: Synchronous rectifier in multiphase buck stages where low Qg and fast tf/tr minimize dead-time losses. Use Value: Turn-off delay time td(off) = 32–50 ns and fall time tf = 14–25 ns support precise phase interleaving and reduce shoot-through risk. |
| Industrial Motor Drives | USB-C PD Power Stages |
Use Scenario: Half-bridge switch in 24 V BLDC motor gate drivers for factory automation and robotics control modules. IC Role / Device Role: Low-side switch with integrated body diode (VSD = 0.75–1.2 V) supporting freewheeling current during PWM off-time. Use Value: Body diode reverse recovery time trr = 30–60 ns limits voltage spikes and EMI during commutation, improving system EMC compliance. | Use Scenario: Secondary-side synchronous rectifier in 20 V/5 A USB-C Power Delivery adapters targeting compact form factors. IC Role / Device Role: Output rectifier replacing Schottky diodes to eliminate forward voltage drop and associated heat. Use Value: RDS(on) = 0.030 Ω at 4.5 V gate drive cuts conduction loss by >60 % vs. 0.4 V Schottky, enabling 50 % smaller heatsink or fanless design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | Higher VDS = 40 V; RDS(on) = 0.022 Ω @ 10 V; same PowerPAK 1212-8 package and pinout. | Better suited for 36 V input systems or automotive 24 V battery applications with higher surge margin. | Select when system requires >30 V blocking capability without changing layout or thermal design. |
| DMN3025LSD-13 | Same VDS = 30 V; RDS(on) = 0.025 Ω @ 10 V; SO-8 package with higher RthJA = 62 °C/W (steady state). | Larger footprint and inferior thermal performance limit usable current to ~6 A in same PCB area. | Choose only if legacy SO-8 compatibility is mandatory and thermal headroom exists. |
Compared with SI7804DN-T1-E3, Si7850DP-T1-GE3 offers higher voltage rating but slightly higher RDS(on), while DMN3025LSD-13 trades thermal efficiency and size for package familiarity - neither is pin-compatible, and both require layout revision.
Availability
SI7804DN-T1-E3 is available at Aetrix Electronics and suitable for high-density DC/DC converters, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable green sourcing.
Supply support for SI7804DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si78xx series targets high-frequency, high-current power switching applications, designed specifically for space-constrained and thermally demanding DC/DC conversion in computing, telecom, and industrial systems.
FAQ
What is the maximum continuous drain current rating for SI7804DN-T1-E3 at 70 °C ambient temperature?
The SI7804DN-T1-E3 supports 7.5 A continuous drain current at TA = 70 °C (steady-state condition), as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes proper PCB copper area per Vishay's recommended land pattern for PowerPAK 1212-8.
Does SI7804DN-T1-E3 have a built-in body diode, and what is its forward voltage?
Yes, SI7804DN-T1-E3 includes an intrinsic body diode with forward voltage VSD = 0.75–1.2 V at IS = 2.9 A and VGS = 0 V. This diode enables freewheeling operation in half-bridge and synchronous rectifier configurations, and its low VSD reduces conduction loss compared to external Schottky diodes in low-voltage output stages.
Is SI7804DN-T1-E3 compatible with lead-free reflow soldering processes?
Yes, SI7804DN-T1-E3 is qualified for lead-free reflow soldering with a peak temperature of 240 °C (±0 °C tolerance, +5 °C max), per Vishay document 73257. The PowerPAK 1212-8 package withstands the JEDEC J-STD-020 moisture sensitivity level (MSL) 1 profile, and no pre-bake is required prior to assembly.
What is the gate threshold voltage range for SI7804DN-T1-E3, and how does it affect drive requirements?
The gate threshold voltage VGS(th) for SI7804DN-T1-E3 is 0.8–1.8 V (measured at VDS = VGS, ID = 250 µA). This low and tightly distributed threshold enables reliable turn-on using standard 3.3 V or 5 V logic-level drivers without gate boosting, while maintaining sufficient noise margin against false triggering in noisy industrial environments.
Can SI7804DN-T1-E3 be used in avalanche-rated applications?
Yes, SI7804DN-T1-E3 is rated for single-pulse avalanche energy EAS = 11 mJ and avalanche current IAS = 15 A (L = 0.1 mH). These ratings apply under controlled test conditions and support limited unclamped inductive switching events - however, sustained avalanche operation is not recommended, and proper snubbing or clamping should be implemented in high-energy inductive loads.
SI7804DN-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7804DN-T1-E3 FAQ
1.How can I place an order for SI7804DN-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7804DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7804DN-T1-E3 reliable?
The price and inventory of SI7804DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7804DN-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7804DN-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7804DN-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7804DN-T1-E3?
SI7804DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7804DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7804DN-T1-E3?
For technical support, including SI7804DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7804DN-T1-E3 requirements.
6.How does Aetrix verify that SI7804DN-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7804DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7804DN-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7804DN-T1-E3?
All SI7804DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7804DN-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7804DN-T1-E3 part is unused and in its original packaging.
Return procedure for SI7804DN-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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