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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7806ADN-T1-E3

Name: SI7806ADN-T1-E3
Brand: Vishay Siliconix
SKU: SI7806ADN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7806ADN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7806ADN-T1-E3.pdf

Description:: MOSFET N-CH 30V 9A PPAK1212-8

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Product details

Overview

SI7806ADN-T1-E3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 0.011 Ω at V_GS = 10 V and 14 A continuous drain current, optimized for PWM-driven synchronous buck converters and secondary-side rectification.

For engineers reviewing the SI7806ADN-T1-E3 datasheet, SI7806ADN-T1-E3 pinout, SI7806ADN-T1-E3 application, or SI7806ADN-T1-E3 equivalent, key selection criteria include its 2.0 °C/W junction-to-case thermal resistance, 100 % R_g tested gate resistance, halogen-free Pb-free construction, and low 1.07 mm profile for space-constrained DC/DC power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics, with total gate charge of 13.2–20 nC and gate-drain charge of 4.3 nC under V_DS = 15 V, I_D = 14 A conditions - enabling high-efficiency operation in high-frequency synchronous rectifiers.

Its integrated body diode exhibits V_SD = 0.8–1.1 V at I_S = 3.2 A and zero gate voltage, supporting bidirectional conduction in flyback and LLC topologies, while the exposed drain pad provides direct thermal path to PCB copper for junction-to-ambient thermal resistance as low as 28 °C/W (10 s pulse).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with 20 % margin for transient spikes in industrial and telecom DC/DC systems
R_DS(on)	0.011 Ω @ V_GS = 10 V - enables <150 mW conduction loss at 12 A, critical for high-current synchronous rectifier efficiency
I_D (continuous)	14 A @ T_J = 150 °C - sustains full-load current in compact 12 V → 1 V/20 A point-of-load converters without derating
Q_g	13.2–20 nC - determines gate drive power and switching speed; compatible with standard 1-A peak gate drivers at ≤1 MHz
R_thJC	2.0–2.4 °C/W - allows >2 W steady-state dissipation with <5 °C rise above PCB temperature when mounted on ≥0.3 in² copper
V_GS(th)	1.0–3.0 V - ensures reliable turn-on with 3.3 V or 5 V logic-level gate drive, eliminating need for level shifters
Package	PowerPAK® 1212-8 - 3.3 × 3.3 mm footprint, 1.07 mm height, leadless design with exposed drain pad for thermal and electrical performance

Pinout & Package

SI7806ADN-T1-E3 uses the PowerPAK® 1212-8 surface-mount package: 3.30 mm × 3.30 mm body, 1.07 mm max height, with exposed drain pad on bottom side and eight terminals arranged in dual-row configuration. The package is leadless; solder fillet at exposed copper tip is not required for reliable interconnection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	Seven parallel drain terminals connected to large exposed bottom pad - provides low-inductance, high-current path and primary thermal conduction path to PCB
4	Gate (G)	Single gate input - requires <20 nC total charge for full enhancement; gate resistance 0.9–2.7 Ω limits ringing and EMI during switching
-	Source (S)	Not externally accessible; source connection internal to die - device operates as common-source switch with drain output and gate control

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.011 Ω R_DS(on) in 3.3 × 3.3 mm footprint - reduces conduction loss by >30 % vs. comparable SO-8 MOSFETs
PWM-optimized switching	Q_gd/Q_gs ratio of ~0.81 - suppresses Miller-induced shoot-through in synchronous buck high-side operation
100 % R_g tested	Guarantees gate resistance between 0.9–2.7 Ω - eliminates variability in gate drive timing and dV/dt immunity across production lots
Low thermal resistance	R_thJC = 2.0 °C/W - enables >2× higher power density than TSSOP-8 equivalents without forced airflow or heatsinks
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS - suitable for automotive and industrial applications requiring strict material compliance

Applications

Server VRM Output Stage	Industrial PLC Power Supply
Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion delivering up to 120 A per phase in multi-phase server voltage regulator modules. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 500 kHz–1 MHz with precise dead-time control to minimize body diode conduction loss. Use Value: 0.011 Ω R_DS(on) cuts conduction loss by 450 mW per phase vs. 0.016 Ω alternatives, directly improving VRM efficiency and reducing thermal load on PCB copper.	Use Scenario: Compact 24 V input DC/DC converter powering I/O modules, communication interfaces, and analog signal conditioning in programmable logic controllers. IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology, driven by integrated controller with 3.3 V logic-compatible gate threshold. Use Value: 1.0–3.0 V V_GS(th) ensures robust turn-on with microcontroller GPIO or dedicated gate driver, eliminating external level-shifting circuitry and BOM cost.
Telecom Base Station PSU	Automotive ADAS Camera Module
Use Scenario: 48 V intermediate bus converter stepping down to 5 V/3.3 V for RF transceivers, FPGAs, and memory in 5G macro base stations. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated forward or active clamp forward topology, handling 10–15 A continuous output current. Use Value: Exposed drain pad and 2.0 °C/W R_thJC maintain junction temperature <95 °C at full load on 2-layer FR4, avoiding thermal throttling in sealed enclosures.	Use Scenario: Compact 12 V → 3.3 V point-of-load supply for image sensor, ISP, and MIPI interface in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: Low-side switch in high-frequency (≥1 MHz) buck converter, where small footprint and low EMI are critical for EMC compliance. Use Value: PowerPAK 1212-8's 3.3 × 3.3 mm size saves >40 % board area vs. TSSOP-8, enabling placement directly adjacent to sensor IC without compromising layout symmetry.

Server VRM Output Stage

Industrial PLC Power Supply

Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion delivering up to 120 A per phase in multi-phase server voltage regulator modules.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 500 kHz–1 MHz with precise dead-time control to minimize body diode conduction loss.

Use Value: 0.011 Ω R_DS(on) cuts conduction loss by 450 mW per phase vs. 0.016 Ω alternatives, directly improving VRM efficiency and reducing thermal load on PCB copper.

Use Scenario: Compact 24 V input DC/DC converter powering I/O modules, communication interfaces, and analog signal conditioning in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology, driven by integrated controller with 3.3 V logic-compatible gate threshold.

Use Value: 1.0–3.0 V V_GS(th) ensures robust turn-on with microcontroller GPIO or dedicated gate driver, eliminating external level-shifting circuitry and BOM cost.

Telecom Base Station PSU

Automotive ADAS Camera Module

Use Scenario: 48 V intermediate bus converter stepping down to 5 V/3.3 V for RF transceivers, FPGAs, and memory in 5G macro base stations.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated forward or active clamp forward topology, handling 10–15 A continuous output current.

Use Value: Exposed drain pad and 2.0 °C/W R_thJC maintain junction temperature <95 °C at full load on 2-layer FR4, avoiding thermal throttling in sealed enclosures.

Use Scenario: Compact 12 V → 3.3 V point-of-load supply for image sensor, ISP, and MIPI interface in rear-view or surround-view camera modules.

IC Role / Device Role / Timing Role: Low-side switch in high-frequency (≥1 MHz) buck converter, where small footprint and low EMI are critical for EMC compliance.

Use Value: PowerPAK 1212-8's 3.3 × 3.3 mm size saves >40 % board area vs. TSSOP-8, enabling placement directly adjacent to sensor IC without compromising layout symmetry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	30 V, R_DS(on) = 0.0055 Ω @ 10 V, 25 A ID, PowerPAK® 1212-8 - lower on-resistance but higher Q_g (32 nC)	Better for ultra-high-efficiency, lower-current applications (<10 A); less suitable for high-frequency PWM due to larger gate charge	Select Si7850DP-T1-GE3 only if conduction loss dominates system loss budget and gate drive capability supports 32 nC charge
IRF7759L2TRPBF	30 V, R_DS(on) = 0.012 Ω @ 10 V, 12 A ID, SO-8 - same voltage/current rating but 3× higher R_thJA (81 °C/W vs. 34 °C/W)	Acceptable for low-power or thermally relaxed designs; unsuitable for high-density layouts where thermal management is constrained	Choose IRF7759L2TRPBF only when legacy SO-8 footprint compatibility is mandatory and thermal headroom exceeds 40 °C

Compared with SI7806ADN-T1-E3, Si7850DP-T1-GE3 delivers lower conduction loss but demands higher gate drive energy, while IRF7759L2TRPBF maintains pin compatibility at the cost of significantly degraded thermal performance - making SI7806ADN-T1-E3 the optimal balance of efficiency, thermal capability, and layout flexibility for new 12–24 V DC/DC designs.

Availability

SI7806ADN-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, and telecom base station PSUs requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SI7806ADN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si78xx family is designed for high-frequency, high-efficiency DC/DC conversion in space-constrained applications - targeting synchronous rectification, load switching, and POL regulation in computing, industrial, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for SI7806ADN-T1-E3 at 70 °C ambient?

The SI7806ADN-T1-E3 supports 11 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with derating applied. This value assumes proper PCB copper area (≥0.3 in² drain pad) and natural convection cooling. At higher ambient temperatures or reduced copper, further derating is required to maintain T_J ≤ 150 °C.

Does SI7806ADN-T1-E3 require a gate resistor for stable operation in a 500 kHz synchronous buck converter?

Yes - although SI7806ADN-T1-E3 has an internal gate resistance of 0.9–2.7 Ω, a discrete 5–10 Ω series gate resistor is recommended in 500 kHz applications to dampen ringing, limit peak gate current, and reduce EMI. The datasheet's dynamic test condition (R_g = 6 Ω) confirms this practice improves switching waveform integrity without compromising turn-on/off times excessively.

Can SI7806ADN-T1-E3 be used as a high-side switch with 5 V gate drive?

Yes - SI7806ADN-T1-E3 has a gate threshold voltage range of 1.0–3.0 V, ensuring full enhancement with 5 V gate drive. Its R_DS(on) of 0.011 Ω at V_GS = 10 V and 0.016 Ω at V_GS = 4.5 V confirms strong channel formation at 5 V, making it suitable for high-side configurations in buck regulators where bootstrap or charge-pump gate drive is employed.

What is the safe operating area (SOA) limitation for SI7806ADN-T1-E3 at DC operation?

At DC, the SI7806ADN-T1-E3 SOA is limited by R_DS(on) and thermal resistance: maximum sustainable power is 1.5 W at T_A = 70 °C (per Absolute Maximum Ratings), corresponding to ~12 A at 0.011 Ω. The SOA curve shows DC operation bounded by the R_DS(on) line - meaning voltage must be reduced proportionally as current increases to avoid exceeding P_D = 1.5 W and T_J = 150 °C.

Is SI7806ADN-T1-E3 qualified for reflow soldering with lead-free solder paste?

Yes - SI7806ADN-T1-E3 is rated for lead-free reflow with a peak temperature of 240 °C (±0 °C tolerance) for 20–40 seconds, per Vishay document 73257. The PowerPAK® 1212-8 package meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), requiring no baking prior to assembly, and supports standard ramp-up/down rates of ≤6 °C/s.

SI7806ADN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7806ADN-T1-E3 FAQ

1.How can I place an order for SI7806ADN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7806ADN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7806ADN-T1-E3 reliable?

The price and inventory of SI7806ADN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7806ADN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7806ADN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7806ADN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7806ADN-T1-E3?

SI7806ADN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7806ADN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7806ADN-T1-E3?

For technical support, including SI7806ADN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7806ADN-T1-E3 requirements.

6.How does Aetrix verify that SI7806ADN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7806ADN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7806ADN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7806ADN-T1-E3?

All SI7806ADN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7806ADN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7806ADN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7806ADN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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