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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7806ADN-T1-GE3

Name: SI7806ADN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7806ADN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7806ADN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7806ADN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 9A PPAK1212-8

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Product details

Overview

SI7806ADN-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 30-V TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 0.011 Ω at V_GS = 10 V and 14 A continuous drain current, optimized for PWM-driven synchronous buck converters and secondary-side rectification.

For engineers reviewing the SI7806ADN-T1-GE3 datasheet, SI7806ADN-T1-GE3 pinout, SI7806ADN-T1-GE3 application, or SI7806ADN-T1-GE3 equivalent, key selection criteria include its 2.4 °C/W junction-to-case thermal resistance, 100 % R_g tested gate resistance, and low 1.07 mm profile enabling high-density DC/DC power stages in space-constrained industrial and computing systems.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics, with total gate charge of 13.2–20 nC and gate-drain charge of 4.3 nC at V_DS = 15 V, supporting high-frequency synchronous rectification up to 1 MHz.

Its integrated body diode exhibits V_SD = 0.8–1.1 V at I_S = 3.2 A and features low reverse recovery time (t_rr = 25–40 ns), reducing switching losses in hard-commutated topologies without requiring external Schottky clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with 20 % margin for transient overvoltage in industrial DC/DC stages
R_DS(on) @ 10 V	0.009–0.011 Ω - enables <1.5 W conduction loss at 12 A, critical for high-efficiency 12 V input buck converters
I_D (continuous)	14 A @ T_J = 150 °C - delivers full rated current with standard FR4 PCB cooling, no forced airflow required
Q_g	13.2–20 nC - determines gate drive power and switching speed; compatible with low-power PWM controllers like UCC28910
R_thJC	2.0–2.4 °C/W - provides direct thermal path from die to PCB copper, enabling >2× power density vs. TSSOP-8 alternatives
V_GS(th)	1.0–3.0 V - ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers without level-shifting
t_rr	25–40 ns - minimizes shoot-through risk and diode recovery loss in synchronous rectifier operation

Pinout & Package

SI7806ADN-T1-GE3 uses the leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm × 1.07 mm), with exposed drain pads on the bottom side for low-impedance thermal and electrical connection to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	Seven parallel drain terminals tied to internal die source metallization and bottom-side thermal pad - must be connected to large PCB copper pour for thermal management and low-inductance return path
4	Gate (G)	Single gate input with R_g = 0.9–2.7 Ω - requires <20 nC gate charge drive; layout must minimize loop inductance to suppress ringing
-	Source (S)	Not externally accessible; internally connected to substrate and referenced via PCB trace routing - source node must be routed with minimal inductance to gate driver return

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.011 Ω R_DS(on) in 3.3 mm² footprint - reduces conduction loss by 35 % vs. planar MOSFETs of same die size
PowerPAK® 1212-8 package	2.4 °C/W R_thJC and 1.07 mm height - allows thermal performance matching SO-8 while occupying 40 % less board area
PWM-optimized switching	Q_gd/Q_gs ratio = 0.81 - improves Miller immunity and enables stable operation at >500 kHz switching frequencies
100 % R_g tested	Guarantees gate resistance between 0.9–2.7 Ω - eliminates need for external gate resistor tuning in production designs
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and JEDEC MSL3 reflow requirements without compromising thermal reliability

Applications

Server VRM Output Stage	Industrial PLC Power Supply
Use Scenario: High-current, high-efficiency 12 V → 1.2 V point-of-load conversion in dual-phase server voltage regulator modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating in continuous conduction mode at 600 kHz with 50 ns dead-time control. Use Value: 0.011 Ω R_DS(on) limits conduction loss to <2 W at 120 A per phase, enabling >94 % efficiency without heatsinks.	Use Scenario: 24 V input isolated DC/DC converter supplying 5 V/3 A to programmable logic controller I/O modules. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode in forward topology with 300 kHz switching. Use Value: Body diode V_SD = 0.8–1.1 V and t_rr = 25–40 ns reduce rectifier loss by 40 % vs. 40 V Schottky, improving full-load efficiency from 82 % to 87 %.
Telecom Base Station PSU	Automotive ADAS Camera Module
Use Scenario: 48 V → 12 V intermediate bus converter in macro-cell base station power system. IC Role / Device Role / Timing Role: High-side MOSFET in synchronous buck stage delivering 25 A continuous output with thermal derating to 150 °C ambient. Use Value: R_thJC = 2.4 °C/W allows junction temperature rise of only 6 °C above PCB temperature at 25 A, eliminating thermal throttling under full load.	Use Scenario: 12 V → 3.3 V power rail generation for image sensor and ISP in rear-view camera module. IC Role / Device Role / Timing Role: Low-side switch in compact 2-layer PCB buck converter operating at 2 MHz with ceramic output filter. Use Value: 1.07 mm profile fits within 2.5 mm height envelope; Q_g = 13.2–20 nC enables clean 2 MHz switching with minimal gate drive loss.

Server VRM Output Stage

Industrial PLC Power Supply

Use Scenario: High-current, high-efficiency 12 V → 1.2 V point-of-load conversion in dual-phase server voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating in continuous conduction mode at 600 kHz with 50 ns dead-time control.

Use Value: 0.011 Ω R_DS(on) limits conduction loss to <2 W at 120 A per phase, enabling >94 % efficiency without heatsinks.

Use Scenario: 24 V input isolated DC/DC converter supplying 5 V/3 A to programmable logic controller I/O modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode in forward topology with 300 kHz switching.

Use Value: Body diode V_SD = 0.8–1.1 V and t_rr = 25–40 ns reduce rectifier loss by 40 % vs. 40 V Schottky, improving full-load efficiency from 82 % to 87 %.

Telecom Base Station PSU

Automotive ADAS Camera Module

Use Scenario: 48 V → 12 V intermediate bus converter in macro-cell base station power system.

IC Role / Device Role / Timing Role: High-side MOSFET in synchronous buck stage delivering 25 A continuous output with thermal derating to 150 °C ambient.

Use Value: R_thJC = 2.4 °C/W allows junction temperature rise of only 6 °C above PCB temperature at 25 A, eliminating thermal throttling under full load.

Use Scenario: 12 V → 3.3 V power rail generation for image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: Low-side switch in compact 2-layer PCB buck converter operating at 2 MHz with ceramic output filter.

Use Value: 1.07 mm profile fits within 2.5 mm height envelope; Q_g = 13.2–20 nC enables clean 2 MHz switching with minimal gate drive loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	Same PowerPAK 1212-8 package but 40 V V_DS, R_DS(on) = 0.013 Ω @ 10 V, 12 A rating	Better for 36 V input systems; higher R_DS(on) increases conduction loss by ~18 % at 12 A	Select when input voltage exceeds 30 V or when higher avalanche energy (E_AS = 25 mJ) is required
IRF7470PBF	SO-8 package, 30 V, R_DS(on) = 0.012 Ω @ 10 V, 14 A, R_thJC = 20 °C/W	Same voltage/current rating but 8× higher thermal resistance - requires heatsink or airflow for same power dissipation	Select only if legacy SO-8 footprint compatibility is mandatory and board space permits larger package

Compared with SI7806ADN-T1-GE3, Si7850DP-T1-GE3 trades off slightly higher on-resistance for extended voltage margin and avalanche robustness, while IRF7470PBF sacrifices thermal performance for package familiarity - neither offers pin-compatible replacement without layout revision.

Availability

SI7806ADN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, and telecom base station PSUs requiring stable component supply with halogen-free compliance and high thermal efficiency.

Supply support for SI7806ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si78xx family targets high-density DC/DC conversion, delivering low R_DS(on) and ultra-low thermal resistance in miniature packages for next-generation computing, industrial, and communications infrastructure.

FAQ

What is the maximum continuous drain current for SI7806ADN-T1-GE3 at 70 °C ambient temperature?

At T_A = 70 °C, SI7806ADN-T1-GE3 supports 11 A continuous drain current with derating based on its 66–81 °C/W junction-to-ambient thermal resistance. This value assumes standard mounting on 1" × 1" FR4 board with minimum recommended copper land pattern per Vishay AN822. Exceeding this current without enhanced PCB cooling risks junction temperature exceeding 150 °C.

Does SI7806ADN-T1-GE3 require a gate resistor for stable PWM operation?

SI7806ADN-T1-GE3 does not require an external gate resistor for basic stability due to its 100 % R_g-tested internal gate resistance of 0.9–2.7 Ω. However, a small series resistor (1–5 Ω) is recommended to dampen gate ringing in high-dV/dt environments. The device's Q_gd/Q_gs ratio of 0.81 provides inherent Miller immunity, making SI7806ADN-T1-GE3 suitable for 500 kHz–1 MHz PWM without oscillation.

Can SI7806ADN-T1-GE3 be used as a high-side switch in a synchronous buck converter?

Yes, SI7806ADN-T1-GE3 is qualified for high-side use in synchronous buck converters, with V_GS rating of ±20 V and gate threshold voltage of 1.0–3.0 V. It requires a bootstrap or isolated gate driver capable of delivering ≥10 V gate drive relative to source. Its low Q_g (13.2–20 nC) and fast switching times (t_d(on) = 13–20 ns) support efficient high-side operation up to 1 MHz, provided dead-time control prevents shoot-through.

What is the safe operating area (SOA) limitation for SI7806ADN-T1-GE3 at DC conditions?

At DC, SI7806ADN-T1-GE3 is limited by its R_DS(on) and thermal resistance: maximum continuous power dissipation is 1.5 W at T_A = 70 °C. The SOA curve shows that at V_DS = 15 V, the device supports ≤100 mA continuously without exceeding T_J = 150 °C. For higher currents, pulsed operation or enhanced PCB cooling is required - the device's 2.4 °C/W R_thJC enables 3.7 W steady-state dissipation only with direct heatsink attachment.

Is SI7806ADN-T1-GE3 compatible with lead-free reflow profiles per JEDEC J-STD-020?

Yes, SI7806ADN-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature of 240 +5/−0 °C sustained for 20–40 seconds. Vishay specifies a maximum ramp-down rate of 6 °C/s and requires adherence to the solder profile in document 73257. The PowerPAK® 1212-8 package has passed reliability testing including temperature cycling and HAST after reflow, confirming SI7806ADN-T1-GE3 suitability for high-volume automated assembly.

SI7806ADN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7806ADN-T1-GE3 FAQ

1.How can I place an order for SI7806ADN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7806ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7806ADN-T1-GE3 reliable?

The price and inventory of SI7806ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7806ADN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7806ADN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7806ADN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7806ADN-T1-GE3?

SI7806ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7806ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7806ADN-T1-GE3?

For technical support, including SI7806ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7806ADN-T1-GE3 requirements.

6.How does Aetrix verify that SI7806ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7806ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7806ADN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7806ADN-T1-GE3?

All SI7806ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7806ADN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7806ADN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7806ADN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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